LED 670 NM Search Results

LDS-A514RI

Abstract: LED 7000 mcd
Contextual Info: Lumex PCB and Panel Mount LED Indicators, Displays and Laser Diodes PCB LED Indicators Panel Mount LED Indicators T3 mm, Single LED, Standard Stock No. Mfr.Õs Type Emitted Wavelength Color Peak nm 670-1083 SSF-LXH103GD 670-1084 SSF-LXH103ID 670-1085 SSF-LXH103YD

ic 565 application

Abstract: c557
Contextual Info: Lumex LED Lamps, Opto-Electronic Components and LED Panel Holders LED Lamps T3 mm, Size LED Lamps Stock No. T5 mm, Super Brite LEDs, Dome Lens Mfr.Õs Type Emitted Color 670-1057 SSL-LX3044GD 670-1058 SSL-LX3044ID 670-1059 SSL-LX3044YD EACH Wavelength Lens

ELJ-670-629

Contextual Info: ELJ-670-629 TECHNICAL DATA High Power LED, Jumbo Package AlGaAs ELJ-670-629 is high power LED in an black anodised aluminium case, with thread socket for easy handling and heat sink mounting. It is designed for medical appliances, illumination, remote control and optical communications, light

Contextual Info: H T-13/4 670 nm High Radiant Intensity Emitter Technical Data HEMT-3300 Features Description • • • • • • The HEMT-3300 is a visible, near-IR, source using a GaAsP on GaP LED chip optimized for maximum quantum efficiency at 670 nm. The emitter’s beam is

HEMT-3300

Contextual Info: T-13/4 670 nm High Radiant Intensity Emitter Technical Data HEMT-3300 Features Description • • • • • • The HEMT-3300 is a visible, near-IR, source using a GaAsP on GaP LED chip optimized for maximum quantum efficiency at 670 nm. The emitter’s beam is

Hexagonal

Abstract: H2A1-H670
Contextual Info: H2A1-H670 IR High Power single chip LED H2A1-H670 is a GaAlAs based, high power 670 nm single chip LED in standard hexagonal Aluminum package for general application. Slots in the Aluminum-core PCB allow for easy mounting of standard collimating optics and are

Contextual Info: RS ITEM NO 209-670 SIGNO ITEM NO SMMG48BA9A LED/Multiled LED Optimum voltage V 48Vac/dc Mounting Size 10x21 Rectifier - Mounting Finish BA9s AC current - Protection - DC current - Mount Holder - Voltage Tolerance(%) 10% Chip Qty - Optimum temperature (°C)

Contextual Info: RS ITEM NO 210-670 APEM ITEM NO Q14P1CXXVG12E LED/Multiled LED Optimum voltage V 12Vac/dc Intensity Mounting Size 14mm Rectifier Half-wave Reverse Voltage 5V(max) Mounting Finish Prominent AC current - Protection IP67 DC current 16-20mA(max) Mount Holder

ELD-670-524

Contextual Info: LED - Lamp ELD-670-524 discontinued 16.11.2007 rev. 02 Radiation Type Technology Case Red DDH GaAlAs/GaAlAs 5 mm plastic lens Description High-power, high-speed red LED in standard 5 mm package,with lens for optimal beam forming, housing without standoff leads

Jumbo LED

Contextual Info: Jumbo-LED ELJ-670-629 16.11.2007 rev. 04 Radiation Type Technology Case Ruby 3W AlGaAs/GaAlAs Plastic lens, metal case High-power ruby-color LED in an aluminium case with thread socket, for easy handling and heat sink mounting 1,5 Ø11 Ø1,7 Ø16 Ø12,5 Description

SMB1N-670D

Contextual Info: SMB1N-670D v 1.0 11.06.2014 Description SMB1N-670D is a surface mount AlGaInP High Power LED with a typical peak wavelength of 670 nm and radiation of 250 mW. It comes in SMD package PA9T with silver plated soldering pads (lead free solderable), copper heat sink, and molded with silicone resin.

EL-670-24

Contextual Info: LED - Chip ELС-670-24 Preliminary 10.04.2007 rev. 03/06 Radiation Type Technology Electrodes Red DDH GaAlAs/GaAlAs N cathode up typ. dimensions (µm) 310 Ø120 typ. thickness 150 (±25) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm dotted, 25% covered

SMB1W-670R

Contextual Info: SMB1W-670R TECHNICAL DATA High Power LED, SMD AlGaAs SMB1W-670R is a AlGaAs high power LEDs mounted on a cooper heat sink with a 5x5 mm SMD package and molded with epoxy resin. On forward bias, it emits a radiation of typical 330 mW at a peak wavelength of 670 nm.

