LDMOS PA DRIVER Search Results

ne554

Abstract: NE55410GR NE55410GR-T3-AZ TL12 TL13 TL15
Contextual Info: LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different

Contextual Info: LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different

ldmos nec

Contextual Info: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different

ldmos nec

Contextual Info: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different

NE55410GR-T3-AZ

Abstract: TL15 NE55410GR NE55410 ldmos nec
Contextual Info: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different

NEM090603M-28

Contextual Info: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM090603M-28 N-CHANNEL SILICON POWER LDMOS FET FOR 75 W UHF-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NEM090603M-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for driver or final stage in 0.8 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/EDGE/D-AMPS/PDC cellular base station

Contextual Info: RF Power Amplifier PA Bias Controller X9470 FEATURES DESCRIPTION • Programmable Bias Controller IC for Class A and AB LDMOS Power Amplifiers • Adaptive System on Chip Solution • Bias Current Calibration to better than ±4% using Reference Trim DCP

X9470

Abstract: X9470V24I
Contextual Info: Preliminary Information RF Power Amplifier PA Bias Controller X9470 DESCRIPTION • Programmable Bias Controller IC for Class A and AB LDMOS Power Amplifiers • Adaptive System on Chip Solution • Bias Current Calibration to better than ±4% using Reference Trim DCP

NEC 09030

Abstract: NEM090303M-28 8712 RESISTOR ldmos nec
Contextual Info: PRELIMINARY DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM090303M-28 N-CHANNEL SILICON POWER MOS FET FOR UHF-BAND POWER AMPLIFIER DESCRIPTION The NEM090303M-28 is an N-channel enhancement-mode lateral MOS FET designed for driver stage in 0.5 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/D-AMPS/PDC cellular base station amplifiers. Dies are

Contextual Info: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 1755 LDMOS Technology for RF Power Amplifiers S. J. C. H. Theeuwen and J. H. Qureshi Invited Paper Abstract—We show the status of laterally diffused metal–oxide–semiconductor (LDMOS) technology, which has

SLD2083CZ

Contextual Info: Preliminary Product Description SLD2083CZ The SLD2083CZ is a 10W high performance LDMOS transistor designed for operation from 300MHz to 2200MHz. It is an excellent solution for applications requiring high linearity and efficiency at a low cost. The SLD2083CZ is typically used in the design of driver stages for

transistor smd 303

Abstract: smd 303 transistor smd transistor "3w" RF083 SLD1083CZ
Contextual Info: Preliminary Product Description SLD1083CZ The SLD1083CZ is a 3W high performance LDMOS transistor designed for operation from 300MHz to 2200MHz. It is an excellent solution for applications requiring high linearity and efficiency at a low cost. The SLD1083CZ is typically used in the design of driver stages for

bare Die mosfet

Abstract: SLD1083 MOSFET 20 NE 50 Z
Contextual Info: SLD-1000 Product Description 4 Watt Discrete LDMOS FET -Bare Die De sig ns Sirenza Microdevices’ SLD-1000 is a robust 4 Watt high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD-1000 is typically used as a driver or output stage for

1000 watt mosfet power amplifier

Abstract: MOSFET 20 NE 50 Z 80021 SLD-1000 SLD-1083CZ 1000 watts amplifier schematic diagram with part
Contextual Info: SLD-1000 Product Description 4 Watt Discrete LDMOS FET -Bare Die De sig ns Sirenza Microdevices’ SLD-1000 is a robust 4 Watt high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD-1000 is typically used as a driver or output stage for

1000 watt mosfet power amplifier

Abstract: amplifier circuit diagram 1000 watt 80021 SLD-1000 SLD-1083CZ AN-039 1000 watts amplifier schematic diagram with part rf amplifier class a fet mosfet bare Die power mosfet
Contextual Info: SLD-1000 Product Description 4 Watt Discrete LDMOS FET -Bare Die Sirenza Microdevices’ SLD-1000 is a robust 4 Watt high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD-1000 is typically used as a driver or output stage for

video balun schematic

Abstract: LDMOS 60W POWER AMPLIFIER GSM repeater circuit SDM-09060-B1F video balun AN067
Contextual Info: SDM-09060-B1F 925-960 MHz Class AB 60W Power Amplifier Module Product Description The SDM-09060-B1F 60W power module is an impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. It is a

Contextual Info: SDM-08060-B1F Product Description 869-894 MHz Class AB 65W Power Amplifier Module Sirenza Microdevices’ SDM-08060-B1F 65W power module is a robust, impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage.

08120

Abstract: SDM-08120
Contextual Info: SDM-08120 Product Description 869-894 MHz Class AB 120W Power Amplifier Module The SDM-08120 120W power module is an impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. It is a

800w rf power amplifier circuit diagram

Abstract: MRF6VP11KH 1000w power amplifier circuit diagram 200W PUSH-PULL 1000w power AMPLIFIER pcb circuit amplifier circuit diagram class D 1000w 500w FM power amplifier circuit diagram MRFE6VP6300H RF Amplifier 500w 175 mhz 1000w class d circuit diagram schematics
Contextual Info: White Paper 50V RF LDMOS An ideal RF Power technology for ISM, broadcast and commercial aerospace applications Freescale Semiconductor www.freescale.com/rfpower I. INTRODUCTION RF LDMOS RF Laterally Diffused MOS , hereafter referred to as LDMOS, is the dominant device technology used in

motherboard repair Chip level

Abstract: CMOS090 CMOS065 gsm based digital notice board using arm processor baseband GSM BTS 3G CHIP GENERATION TELECOM RF gsm transceiver IC qubic4
Contextual Info: Philips Semiconductors Our comprehensive portfolio RF ASICs Converters Complete portfolio of ASIC services. Right expertise, processes, tools and manufacturing to tackle 3G challenges. Customer-driven DAC & ADC for high performance and system innovations.

GSM repeater circuit

Abstract: LDMOS push pull SDM-08060-B1F
Contextual Info: SDM-08060-B1F SDM-08060-B1FY Product Description Sirenza Microdevices’ SDM-08060-B1F 65W power module is a robust, impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune solution for high

LDMOS push pull

Abstract: SDM-09060-B1F RF power amplifier MHz
Contextual Info: SDM-09060-B1F SDM-09060-B1FY Product Description Sirenza Microdevices’ SDM-09060-B1F 65W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune solution for high power

Contextual Info: SDM-08060-B1F SDM-08060-B1FY Product Description Sirenza Microdevices’ SDM-08060-B1F 65W power module is a robust, impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune solution for high

BLC5G22LS-100

Abstract: BLC5G22-100 LDMOS LDMOS Technology for RF Power Amplifiers BLC5G22 metallization LDMOS digital BLF4G22-100 ldmos pa driver BLF5G22-180
Contextual Info: 5th Generation LDMOS Philips’ 0.4 µm technology for base station RF PAs sets the standard in W-CDMA amplifier efficiency For RF power amplifiers PAs and base station manufacturers, our 5th generation LDMOS technology is a major advance. This technology offers key advantages for