TL225
Abstract: ATC100A6R2CW150X
Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS
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PTFA220121M
PTFA220121M
12-watt
PG-SON-10
TL225
ATC100A6R2CW150X
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Untitled
Abstract: No abstract text available
Text: LDMOS Transistors in Power Microwave Applications S.J.C.H. Theeuwen, H. Mollee NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands steven.theeuwen@nxp.com, hans.mollee@nxp.com Abstract— LDMOS transistors have become the device choice for microwave applications. An overview is given of the LDMOS
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IEDM2006,
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra ILD1011M30 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET High Power Gain Superior thermal stability Gold Metal The high power transistor part number ILD1011M30 is designed for Avionics systems operating at 1030-1090 MHz. This LDMOS FET device
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ILD1011M30
ILD1011M30
ILD1011M30-REV-NC-DS-REV-B
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra ILD1214M10 Preliminary TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET High Power Gain Superior thermal stability Gold Metal The high power transistor part number ILD1214M10 is designed for LBand radar operating at 1200-1400 MHz. This LDMOS FET device under
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ILD1214M10
ILD1214M10
300us,
300us-10%
ILD1214M10-REV-PR1-DS-REV-B
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transistor c124
Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300
Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use
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PTMA080304M
PTMA080304M
20-lead
PG-DSO-20-63
transistor c124
TL184
TL272
tl271
TL181
TL279
tl298
TL168
TL308
TL300
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LDU05M-R
Abstract: LDU05 power 470-860mhz w MRF282SR1 MRF282S
Text: LDU05M-R 5W LDMos Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • • • • 470 - 860 MHz 28 ÷32 V 30V Nominal
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LDU05M-R
MRF282SR1
110x78x30
GR00209
LDU05M-R
LDU05
power 470-860mhz w
MRF282S
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dvb-t transmitters
Abstract: LDU05 LDU05M-R transposers LDU05M MRF282SR1 AMPLIFIER 5W
Text: LDU05M-R 5W LDMos Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • • • • 470 - 860 MHz 28 ÷32 V 30V Nominal
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LDU05M-R
MRF282SR1
110x78x30
GR00209
dvb-t transmitters
LDU05
LDU05M-R
transposers
LDU05M
AMPLIFIER 5W
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GR002
Abstract: MRF282SR1 ldmos
Text: LDV05M 5W LDMos Technology Amplifier Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • • • • 170 - 230 MHz 28 ÷32 V 30V Nominal
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LDV05M
MRF282SR1
120x78x30
GR00211
GR002
ldmos
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TL306
Abstract: TL184 TL167 TL307
Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use
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PTMA080304M
PTMA080304M
20-lead
PG-DSO-20-63
96stances.
TL306
TL184
TL167
TL307
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TL272
Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use
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PTMA080304M
PTMA080304M
20-lead
PG-DSO-20-63
TL272
TL184
TL181
tl271
TL308
Tl187 transistor
tl274
TL293
TL193
TL148
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transistor c118
Abstract: C124 transistor transisTOR C123 transistor c114 diagram for C114 transistor transistor c114 transistor c117 587-1352-1-ND PM820 transistor C124
Text: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency
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PTMA080304M
PTMA080304M
20-lead
PG-DSO-20-63
a080304
transistor c118
C124 transistor
transisTOR C123
transistor c114 diagram
for C114 transistor
transistor c114
transistor c117
587-1352-1-ND
PM820
transistor C124
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transistor c114
Abstract: No abstract text available
Text: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency
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PTMA080304M
PTMA080304M
20-lead
transistor c114
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MAR 737
Abstract: power 470-860mhz w Shoulder Electronics DVB-t2 470-860mhz Power amplifier 470-860MHz dvbt 2
Text: RPAM470860M01 Preliminary UHF DVB-T Module 1 Watt, 470 - 860 MHz The RPAM470860M01 is a 1W, UHF DVB-T amplifier module incorporating LDMOS technology. Utilizing SMA connectors and a single bias point connection, this module is ideal as a driver stage in a digital broadcast system.
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RPAM470860M01
RPAM470860M01
470-860MHz
8-32V
MAR 737
power 470-860mhz w
Shoulder Electronics
DVB-t2
470-860mhz Power amplifier
470-860MHz
dvbt 2
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AN1294
Abstract: J-STD-020B LET9045S PD57030S capacitor 220uf
Text: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE
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LET9045S
PowerSO-10RF
LET9045S
AN1294
J-STD-020B
PD57030S
capacitor 220uf
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Untitled
Abstract: No abstract text available
Text: LET9060S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 17 dB gain @ 945 MHz / 26V • NEW RF PLASTIC PACKAGE
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LET9060S
PowerSO-10RF
LET9060S
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Untitled
Abstract: No abstract text available
Text: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE
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LET9045S
PowerSO-10RF
LET9045S
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XD010-42S-D4F
Abstract: ALT101 LDMOS 1W
Text: Preliminary Product Description XD010-42S-D4F The XD010-42S-D4F 10W power module is a 2stage Class A amplifier module for use in the driver stages of linear RF power amplifiers of cellular base stations. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process.
