LET9060 Search Results

LET9060 Datasheets (9)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
LET9060		STMicroelectronics	RF FETs, Discrete Semiconductor Products, IC RF POWER MOSFET N-CH PWRSO10	Original	PDF		11
LET9060C		STMicroelectronics	RF Power Transistor	Original	PDF	36.41KB	5
LET9060C		STMicroelectronics	RF FETs, Discrete Semiconductor Products, MOSFET N-CH 80V 12A M-243	Original	PDF		9
LET9060F		STMicroelectronics	RF FETs, Discrete Semiconductor Products, MOSFET N-CH 80V 12A M-250	Original	PDF		9
LET9060S		STMicroelectronics	RF Power Transistor	Original	PDF	301.49KB	10
LET9060S		STMicroelectronics	RF FETs, Discrete Semiconductor Products, IC RF POWER MOSFET N-CH PWRSO10	Original	PDF		11
LET9060STR		STMicroelectronics	RF Power Transistor	Original	PDF	301.49KB	10
LET9060STR		STMicroelectronics	RF FETs, Discrete Semiconductor Products, RF FET LDMOS 80V POWERSO-10RF	Original	PDF		11
LET9060TR		STMicroelectronics	RF FETs, Discrete Semiconductor Products, RF FET LDMOS 80V POWERSO-10RF	Original	PDF		11

LET9060 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: LET9060F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 18 dB gain @ 945 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european	Original	LET9060F 2002/95/EC LET9060F	PDF
ATC800A3R3BT Abstract: ATC100B1R5CW Contextual Info: STEVAL-TDR030V1 RF power amplifier based on the LET9060S for 2-way radio and general wireless services Data brief Features • Excellent thermal stability ■ Frequency: 760-870 MHz ■ Supply voltage: 32 V ■ Output power: 100 W ■ Gain: 14 dB min ■ Efficiency: 45% min	Original	STEVAL-TDR030V1 LET9060S STEVAL-TDR030V1 ATC800A3R3BT ATC100B1R5CW	PDF
Contextual Info: LET9060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT @ 28 V = 60 W with 18 dB gain @ 945 MHz ■ POUT (@ 36 V)= 90 W with 18 dB gain @ 945	Original	LET9060C 2002/95/EC LET9060C	PDF
Contextual Info: LET9060F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT @ 28 V = 60 W with 18 dB gain @ 945 MHz ■ POUT (@ 36 V)= 90 W with 18 dB gain @ 945	Original	LET9060F 2002/95/EC LET9060F	PDF
LDMOS transistor 1W Abstract: J-STD-020B LET9060S PD57030S AN1294 smd transistor AO capacitor 0.1uf 500v Contextual Info: LET9060S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 17 dB gain @ 945 MHz / 26V • NEW RF PLASTIC PACKAGE	Original	LET9060S PowerSO-10RF LET9060S LDMOS transistor 1W J-STD-020B PD57030S AN1294 smd transistor AO capacitor 0.1uf 500v	PDF
Contextual Info: LET9060S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 17 dB gain @ 945 MHz / 26V • NEW RF PLASTIC PACKAGE	Original	LET9060S PowerSO-10RF LET9060S	PDF
Contextual Info: LET9060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 18 dB gain @ 945 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european	Original	LET9060C 2002/95/EC LET9060C	PDF
smd transistor marking A4 Abstract: PowerSO-10RF marking st smd diode marking code J-STD-020B LET9060S LET9060STR LET9060TR stmicroelectronics PowerSO-10RF marking Contextual Info: LET9060 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 17.2 dB gain @ 960 MHz / 28 V ■ New RF plastic package	Original	LET9060 PowerSO-10RF LET9060 PowerSO-10RF. smd transistor marking A4 PowerSO-10RF marking st smd diode marking code J-STD-020B LET9060S LET9060STR LET9060TR stmicroelectronics PowerSO-10RF marking	PDF
2L TRANSISTOR Abstract: LET9060F 945 TRANSISTOR M250 Contextual Info: LET9060F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 18 dB gain @ 945 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european	Original	LET9060F 2002/95/EC LET9060F 2L TRANSISTOR 945 TRANSISTOR M250	PDF
transistor C 945 Abstract: LET9060C 945 TRANSISTOR M243 transistor d 945 Contextual Info: LET9060C RF POWER TRANSISTORS Ldmos Enhanced Technology PRELIMINARY DATA N-CHANNEL MOSFETs ENHANCEMENT-MODE LATERAL • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W WITH 17.3 dB gain @ 945 MHz • BeO FREE PACKAGE • HIGH GAIN	Original	LET9060C LET9060C transistor C 945 945 TRANSISTOR M243 transistor d 945	PDF
2L TRANSISTOR Abstract: 945 TRANSISTOR transistor d 945 16824 transistor 945 LET9060C M243 Contextual Info: LET9060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 18 dB gain @ 945 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european	Original	LET9060C 2002/95/EC LET9060C 2L TRANSISTOR 945 TRANSISTOR transistor d 945 16824 transistor 945 M243	PDF