LG DIODE 932 Search Results

DIN 933

Abstract: GDML 3011 LED 24 RG LG diode 831 GDME 311 228-G1 GDML GDML 211 GDML 2011 GE1 G gdml 2011 DIN 43650-A
Contextual Info: GDM Series DIN 43650-A/ISO 4400 Cable socket, self-assembly Product description • in appliances and equipment subject to vibrations, e.g. track-bound vehicles, building machinery, conveying systems, using the crimp connection method GDMC Further information

Contextual Info: DEVELOPMENT DATA BTV160DV SERIES This data sheet contains advance information and _are subject to change without notice. n 'a m e r p h i l i p s /d i s c r e t e ObE D • ’bbS3*i31 O O i n D S S ■ FAST GATE TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODE

TA49018

Abstract: RFP50N06 50A60V f1s50n06
Contextual Info: RFG50N06, RFP50N06, RF1S50N06SM in te rd i J u ly 1999 D nta S h e e t F ile N u m b e r Features 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

Contextual Info: HAT3008R Silicon N-Channel / P-Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-536B 3rd. Edition Features • Low on-resistance • Capable o f 4 V gate drive • Low drive current • High density mounting Outline S O P -8 7 8 D D 5 6 D D

LB 123T

Abstract: ccd sensor pin diagram 9325
Contextual Info: CCD Area Image Sensor MN37181FT 6 mm type-1/3 410k pixel Hyper-D CCD • Overview The hyper-D CCD is a CCD area image sensor featuring an ultra-wide dynamic range that far surpasses anything achieved by the competition. It has 1/3-type 410k pixels. The CCD can read the following two types of signals at

927801765

Abstract: HIRSCHMANN DIN 43650 4 pin 927801144 gdm hirschmann 14 A Hirschmann 4 pin connector hirschmann GDME gssna Hirschmann connector 4 pin HIRSCHMANN DIN 43650 4-pin GSSR 300
Contextual Info: Hirschmann INDUSTRIAL CONNECTORS GDM Connectors to DIN 43650 Form A Three and four pole industrial power connectors, made to DIN 43650 specifications. Screw or crimp style wire attachment with rubber compression gland offers protection against dust and

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

910T

Abstract: 1030T 141T 159T L486
Contextual Info: CCD Area Image Sensor MN37181FT 6 mm type-1/3 410k pixel Hyper-D CCD • Overview Part Number Size ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur

Contextual Info: DG300A, DG301A DG302A, DG303A ff! HARRIS S E M I C O N D U C T O R TTL Compatible CMOS Analog Switches D ecem ber 1993 Features Description • L o w P o w e r C o n s u m p tio n The DG300A through DG303A family of monolithic C M OS switches are truly compatible second source of the original man­

transistor WLM

Abstract: transistor st 932
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhan ce m e n t m ode standard level fie ld -e ffe ct pow er tran sisto r in a plastic envelope using ’tre n c h ’ technology. T h e device

Contextual Info: CCD Area Image Sensor MN37181FT 6 mm type-1/3 410k pixel Hyper-D CCD • Overview Part Number Size MN37181FT 6mm(type-1/3) ■ Features ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma

GTO philips

Abstract: lg diode 923 Philips gto M1475 IEC134 gto 5A M2739 gate turn-off diode 935 lg lg diode 932
Contextual Info: DEVELOPMENT DATA T his data sheet contains advance information and are subiect to change w ithout notice. N AMER PH ILI P S/ DI S CR ET E BTV160DV SERIES GbE D 1^53^31 DDinOS FAST GATE TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODE S T -0 S T -/7 Fast gate tu rn -o ff thyristors w ith anti-parallel connected fast soft-recovery diodes in ISOTOP. They

MTA4N60E

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTA4N60E Fully Isolated TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 600 VOLTS RDS on = 1-20 OHM

3n120e

Abstract: mtp3n
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP3N120E T M O S E -FE T P o w er Field E ffe c t T ran sisto r M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d h ig h - v o lt a g e T M O S E - F E T is d e s ig n e d to

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

IN4744

Abstract: Ferroxcube 846XT250-3C8 EC52-3C8 768XT188-3E2A 846XT250-3C8 Ferroxcube 3C8 EC-52-3C8 magnetic core ferroxcube 3E2A 2616PA250-3B7 P4404
Contextual Info: CS3842AAN/D Single CS3842A Provides Control for 500 W/200 kHz Current-Mode Power Supply http://onsemi.com APPLICATION NOTE INTRODUCTION In current mode control, CMC the control signal represents the peak inductor current and forms a second loop in the circuit (Figure 1). The advantages of current mode

Contextual Info: RF1K49224 33 3.5A and 2.5A, 30V, 0.060 and 0.150 Ohms, Complementary LittleFET Power MOSFET June 1997 Features Description • 3.5A, 30V N-Channel 2.5A, 30V (P-Channel) • Peak Current vs Pulse Width Curve The RF1K49224 com plem entary power MOSFET is

TLP721

Abstract: TLP721F 11-5B2 E67349 VDE0884 74285
Contextual Info: TOSHIBA TLP721 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP721 OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY "n4 n33 The TOSHIBA TLP721 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic

E67349

Abstract: TLP733 TLP734 VDE0884
Contextual Info: T O S H IB A TLP733JLP734 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP733, TLP734 OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING PO W ER SUPPLY The TOSHIBA TLP733 and TLP734 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a

Contextual Info: MOTOROLA Order this document by MTP3N120E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP3 N 120E TMOS E-FET Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS

E67349

Abstract: TLP733 TLP734 VDE0884
Contextual Info: TLP733JLP734 TOSHIBA TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY TLP733, TLP734 The TOSHIBA TLP733 and TLP734 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in :

TLP721

Abstract: TLP721F tlp721 photocoupler 11-5B2 E67349 VDE0884
Contextual Info: TO SH IBA TLP721 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP721 OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY Unit in mm The TOSHIBA TLP721 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic

Contextual Info: CSD86330Q3D SLPS264C – OCTOBER 2010 – REVISED OCTOBER 2011 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • The CSD86330Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high

Contextual Info: CSD86350Q5D SLPS223E – MAY 2010 – REVISED OCTOBER 2011 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • • • • • • The CSD86350Q5D NexFET™ power block is an optimized design for synchronous buck applications