LEM LTA Search Results

HEME 1000

Abstract: lem module 50 lem lta 50p lem heme current 1000 LEM LTA lem current LTA FR7200 LTA51P 50psp1 lem module
Contextual Info: LEM CURRENT TRANSDUCERS Module LTA 50-P/SP1 Instantaneous Outputs Definition - Principle The LEM type LTA 50-P/SP1 is a transducer employing the Hall effect to measure DC and complex waveform AC currents in a non invasive manner. Galvanic isolation is provided

lem lta 100p

Abstract: HEME 1000 lem module 50 FR7200 lem module lem current lem heme current 1000 LEM LTA lem 50 p lem+lta+100p/sp1
Contextual Info: LEM CURRENT TRANSDUCERS Module LTA 100-P/SP1 Instantaneous Outputs Definition - Principle The LEM type LTA 100-P/SP1 is a transducer employing the Hall effect to measure DC and complex waveform AC currents in a non invasive manner. Galvanic isolation is provided

LEM LTA

Abstract: lem module lta 50pr lem current LTA LTA50PR lem module HEME 1000 lem 50 p 50PR
Contextual Info: LEM CURRENT TRANSDUCERS Module LTA 50-PR Instantaneous and True RMS Outputs Definition - Principle The LEM type LTA 50-PR is a transducer employing the Hall effect to measure DC and complex waveform AC currents in a non invasive manner. Galvanic isolation is provided

lem lt 100 p

Abstract: lem current lt 100 lem module HEME 1000 lem heme current 1000 lem current LTA
Contextual Info: LEM CURRENT TRANSDUCERS Module LTA 100-PR Instantaneous and True RMS Outputs Definition - Principle The LEM type LTA 100-PR is a transducer employing the Hall effect to measure DC and complex waveform AC currents in a non invasive manner. Galvanic isolation is provided

lem current

Abstract: lem module lem module 50 LEM LT 200-S lem current LTA LTA200-SP2 LTA200-S code lem hall current transducer lem module hall effect
Contextual Info: •70 ^^ o S S/ /' oI ' LEM CURRENT TRANSDUCERS MODULE LTA 200-S/SP2 Instantaneous Output Deflnition - Principle The LEM type LTA 200-S/SP2 is a transducer employing the Hall effect to measure DC and complex waveform AC currents in a non invasive manner. Galvanic isolation

lem lta 50p

Abstract: LTA50P/SP1 HEME International lem current HEME 1000 lem module 50 Lta100 lem module noryl grade 50P/SP1
Contextual Info: LEM CURRENT TRANSDUCERS Module LTA 50P/SP1 ! cj ~7~ S Instantaneous Outputs . 03, Definition - Principle The LEM type LTA50P/SP1 is a transducer employing the Hall Effect to measure D.C. and complex waveform A.C. currents in a non invasive manner. Galvanic isolation is provided between the primary (measured) and the analogue

HEME 1000

Abstract: lem module LTA100PR lem current HEME International lem module 50 microsecond
Contextual Info: LEM HEME LEM CURRENT TRANSDUCERS Module LTA100PR Instantaneous and True RMS Outputs . Definition - Principle T h e L EM type LTA100PR is a transducer em ploying the Hall Effect to m easure D.C. and com plex w aveform A.C. currents in a n o n invasive m anner. Galvanic isolation is provided betw een the prim ary (m easured ) an d the analogue

Contextual Info: "BIG IDEAS IN 100 AMPERE POWER DARLINGTON MT-6002 FEATURES O Vceo.400V lem. 100A Vcb0.450V Pd.385W Veb0. 10V ejc . 0.45°C/W

M6404A

Abstract: 6404v V024
Contextual Info: O K I Semiconductor MSM6404A/6404VS High speed and High performance 4-Bit Microcontroller G EN ER A L DESCRIPTIO N T h e M S M 6 4 0 4A m icro co n tro ller is a low -p ow er d ev ice im p lem en ted in co m p lem ento ry m etal-oxid e sem icon d u ctor technology. T h e M SM 6404A is op tim ized for high -speed p rocessin g and com plicatedcontrol applications.

V67D

Abstract: BDV67B
Contextual Info: BDV67A; B BDV67C; D 11 PHILIPS INTERNATIONAL SbE D • 711002b 0 QM33T2 Til M P H I N T - 13 DARLINGTON POWER TRANSISTORS N P N ep ita x ia l base D arling to n transistors fo r audio o u tp u t stages and general a m p lifie r and switching applications. PNP co m p lem ents are B D V 6 6 A , B, C and D. M atch ed c o m p lem en tary pairs can be supplied.

KSE350

Contextual Info: KSE350 PNP EPITAXIAL SILICON TRANSISTOR HIGH COLLECTO R-EM ITTER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORM ER • C o m p lem en t to K S E 3 4 0 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector- B ase Vo ltage

4863-2

Abstract: 48636 IC LC7821 4863 LC7821 EN4863 u 4863 48635 DIP30S LC7536R
Contextual Info: Ordering number : EN4863 CMOS LSI LC7536R No. 4863 SAhYO High Breakdown Voltage Serial Control Electronic Volume Control J Overview Package Dimensions The LC7536R is an electronic volume control IC that im p lem en ts volum e and balan ce fu n c tio n s w ith a

3845b

Abstract: 3K45
Contextual Info: CS-3845B Current Mode PWM Control Circuit with 50% Max Duty Cycle D escription Features The CS-3845B p ro vid es all the neces­ exceeds 51 '% . The u n d ervo ltag e lock­ sary features to im p lem ent off-line out feature ensures that V ^ p f. is stabi­

tl 0741

Abstract: fuji ipm 6MBP15RA120 6MBP15RA AC2500 P619 6MBP1 7z fuse AC20DV
Contextual Info: This material and the Information heroin is the properly of Fuji Electric Co .Lid They shall be neither reproduced, copied lem. or disclosed in any way whatsoever for the use of any third pany.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co. Ltd.

Contextual Info: warn H E W L E T T m LEM PA C K AR D 200-V/160 Ohm, 1 Form A, Small-Signal Solid State Relay Technical Data HSSR-8200 Features Applications Description • Compact Solid-State Bidirectional Signal Switch • Normally-Off Single-Pole Relay Function 1 Form A

carry save adder

Abstract: 74F384 F384 N74F384D N74F384N
Contextual Info: FAST 74F384 Multiplier 8-Bit S e rial/P a ra lle l T w o ’s C o m p lem ent M ultiplier Preliminary Specification FAST Products FEATURES • 8-bit by 1-bit sequential logic element • Multiplies two numbers represented in Two's Complement • Parallel inputs accept and store

hd68450

Abstract: utc 1018 HD68450u
Contextual Info: HD68450 - Direct Memory Access Controller NMOS M icroprocessor im p lem en ted system s are becom ing increas­ ingly co m p lex , particu larly w ith the advent o f high -perfo rm ance 16-bit M PU devices w ith large m em o ry addressing capability. In

Contextual Info: WhoI HEWLETT m LEM P A C K A R D T-18/4 5 mm High Intensity LED Lamps Technical Data Features * Reliable and Rugged • Available on Tape and Reel * High Intensity * Choice of 3 Bright Colors High Efficiency Red Yellow High Performance Green • Popular T -l3/4 Diameter

Contextual Info: G E SOLID STATE 01 D E | 3fl7S0fll DGlEbl? 1 | i 17 _ Ö Technical Data CD54/74HC151, CD54/74HCT151 ~ T ~ C > 7 '3 l- £ / 8-lnput Multiplexer Type Features: • ■ C om p lem e ntary data ou tputs B u ffe re d Inputs and ou tp u ts

RI58-0

Abstract: hengstler 720 counter Hengstler ri 41 Hengstler Hengstler encoder 720 encoder hengstler Hengstler counter 400 RI58 Hengstler RI58 encoder hengstler ri58
Contextual Info: Type Rl 58 Incremental Shaft Encoders with OPTOASIC • To 40,000 steps by 10,000 pulses • Sh o rt circuit proof and overload protected • • • • Syn ch ro flange Max. pulse freq u en cy 300 kHz RS 422 Push-pull co m p lem en tary Encoder self tests/

741HC

Abstract: f 741hc
Contextual Info: Technical Data CD54/74HC151 CD54/74HCT151 F ile N u m b e r 1645 High-Speed CMOS Logic 8-Input Multiplexer Type Features: • • 7 Ë- 1 C om p lem e ntary data ou tputs B uffe red inpu ts and ou tputs VCC = ’ 6 GND - 8 MCS-J84JI FUNCTIONAL DIAGRAM

l 0534

Abstract: l2530
Contextual Info: W hnW H E W L E T T m LEM P a c k a r d Dual Channel, High Speed Optocouplers Technical Data HCPL-2530 HCPL-2531 HCPL-4534 HCPL-0530 HCPL-0531 HCPL-0534 Features Applications Description • 15 kV/|is Minimuin Common Mode Transient Immunity at VCM = 1500 V

Ic 7442

Contextual Info: T h a i H EW LETT mWiM P AC K AR D 101 Element Bar Graph Array Technical Data HDSP-8820 HDSP-8825 HDSP-8835 Features • High R esolution 1% • E xcellent E lem ent A ppearance Wide, Recognizable Elem ents M atched LEDs for U niform ity Excellent Elem ent

Contextual Info: PNP EPITAXIAL TIP145/146/ 147 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN M INh FE = 1000 @ V CE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE T O -3 P • C o m p lem en t to T IP 1 4 0 /1 4 1 /1 4 2