SMB1N-670D-02

Contextual Info: SMB1N-670D-02 v 1.0 17.03.2014 Description SMB1N-670D-02 is a surface mount AlGaInP High Power LED with a typical peak wavelength of 670 nm and radiation of 290 mW. It comes in SMD package PA9T with silver plated soldering pads (lead free solderable), copper heat sink, and molded with silicone resin.

Contextual Info: INDUSTRIAL LED PANEL LAMP INDICATORS 670 Series: 0 25.4 mm Mounting Domed Lens Six Chip LED NEW PRODUCT • B i-p olar • Low h eat generation • IP 67 sealing • M LQ5 • M TBF 8 0 ,0 0 0 h rs C°3£ • 30 m m m ounting kit availab le V Scrap view of

SensoPart

Abstract: D-79695
Contextual Info: FT 50 RLH Laser-Reflexionslichttaster mit Hintergrundausblendung / Laser proximity switch with background suppression - Hintergrundausblendung / background suppression - Laser-Rotlicht 670 nm / laser red light 670 nm - Laserschutzklasse 2 / laser protection class 2

D-79695

Abstract: 670 nm RLA-20 SensoPart RLA20-F-K5
Contextual Info: FT 50 RLA-20 Laser-Reflexionslichttaster mit Analogausgang / laser proximity switch with analogue output 090-13367 Kontaktbelegung / connection BN 18 . 28 V WH Umsm + BN 18 . 28 V 1 EL IM YE Umsm GN 0 V Schirm / shield INA 090-13359 RY - Laser-Rotlicht 670 nm / laser red light 670 nm

670 nm

Abstract: EN-60825-1 SensoPart D-79695
Contextual Info: FT 50 RLA-40 Laser-Reflexionslichttaster mit Analogausgang / laser proximity switch with analogue output - Laser-Rotlicht 670 nm / laser red light 670 nm - Laserschutzklasse 2 / laser protection class 2 - Meßbereich 45 . 85 mm / measuring range 45 . 85 mm

tunable lasers diode applications

Abstract: LDM115G-633 LDM115G 2 Wavelength Laser Diode LGO115 LDL175 LDL175-633-1 LDL175-633-1-2 LDL175-670-3 LDL175-670-3-2
Contextual Info: Laser Diode Modules TUNABLE LASER DIODES LDM115G LDL175 • Miniature housing style allows application in tight spaces LASER DIODES Key Features • Output in the visible – 633 and 670 nm LDM Miniature Series modules are available in 633 and 670 nm wavelengths, with output powers of 0.9

Contextual Info: 2012-08-17 Silicon NPN Phototransistor with Vλ Characteristics NPN-Silizium-Fototransistor mit Vλ Charakteristik Version 1.0 SFH 3711 Features: Besondere Merkmale: • Spectral range of sensitivity: 470 . 670 nm • Spektraler Bereich der Fotoempfindlichkeit:

Contextual Info: W hpl HEW LETT WL'EM PACKARD T-l3/4 670 nm High Radiant Intensity Emitter Technical Data HEMT-3300 Features • High Efficiency • Nonsaturating Output • Narrow Beam Angle • Visible Flux Aids Alignment • Bandwidth: DC to 3 MHz • IC Compatible/Low Current

Contextual Info: RED LASER DIODE DL-3039-011 Ver.3 Apr. 1999 Features Package • Short wavelength : 670 nm Typ. • Low threshold current : Ith = 30 mA (Typ.) • High operating temperature : 5 mW at 60°C Tolerance : ± 0.2 (Unit : mm) ø9.0 - 0.03 ø5.35 ø4.75± 0.15

DL-3149-057

Abstract: barcode scanner DL 3149-057 3149-057
Contextual Info: RED LASER DIODE DL-3149-057 Ver.1 Jun. 2000 Features Package Tolerance : ± 0.2 Unit : mm ø5.6 - 0.025 ø4.4 • Short wavelength : 670 nm (Typ.) • Low threshold current : Ith = 25 mA (Typ.) • High operating temperature : 5 mW at 60°C • Small package : ø5.6 mm

Contextual Info: RED LASER DIODE DL-3149-057 Ver.1 Jun. 2000 Features Package Tolerance : ± 0.2 Unit : mm ø5.6 - 0.025 ø4.4 • Short wavelength : 670 nm (Typ.) • Low threshold current : Ith = 25 mA (Typ.) • High operating temperature : 5 mW at 60°C • Small package : ø5.6 mm