LDB 107 Search Results

ZF112

Abstract: ZF38 valor ST7032 N117 smd n43 d type 50 pin connector HYUNDAI i10 prxd2 ic 74ls245 pdf datasheet ZF78
Contextual Info: LED_ACT.1 ACT[7:0] ACT[7:0] LED_BLK.1 LDGA LDGA LDGB LDGB AUI_BLK.1 LDA[4:0],LDB[4:0] LDA[4:0],LDB[4:0] DO+ CNTRL.1 DO- LED_BLKP.1 ACT[7:0] DO+ DO+ DO- DO- CI+ LDGA CI- LDGB PLDA[4:0],PLDB[4:0] CI+ PLDA[4:0],PLDB[4:0] LDA[4:0],LDB[4:0] CI- ISA_HUB.1 DI+ CI+

OV 5693

Contextual Info: Revised Mar. 1998 JS9P09-AS 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT PldB 23.0 24.0 — dBm

TA 7358 TOSHIBA

Abstract: T 9722
Contextual Info: Revised Mar. 1998 JS9P08-AS 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 23.0 24.0 — dBm

Contextual Info: Revised Mar. 1998 JS9P08-AS 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 23.0 24.0 — dBm

Contextual Info: TOSHIBA Oct. 1997 TPM 1919-40-311 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS CONDITION SYMBOL Output Power at ld B MAX. UNIT MIN. TYP. 46.0 47.0 — dBm Compression Point PldB Power Gain at ldB Compression Point G ldB 12.0 13.0 — dB I ds

947-75

Contextual Info: Oct. 1997 JS9P08-AS Draft 1 RF PERFORMANCE. SPECIFICATIONS CHARACTERISTICS O utput Powder at ldB Com pression Point Pow er Gain, at ldB Compression Point D rain C urrent Pow er Added Efficiency ( Ta= 2K°C 1 SYMBOL CONDITION MIN. TYP. M AX U N IT PldB 21.5 23.0 — dBm

LDR05

Abstract: LDR07 LDR09 LDR-09 j9 smd LCS-1-04A LMP05 smt LDR aa 472m 13mm ldr 12
Contextual Info: 台灣伏特電子股份有限公司 TAIWAN VOLT ELECTRONIC CO.,LTD Type J:SMD CHOKES CONTENTS PAGE = LDB TYPE - 1~8 LBT TYPE - 9~12 LDR TYPE -

Contextual Info: Revised Mar. 1998 JS9P10-AS 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS Output Power atldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 23.0 24.0 — dBm

Contextual Info: Revised Mar. 1998 JS9P10-AS 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS Output Power atldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 23.0 24.0 — dBm

Contextual Info: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T P M 1 9 1 9 -6 0 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Partially Matched Type PldB=48.0dBm at 1.96GHz ■ Hermetically Sealed Package High Power Gain GldB=13dB at 1.96GHz CHARACTERISTICS Output Power at ldB

Contextual Info: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T P M 1 9 1 9 -6 0 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Partially Matched Type PldB=48.0dBm at 1.96GHz ■ Hermetically Sealed Package High Power Gain G ldB=13dB at 1.96GHz CHARACTERISTICS SYMBOL

cq 531

Abstract: cq 529 tpm1919 TPM1919-60
Contextual Info: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T P M 1 9 1 9 -6 0 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Partially Matched Type PldB=48.0dBm at 1.96GHz ■ Hermetically Sealed Package High Power Gain GldB=13dB at 1.96GHz CHARACTERISTICS Output Power at ldB

Contextual Info: TOSHIBA Oct. 1997 TPM 1919-40-311 1. R F PERFORM ANCE SPEC IFIC A TIO N S CHARACTERISTICS SYMBOL CONDITION Output Power at ld B Compression Point PldB Power Gain at ldB Compression Point GldB Drain Current Power Added Efficiency V ds= 10V f = 1.9 GHz I ds

HN3C06F

Abstract: HN3C06
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE HN3C06F Unit in mn VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. + 0.2 2.8-0.3 . Including Two Devices in SM6 Super Mini Type with + 0.2 1.6 6 Leads . Low Noise Figure, High Gain. - 0.1 ÌD 3 6 . NF=1.ldB, | S21e |2=12dB (f=lGHz)

