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    HYR1612820G-653

    Abstract: HYR1612820G-745 HYR1612820G-840 HYR1612820G-845 HYR1812820G-653 HYR1812820G-745 HYR1812820G-845 INFINEON, B20 A17 INFINEON marking a86
    Contextual Info: HYR 16xx20G/HYR 18xx20G Rambus RIMM Modules Direct RDRAM RIMM Modules with 144 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,


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    16xx20G/HYR 18xx20G HYR1612820G-653 HYR1612820G-745 HYR1612820G-840 HYR1612820G-845 HYR1812820G-653 HYR1812820G-745 HYR1812820G-845 INFINEON, B20 A17 INFINEON marking a86 PDF

    Contextual Info: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V


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    MS18R1622 288Mbit 16Mx18) 288Mb 16K/32ms PDF

    Contextual Info: LP3985 www.ti.com SNVS087AB – MAY 2004 – REVISED NOVEMBER 2011 LP3985 Micropower, 150mA Low-Noise Ultra Low-Dropout CMOS Voltage Regulator Check for Samples: LP3985 FEATURES limit 1 • 2 • • • • Miniature 5-I/O micro SMD and SOT-23-5 package Logic controlled enable


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    LP3985 SNVS087AB LP3985 150mA OT-23-5 PDF

    circuit of rowa television

    Abstract: toshiba b54
    Contextual Info: TOSHIBA TH M R2E2Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 18-BIT 64M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2E2Z is a 33,554,432-word by 18-bit direct rambus dynamic RAM module consisting of 2 TC59RM818MB Direct Rambus DRAMs on a printed circuit board.


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    432-WORD 18-BIT 18-bit TC59RM818MB B2M-wordX18 32M-wordX 600MHz 32M-word 711MHz circuit of rowa television toshiba b54 PDF

    Contextual Info: THMR2N16-6/-7/-8 TOSHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 268,435,456-WORD BY 16-BIT 512M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2N16 is a 268,435,456-word by 16-bit direct rambus dynamic RAM module consisting of 16 TC59RM816MB and Direct Rambus DRAMs on a printed circuit board.


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    THMR2N16-6/-7/-8 456-WORD 16-BIT THMR2N16 TC59RM816MB 256M-word 600MHz -16CSP PDF

    MIG toshiba

    Abstract: ABB B45 THMR1E16-6 THMR1E16-7 B75 ABB hiab 837 B34 toshiba mig
    Contextual Info: TOSHIBA THMR1E16-6/-7/-8 TO SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 134,217,728-WORD BY 18-BIT 256M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR1E16 is a 134,217,728-word by 18-bit direct rambus dynamic RAM module consisting of 8 TC59RM718MB and 8 TC59M718RB Direct Rambus DRAMs on a printed circuit board.


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    THMR1E16-6/-7/-8 128M-word 600MHz 711MHz 800MHz 16cydes) -16CSP MIG toshiba ABB B45 THMR1E16-6 THMR1E16-7 B75 ABB hiab 837 B34 toshiba mig PDF

    HR128E08B

    Abstract: HR128E08C HR128E08D HR128E08E HR128N08C HR128N08D HR128N08E
    Contextual Info: 128 MB RIMMTM Module with 128/144Mb RDRAMs Direct Rambus RIMM™ Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s Direct Rambus RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and nonECC modules.


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    128/144Mb 128Mb 144Mb HR128N08E HR128N08D HR128N08C HR128N08B HR128E08E HR128E08D HR128E08C HR128E08B HR128E08C HR128E08D HR128E08E HR128N08C HR128N08D HR128N08E PDF

    144MB

    Abstract: B641 High Connection Density
    Contextual Info: 64MB SO-RIMMTM Module with 128/144 Mb RDRAMs Direct Rambus SO-RIMM™ Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s Direct Rambus SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and


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    128Mb 144Mb HS064N04E HS064N04D HS064N04C HS064N04B HS064E04E HS064E04D HS064E04C HS064E04B 144MB B641 High Connection Density PDF

    Direct-Rambus-RIMM

    Abstract: ic marking B48 750 B36 Transistor NEC 12d G100 MC-4R128CPE6C IC MARKING A60 6043b label LOT CODE NEC
    Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128CPE6C Direct RambusTM DRAM RIMMTM Module 128M-BYTE 64M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other


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    MC-4R128CPE6C 128M-BYTE 64M-WORD 16-BIT) MC-4R128CPE6C PD488448) 600MHz, 711MHz 800MHz Direct-Rambus-RIMM ic marking B48 750 B36 Transistor NEC 12d G100 IC MARKING A60 6043b label LOT CODE NEC PDF

    MC-4R64FKE8S

    Abstract: PD488588 PD488588FF
    Contextual Info: DATA SHEET Direct Rambus DRAM SO-RIMMTM Module MC-4R64FKE8S 32M words x 18 bits Description Features The Direct Rambus SO-RIMM module is a generalpurpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal


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    MC-4R64FKE8S M01E0107 E0140N30 MC-4R64FKE8S PD488588 PD488588FF PDF

    Direct-Rambus-RIMM

    Abstract: MC-4R128FKE6D PD488588 PD488588FF
    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE6D Direct Rambus DRAM RIMMTM Module 128M-BYTE 64M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other


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    MC-4R128FKE6D 128M-BYTE 64M-WORD 16-BIT) MC-4R128FKE6D PD488588) 600MHz, 711MHz 800MHz M01E0107 Direct-Rambus-RIMM PD488588 PD488588FF PDF

    EL B17

    Contextual Info: UGD128R16 8 08U6J(7J) Data sheets can be downloaded at www.unigen.com 256/288MB Bytes (128M x 16/18 bits) RAMBUS SO-RIMM MODULE 160 Pin SO-RIMM based on 8 pcs 8M x 16/18 RDRAM & 16K Refresh 128M x 16 bits, 128M x 18bits w/ECC, 800MHz and 600MHz GENERAL DESCRIPTION


