LEM* 731 Search Results

APP-20

Abstract: long range locators diagram RXTUG 2H type of microprocessor in printer APP20 X101 power cable fault locator power transformers fault ranza printer high voltage transformer
Contextual Info: ASEA RELAYS INFORMATION From/Date RFR, D ecem ber 1984 Edition 2 RK 881-300 E Reg 7631 Page 1 F a u lt lo c a to r ty p e RANZA A fa u lt lo c ato r is a co m p lem en t to th e transm ission line p ro te c tiv e relay s. ASEA's fa u lt lo c a to r ty p e RANZA, which is required in one

ms 7254 ver 1.1

Abstract: K2354 528G L0734 ICS RS 3197 9800522B SKS 16F
Contextual Info: July 1979 S.A. Distributor E l e c t r o n ic \ \ B u il d in g E lem ents PU R V E Y O R S OF A L L Telephone: 7 8 -9 2 2 1 1 6 P.O. Box 4 6 0 9 , Pretoria Telex: 3 -0 1 8 1 SA In te l C o rp o ra tio n , 1979 p t y l t d ELECTRONIC C OM PON EN TS Pine Square

lem 731

Abstract: lem* 731
Contextual Info: blE J> m MITSUBISHI bEMRflST GD147b4 4Bñ « M I T S FU-44SLD-7 D I S C R E T E SC 1.3 mm LD Module with Singlemode Fiber Pigtail M odule ty p e F U -4 4 S L D -7 h a s been developed fo r co u p lin g a sin g lem o d e o p tic a l fib e r a n d a 1 .3 # m w a v e le n g th InG aA sP LD (L a se r d io d e).

Q982

Abstract: INV-NS-217 Q983 INV-NS
Contextual Info: CROSS-REFERENCE DIG I-KEY Q983 DIG I-KEY Q982 □PTREX JKL ALT, REVISION HISTDRY 289-1033 73-1149 IN V -N S -2 1 7 BXB-N S-217 REV ECO ND / CHANGE DESCRIPTION DATE A 1008 / Production Release APPRDVED 07/10/98 F. A. D. OPERATING CHARACTERISTICS: INPUT VOLTAGE RANGE:

ml4809

Abstract: diode F4 3J TN4S FB3480 ML4823 ML4825 UC1825
Contextual Info: sie MICRO LINEAR » • t c n a m ö 00027^4 a'j s mntN S e p tem b er 1989 PRELIMINARY % .M icro Linear USICs FB3480 Power Supply Controller Array GENERAL DESCRIPTION T h e FB3480 P o w e r Su pply C o n tro lle r A rray is a n e w c o n ce p t in S w itch M o d e P o w e r Su p p ly C o n tro lle r

INV-TH-201

Abstract: Q982 OA75
Contextual Info: CROSS-REFERENCE REVISION HISTORY D IG I-KEY Q983 2 8 9 -1 0 2 8 D IG I-K E Y Q982 73-1172 OPTREX IN V -T H -2 0 1 2 J K L ALT. B X B -T H -2 0 1 -2 R EV A ECO NO / CHANGE DESCRIPTION DATE 1003 / P r o d u c t io n R e l e a s e APPROVED 07/01/98 F. A. D;

Contextual Info: 17E D BIGIDEASIN BIGPOWER" •■■ m 7STß7t.4 D[10G352 7 ■ ■ P o w e r T e c h POWERTECH INC FET BIPOLAR POWER LINEAR LC-1002 ~ p 3 3 - 3 e/ Maximum Ratings VCES. 450 V V1sol lc . 90 A T, .

Contextual Info: T 731 N Elek trisch e E ig enschaften Electrical properties H ö c h s tz u lä s s ig e W e rte M a x im u m rated v a lu e s Periodische Vorwärts- und R ückw ärts-Spitzensperrspannung Vorwärts-Stoßspitzensperrspannung R ückwärts-Stoßspitzensperrspannung

ERC20

Abstract: ERC20-02 T151 T760 T0220A
Contextual Info: E R C 2 5 A FAST RECOVERY DIODE • 4# ^ : Features High voltage by mesa design. • « fia t* High reliability Connection Diagram : Applications • M & X 'f- y T *? High speed switching. Maximum Ratings and Characteristics : Absolute Maximum Ratings Items

lem 732 733

Abstract: lem 731 IRF3303 lem 733 1rf730 IRF330-333 5N40 MTP5N35 733 331 lem* 731
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE I 34b‘ïb74 0 0 5 7 0 ^ □ IRF330-333/IRF730-733 M TM /M TP5N35/5N40 N-Channel Power M O SF ET s, 5.5 A, 350 V/400 V FAIRCHILD A Schlumberger Company Power And Discrete Division — Description TO-204AA TO-220AB IRF330 IRF331

