LDC 3900 Search Results

C175

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. LDC-M6002RD ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X PARAMETER MIN TYP PEAK WAVELENGTH 565 FORWARD VOLTAGE 3900 EMI 11ED COLOR: 5.80 110.228] FACE COLOR: BLACK SEGMENT COLOR: MILKY WHITE DIFFUSED 2 .5 4 [0.100] 13 PL S.

Contextual Info: UNCONTROLLED DOCUMENT 0> REV, A PART NUMBER REV. LDC —M5002G A E.C.N. NUMBER AND REVISION COMMENTS DATE 4.23.07 E.C.N, # 1 1 1 4 9. 60,00±0,50 [2,362^0,020] — 51,75 [2.037] REF. - ELECTRO—OPTICAL CHARACTERISTICS Ta = 25‘C 3.90 [0,154: PARAMETER

heidenhain rod 456

Abstract: 2090-UXPC-D09xx Heidenhain ROD 456 - 2500 pin rod 323 heidenhain HEIDENHAIN rod 529 HEIDENHAIN ROD 630 HEIDENHAIN ROD 420 ultra5000 interface cable 2090-uxpc-D09xx VARISTOR 10sp HEIDENHAIN rod 430
Contextual Info: Selection Guide Kinetix Motion Control Rotary Motion Servo Drives MP-Series 2092 2097 TL-Series 2093 2098 HPK-Series 2094 2099 RDD-Series Motion Accessories Linear Motion 2090 MP-Series 1394 TL-Series LDC-Series LDL-Series Logix Motion Modules 1756 1768 Important User Information

Contextual Info: PART NUMBER REV. LDC-N5612N A UNCONTROLLED DOCUMENT REV. PIN 12 r PIN 7 19.00 [0.748] A 4 . 5 0 ± 0 .7 5 E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11146. 5.10.07 [0,177±0,03Q] REPLACE PART -/LDQ—N522RI 1 5 .2 4 [0 .6 0 0 ] ELECTRO-OPTICAL CHARACTERISTICS TA - 2 5 ' C

Contextual Info: UNCONTROLLED DOCUMENT REV, A 6 0 .0 0 1 0 .5 0 5 1 .7 5 PART NUMBER REV. LDC — M5004R A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11149. [2 .3 6 2 ± 0 .0 2 0 : [2 .0 3 7 ] REF. 3 .9 0 ELECTRO—OPTICAL CHARACTERISTICS Ta =2S'C [0 .1 5 4 ] — I PARAMETER

Contextual Info: DATE REVI5IDN5 REV or. 19,00 CO,7 4 8 ] 4 ,50±0.75 [û ,1 7 7 ± û ,0 3 0 : 15.24 CO.600] l DIGIT DETAIL DIG 1 12 11 7 4 2 9 1 10 5 DIG 2 DIG 3 DIG 4 8 6 3 UNLE55 OTHERWISE 5PECIFIED TOLERANCE IS ± .Z 5 m m ± 0 ,0 1 0 ” □RAWING NUMBER REV LDC-N5612NI

t160 crystal 16 mhz

Abstract: t3600
Contextual Info: Miniature V S I A N D A N c L I G TOROIDAL INDUCTORS 81728, semi-bright. Housing material is Vectra , a liquid crystal polymer plastic meeting the requirements of MlL-M-24519C. Vectra® can be used continuously at 254”C 489"F , has a melt point of 280°C

PK0810-472K-S

Abstract: TC-221M-1A-5026 TC-471M-1A-6026 TC-900M-5A-9026 TC-501M-3A-9426 VC1019-333K-UL TC-430M-1A-4426 TC-290M-4A-6026 enamelled copper wire tables TC-101M-5A-8026
Contextual Info: 89 RF Peaking Coils - PK 0608 - PK 0810 - PK1012 Series • • • • • Excellent Q, high SFR Radial mounting Small size PVC sleeving or UL tube Operating temperature range : - 20 °C to + 80 °C Specifications • Inductance range : 1.0 to 100 mH • Current rating :

Contextual Info: UNCAPPED POT-CORE INDUCTORS j # Fully encapsulated thru-hole lead design # High inductance values # Excellent shielding # Low-loss un-gapped ferrite cores design notes Pot-core inductors described in this brochure are manufactured of the highest quality raw materials utilizing low-loss ferrite core mate­

HMT-22

Abstract: HMT-2200
Contextual Info: 9 V C ir v ic t i^ u r e J L o iu s S i C f v o u & t t e INDUCTORS # Fully encapsulated design # High Q # Low external magnetic field # Stable powdered iron cores # High self-resonant frequency design notes Toroidal inductors described in this brochure are manufactured of

PCI120

Abstract: PCI-100 PCI-5600 upc 30c UPCI-560
Contextual Info: TYPICAL “ Q” VS FREQUENCY 1KMI 3KHz 10KHZ 3CKHz lOCKHz 30C«Hi I MHz FREQUENCY TEST FREQUENCY TABLE L IN mH RANGE L AND Q TEST FREQUENCY 27 to 200 2.5 KHz (1mA) 200 to 3,600 .79 KHz (5mA) 3,600 to 12,000 250 Hz (10mA) A = OUTSIDE DIAMETER C = CORE DIAMETER

