LG R50 Search Results

an17 c33

Abstract: CON50 VG96 B9451 lg r50
Contextual Info: 6 7 D1 C D2 LG T679-CO green Pin11 JP2c UARTA945/0 D3 C43 10nF Pin60 JP1a UARTA340/0 N1 D4 LG T679-CO green Pin9 Pin81 P04 JP4 Reset UART A/B D6 MCUVCC LG T679-CO green AVCC Default: closed D7 LG T679-CO green Subclk C17 22pF C18 1µ GND D8 LG T679-CO green

MAX3232CSE

Abstract: TS1117CW-adj in6 16a TLE6250GV33 sot245 AMIS30663 lg r40 RXD TXD MP3 PIN36 LTC1326CS8
Contextual Info: 1 2 3 4 5 6 7 8 Pin[1.64] C43 10nF JP27, JP28 default 1-2 Pin56 P32 D3 12 9 11 10 SOT2 N1 D4 Pin57 P33 LG T679-CO green GND JP27 Pin10 6 JP1 C4 100nF 15 LG T679-CO green D5 Pin58 P34 D6 LG T679-CO green D7 LG T679-CO green JP4 Reset UART A/B Default: open

MB96F350

Abstract: MAX3232CSE SOT-24 680r Lg R40 PIN32
Contextual Info: 1 2 3 4 5 6 7 8 Pin[1.64] D4 Pin57 P33 6 JP1 C4 100nF 15 LG T679-CO green D5 Pin58 P34 D6 LG T679-CO green D7 LG T679-CO green JP4 Reset UART A/B Default: open 1k socketed D8 1 C8 100nF 3 Pin34 JP6 UART B SIN3 Pin35 JP8 UART B SOT3 12 9 11 10 VCC 6 10k

LG L29K

Contextual Info: SmartLED LG L890 Nicht für Neuentwicklungen - wird durch LG L29K ersetzt werden Not for new designs - will be replaced by LG_L29K Vorläufige Daten - Preliminary Data Besondere Merkmale Features • Gehäusetyp: SMT Gehäuse SCD 80, farbloser diffuser Verguss

Contextual Info: SmartLEDTM LG L890 Besondere Merkmale Features • Gehäusetyp: SMT Gehäuse SCD 80 • Besonderheit des Bauteils: kleinste Bauform 1,7 mm x 0,8 mm x 0,65 mm LxBxH • Wellenlänge: 570 nm • Abstrahlwinkel: extrem breite Abstrahlcharakteristik (160°)

MARKING LG

Contextual Info: SmartLEDTM LG L890 Besondere Merkmale Features • Gehäusetyp: SMT Gehäuse SCD 80 • Besonderheit des Bauteils: kleinste Bauform 1,7 mm x 0,8 mm x 0,65 mm LxBxH • Wellenlänge: 570 nm • Abstrahlwinkel: extrem breite Abstrahlcharakteristik (160°)

Contextual Info: SmartLEDTM LG L890 Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: SMT Gehäuse SCD 80 • Besonderheit des Bauteils: kleinste Bauform 1,7 mm x 0,8 mm x 0,65 mm LxBxH • Wellenlänge: 570 nm • Abstrahlwinkel: extrem breite

Contextual Info: SmartLEDTM LG L890 Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: SMT Gehäuse SCD 80 • Besonderheit des Bauteils: kleinste Bauform 1,7 mm x 0,8 mm x 0,65 mm LxBxH • Wellenlänge: 570 nm • Abstrahlwinkel: extrem breite

Contextual Info: SmartLEDTM LG L890 Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: SMT Gehäuse SCD 80 • Besonderheit des Bauteils: kleinste Bauform 1,7 mm x 0,8 mm x 0,65 mm LxBxH • Wellenlänge: 570 nm • Abstrahlwinkel: extrem breite

Contextual Info: SmartLEDTM LG L890 Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: SMT Gehäuse SCD 80 • Besonderheit des Bauteils: kleinste Bauform 1,7 mm x 0,8 mm x 0,65 mm LxBxH • Wellenlänge: 570 nm • Abstrahlwinkel: extrem breite

LG L29K

Contextual Info: SmartLED LG L890 Abgekündigt nach OS-PD-2005-003 Obsolete acc. to OS-PD-2005-003 Vorläufige Daten - Preliminary Data Besondere Merkmale Features • Gehäusetyp: SMT Gehäuse SCD 80, farbloser diffuser Verguss • Besonderheit des Bauteils: kleinste Bauform

LG L29K

Contextual Info: SmartLED LG L890 Abgekündigt nach OS-PD-2005-003 Obsolete acc. to OS-PD-2005-003 Vorläufige Daten - Preliminary Data Besondere Merkmale Features • Gehäusetyp: SMT Gehäuse SCD 80, farbloser diffuser Verguss • Besonderheit des Bauteils: kleinste Bauform

lg tv 29" circuits diagrams

Abstract: marking code ADH OA81 GMS800 GMS800 INSTRUCTION 27c256 intel Analog devices marking 8F lg tv led driver circuit diagram marking code R66 SEMICON INC
Contextual Info: LG Semicon 8-bit Microcontrollers GMS81604/08 Revision History Rev 1.2 Dec. 1998 Redraw package dimension on page 5~6. Rev 1.1 (Nov. 1998) Operating Voltage, 2.7~5.5V is extended with 2.4~5.5V. Operating Temperature, -20~80°C is extended with -20~85°C.

Contextual Info: LG Semicon 3. I/O PORTS There are 7-ports R0~R6 in this device. This ports are double-functional ports and the function can be selected by program. The direction of ports is determined by Port Direction Register.(1=output, 0=input) The data that is written on the programmed output pin is stored in the port data register and is transferred to the

130001 power transistor

Abstract: fet D412 D400 npn transistor q406 transistor C495 transistor FBL-00 q902 transistor TRANSISTOR D412 1L400 TRANSISTOR D400
Contextual Info: Pi Factors Report Page 1 of 63 SortBy: PartType/PN/RefDes Date: 4/5/2007 2:00 PM RelCalc for Windows, Version 5.0-BELL6 Release 2000.1 Company: Lambda Americas DOC: LZSA1000.CIR RECORDS: 321 DESCRIPTION: LZSA1000 ENV: GB TEMP: 40.00 C CF: 1.00000 MODEL: Serial

D 304X transistor

Abstract: Transistor Q 8050 intel 8050 heart ear clip pulse monitor pelco D 304X HP01650-63203 OMF386 HP16700 heart pulse ear
Contextual Info: IDT Logic Analyzers Logic Analyzers Section 4 107 Logic Analyzers Corelis PI-304X, PI-305X, PI-307X, PI-308X, PI-R5000 Preprocessors for use with the HP 16500 and HP 1660 family of Logic Analyzers Features ◆ Description Compatible with IDT RC30xx, RC4xxx, RC323xx, RC644xx,

Contextual Info: LMH6518 www.ti.com SNOSB21C – MAY 2008 – REVISED JULY 2013 LMH6518 900 MHz, Digitally Controlled, Variable Gain Amplifier Check for Samples: LMH6518 FEATURES DESCRIPTION • • • The LMH6518 is a digitally controlled variable gain amplifier whose total gain can be varied from −1.16

L6518SQ

Abstract: L6518S
Contextual Info: LMH6518 www.ti.com SNOSB21B – MAY 2008 – REVISED MARCH 2013 LMH6518 900 MHz, Digitally Controlled, Variable Gain Amplifier Check for Samples: LMH6518 FEATURES DESCRIPTION • • • The LMH6518 is a digitally controlled variable gain amplifier whose total gain can be varied from −1.16

Contextual Info: LMH6518 www.ti.com SNOSB21B – MAY 2008 – REVISED MARCH 2013 LMH6518 900 MHz, Digitally Controlled, Variable Gain Amplifier Check for Samples: LMH6518 FEATURES DESCRIPTION • • • The LMH6518 is a digitally controlled variable gain amplifier whose total gain can be varied from −1.16

MWT270SP

Contextual Info: MwT- 2 26 GHz High Power GaAs FET MicroWave Technology r60* 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES r50i 'A /ù \ i I • • +24.5 DBM OUTPUT POWER AT 12 GHZ /A \ *-7BJ 'W * 1- 1 6 Î- 1 l • 9 DB SMALL SIGNAL GAIN AT 12 GHZ

BLI80

Contextual Info: MICROWAVE TECHNOLOGY bbE D • blEMlDO G 0D D2 30 3GM ■ MRIilV MwT - 2 26 GHz High Power GaAs FET MicroWave Technology r5th 4268 Solar Way Fremont, CA 94538 510-651-6700 F A X 510-651-2208 FEATURES r50* • +24.5 DBM OUTPUT POWER AT 12 GHZ _^A\ /Av_ Î .

STK-O84

Abstract: STK086 STK-086 STK-084 STK084 STK-085 STK-085-105 STK085-105 stk 086 STK 085
Contextual Info: Features I O IMST,'l Channelby 2 PowerSupply. ! AF Output Power STK-084:50 Wmin. STK-085-1os:60 Wmin. S T K - 0 8 67 : 0 Wmin. r Capable of setting protector for load shorting and tone contfoller. MAXIMUM RATINGSI Ta=25"C srK-oe4 t]T;|tu srK-086 r50 155 155

MAX3232CSE

Abstract: MB96F350 TLE7259 MB96F AMIS30663 D9 female JP32 PCA82C250 RXD TXD MP3 MB96F3
Contextual Info: D C B GND Pin24 Pin27 Pin30 Pin33 Pin36 Pin39 Pin42 Pin56 Pin59 Pin16 Pin53 Pin9 Pin12 Pin15 Pin63 Pin5 Pin8 VPin19 VPin20 Pin21 Pin45 MCUVCC GND Pin44 2 4 1 D15 1N4002 D19 C-Pin X16 C22 22pF C16 22pF 2 Q1 4MHZ Default: 1-4 C40 47µF/25V VBat C61 4,7µ Pin47

MAX3232CSE

Abstract: PCA82C250 in6 16a 3.gnd 7.vcc dip-8 TXD RXD RXD TXD MP3 D9 female JP32 LTC1326CS8
Contextual Info: D C B GND Pin24 Pin27 Pin30 Pin33 Pin36 Pin39 Pin42 Pin56 Pin59 Pin16 Pin53 Pin9 Pin12 Pin15 Pin63 Pin5 Pin8 VPin19 VPin20 Pin21 Pin45 MCUVCC GND Pin44 2 4 1 D15 1N4002 D19 C-Pin X16 C22 22pF C16 22pF 2 Q1 4MHZ Default: 1-4 C40 47µF/25V VBat C61 4,7µ Pin47