LH 473 Search Results

capacitor cd294

Abstract: capacitor cd294 160v LH 473
Contextual Info: ALUMINUM ELECTROLYTIC CAPACITOR CD294 LH LH FEATURE : 105 1000 Life time:105 1000 hours Smaller size Ideally suited for switching power supplies , telecommunication and other electronic products SPECIFICATIONS Item Performance Characteristics 10V.DC Rated Working Voltage Range

100 MF 450 WV CAPACITOR

Abstract: capacitor cd294 CD294 2501MD capacitor snap in 450V 105 350 MF 450 V CAPACITOR 30X30 3300 mf capacitor 100v CD295 vent capacitor
Contextual Info: LH General purpose with snap - in terminal series Top safely vent construction Ideally suited for switching power supplies,telecommunication and other electronic products SPECIFICATIONS Item Performance Characteristics 10V.DC 100V.DC Rated Working Voltage Range

PJO 399

Contextual Info: S19227PBI11 RUBICON-LH ADVANCE Datasheet with DispersionXX Revision 2.15 October 4, 2005 AMCC - PROPRIETARY AND CONFIDENTIAL RESTRICTED DISTRIBUTION NDA REQUIRED AMCC - Confidential and Proprietary Dear customer, Thank you for choosing an AMCC device. We appreciate your confidence in our products.

470 uH inductors

Abstract: 12 uh 3A inductors 0 273 101 021 1r5 tube
Contextual Info: INDUCTORS TECHNOLOGY OF TOMORROW FERRITE CORE RADIAL CHOKE COILS LH • RLH RLH LHB LHC STRUCTURE 1 2 3 4 5 6 Ferrite bobbin core Winding wire Lead wire Adhesive Solder joint Coating Products with Pb-free terminations meet RoHS requirements TYPE DESIGNATION HOW TO ORDER

2SD 4206

Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
Contextual Info: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)

Infineon ITS 7166

Abstract: f0035 a1 f0035 cat c15 ecm F0041 QuadFALC errata FCC68 PUB43802 PUB62411 TR62411
Contextual Info: Y R A IN LI M E ICs for Communications R E1/T1/J1 Framer and Line Interface Component for Long and Short Haul Applications FALC -LH P PEB 2255 Version 1.3 Preliminary Data Sheet 05.99 DS 1 • PEB 2255 PRELIMINARY Revision History: Current Version: 05.99

TRANSISTOR SMD 613

Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
Contextual Info: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)

Contextual Info: W m a E PM50RSA060 K Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 In tB lH fF IO d M o d l l l o Three Phase + Brake IGBT Inverter Output 50 Amperes/600 Volts 1. V upc 11. W p 2. UFo 12.VWW 3. U p 4. V upi 5. V vpc

Lariteck

Abstract: F9232 STR 61001 EASY2254 T60403-L5032-X017 smd PULSE TRANSFORMER ST5141 T60403-L4021 bv ei 301 2107 MD 5408
Contextual Info: 6, 0(16 ,&V IRU &RPPXQLFDWLRQV Framing and Line Interface Component for PCM 30 and PCM 24   FALC 54 and FALC -LH PEB 2254 PEB 2255 Preliminary transformer recommendation Application Note 10.98 Q@7Ã!!$$ Sr‰v†v‚ÃCv†‡‚…’à 8ˆ……r‡ÃWr…†v‚Ã)Ã

Contextual Info: $$/& 6HULDO 3520 ,&Π%$& 'LH 6SHFLILFDWLRQ 6KHHW 7KLV GLH VSHFLILFDWLRQ VKHHW VXSSRUWV WKH $$ DQG /& 6HULDO (3520 GHYLFHV PDQXIDFWXUHG IURP 0LFURFKLS PDVN VHW %$& 5HY % RQ DQ LQFK ZDIHU 7KH ERQGRXW GLDJUDP LJXUH  VKRZV WKH SDG RULHQ

dq15d

Contextual Info: EDO Mode, x16 2ÜÂ3 Device Tim ing Diagram C M O S DRAM TIMING DIAGRAM WORD READ CYCLE NOTE : D in = OPE N RAS UCAS V lL V lH LCAS W V lL OE DQO - DQ7 Vo« V ol DQ8 - DQ15 VcH - VcL - tííííl Don,t Care 463 ELECTRONICS EDO Mode, x16 (2ÜÄ3) Device Tim ing Diagram