Z86C1200ZEM

Abstract: Z86C21 Z86E21
Contextual Info: Z86E21 Z86E21 CMOS Z8 OTP MICROCONTROLLER GENERAL DESCRIPTION The Z86E21 microcontroller MCU introduces the next level of sophistication to single-chip architecture. The Z86E21 is a member of the Z8 single-chip microcontroller family with 8 Kbytes of EPROM and 236 bytes of general

catv laser predistortion circuit

Abstract: thermoelectric generator by using peltier a2300 80-CHANNEL agere photodiode T3641 9349 line transformer A1611 9383-xxx DFB CATV
Contextual Info: Application Note September 2000 Transitioning from the A2300 DFB to the A1611A/B DFB Laser Module Optical Isolation Reflections caused by a phenomenon such as Rayleigh scattering in long fiber-optic links is minimized with built-in optical isolation. Reflected light entering

lucent DFB laser application

Abstract: a2300 opto isolator a2300 Lucent Laser 2000 catv laser predistortion circuit 9383-xxx lucent DFB laser A2300 catv transmitter predistortion circuit TEC control circuit TEC lightwave thermoelectric generator by using peltier
Contextual Info: Application Note September 2000 Transitioning from the A2300 DFB to the A1611A/B DFB Laser Module Optical Isolation Reflections caused by a phenomenon such as Rayleigh scattering in long fiber-optic links is minimized with built-in optical isolation. Reflected light entering

MTP75N05HD equivalent

Abstract: MTP75N05HD AN569
Contextual Info: MTP75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy–efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

mtp75n05hd

Abstract: mosfet transistor 400 volts.100 amperes
Contextual Info: MTP75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy−efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

HD6432127RPS

Abstract: HD64F2128PS20 tcl 2127 ac din hfe nv service manuals Hitachi DSA00167 CHN 711
Contextual Info: Hitachi Single-Chip Microcomputer H8S/2128 Series H8S/2124 Series H8S/2128 F-ZTAT H8S/2128 H8S/2127 H8S/2126 H8S/2124 H8S/2123 H8S/2122 H8S/2120 HD6432128W, HD6432128, HD64F2128, HD64F2128V HD6432127RW, HD6432127R HD6432126RW, HD6432126R HD6432124 HD6432123

HD64F2128FA20

Abstract: tcl 2127 ac din hfe nv fa12 mark TF80 HD64F2128 Hitachi DSA00505
Contextual Info: Hitachi Single-Chip Microcomputer H8S/2128 Series H8S/2124 Series H8S/2128 F-ZTAT H8S/2128 HD6432128W, HD6432128, HD64F2128, HD64F2128V H8S/2127 HD6432127RW, HD6432127R H8S/2126 HD6432126RW, HD6432126R H8S/2124 HD6432124 H8S/2123 HD6432123 H8S/2122 HD6432122

AN569

Abstract: MTB75N05HD MTB75N05HDT4 mosfet transistor 400 volts.100 amperes
Contextual Info: MTB75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

948F

Abstract: CD4020B MC14020B MC14020BCP MC14020BD MC14020BDR2 MC14020BDT 14020b
Contextual Info: MC14020B 14-Bit Binary Counter The MC14020B 14–stage binary counter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 14 stages of ripple–carry binary counter. The device

MC14020BCP

Abstract: MC14020B 948F CD4020B MC14020BD MC14020BDR2 MC14020BDT
Contextual Info: MC14020B 14-Bit Binary Counter The MC14020B 14–stage binary counter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 14 stages of ripple–carry binary counter. The device

transistor C 548 B Philips

Abstract: Hitachi DSAUTAZ006 transistor bf 244
Contextual Info: Hitachi Single-Chip Microcomputer H8S/2128 Series H8S/2124 Series H8S/2128 F-ZTAT H8S/2128 H8S/2127 H8S/2126 H8S/2124 H8S/2123 H8S/2122 H8S/2120 HD6432128W, HD6432128, HD64F2128, HD64F2128V HD6432127RW, HD6432127R HD6432126RW, HD6432126R HD6432124 HD6432123

chn 752

Abstract: chn 622 CHN 623 Diodes CHN 804 diode chn 808 HD64F2128FA20 HD6432122 ac din hfe nv CHN 843 Hitachi DSA00505
Contextual Info: Hitachi Single-Chip Microcomputer H8S/2128 Series H8S/2127 HD6432127RW, HD6432127R H8S/2126 HD6432126RW, HD6432126R H8S/2124 Series H8S/2122 HD6432122 H8S/2120 HD6432120 H8S/2128 F-ZTAT HD64F2128 Hardware Manual ADE-602-114B Rev. 3.0 03/26/01 Hitachi, Ltd.

philips dl 701

Abstract: MEET CHN 507 chn 638 CHN 623 Diodes BT 742 chn 501 CHN 507 CHN 623 diode chn 743 CHN 749
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog