LF 023 Search Results

107D

Abstract: 204C 213B
Contextual Info: LF-402/LF-418 Wideband RF/Pulse Transformers .01/100 MHz/,01-100 MHz LcS/EflZff mOHOQtVICES GUARANTEED MINIMUM PERFORMANCE DATA SPECIFICATIONS FOR MODEL LF-402 2.5 .01-100 .5 1.5:1 i £3 1 .01 Frequency in MHz 10 1 100 LF-418 1 .01-100 .5 2.0:1 1.5 ; I 2 ! 3

107D

Abstract: 204C 213B
Contextual Info: LF-402/LF-418 Wideband RF/Pulse Transformers .01/100 MHz/,01-100 MHz LcS/EflZA* mOHOQtVICES GUARANTEED MINIMUM PERFORMANCE DATA SPECIFICATIONS FOR MODEL LF-402 2.5 .01-100 .5 1.5:1 i £3 1 .01 Frequency in MHz 10 1 100 LF-418 1 .01-100 .5 2.0:1 1.5 ; I 2 ! 3

samsung 2GB Nand flash 121 pins

Abstract: SLC NAND endurance 100k
Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB5 MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1

Flash Memory datasheet mmc

Abstract: TCA 785 application note mlc nand flash lsb msb SLC NAND endurance 100k KFN2G16Q2M-DEB5 samsung "nor flash" sensing Samsung oneNand Mux TCA 785 63FBGA KFM1G16Q2M-DEB5
Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB5 MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0

samsung "nor flash" sensing

Abstract: 63FBGA KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6
Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.2

SLC NAND endurance 100k

Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0

samsung 2GB Nand flash 121 pins

Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1

63FBGA

Abstract: KFM1G16Q2M-DEB5 KFN2G16Q2M-DEB5
Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB5 MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.2

lf412

Abstract: QQ-S-365A Design of H.F. Wideband Power Transformers 107D 204C 213B LF-412 of transformer MIL-STD-202E 106d
Contextual Info: LF-412 Wideband RF/Pulse Transformers ZSIRflìIfl fcr GUARANTEED MINIMUM PERFORMANCE DATA TYPICAL PERFORMANCE SPECIFICATIONS FOR MODEL LF-412 Type: 50 ohm unbalanced 50 ohm unbalanced ph. rev. DC isolated - 1 dB Bandwidth, MHz Midband insertion loss dB VSWR

MIL-T-55631

Abstract: LF-412 lf412 MIL-STD202E 107D 204C 213B LF 412
Contextual Info: fcr ZSIRflilfl LF-412 Wideband RF/Pulse m cM om cfs GUARANTEED MINIMUM PERFORMANCE DATA TrnT2°sMHi TYPICAL PERFORMANCE SPECIFICATIONS FOR MODEL LF-412 Type: 50 ohm unbalanced 50 ohm unbalanced ph. rev. DC isolated - 1 dB Bandwidth, MHz Midband insertion loss dB

Contextual Info: T3/DS3/E3/STS-1 Transformer ELECTRONICS INC. EPA3582 & EPA3582-LF • Through Hole Package • 3000 Vrms Isolation with Reinforced Insulation • Operating Temperature Range : -40˚C to +85˚C • Add “-LF” after part number for Lead Free Electrical Parameters @ 25°C

rf transformer 50 ohm to 0.1 ohm

Abstract: LF-402 1055 107D 204C 213B
Contextual Info: Lzmma GUARANTEED MINIMUM PERFORMANCE DATA m LF-402 2.5 It .01-100 .5 1.5:1 i £3 1 .01 Frequency in MHz 10 1 100 LF-418 Type: 50 ohm unbalanced 200 ohm unbalanced 1 .01-100 .5 2.0:1 1.5 ; I 2 ! 3 ¡Wit .01 1 Frequency in MHz NOTE: DESCRIPTION , 1.5 j •2 2

PS2018

Abstract: PS2016B PS2006B PS2022 nec scr PS2021 PS2007B PS2023 PS2401A ic ps2016b
Contextual Info: N EC ELECTRONICS INC S^C D • bM57SaS QOOSMSb D ■ NECE C H AR AC TER ISTIC S Ta = 2 5 •C ABSOLUTE MAXIMUM RATINGS (T a= 25 "Cl FEATURES TYPE NO. IC(m A) lF(mA) B V(V a C) ! T o pt('C ) (lF = 1 0 I PS2015 4 K 80 150 High in p u t c u rre n t ' 80 Industrial use

