LG 26 LC 51 Search Results

PT4572A

Abstract: TO-117A az4v pt45
Contextual Info: nOTOROLA SC XSTRS/R F 4bE D • b3b7554 00^5132 M ■ MOTb T -2 S -Û 5 MOTOROLA ■i SEM ICONDUCTOR ■ TECHNICAL DATA PT45/2A The RF Line NPN Silicon High Frequency Transistor lc = zoo mA HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for broadband class A applications requiring high output, low distortion

PT4579

Contextual Info: MOTOROLA SC X S T R S / R M OTOROLA F 4bE D • b3b?254 00^5133 T ■ I SE M IC O N D U C T O R - 3 3 T ■flOTb ' 0 5 TECH N ICA L DATA The RF Line N P N S ilic o n H ig h Frequ ency T ra n sisto r lc = 200 m A HIGH FREQUENCY TRAN SISTO R NPN SILICON . . . d e sign e d for ultra-linear co m m u n ic a tio n s o r instrum entation applications requiring

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Transistors MPQ3798 MPQ3799* PNP Silicon XyLiip Upliil lifl 51 m LrKJ Lrvl PNP ‘Motorola Preferred Device JXLJXl U ill uJ u l l uj uj uj MAXIMUM RATINGS Symbol MPQ379S MPQ3799 Unit C ollector-E m itter Voltage

mp02907

Abstract: MHQ2222 MHQ6002 md918 Transistor QS 100 NPN Transistor MD3725 MHQ2907 MHQ4002A MHQ4013 MHQ4014
Contextual Info: M O T O R O L A SC -CXSTRS/R F> Tb 6367254 MOTOROLA SC D Ê J b3b7aS4 000240^ 5 9 6D 8 2 4 8 9 CXSTRS/R F MHQ4002A M A X IM U M RATINGS Symbol Value Collector-Emitter Voltage VcEO 45 Vdc Collector-Emitter Voltage V ces 70 Vdc Collector-Base Voltage VCBO

NAX 143-1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon High-Frequency Transistor MMBR521LT1 MRF5211LT1 Designed primarily for use in the high-gain, low -noise sm all-signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast

sf 1327

Abstract: tuner LG sf 118 c mmbr521lt1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon H igh-Frequency Transistor MMBR521LT1 MRF5211LT1 Designed prim arily for use in the h ig h -g a in , lo w -n o ise s m a ll-sig n a l amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast

IN5825

Abstract: MJF122 MSD6100 TIP122
Contextual Info: NPN MJF122 SILICON POWER DARLINGTON 6 AMPERES 100 VOLTS 30 WATTS SILICON POWER DARLINGTON FOR ISOLATED PACKAGE APPLICATION .designed for general-purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically

Q62902-B152-F222

Abstract: lg led tv electronic diagram Q62902-B156-F222 Q62902-B155 A671 transistor Q62901-B65 BZW 70/20 Q62901-B62 a5954 Datasheet diode BZW 70-20
Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES SMT-LED-Typenbezeichnungsschema SMT LED type designation system 2nd and 3rd letter for the color of all MULTILED package outlines higher wavelength = first letter, lower wavelength = second and third letter

dc gear motor 24v inductance

Abstract: T511 012 T402-011 G1030 T730-012EL8 ENCODER OPTICAL 5310 pp031 SANMOTION Q T406-012EL8 ST25A
Contextual Info: DC SERVO SYSTEMS T DC SERVO SYSTEMS E ENGLISH Characteristics 1. Equipment precision can be enhanced. ●High-resolution encoder 45,000 P/R can be mounted. PP038 2. Smooth drive is enabled. ●Improved performance with Approx. small-torque ripple 40 improvement

Contextual Info: MOTOROLA O rder this docum ent by BUD44D2/D SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient

SANMOTION R error code

Abstract: SANMOTION Q error code SANMOTION R error code AL 41 SANMOTION Q PA035 SANMOTION ERROR CODE 555 servo tester SANMOTION q error code AL 21 Q2CA18350 SANMOTION
Contextual Info: AC SERVO SYSTEMS Q AC SERVO SYSTEMS FOR 400V E J ENGLISH JAPANESE Reduced time and expence in designing your system. システム構築までの費用と時間が削減できます。 Economic advantage ‥‥Space and wire savings 経済性 省スペース省配線

MPQ3906

Contextual Info: MOTOROLA Order this document by MPQ3906/D SEMICONDUCTOR TECHNICAL DATA Quad Am plifier Switching Transistor MPQ3906 PNP Silicon Motorola Preferred Device [ijfl [ip [ip nil fiol ITI ITI LySJ LrvJ PNP .r y i , x i LÌ! l i i l i l Lil l i l t i l l i i MAXIMUM RATINGS

