LG 48A Search Results

Contextual Info: APT30M70BVR A dvanced P o w er Te c h n o l o g y 300V 48A 0.070Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: A dvanced APT30M70BVR pow er Te c h n o lo g y 300V 48A 0.070Í2 POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

SMLG170CA

Abstract: SMLJ11A SMLJ100A SMLJ90A SMLJ17A SMLJ26A SMLJ170A SMLJ6.0A SMLJ12A SMLJ14A
Contextual Info: Microsemi Corp. The diode experts SANTA A N A , CA SC O T T SD A L E , A Z For more information call: 602 941-6300 SM L SERIES 5 .0 thru 1 7 0 .0 Volts 3 0 0 0 WATTS FEA TU RES UNIDIRECTIONAL AND BIDIRECTIONAL SURFACE MOUNT • UN ID IRECTIONAL AND BIDIRECTIONAL

thyristor st 103

Abstract: MARK EAA
Contextual Info: SM12 G,J 48,USM12(G,J)48,SM12(G,J)48A,USM 12(G,J)48A T O SH IB A TOSHIBA BI-DIRECTIONAL TRIDE THYRISTOR SILICON PLANAR TYPE SM12G48, USM12G48, SM12J48, USM12J48 SM12G48A, USM12G48A, SM12J48A, USM12J48A AC • • • POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage

1653A

Abstract: N029RH12 tn029r N029RH
Contextual Info: Technical Publication WESTCODE $ SEMICONDUCTORS TN029R Issue 2 July 1985 Convertor Grade Stud-Base Thyristor Type N029R 30 am peres average: up to 1 500 volts V rrm Ratings Maximum values at 125°C Tj unless stated otherwise SYMBOL RATING CONDITIONS Average on-state current

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

N023RH12

Abstract: tN023 595a2 OOQ214Q N023RH hawk TN023R
Contextual Info: WESTCODE S EMI C O N D U CT O R S B'ìE » • TT DR RSS QOOSIB? 3 MlilESB Technical Publication WESTCODE 0 SEMICONDUCTORS TN023R Issue 2 July 1985 X — z Convertor Grade Stud-Base Thyristor Type N023R 2 3 a m p e r e s a v e r a g e : u p t o 1 5 0 0 v o l t s V rrm

SM16J

Contextual Info: T O SH IB A SM16 G,J 48,USM16(G,J)48,SM16(G,J)48A,USM 16(G,J)48A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16G48, USM16G48, SM16J48, USM16J48 SM16G48A, USM16G48A, SM16J48A, USM16J48A AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage : V d r m = 400, 600V

Contextual Info: T O SH IBA S M 16 G,J 48,USM 16(G,J)48,SM 16(G,J)48A,USM 16(G,J)48A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16G48, USM16G48, SM16J48, USM16J48 SM 16G48A, USM 16G48A, SM16J48A, USM16J48A AC PO W ER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage : Vj)R]y[ = 400, 600V

Contextual Info: T O SH IB A SM8 G,J 48,USM8(G,J)48,SM8(G/J)48A,USM8(G,J)48A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8G48, USM8G48, SM8J48, USM8J48 SM8G48A, USM8G48A, SM8J48A, USM8J48A AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage : Vqrm ;= 400, 600V

bus48

Abstract: t335 motorola bus48
Contextual Info: "Tb MO TOR OLA SC ÍXSTRS/ R Fi 6367254 MOTOROLA SC DE |b3t.75S4 00Û073S 96D <XSTRS/R F 80735 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE II* SERIES NPN SILICON POWER TRANSISTORS 15 A M P E R E S NPN SILICON POWER TRAN SISTO RS 400 and 450 VOLTS BVCEO)

DIODE marking EG 83A

Contextual Info: 05062 VSB06P05LCI Only One Name Means ProTek’Tion high powered VSIP tvs array Description The VSB06P05LCI is a high powered, low capacitance TVS array available in a 6 pin VSIP package. This device is designed to protect telecommunications equipment from the damaging effects of ESD, EFT and secondary transient