SAMSUNG 256Mb NAND Flash Qualification Report

Abstract: Samsung nand flash 2GB MLC 0301H 803A samsung 1Gb nand flash Samsung 2Gb MLC Nand flash samsung 2GB Nand flash samsung 2GB X16 Nand flash samsung dual lcd samsung MLC nand flashes
Contextual Info: OneNAND1G KFG1G16Q2A-DEBx OneNAND2G(KFH2G16Q2A-DEBx) OneNAND4G(KFW4G16Q2A-DEBx) Preliminary FLASH MEMORY OneNANDTM Preliminary Information Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2A-DEBx 1.8V(1.7V~1.95V) Extended 63FBGA(LF)

TCA 785 application note

Abstract: KFM1G16Q2A TCA 700 v tca 785 128Mb DDR SDRAM samsung version 0.3 Samsung 2Gb 3V MLC Nand flash Samsung MLC Samsung oneNand Mux 63FBGA 1004C
Contextual Info: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) Preliminary FLASH MEMORY MuxOneNANDTM Preliminary Information Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFM1G16Q2A-DEBx 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2A-DEBx

8015

Contextual Info: OneNAND4G KFW4G16Q2M-DxB6 OneNAND2G(KFH2G16Q2M-DxB6) OneNAND1G(KFG1G16x2M-DxB6) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1G16D2M-DEB6 2.65V(2.4V~2.9V)

KFW4G16Q2M-DEB5

Abstract: 63FBGA KFG1G16Q2M-DEB5 KFH2G16Q2M-DEB5 KFG1G16x2M-DxB5 NAND FLASH DDP samsung 649
Contextual Info: OneNAND4G KFW4G16Q2M-DxB5 OneNAND2G(KFH2G16Q2M-DxB5) OneNAND1G(KFG1G16x2M-DxB5) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1G16D2M-DEB5 2.65V(2.4V~2.9V)

SSL-LX22R13SUGD

Contextual Info: PART NUMBER UNCONTROLLED DOCUMENT REV. SSL-LX22R13SUGD 13.50 [0.531] 023.00 [0 0 .9 0 6 ] I— 4.0 [0.157] 020.00 [0 0 .7 8 7] ELECTRO-OPTICAL CHARACTERISTICS Ta =2 5 X 15,24 [0,600] PARAMETER 2.70 [0.106] MIN PEAK WAVELENGTH REVERSE VOLTAGE lf= 2 0 m A MAX

OneNAND

Abstract: KFH2G16Q2M-DEB5 63FBGA KFG1G16Q2M-DEB5 KFW4G16Q2M-DEB5
Contextual Info: OneNAND4G KFW4G16Q2M-DEB5 OneNAND2G(KFH2G16Q2M-DEB5) OneNAND1G(KFG1G16Q2M-DEB5) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB5 1.8V(1.7V~1.95V)

4GB MLC NAND

Abstract: samsung 2GB Nand flash samsung 1Gb nand flash Samsung Electronics. NAND flash memory Samsung MLC 63FBGA KFG1G16Q2M-DEB6 KFH2G16Q2M-DEB6 KFW4G16Q2M-DEB6 0235H
Contextual Info: OneNAND4G KFW4G16Q2M-DEB6 OneNAND2G(KFH2G16Q2M-DEB6) OneNAND1G(KFG1G16Q2M-DEB6) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB6 1.8V(1.7V~1.95V)

KFW4G16Q2M-DEB5

Abstract: OneNAND KFH2G16Q2M-DEB5 USB Flash Memory SAMSUNG 63FBGA KFG1G16Q2M-DEB5
Contextual Info: OneNAND4G KFW4G16Q2M-DEB5 OneNAND2G(KFH2G16Q2M-DEB5) OneNAND1G(KFG1G16Q2M-DEB5) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB5 1.8V(1.7V~1.95V)

OneNAND

Abstract: 63FBGA KFG1G16Q2M-DEB6 KFH2G16Q2M-DEB6 KFW4G16Q2M-DEB6 NAND Flash MLC
Contextual Info: OneNAND4G KFW4G16Q2M-DEB6 OneNAND2G(KFH2G16Q2M-DEB6) OneNAND1G(KFG1G16Q2M-DEB6) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB6 1.8V(1.7V~1.95V)

Contextual Info: 8368602 flh SOLITRON D lF | f l3 b f lb 0 2 DEVICES □ □ □ E 3 ci3 2 INC 86D 02393 D T ó J - // |~ SCHOTTKY RECTIFIERS SSP820 SSP830 SSP840 Bolitron D E V I C E S , I NC. POWER SQHOTTKY RECTIFIERS 8 AMPERES FEATURES HIGH EFFICIENCY NANOSECOND SWITCHING

Contextual Info: Product Detail Page Direct Links Page 1 of 2 . Start > Search=30220801* > 30220801 30220801 Cross Reference Assistant Ad RoHS/LF P/N search Document & Drawing search 30220801 Application tooling Services 6 way Component-to-Wire Female housing . Email Datasheet