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    LDMOS DIGITAL Search Results

    LDMOS DIGITAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DCL541A01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Input disable Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL541B01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: High / Input disable Visit Toshiba Electronic Devices & Storage Corporation
    DCL542L01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: Low / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL540H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=4:0) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation

    LDMOS DIGITAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HP RF TRANSISTOR GUIDE

    Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
    Text: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS


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    PDF SG384/D HP RF TRANSISTOR GUIDE MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor

    Untitled

    Abstract: No abstract text available
    Text: NXP UHF power LDMOS transistor BLF884P S 350 W LDMOS RF power transistor for digital & analog transmitters High efficiency and excellent ruggedness make this 350 W LDMOS power transistor an ideal component for UHF broadcast transmitters and industrial applications.


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    PDF BLF884P OT1121A OT1121B-sized BLF884P

    LDMOS NONLINEAR

    Abstract: APP3617 DS1870 DS4303 DS4305 AN3617 LDMOS digital LDMOS
    Text: Maxim > App Notes > DIGITAL POTENTIOMETERS WIRELESS, RF, AND CABLE Keywords: DS1870, DS4303, DS4305, LDMOS, Power Amplifier, RF, Bias Sep 16, 2005 APPLICATION NOTE 3617 Using the DS4303 to Bias LDMOS RF Power Amps Abstract: LDMOS RF power amps dominate the GSM and CDMA base-station markets by providing excellent


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    PDF DS1870, DS4303, DS4305, DS4303 DS1870 DS4303. com/an3617 DS1870: DS4303: DS4305: LDMOS NONLINEAR APP3617 DS4305 AN3617 LDMOS digital LDMOS

    BLF4G22-45

    Abstract: BLF4G10-120 BLF4G22-100 BLF4G22-130 digital predistortion dpd 2carrier WCDMA
    Text: High efficiency LDMOS 4th Generation LDMOS boosts fuels 3G basestations performance of W-CDMA amplifiers To support high efficiency requirements of basestation power amplifiers, Philips 0.6 µm 4th generation LDMOS technology is a significant step forward compared to earlier 0.8 µm technologies, with a 50% higher


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    ne554

    Abstract: NE55410GR NE55410GR-T3-AZ TL12 TL13 TL15
    Text: LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different


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    PDF NE55410GR NE55410GR ne554 NE55410GR-T3-AZ TL12 TL13 TL15

    Untitled

    Abstract: No abstract text available
    Text: LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different


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    PDF NE55410GR NE55410GR PU10542EJ02V0DS IR260 WS260 HS350

    Untitled

    Abstract: No abstract text available
    Text: NXP UHF/DVB-T power LDMOS transistor BLF888A S The most powerful LDMOS broadcast transistor delivering 125 W output power Designed for broadband operation (470 and 860 MHz), this LDMOS transistor boasts one-octave wideband operation, extremely good ruggedness, very high output power, high efficiency, high


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    PDF BLF888A

    LDU60

    Abstract: ldmos MRF373A dvb-t transmitters MRF37 LDU60-R
    Text: LDU60-R 80W pep –27dBc LDMos Technology Amplifier Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • • • • • •


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    PDF LDU60-R 27dBc MRF373A 136x78x20mm GR00165 LDU60 ldmos dvb-t transmitters MRF37 LDU60-R

    dvb-t transmitters

    Abstract: 80w audio amplifier with tone control BLF878 LDU661C amplifier 400W RF Amplifier 500w M2.5 torque settings 100w audio amplifier 2 x 20w amplifier 400w amplifier
    Text: LDU661C 600W pep –27dBc min LDMOS Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates micro-strip technology and push-pull LDMOS to enhance ruggedness and reliability. Patented bias control and matching circuit.


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    PDF LDU661C 27dBc 100KHz BLF878 dvb-t transmitters 80w audio amplifier with tone control LDU661C amplifier 400W RF Amplifier 500w M2.5 torque settings 100w audio amplifier 2 x 20w amplifier 400w amplifier

    ldmos nec

    Abstract: No abstract text available
    Text: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different


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    PDF NE55410GR NE55410GR ldmos nec

    NE55410GR-T3-AZ

    Abstract: TL15 NE55410GR NE55410 ldmos nec
    Text: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different


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    PDF NE55410GR NE55410GR NE55410GR-T3-AZ TL15 NE55410 ldmos nec

    ldmos nec

    Abstract: No abstract text available
    Text: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different


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    PDF NE55410GR NE55410GR ldmos nec

    ldu45

    Abstract: power 470-860mhz w MRF9060 MRF9060 equivalent
    Text: LDU45 45W LDMos Technology Amplifier Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • • • • • • • • •


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    PDF LDU45 MRF9060 136x78x20mm GR00165 ldu45 power 470-860mhz w MRF9060 equivalent