Contextual Info: Timing Chart 9 Read Cycle tRC tflAS RAS CAS V ih- W- \ I tCSH tA S R j V lH - VlL- Irai Use ÏRAH Î cah *— I W&E2 Col. tR C H , tRCS WÉ VlH- V.u- X. tCAS VlH- tHAO A ddress tn p tRRH ///////////, tAA tCAC tCLZ V ohV ol- Hi-Z Data out Hi-Z 471 Early W rite Cycle

Contextual Info: REV. DATE DESCRIPTION NC 0 2 / 0 8 / 0 0 I'' O CD LH □□ NI O a 3 T INITIAL RELEASE 2.42 [.095]-c- - Í • i d - -—U o e. o lO o 1- 1 i— i DO r CT> CD o CM o *— DO F" ro co o o LT> O o in a r>. o CVJ lo r-S IN - 1 ■3.00 [.118] 12.60 [.496]

Contextual Info: SM F-06140200 ELECTRO NICS Sam sung M icrow ave S em iconductor G s ill O p t Ì lH Ì Z G C l G aAs FET 2-14 GHz Description Features The S M F-06 140-200 is a packaged version of the SM F06100-200. The chip is a 600 |im n-channei M E S F E T with 0.5 nm gate length, utilizing Sam sung M icrowave’s gain

Contextual Info: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2013. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.

Contextual Info: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2012. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.

CAL45

Contextual Info: 당사제품에 관한 주의사항 당사제품을 사용하실 경우에는 사전에 반드시 읽어 주십시오. 주의사항 • 당 소프트웨어의 기재 내용은 2009년10월 현재의 것입니다. 기재 내용의 개선등을 위해 예고없이 변경할 수 가 있습니다. 따라

IR 333J

Abstract: LH 036 L06B CAL 45 102K LHL08 CAL45 45VB
Contextual Info: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2009. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.

CAL45TB100K

Abstract: CAL45 Inductor LHLC08 102J LHLC08
Contextual Info: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2010. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.

CAL45TB101K

Abstract: CAL 3300 CAL45 ms-620 LC-1010
Contextual Info: 有关本公司产品的注意事项 请务必在使用本公司产品目录之前阅读。 注意事项 • 本软件中记载的内容是2009年10月现在的内容。本产品目录记载的内容由于产品的改良等原因发生变更时，恕不另行

LhL08

Abstract: LHL10 LHL08681K hp4263A
Contextual Info: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2011. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.

Contextual Info: m u EDI2CG272128V 2 Megabyte Sync/Sync Burst, Small Outline DIMM \ ELECTRONIC DESIGNS. IN C ADVANCED 2x128Kx72, 3.3V Module Features • Sync/Sync Burst Flow-Through 2x128K x72 Synchronous, S ynchronous Burst The EDI2CG272128VxxD1 is a S ynchronous/S ynchro­

Contextual Info: ^EDI EEH2AG27265V 1Megabyte Sync/Sync Burst, ^ ^ ^ ^ S m a ll Outline DIMM •ELECTRONIC DESI SMS, INC ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through • 2x64kx72 Synchronous, Synchronous Burst ■ Flow-Through Architecture • Sequential Burst MODE

se617

Abstract: SE641 transistor f423 sd667 transistor hh 004 transistor f422 bv0T F423 n010x L442
Contextual Info: Block Library CMOS-9HD Family, EA-9HD Family CMOS Gate Array, CMOS Embedded Array Ver.6.0 Document No. Date Published A13052EJ6V0BL00 6th edition December 2000 NS CP(K) NEC Corporation 1997 Printed in Japan [MEMO] Block Library A13052EJ6V0BL Summary of Contents