4b23

Abstract: HY51C256 hyundai 235 moo 42j
Contextual Info: HYUNDAI ELECT RO NI CS Û3 Ü>ËJ 4b750ññ ODDQISI *4 | ~ 467 508 8 HYUNDAI ELEC TR ON ICS 83D 00151 D T-M cr23>-|5 O C TO B ER 1986 D ESC R IPTIO N , The HY51C256L offers a typical standby current as low as 10// A w hen RAS Vdd—0.2V. During stand­ by (i.e. only refresh cycles the refresh period can

A2426

Abstract: 2SK2213-01L MOSFET 500V 5A vus3
Contextual Info: 2 S K 2 2 1 3 - 1 L FUJI PO W ER M O S-F ET S N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline Drawings I Features 'Hich speed switching 1Low on-resistance 'No secondary breakdown 'Low driving power 1Hie h voltage 'V Gi - ±30V Guarantee ' Av ilanche-proof

Contextual Info: AMPLIMITE Subminiature D Connectors Catalog 82068 Revised 9-96 Filtered AMPUMITE Subminiature D Connectors Technical Documents Various technical documents are available for your use: Product Specifications describe technical perform­ ance, characteristics and

1-842931-0

Contextual Info: AMPLIMITE Subminiature D Connectors Catalog 82068 Revised 9-96 Filtered AM PUM ITE Subminiature D Connectors Technical Documents Various technical documents are available for your use: Product Specifications describe technical perform­ ance, characteristics and

Cross Reference power MOSFET

Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258

25A 1300 GR 07F

Contextual Info: AMPLIMITE Subminiature D Connectors Catalog 82068 Revised 9-96 Filtered AM PUM ITE Subminiature D Connectors Technical Documents V arious te ch n ica l d o cu m e n ts are available for yo u r use: Product Specifications d e s c rib e te ch n ica l p e rfo rm ­

ic 7483 pin configuration

Abstract: T 427 transistor TYP 513 309 2SC4570 ts 1683 nec 5261
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA803T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD µPA803T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1 6

ATIC 39 b4

Contextual Info: KeyCoder UR5HCFJL USAR product sp ecificatio ns Self Power Management Laptop/Notebook Keyboard Encoder GreenCoder™ UR5HCFJL Description Features The UR5HCFJL G reenC oder ™ is a unique, q uasi-zero pow er keyboard e ncod er that provides an optim um

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

Contextual Info: FUJITSU LTD 53E 1 • BTM^Sb 0002404 436 « F C A J T -4 e -2 -? *- A p ra m i FUJITSU Edition 1.0 DATASHEET' MB8441-45/-55 CMOS 64K-BIT DUAL PORT SRAM 8K X 8-BIT CMOS DUAL PORT STATIC RANDOM ACCESS MEMORY The Fujtau M88441 it an 8K words x 8 bits dual-port high-performance Static Random

Contextual Info: Ml IVnO DATA SHEET SEPTEMBER 1988 HM 65231 2K x 8 C M O S DUAL PORT RAM FEATURES . ONE SEPARATE ADDRESS/DATA PORT, ONE MULTIPLEXED ADDRESS/DATA PORT . 3 PROGRAMMABLE ARBITRATION MODES ON CHIP . INT AND BUSY OUTPUTS . FULLY STATIC OPERATION . TTL COMPATIBLE INPUT/OUTPUT

7C373-100

Abstract: 7C373-125 7C373-66 7C373-83 7C373L-66 CY7C373 CY7C374 FLASH370
Contextual Info: fax id: 6128 — —— Æ CY7C373 r~'fV D D 17 Q Q j r I 1 IT C O O UltraLogic 64-Macrocell Flash CPLD Features FLASH370 fam ily, th e C Y 7 C 3 73 is de sig ned to bring the ease of use and high pe rfo rm an ce of th e 22V 10 to high -den sity C PLDs.

7C373-100

Abstract: 7C373-125 7C373-66 7C373-83 7C373L-66 CY7C373 CY7C374 FLASH370 ZXXXX
Contextual Info: fax id: 6128 —— — Æ r ~ 'f V j r D I 1 D 1 7 Q Q IT C O O CY7C373 UltraLogic 64-Macrocell Flash CPLD Features FLASH370 fam ily, th e C Y 7 C 3 73 is de sig ned to bring the ease of use and high pe rfo rm an ce of th e 22V 10 to high -den sity C PLDs.

Contextual Info: Paradigm' bTMlQ'îQ 0 0 0 G 4 Û 3 GSfl « P A T 2048 x 18: PDM42235 4096 x 18: PDM42245 CMOS High Speed Synchronous FIFOs 2048 x 18-Bit to 4096 x 18-Bit Features Description □ High speed access times Com'l: 1 0 ,1 5 ,2 0 ,2 5 ,3 0 ,3 5 ,5 0 ns Mil: 1 5 ,2 0 ,2 5 ,3 0 ,5 0 ns