    LDL8

    Abstract: PTF141501A 200w AUDIO AMPLIFIER 200w audio power amplifier 200W PUSH-PULL LDL80 LDMOS digital
    Text: LDL80 80W DAB LDMos Technology Designed for Digital Audio Broadcasting, this amplifier incorporates microstrip technology and push-pull LDMos Devices to enhance ruggedness and reliability. • • • • • • • • 1450 - 1500 MHz 28 ÷32 V 30V Nominal


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    PDF LDL80 80Wrms PTF141501A 5x125 GR00375 LDL8 200w AUDIO AMPLIFIER 200w audio power amplifier 200W PUSH-PULL LDL80 LDMOS digital

    dvb-t transmitters

    Abstract: GR00363 LDMOS 15w MRF9030 LDU25-R ldmos
    Text: LDU25-R 30W pep –27dBc LDMos Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single-end LDMos Devices to enhance ruggedness and reliability. • • • • • • • •


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    PDF LDU25-R 27dBc MRF9030 136x78x20mm GR00363 dvb-t transmitters GR00363 LDMOS 15w LDU25-R ldmos

    dvb-t transmitters

    Abstract: LDMOS 15w GR00363 LDU25 power 470-860mhz w MRF9030
    Text: LDU25 30W pep –27dBc LDMos Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single-end LDMos Devices to enhance ruggedness and reliability. • • • • • • • • •


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    PDF LDU25 27dBc MRF9030 136x78x20mm GR00363 dvb-t transmitters LDMOS 15w GR00363 LDU25 power 470-860mhz w

    dvb-t transmitters

    Abstract: MRF9060 LDMOS 15w Res-Ingenium
    Text: LDV75M-R 75W LDMos Technology Amplifier Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • 170 - 230 MHz • 28 ÷32 V 30V Nominal


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    PDF LDV75M-R 75Wps 50Wps 15Wrms MRF9060 120x78x30 GR00267 dvb-t transmitters LDMOS 15w Res-Ingenium

    LDV75M

    Abstract: LDV75M-R LDMOS 15w MRF9060 ldmos
    Text: LDV75M-R 75W LDMos Technology Amplifier Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • 170 - 230 MHz • 28 ÷32 V 30V Nominal


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    PDF LDV75M-R 75Wps 50Wps 15Wrms MRF9060 120x78x30 GR00267 LDV75M LDV75M-R LDMOS 15w ldmos

    LDU05M-R

    Abstract: LDU05 power 470-860mhz w MRF282SR1 MRF282S
    Text: LDU05M-R 5W LDMos Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • • • • 470 - 860 MHz 28 ÷32 V 30V Nominal


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    PDF LDU05M-R MRF282SR1 110x78x30 GR00209 LDU05M-R LDU05 power 470-860mhz w MRF282S

    5.1 audio power amplifier 400w

    Abstract: MRFA 2604 LDU400C LDU400C-R amplifier 400W MRF377 RF amplifier 400W 300w rf amplifier LDMOS digital GR002
    Text: LDU400C-R 400W pep –27dBc min LDMOS Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. • • • • • • • • •


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    PDF LDU400C-R 27dBc MRF377 115x85x5 GR00254 5.1 audio power amplifier 400w MRFA 2604 LDU400C LDU400C-R amplifier 400W RF amplifier 400W 300w rf amplifier LDMOS digital GR002

    MRF372

    Abstract: power 470-860mhz w LDU300 ING01 dvb-t transmitters HEATSINK PASTE WPS
    Text: LDU300 300W peak sync LDMOS Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. • • • • 470 - 860 MHz 28 ÷32 Volt 32 Nominal


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    PDF LDU300 300Wps 250Wps MRF372 175x85x30 GR00164 power 470-860mhz w LDU300 ING01 dvb-t transmitters HEATSINK PASTE WPS

    Untitled

    Abstract: No abstract text available
    Text: NXP 50 V LDMOS RF power transistors BLF881x and BLF888A Digital broadcasting at its best Operating between 470 and 860 MHz, the BLF881 driver and BLF888A (final) LDMOS transistor line-ups deliver one-octave wideband operation, excellent ruggedness, very high output power


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    PDF BLF881x BLF888A BLF881 BLF888A) BLF888A OT539

    dvb-t transmitters

    Abstract: LDU05 LDU05M-R transposers LDU05M MRF282SR1 AMPLIFIER 5W
    Text: LDU05M-R 5W LDMos Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • • • • 470 - 860 MHz 28 ÷32 V 30V Nominal


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    PDF LDU05M-R MRF282SR1 110x78x30 GR00209 dvb-t transmitters LDU05 LDU05M-R transposers LDU05M AMPLIFIER 5W

    LDU300

    Abstract: MRF372 LDMOS digital power 470-860mhz w thermal compound wps PAG24
    Text: LDU300 300W peak sync LDMOS Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. • • • • 470 - 860 MHz 28 ÷32 Volt 32 Nominal


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    PDF LDU300 300Wps 250Wps MRF372 175x85x30 GR00164 LDU300 LDMOS digital power 470-860mhz w thermal compound wps PAG24