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    UGD128R16 08U6J 256/288MB 18bits 800MHz 600MHz 160-Pin UGD128R1608U6J-L6/G6/T6 256MB 128Mx16) EL B17 PDF

    SMI064RBSBD01

    Abstract: SMI072RBSBD01 RSL 17
    Contextual Info: SMI064RBSBD01 SMI072RBSBD01 September 17, 2001 Orderable Part Numbers Module Part Number Cycle Time Speed SMI064RBSBD01 45ns 800MHz SMI072RBSBD01 45ns 800MHz Revision History • September 17, 2001 Modifed datasheet part number from SMI064/72RBSAD01 to SMI064/72RBSBD01


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    SMI064RBSBD01 SMI072RBSBD01 800MHz SMI064/72RBSAD01 SMI064/72RBSBD01 604-39R SMI064RBSBD01 SMI072RBSBD01 RSL 17 PDF

    RG25

    Abstract: OKI RDRAM OKI RDRAM 18
    Contextual Info: SMU128UBUAUUU SMU144UBUAUUU March 2, 2001 Revision History • March 2, 2001 Datasheet updated. • July 11, 2000 Corrected table on page 10. • June 12, 2000 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com


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    SMU128UBUAUUU SMU144UBUAUUU 128/144MByte 8Mx16/18 160-pin RG25 OKI RDRAM OKI RDRAM 18 PDF

    SCK 183

    Abstract: 128Mx16
    Contextual Info: UG7128R16 8 16U6J(7J) Data sheets can be downloaded at www.unigen.com 256M Bytes (128M x 16/18 bits) RAMBUS RIMM MODULE 184 Pin RIMM based on 16 pcs 8M x 16/18 RDRAM & 4K Refresh 128M x 16 bits, 128M x 18bits w/ECC, 800MHz and 600MHz GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)


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    UG7128R16 16U6J 18bits 800MHz 600MHz 184-Pin 256MB SCK 183 128Mx16 PDF

    Contextual Info: TOSHIBA TH M R2 E4Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 18-BIT 128M Bytes Direct Rambus D RAM MODULE DESCRIPTION The THMR2E4Z is a 67,108,864-word by 18-bit direct rambus dynamic RAM module consisting of 4 TC59RM818MB Direct Rambus DRAMs on a printed circuit board.


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    108f864-WORD 18-BIT 864-word 18-bit TC59RM818MB 64M-word 64M-wordXl8 600MHz 711MHz PDF

    toshiba a75

    Abstract: ejdalf
    Contextual Info: TOSHIBA THMR1E8-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108.864-WORD BY 18-BIT 128M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR1E8 is a 67,108,864-word by 18-bit direct rambus dynamic RAM module consisting of 8 TC59RM718MB Direct Rambus DRAMs on a printed circuit board.


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    864-WORD 18-BIT 18-bit TC59RM718MB 64M-wordXl8 600MHz 16cycles) 711MHz toshiba a75 ejdalf PDF

    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE8D Direct Rambus DRAM RIMMTM Module 128M-BYTE 64M-WORD x 18-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other


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    MC-4R128FKE8D 128M-BYTE 64M-WORD 18-BIT) MC-4R128FKE8D PD488588) 600MHz, 711MHz 800MHz M01E0107 PDF

    Contextual Info: DATA SHEET Direct Rambus DRAM SO-RIMMTM Module MC-4R64FKE8S-840 32M words x 18 bits Description Features The Direct Rambus SO-RIMM module is a generalpurpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal


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    MC-4R64FKE8S-840 M01E0107 E0259N10 PDF

    smd marking code lcsb

    Abstract: smd marking ldqb OFA1202 ldrb marking smd code marking LP3985 LDQB LDRB lcrb LCZB marking LCJB
    Contextual Info: LP3985 Micropower, 150mA Low-Noise Ultra Low-Dropout CMOS Voltage Regulator General Description Key Specifications The LP3985 is designed for portable and wireless applications with demanding performance and space requirements. LP3985 is stable with a small 1µF ± 30% ceramic or


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    LP3985 150mA smd marking code lcsb smd marking ldqb OFA1202 ldrb marking smd code marking LP3985 LDQB LDRB lcrb LCZB marking LCJB PDF

    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE8S Direct RambusTM DRAM SO-RIMMTM Module 128M-BYTE 64M-WORD x 18-BIT Description The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking


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    MC-4R128FKE8S 128M-BYTE 64M-WORD 18-BIT) MC-4R128FKE8S PD488588) 800MHz M01E0107 PDF

    RDRAM RAMBUS

    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE6D Direct RambusTM DRAM RIMMTM Module 256M-BYTE 128M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other


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    MC-4R256FKE6D 256M-BYTE 128M-WORD 16-BIT) MC-4R256FKE6D PD488588) 600MHz, 711MHz 800MHz RDRAM RAMBUS PDF

    Elpida Memory

    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R512FKE6D-840 Direct Rambus DRAM RIMMTM Module 512M-BYTE 256M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other


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    MC-4R512FKE6D-840 512M-BYTE 256M-WORD 16-BIT) MC-4R512FKE6D PD488588) 600MHz, 711MHz 800MHz M01E0107 Elpida Memory PDF

    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE8S-840 Direct Rambus DRAM SO-RIMMTM Module 128M-BYTE 64M-WORD x 18-BIT Description The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking


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    MC-4R128FKE8S-840 128M-BYTE 64M-WORD 18-BIT) MC-4R128FKE8S PD488588) 800MHz M01E0107 E0258N10 PDF