LED AND PHOTOTRANSISTOR PAIR Search Results

ET9570

Abstract: ET9571 app-d2 IC-Haus Gmbh
Contextual Info: 3 CHANNEL DIFFERENTIAL AMPLIFIER-COMPARATOR ET9571 Phototransistor input version of the standard ET9570 FEATURES • Supply Voltage Range 4.5V to 30V • Designed for phototransistor inputs • Index channel gated by A and B • Current sink for LED drive (see application note

IL215At

Contextual Info: IL215AT/IL216AT/IL217AT Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, With Base Connection FEATURES A 1 8 NC K 2 7 B NC 3 6 C NC 4 5 E i179002 DESCRIPTION The IL215AT/IL216AT/IL217AT are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including

LETEX

Abstract: LA211
Contextual Info: Photocoupler Part Name: LA211 LA211 photocoupler is an optically coupled pair employing a GaAs infrared LED and a silicon NPN phototransistor. Features ˙SOP package 4 Pin type in miniature design ˙80% minimun current transfer ratio ˙1500Vrms Input/Output isolation

Contextual Info: Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • Infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads

led phototransistor pair

Abstract: IR phototransistor
Contextual Info: M0C2000 Advance Information HERMETIC OPTOELECTRONIC COUPLER PHOTOTRANSISTOR/IR LED COUPLED PAIR NPN PHOTOTRANSISTOR AND PN INFRARED EMITTING DIODE . . . G a lliu m A rs en id e L E D o p tic a lly c o u p led to a S ilic o n P h o to T r a n ­ sistor designed fo r a p p lic a tio n s re q u irin g e le c tric a l iso la tio n , highc u rre n t tra n s fe r ra tio s , small package size and

OP598

Abstract: led and phototransistor pair number led phototransistor 3 pin OPB100 infrared sensor 190
Contextual Info: Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • Infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads

LETEX

Abstract: LA311
Contextual Info: Photocoupler Part Name: LA311 Description LA311 photocoupler is an optically coupled pair employing a GaAs in infrared LED and silicon NPN phototransistor. Features ‧SOP package 8 Pin type in miniature design ‧80% minimun current transfer ratio ‧1500V rms Input/Output isolation

PHOTOTRANSISTOR 3 LEGS

Abstract: EE-SX1235-P2 IR sensor and photo diode pair Electric Welding Machine diagram EE-SA401-P welding machine diagram
Contextual Info: omRon Technical Information Technical Information Non-amplified Output Sensing Methods Features Operating principle Sensing method Transmissive A pair of light source element LED and detector element (phototransistor) opposing each other on the same optical axis is housed in a case to

led phototransistor pair

Abstract: LED phototransistor IC PACKAGE all datasheet phototransistor current sensor data sheet IR LED infrared led datasheet LED infrared Infrared Phototransistor phototransistor sensor IR LED infrared led CC 1215
Contextual Info: Optical Emitter and Sensor Pair Features • • • • • • 890nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance up to 12 inches Low profile package 24” wire leads UL1429 , 26 AWG Description Absolute Maximum Ratings

OPB100EZ

Abstract: led and phototransistor pair number opb100-sz
Contextual Info: Optical Emitter and Sensor Pair OPB100Z, OPB100-EZ, OPB100-SZ Features: • • • • • • Infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads

led and phototransistor pair number

Abstract: OP598 transistor 24 led phototransistor pair OPB100 OP298 OPB100EZ OPB100-EZ OPB100-SZ OPB100Z
Contextual Info: Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • 890 nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads

Contextual Info: Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • 890 nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads

led and phototransistor pair number

Abstract: transistor 24 led phototransistor pair OP298 OP598 OPB100 OPB100EZ OPB100-EZ OPB100-SZ OPB100Z
Contextual Info: Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • 890 nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads

led phototransistor 3 pin

Abstract: OP298 OP598 OPB100 OPB100EZ OPB100-EZ OPB100-SZ OPB100Z led and phototransistor pair number
Contextual Info: Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • 890 nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads

CC 1215

Contextual Info: Optical Emitter and Sensor Pair OPB100, OPB100-E, OPB100-S Technical Data Features • • • • • • 890nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance up to 12 inches Low profile package 24” wire leads UL1429 , 26 AWG

SLOTTED OPTICAL SENSOR

Contextual Info: Slotted Optical Switch OPB200 Features: • Housing material Opaque to visible and infrared light • Non–contact switching Product Photo Here • Printed PCBoard mount • 0.200” 5.080 mm slot width, 0.320” (8.128 mm) slot depth Description: OPB200 contains an Infrared LED and a Phototransistor paired in a plastic housing .

OPB200

Contextual Info: Slotted Optical Switch OPB200 Features: • Housing material Opaque to visible and infrared light • Non–contact switching Product Photo Here • Printed PCBoard mount • 0.200” 5.080 mm slot width, 0.320” (8.128 mm) slot depth Description: OPB200 contains an Infrared LED and a Phototransistor paired in a plastic housing .

IL216AT

Abstract: led phototransistor pairs without optocoupler IL215AT IL217AT VDE0884
Contextual Info: IL215AT/IL216AT/IL217AT Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, With Base Connection FEATURES A 1 8 NC K 2 7 B NC 3 6 C NC 4 5 E i179002 DESCRIPTION The IL215AT/IL216AT/IL217AT are optically coupled pairs with a Gallium Arsenide infrared LED and a

Contextual Info: Slotted Optical Switch OPB200 Features: • • • • Housing material Opaque to visible and infrared light Non–contact switching Product Photo Here Printed PCBoard mount 0.200” 5.1 mm slot width, 0.320” (8.1 mm) slot depth Description: The OPB200 contains an Infrared LED (890 nm) and a Phototransistor paired in a plastic housing.

OPB200

Abstract: OP140 OP550
Contextual Info: Slotted Optical Switch OPB200 Features: x Housing material Opaque to visible and infrared light x Non–contact switching x Printed PCBoard mount Product Photo Here x 0.200” 5.1 mm slot width, 0.320” (8.1 mm) slot depth Description: The OPB200 contains an Infrared LED (890 nm) and a Phototransistor paired in a plastic housing.

Contextual Info: IL211AT/212AT/213AT Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection in SOIC-8 package FEATURES A 1 8 NC K 2 7 B NC 3 6 C NC 4 5 E i179002 DESCRIPTION The IL211AT/IL212AT/IL213AT are optically coupled pairs with a Gallium Arsenide infrared LED and silicon

led phototransistor pairs without optocoupler

Abstract: VDE0884 IL211AT IL212AT IL213AT
Contextual Info: IL211AT/212AT/213AT Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection in SOIC-8 package FEATURES A 1 8 NC K 2 7 B NC 3 6 C NC 4 5 E i179002 DESCRIPTION The IL211AT/IL212AT/IL213AT are optically coupled pairs with a Gallium Arsenide infrared LED and silicon

all type transistor equivalent

Abstract: pin details of photo transistor block diagram circuit diagram for photointerrupter IR block photodiode phototransistor HV photodiode chip silicon Infrared Phototransistor pn junction diode structure high sensitivity reflective photo interrupter ir led PHOTODIODE
Contextual Info: Introduction Detecting devices Photodiode When light is incident on a silicon PN junction, the light generates electron and hole pairs in the silicon crystal. When the energy of the incident light is greater than the silicon energy band gap Eg , the electrons and holes scatter in accordance with the concentration gradient of the

OP550

Abstract: OPS690 OPS691 OPS692 OPS693 QPS690
Contextual Info: OPTEK Product Bulletin OPS690 July 1996 LED and Photosensor Pair Types OPS69Q, OPS691, OPS692, OPS693 Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Lateral side-looking clear plastic package • High current transfer ratio • Low cost plastic package