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XD010-42S-D4F
XD010-42S-D4F
30mils
EDS-102938
ALT101
LDMOS 1W
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Anaren Microwave
Abstract: microwave office Curtice UGF21030 high power fet amplifier schematic fet curtice 063700 teflon s-parameter
Text: Design of a High Power Doherty Amplifier Using a New Large Signal LDMOS FET Model Simon M. Wood Cree Microwave Inc. simon_wood@cree.com Abstract There have been a number of papers written recently on the use of the Doherty amplifier technique at microwave frequencies. These have been
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Abstract: No abstract text available
Text: Product Description Sirenza Microdevices’ XD010-42S-D4F 8W power module is a robust 2stage Class A amplifier module for use in the driver stages of linear RF power amplifiers of cellular base stations. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit
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XD010-42S-D4F
XD010-42S-D4FY
XD010-EVAL)
EDS-102938
AN-060
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GSM repeater circuit
Abstract: Rogers 4350 datasheet base station power amp GSM repeater GSM repeater power amplifier module RF MODULE XD010-42S-D4F er35
Text: Product Description Sirenza Microdevices’ XD010-42S-D4F 8W power module is a robust 2stage Class A amplifier module for use in the driver stages of linear RF power amplifiers of cellular base stations. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit
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XD010-42S-D4F
XD010-42S-D4F
XD010-42S-D4FY
XD010-EVAL)
EDS-102938
AN-060
GSM repeater circuit
Rogers 4350 datasheet
base station power amp
GSM repeater
GSM repeater power amplifier module
RF MODULE
er35
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XD010-35S-D2F
Abstract: XD010-35S XD01035 RF amplifier module d2f schematic
Text: Preliminary Product Description The XD010-35S-D2F 10W power module is a 2-stage Class A/AB RF amplifier module for use in the driver stages of WCDMA power amplifiers. The power transistors are fabricated using Sirenza’s latest, high performance LDMOS II process. The unit operates from a
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XD010-35S-D2F
XD010-35S-D2F
30mils
EDS-102978
XD010-35S
XD01035
RF amplifier module
d2f schematic
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Repeater rf
Abstract: Rogers 4350 datasheet schematic diagram 800 watt power amplifier XD010-42S-D4F GSM 900 mhz repeater circuit
Text: XD010-42S-D4F Product Description Sirenza Microdevices’ XD010-42S-D4F 8W power module is a robust 2stage Class A amplifier module for use in the driver stages of linear RF power amplifiers of cellular base stations. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit
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XD010-42S-D4F
XD010-42S-D4F
XD010-EVAL)
EDS-102938
AN-060
Repeater rf
Rogers 4350 datasheet
schematic diagram 800 watt power amplifier
GSM 900 mhz repeater circuit
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200 watt schematics power amp
Abstract: 80021 GSM repeater circuit Rogers 4350 datasheet XD010-12S-D4F AN060
Text: XD010-12S-D4F Product Description Sirenza Microdevices’ XD010-12S-D4F 15W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of cellular base station power amplifiers. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune,
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XD010-12S-D4F
XD010-12S-D4F
XD010-EVAL)
EDS-102934
AN-060
200 watt schematics power amp
80021
GSM repeater circuit
Rogers 4350 datasheet
AN060
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Rogers 4350 datasheet
Abstract: AN060 XD010-12S-D4F kemet f 881 GSM repeater power amplifier module LDMOS 15w
Text: XD010-12S-D4F XD010-12S-D4FY Product Description Sirenza Microdevices’ XD010-12S-D4FY is a 15 Watt, 2-Stage class A/AB LDMOS power amplifier module designed for use in the 869-894 MHz frequency band. The module is internally matched to 50 ohms and operates directly from 28V making system integration very simple. Internal
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XD010-12S-D4F
XD010-12S-D4FY
XD010-12S-D4FY
XD010-EVAL)
EDS-102934
XD010-12S-D4F
AN-060
Rogers 4350 datasheet
AN060
kemet f 881
GSM repeater power amplifier module
LDMOS 15w
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