Contextual Info: 1 Who HEWLETT mLriM P a c k a r d 2 - 8 GHz Medium Power Gallium Arsenide FE T Technical Data A TF-45101 Features • High Output Power: 29.0 dBm Typical Pi ¿ 3 at 4 GHz • High Gain a t ldB Compression: 10.0 dB Typical Gj ¿ 3 at 4 GHz • High Power Efficiency:

Contextual Info: mHHMPACKARD W tia i H E W L E T T 0 .5 - 6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features • Low Noise Figure: 0.9 dB Typical at 4 GHz • High A ssociated Gain: 13.0 dB Typical at 4 GHz • High Output Power: 23.0 dBm Typical P LdB at 4 GHz

Ablebond 74-1

Abstract: 12L3 Z0 607 MN 53231 Ablebond 36-2
Contextual Info: What H EW LETT f t "KM P A C K A R D 6 -2 0 GHz Amplifier Technical Data HMMC-5618 Features • High Efficiency: 11% @ P.ldB Typical • Output Power, P ldB: 18 dBm Typical • High Gain: 14 dB Typical • F lat Gain Response: ±0.5 dB Typical • Low Input/Output VSWR:

Contextual Info: Thal H E W L E T T mL'KM P A C K A R D 2 - 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45171 F eatures • High Output Power: 29.0 dBm Typical Pt dB at 4 GHz • High Gain a t ldB Compression: 10.5 dB Typical Gj dB at 4 GHz • High Pow er Efficiency:

201 429 HP

Abstract: ATF-21186 ATF-21186-STR ATF-21186-TR1 0840 057 GLDB0 ga 1112
Contextual Info: TAff% HEW LETT mLftM P A C K A R D 0 .5 - 6 GHz G eneral P urpose G allium A rsenide FET Technical Data ATF-21186 Features Description • Low N o ise Figure: 0.5 dB Typ. @ 2 GHz • H igh O utpu t Pow er: 19 dBm Typ. P ldB @ 2 GHz • H igh MSG: 13.5 dB Typ. @ 2 GHz

LC75383E

Contextual Info: i s # 3 — KNo. N 5002A '*• / NO. 5002A 00296 SKHftB002 i ? L i ’i t B < l ï ? 1'1. LC75383E- LC7538äE i, X- CMOS LSI I r y j ^ 2j — -ffl'.Xtltyfex. Xt¡ U-sA- 3 > h o 3 > h D ~ iK - é í ') í> A fí)J , OdB~ -79d B (ldB X r -y7),_coff)81=K Vs U3

F10G

Contextual Info: S EM IC O N D U C T O R KTC3770UL TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR V H F /U H F W ID E B A N D AMPLIF IE R A PPLICATIO N. FEATURES • Low Noise Figure, High Gain. • N F = l.ld B , |S2le|2= l ldB f=lG H z . M A X IM U M R AT IN G (Ta=25°C)

Y152

Abstract: 6663p LC75396E D350 y-152
Contextual Info: FNo. N 5747 1 GGE LC75396E LC75396E». X U V A, A 7 > * , »f tf y 9 à • -f n-ÿ-f •*•' CMOS LSI > h V 3 7 -f ^ %'> l> 7 ^ : OdB— 79dB ldB ^ -r y ~ f , a >. L c h - 7 P > h /y 7 , B c h .7 n > W V T 4r^ 4 » Ä L /T : £/■?> K Ä 2 d B 7 .^ 'y ^± 1 0 d B © 3 > b D - ^ T ' t $

74AC165

Abstract: iF80H-1FBFH 80C196NP IF80H 8XC196MH SF 119 D AD7893 p210w0 LD 7576 OS 8067H
Contextual Info: Using the SIO on the 8xC196MH Application Brief AB-71 December 2000 Order Number: 272594-002 Using the SIO on the 8xC196MH Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

bbc 598 479

Abstract: 918010 transistor d717 d717* transistor d717 transistor 80196 instruction set BBS 2202 DF08 928 01e3 bbc 598
Contextual Info: 80C196 MACRO ASSEMBLER UT131 01-Feb-2000 12:18:09 PAGE 80C196 macro assembler v6.0 r3 1 SN00085643-195 c 1998 TASKING, Inc. SOURCE FILE: dac_rism.a96 OBJECT FILE: dac_rism.obj CONTROLS SPECIFIED IN INVOCATION COMMAND: errorprint debug linedebug source cmain copyattr pagelength(45) pagewidth(120)