Q62902-B152-F222

Abstract: Q62902-B156-F222 Q62901-B65 Q62902-B155 a5954 lsp 5502 Q62902-B153-F222 LED LR 3330 Q62901-B62 Q62703-Q2376
Contextual Info: Lumineszenzdioden Light Emitting Diodes SMT-LED SMT-LEDs Package Type Emissionsfarbe Emission color λdom typ. [nm] Farbe der Lichtaustrittsfläche IV Color of light [mcd] emitting area TOPLED LH T674-KM LH T674-L LH T674-M LH T674-LN LS T670-HK LS T670-J

T730-012EL8

Abstract: T511-012EL8 T511T-012 T406-011EL8 T506-012EL8 pp031 T730T-012 T406-012EL8 T720-012 T404-011EL8
Contextual Info: Ê- ,6"Ê-9-/ - 3 Ver. Simplified Setup Process for Optimum Operating Conditions Auto-Tuning Test Function JOG A new auto-tuning algorithm improves system response by providing functions such as inertia identification, 5 autotuning modes, 30 levels of response, and parameter setting

Q62902-B152-F222

Abstract: Q62902-B155 Q62902-B141 LM776 3360D Q62703P5269 Q62902-B152 Q62703Q5109 Q62703-Q5083 T676-P1Q1-1
Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LUMINESZENZDIODEN LIGHT EMITTING DIODES LIGHT EMITTING DIODES Taping of LEDs SMT LED type designation system Gurtung von Lumineszenzdioden All SMT LEDs are available in 8 mm resp. 12 mm tapes. SMT-LED-Typenbezeichnungsschema

Q62902-B152-F222

Abstract: Q62902-B156-F222 Q62901-B65 led verde 5mm P5101 A0324 LY 3360-K Datenblatt lm776 A671 transistor OSRam LSG T676
Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES SMT-LED-Typenbezeichnungsschema SMT LED type designation system Gurtung von Lumineszenzdioden Taping of LEDs Alle SMT-LED werden im 8- bzw. 12-mm Gurt geliefert.

LG 26 lc 51

Contextual Info: ERICSSON ^ PTB 20219 70 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20219 is a class AB, NPN com m on em itter RF power transistor intended for 26 Vdc operation across the 925 to 960 MHz frequency band. It is rated at 70 watts minimum output power for both CW and

Contextual Info: G MM7642043CSG -6/7 LG Semicon Co.,Ltd. 1,048,576 W O R D S x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features T he G M M 7642043C S G is a 2M x 64 bits E D O D ynam ic R A M M O D U L E w hich is assem bled 8 • 168 pins Dual In-L ine Package pieces o f 1M x 16bit E D O D R A M s in 42 pin

MRF857S

Abstract: transistor bd136 MRF857S equivalent 305D-01
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt U H F large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 8 0 0 -9 6 0 MHz.

MRF522

Abstract: MRF524 MRF5211L MARKING H3B MRF521
Contextual Info: I MOTOROLA SC X S T R S / R F 4bE D • b3b72SM QOIHTE? MOTOROLA fi ■ M O T b "P -3 1 - 0 SEMICONDUCTOR TECHNICAL DATA MRF521 IVIRFC 521 M RF522 M RF524 M RF5211L Th e RF Line PIMP S ilic o n H igh-Frequency T ra n sisto rs . . . desig ned p rim arily for use in the high-gam , low -noise sm all-sig n a l am p lifiers for

Motorola 90 31 te 2482

Abstract: Motorola TE 2482
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF0211L The RF Line NPN S ilic o n H igh-Frequency T ra n sisto r SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . - designed p rim a rily fo r use in the hig h -g ain , low -n oise sm a ll-sign a l a m p lifie rs

Contextual Info: # L G Semicon Co.,Ltd. SYNCHRONOUS DYNAMIC RAM Description The GM72V66841DI/DLI is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally

GH17L

Abstract: cx171 GM71C17403B gm71c18163b 8011S GM71C17403 7011s gm71c18163
Contextual Info: GM7lCl6403B/BL LG Semicon Co.,Ltd. 4,194,304 WORDS x 4 BIT CbIOS DYNAMIC RAM Features Description The GM71 C 16403BIBL is the new generation d y n a m i c R A M organized 4,194,304 words x 4 b i t . GM71 C 16403B/BL h a s realized h i g h e r density, higher performance and various functions

Q62901-B65

Abstract: Q62902-B156-F222 Q62902-B152-F222 A671 transistor Datasheet diode BZW 70-20 LW T67C-S2U1-35 Q62703-Q6351 LM776 din standard 5480 Q62703-P4699
Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES 58 Wavelength λdomtyp. 645 nm 633 nm 628 nm 617 nm 606 nm 590 nm 587 nm 570 nm 560 nm 528 nm 505 nm 470 nm 465 nm Viewing Angle (typ.) 30 … 70 degrees 40 … 80 degrees > 80 degrees > 80 degrees > 80 degrees Die Technology