LG IC 621 Search Results

LG IC 621 Result Highlights (5)

Part	Manufacturer	Description
74HC4053FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
7UL2T125FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
7UL2T126FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
74HC4051FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
7UL1G07FU	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC

LG IC 621 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
LG 631 TV LG Abstract: 5N5OUT Tv tuner Diagram LG RF tuner LG lg innotek tuner LG 631 IC fm radio pcb LG Innotek tv lg LG 631 Text: LG Innotek Multi Media Tuner NTSC M/N JPN & FM Radio 2004/03/08 Preliminary specification TAPE-H091F 1 LG Innotek Preliminary specification Multi Media Tuner NTSC M/N(JPN) & FM Radio TAPE-H091F FEATURES Systems NTSC M/N(JPN) & FM Radio Stereo True 5V device (low power dissipation)	Original	PDF	TAPE-H091F 25MHz) LG 631 TV LG 5N5OUT Tv tuner Diagram LG RF tuner LG lg innotek tuner LG 631 IC fm radio pcb LG Innotek tv lg LG 631
Untitled Abstract: No abstract text available Text: GMM7324200ANS/SG-6/7/8 LG Semicon Co.,Ltd. Description Features The G M M 7324200A N S /S G is a 4M x 32 bits D ynam ic R A M M O D U L E w hich is assem bled 8 pieces o f 4M x 4bits D R A M s in 24/26 pin SO J package on both sides the printed circuit board	OCR Scan	PDF	GMM7324200ANS/SG-6/7/8 324200A GMM7324200ANS/SG
2SC16 Abstract: No abstract text available Text: 2 S C 1 6 2 1 , 2 S C 1 621 R High Speed Switching NPN Silicon Epitaxial Transistor PACKAGE DIMENSIONS • High speed switching: t on=12ns TYP., t,tg= 7.0ns TYP., to ff = 18ns TYP. in m illim eters inchest 2 5 -g 1 • Low collector saturation voltage: V cE (satl = 0.13V TYP.	OCR Scan	PDF	2SC1621 2SC1621R 2SC16
IN916 Abstract: MM3736 MM3737 Text: Mil/13736, MM3737 NPN SILICON ANNULAR SILICON MEMORY DRIVER NPN SILICON MEMORY DRIVER TRANSISTOR . . . designed for 1 Am pere, high-speed switching applications such as ferrite core memory and hammer drivers. • Collector-Em itter Breakdown Voltage —	OCR Scan	PDF	MM3736, MM3737 MM3736 10mAdc Tj-25Â IN916 IN916 MM3736 MM3737
2SA1621 Abstract: 2SC4210 A1621 Text: 2SA1621 TO SH IBA 2 S A 1 621 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS + 0.5 • • High hpE • hpE = 100~320 Complementary to 2SC4210 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage	OCR Scan	PDF	2SA1621 2SC4210 O-236MOD SC-59 2SA1621 A1621
LT 3401 Abstract: lts3401 Text: LITEM Î I LTS-3400L SERIES 0.8" SINGLE DIGIT NUMERIC LED DISPLAYS FEATURES • 0 .8 IN C H 2 0 32 m m D IG IT H E IG H T • C O N T IN U O U S U N IF O R M S E G M E N T S • C H O IC E OF F IV E B R IG H T C O L O R S -R E D /B R IG H T R E D /G R E E N /Y E L L O W /O R A N G E	OCR Scan	PDF	LTS-3400L LT 3401 lts3401
7472 ci Abstract: IC 4407 2SC5091 ic 1496 specifications Text: TOSHIBA 2SC5091 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5091 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , \|S2le\|2= 7dB f=lG H z Unit in mm M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	PDF	2SC5091 -j250 7472 ci IC 4407 2SC5091 ic 1496 specifications
1RF620 Abstract: No abstract text available Text: • 4302571 0054013 HARRIS lib ■ HAS IR F 620/6 21/6 2 2/6 2 3 IRF62 OR/621R /622R /623R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B • 4.0A and 5.0A, 150V - 200V T O P VIE W • fDS on = O.Bii and 1.20 • Single Pulse Avalanche Energy Rated*	OCR Scan	PDF	IRF62 OR/621R /622R /623R IRF620, IRF621, IRF622, IRF623 IRF620R, IRF621R, 1RF620
MPS6513 Abstract: LG IC 621 MPS65 MPS6514 MPS6515 MPS6517 MPS6519 6515 transistor 5bti T2721 Text: MPS6513 MPS6514 MPS65Ì5_ PHILIPS 7 1 1 0 ô 2 t 0 0 4 2 4 ^ 0 323 « P H I N INTERNATIONAL AMPLIFIER TRANSISTOR T - 2 7 - Z / General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 to MPS6519. QUICK REFERENCE DA TA MPS6513	OCR Scan	PDF	MPS6513 MPS6514 MPS65Ã 711002t T-27-Z/ MPS6517 MPS6519. NECC-C-002 LG IC 621 MPS65 MPS6515 MPS6519 6515 transistor 5bti T2721
3866S Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM	OCR Scan	PDF
U430 Abstract: No abstract text available Text: SSMA C O N N E C T O R S HERMETICALLY SEALED SPARK PLUG g e n e r a l d e s ig n s p e c if ic a t io n s Interface Dimensions: VSWR, maximum: Frequency Range: Insertion Loss, dB maximum: Nominal Impedance; Voltage Rating, maximum VRMS: RF Leakage, dB minimum:	OCR Scan	PDF
BSR40 Abstract: BSR41 BSR42 BSR43 Text: N AMER PHILIPS/DISCRETE OLE D bbS3T31 QD1ST72 M I BSR40 to 43 T " 2 S '- / 5 " SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in miniature plastic envelopes intended for application in thick and thin-film circuits. They are intended for use in telephony and general industrial applications.	OCR Scan	PDF	QD1ST72 BSR40 BSR40 BSR41 BSR42 BSR43 100mA BSR43
catalogue des transistors bipolaires de puissance Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91 Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM	OCR Scan	PDF
smd npn 2n2222 Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200 Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.	OCR Scan	PDF	2PC1815L 2PC1815 10xx0. 7Z88986 smd npn 2n2222 bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200