Contextual Info: 05062 VSB06P05LCI Only One Name Means ProTek’Tion high powered VSIP tvs array Description The VSB06P05LCI is a high powered, low capacitance TVS array available in a 6 pin VSIP package. This device is designed to protect telecommunications equipment from the damaging effects of ESD, EFT and secondary transient

vsb06p

Abstract: VSB06P05LCI lg 83a
Contextual Info: 05062 VSB06P05LCI Only One Name Means ProTek’Tion high powered VSIP tvs array Description The VSB06P05LCI is a high powered, low capacitance TVS array available in a 6 pin VSIP package. This device is designed to protect telecommunications equipment from the damaging effects of ESD, EFT and secondary transient

Contextual Info: 05080 PLC03-6 Only One Name Means ProTek’Tion HIGH POWER steering diode/TVS ARRAY Description The PLC03-6 is a low capacitance, high powered steering diode/ TVS array available in a SO-8 package. This device is designed to protect high speed data line applications from the damaging effects of ESD, EFT and secondary transient

PLC03-6

Abstract: abd marking code
Contextual Info: 05080 PLC03-6 Only One Name Means ProTek’Tion HIGH POWER steering diode/TVS ARRAY Description The PLC03-6 is a low capacitance, high powered steering diode/ TVS array available in a SO-8 package. This device is designed to protect high speed data line applications from the damaging effects of ESD, EFT and secondary transient

Contextual Info: 05080 PLC03-6 Only One Name Means ProTek’Tion HIGH POWER steering diode/TVS ARRAY Description The PLC03-6 is a low capacitance, high powered steering diode/ TVS array available in a SO-8 package. This device is designed to protect high speed data line applications from the damaging effects of ESD, EFT and secondary transient

transistor 3405 motorola

Abstract: bux48a equivalent bux48 equivalent transistor 3405 npn
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850-1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed (or high-voltage, high-speed,

PLC03-6

Abstract: Ethernet
Contextual Info: 05080 PLC03-6 Only One Name Means ProTek’Tion HIGH POWER steering diode/TVS ARRAY Description The PLC03-6 is a low capacitance, high powered steering diode/ TVS array available in a SO-8 package. This device is designed to protect high speed data line applications from the damaging effects of ESD, EFT and secondary transient

Contextual Info: 05080 PLC03-6 Only One Name Means ProTek’Tion HIGH POWER steering diode/TVS ARRAY Description The PLC03-6 is a low capacitance, high powered steering diode/ TVS array available in a SO-8 package. This device is designed to protect high speed data line applications from the damaging effects of ESD, EFT and secondary transient

Ethernet

Abstract: PLC01-6
Contextual Info: 05071 PLC01-6 Only One Name Means ProTek’Tion high powered MULTI-LINE low capacitance TVS ARRAY Description The PLC01-6 is a high powered multi-line low capacitance transient voltage suppressor array that provides board level protection for Bellcore 1089, standard TTL and CMOS bus line applications against the damaging effects of ESD,

PLC01-6

Contextual Info: 05071 PLC01-6 Only One Name Means ProTek’Tion high powered MULTI-LINE low capacitance TVS ARRAY Description The PLC01-6 is a high powered multi-line low capacitance transient voltage suppressor array that provides board level protection for Bellcore 1089, standard TTL and CMOS bus line applications against the damaging effects of ESD,

t056

Abstract: 2N2016 2N2016 JAN 2N2015 2n20 US ARMY TRANSISTOR
Contextual Info: MIL SPECS I C 0000125 0001340 E | INCH-POUND N OTICE OF VALIDATION M I L - S - 1 9 5 0 0 / 2 4 8 A (ER NOTICE 1 29 A u g u s t 1988 MI L I T A R Y S P E C I F I C A T I ON SHEET TRANSISTOR, NPN, SIL I C O N TYPES 2N2015, 2N2016 M i l i t a r y specification M I L - S - 1 9 5 0 0 / 2 4 8 A ( E R ) , d a t e d 10 A pril 1963,

N029RH12

Abstract: 1653A jetion tn029r 1174A2 Westcode thyristor
Contextual Info: lilESTCODE SEMICONDUCTORS 3 TE D TTO ^S 0002141 5 I ÜJESB T -2. r - f 7 Technical WESTCODE SEMICONDUCTORS Publication TN029R Issue 2 July 1985 Convertor Grade Stud-Base Thyristor Type N029R 30 amperes average: up to 1500 volts V r r m Ratings Maximum values at 125°C Tj unless stated otherwise