LDMOS TECHNOLOGY FOR RF POWER AMPLIFIERS Search Results

SD57045

Abstract: CAPACITOR 33PF AN1224 40w resistor hf amplifier for transformer
Contextual Info: AN1224 APPLICATION NOTE LDMOS RF POWER TRANSISTORS FOR FM BROADBOARD APPLICATION Ahmed Mimouni 1. ABSTRACT LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher gain, efficiency,

CAPACITOR 33PF

Abstract: SD57045 AN1224 hf amplifier for transformer 40w resistor 1000 watt ferrite transformer ELECTROLYTIC capacitor, .10uF 50V 30mils
Contextual Info: AN1224 APPLICATION NOTE LDMOS RF POWER TRANSISTORS FOR FM BROADBOARD APPLICATION Ahmed Mimouni 1. ABSTRACT LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher gain, efficiency,

Contextual Info: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 1755 LDMOS Technology for RF Power Amplifiers S. J. C. H. Theeuwen and J. H. Qureshi Invited Paper Abstract—We show the status of laterally diffused metal–oxide–semiconductor (LDMOS) technology, which has

08051J5R6BBT

Abstract: j452 cms 920
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi–stage

J293

Abstract: ATC600S150JW J1805 ATC600S6R8CW atc600s1 J053 TO272 RM73B2BT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi–stage structure. Its

MRF6VP11KH

Abstract: MRF6VP2600H 88-108 rf amplifier 1230 if fm amplifier HF Amplifier 300w hf amplifier 100w power amplifier s band 3 ghz 100w UHF Phase Shifter RF Amplifier 500w 300w rf amplifier uhf
Contextual Info: Freescale’s Industrial, Scientific and Medical RF Semiconductors ISM Solutions Advanced technology for top RF power performance Utilizing Freescale’s innovative 50V VHV6 LDMOS very high voltage sixth generation Laterally Typical ISM Applications Diffused Metal Oxide Semiconductor technology,

MWIC930

Contextual Info: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its

Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip

Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage

3332-G

Contextual Info: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its wideband

Contextual Info: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip

amplitude modulation applications

Abstract: LDMOS AN1223
Contextual Info: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain

mosfet high power rf ldmos

Abstract: Bipolar Junction Transistor AN1223 RF MOSFET CLASS AB
Contextual Info: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain

Contextual Info: Freescale Semiconductor Technical Data MW4IC915 Rev. 5, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi−stage

Contextual Info: Freescale Semiconductor Technical Data MW4IC915N Rev. 7, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage

J344

Abstract: J530
Contextual Info: Freescale Semiconductor Technical Data MWIC930 Rev. 4, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi−stage structure. Its

Contextual Info: Freescale Semiconductor Technical Data MW4IC915N Rev. 8, 3/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi-stage

mw4ic915nb

Abstract: AN1977 AN1987 MW4IC915GNBR1 MW4IC915NBR1 A113 AN1955 ic marking z7 GM 950 motorola
Contextual Info: Freescale Semiconductor Technical Data MW4IC915N Rev. 7, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage

020C

Abstract: AN1955 AN1987 MWIC930 MWIC930GR1 MWIC930R1 A 2057
Contextual Info: Freescale Semiconductor Technical Data MWIC930 Rev. 2, 12/2004 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its

J252

Abstract: A113 AN1955 AN1987 MWIC930 MWIC930GNR1 MWIC930GR1 MWIC930NR1 MWIC930R1
Contextual Info: Freescale Semiconductor Technical Data MWIC930 Rev. 4, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi−stage structure. Its

1206 cms diode

Abstract: 020C AN1955 AN1987 MW4IC915 MW4IC915GMBR1 MW4IC915MBR1
Contextual Info: Freescale Semiconductor Technical Data MW4IC915 Rev. 3, 12/2004 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage

ATC100A101JW

Abstract: ATC100A1R8BW ATC100A240JW GRM31CR72A105KA01 ATC100A270JW NE5531079A-T1-A ne5531
Contextual Info: SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology

Contextual Info: SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology

NE552R479A-T1A

Abstract: VP215 GSM1900 NE552R479A NE552R479A-T1 ldmos nec
Contextual Info: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our