PH13002 Abstract: transistor 13002 13002 npn H 13003 13002 tr 13002 PH13003 Text: N AMER P H I L I P S / D I S C R E T E 25E D • bbSBTBl G D I T I M I I ,I 3 ■ PH13002 PH13003 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-126 envelope, intended for use in switching regulators, inverters, motor control, solenoid/relay drivers and deflection circuits.	OCR Scan	PDF	PH13002 PH13003 T-33-07 O-126 PH13002 O-126. PH130O3 transistor 13002 13002 npn H 13003 13002 tr 13002 PH13003
f9414 Abstract: fairchild 1P F9414-4 Text: F9414 4-Chip Data Encryption Set FAIRCHILD A S chlum berger C om pany M ic ro p ro c e s s o r P ro d u ct Description The F a irc h ild F9414 4-C hip D a ta E n c ry p tio n S et c o n s is ts o f fo u r s im ila r 40-pin P L- LSI d e v ic e s the 9414-1,	OCR Scan	PDF	F9414 40-pin FiPS-46) 56-bit fairchild 1P F9414-4
BF989 Abstract: SS MARKING CODE mosfet marking code gg Text: 71 1 0 0 2 b OübfibTb fc,b2 H P H I N BF989 J V_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T 1 4 3 microminiature envelope with source and substrate interconnected. This M O S -F E T tetrode is intended for use in u.h.f. applications in television	OCR Scan	PDF	711002b BF989 OT143 20/iA BF989 SS MARKING CODE mosfet marking code gg
Germanium drift transistor Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor Text: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of	OCR Scan	PDF	orporation/464 CH-8105 Germanium drift transistor 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
PCB 99 94v-0 Abstract: No abstract text available Text: Part Details for P/N: 2-382408-3 Page 1 o f 2 f AU JLII f J â f l P [ENGLISH] FRANÇAIS PH' RETl/Jtll T ffiP. SHOPPING CO ART1I Cliiiiitetfc \| DEUTSCH j ITALIA NO HMfiOL \| B ^ f f I 4 ^ ^ Y2K - OK Contact your Sales Engineer or call AMP Customer Service at 1-800-522-6752 for production quantity orders. Click for	OCR Scan	PDF
23824093 Abstract: No abstract text available Text: Part Details for P/N: 2-382409-3 _ ' A H I 3 [ENGLISH] ! FRANÇAIS Page 1 o f 2 C eiiîîtatt \| DEUTSCH \| ITALIANO j ESMflOL \| B ^ II ^ I Y2K - OK 2 -3 8 2 4 0 9 -3 — l o f i products Active W «J S153SSEI IC Sockets DIP Sockets Please use Customer Drawing or CAD file for design activity; line art and other	OCR Scan	PDF
TIP117 Abstract: TIP115 Text: PNP EPITAXIAL SILICON DARLINGTON TRAN SISTO R TIP115/116/117 HIGH DC CURRENT GAIN MIN hFE=1000 @ V c e = -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP110/111/112	OCR Scan	PDF	TIP115/116/117 TIP110/111/112 TIP115 TSP116 TIP117 TIP116 TIP115K16/117 TIP115
IRF 4310 Abstract: ir 4310 IRF621R Text: J2 H A R R IS IR F 620/621/6 2 2 /6 2 3 IR F620R /621R /622R /623R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 2 0 A B TOP VIEW • 4.0A and 5.0A, 1S0V - 200V • •-D S o n = 0 . 8 0 a n d 1 . 2 f l DRAIN (FLANGE)	OCR Scan	PDF	F620R /621R /622R /623R IRF620, IRF621, IRF622, IRF623 IRF620R, IRF621R, IRF 4310 ir 4310 IRF621R
ku 602 vc Abstract: opa 2143 Text: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R -B R O W N OPA621 AVAILABLE IN DIE Wideband Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW NOISE: 2.3nV/ /fiz • LOW NOISE PREAMPLIFIER • LOW DIFFERENTIAL GAIN/PHASE ERROR	OCR Scan	PDF	OPA621 150mA 500MHz 100jiV OPA621 QC5150 17313bS 0024b27 0D24bEÖ ku 602 vc opa 2143
information applikation mikroelektronik Abstract: information applikation C520D mikroelektronik Heft mikroelektronik Heft 12 VQB71 Mikroelektronik Information Applikation VQE23 applikation heft Applikation Information Text: m O N in s ie la t K Information Applikation t a n a r il* INFORMATION APPLIKATION MIKROELEKTRONIK Heft 14: C 520 D 3-Digit-Analog/Digital-Wandler <?> veb H alb le ite rw e rk franlcfurt o d e r lejtb etrieb im veb kombinat mikroelektronik K A M M E R DER T E C H N I K	OCR Scan	PDF

LG IC 621 Search Results

LG IC 621 Result Highlights (5)

LG IC 621 Datasheets Context Search

LG 631 TV LG

Untitled

2SC16

IN916

2SA1621

LT 3401

7472 ci

1RF620

MPS6513

3866S

U430

BSR40

catalogue des transistors bipolaires de puissance

smd npn 2n2222

PH13002

f9414

BF989

Germanium drift transistor

PCB 99 94v-0

23824093

TIP117

IRF 4310

ku 602 vc

information applikation mikroelektronik