LH532400D Search Results

LH532400D Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
LH532400D		Sharp	CMOS 24M(3M x 8) Mask-Programmable ROM		Original	PDF	52.63KB	6

LH532400D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
42-PIN Contextual Info: CMOS 2 4 M 3 M x 8 MROM FEATURES PIN CONNECTIONS • 3,145,728 x 8 bit organization 42-PIN DIP TOP VIEW • Access time: 150 ns (MAX.) • Supply current: -O p e ra tin g : 65 mA (MAX.) -S ta n d b y : 100[iA(M AX.) • TTL compatible I/O • Three-state output	OCR Scan	42-PIN 42-pin, 600-mil 42DIP H532400 DIP42-P-600) LH532400D	PDF
41C1000 Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258	OCR Scan	41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A	PDF
41C464 Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100 Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page	OCR Scan	41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100	PDF
K93C46 Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256 Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257	OCR Scan	416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256	PDF
TC55B8128 Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256 Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6	OCR Scan	TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256	PDF
Contextual Info: CMOS 24 M 3M 8 MROM PIN CONNECTIONS FEATURES • 3,145,728 x x 8 bit organization 4 2 -P IN D IP T O P • Access time: 150 ns (MAX.) • Supply current: - Operating: 65 mA (MAX.) -S ta n d b y : 10 0 \|iA (M A X .) • TTL compatible I/O • Three-state output	OCR Scan	42-pin, 600-mil LH5324000 42DIP DIP042-P-0600) LH532400 DIP42-P-600) LH532400D	PDF
42-PIN Abstract: LH532400 LH5324000 LH532400D Contextual Info: LH5324000 FEATURES CMOS 24M 3M x 8 MROM PIN CONNECTIONS • 3,145,728 × 8 bit organization • Access time: 150 ns (MAX.) • Supply current: – Operating: 65 mA (MAX.) – Standby: 100 µA (MAX.) • TTL compatible I/O • Three-state output • Single +5 V Power supply	Original	LH5324000 42-pin, 600-mil 42-PIN 42DIP DIP042-P-0600) LH532400 LH532400 LH5324000 LH532400D	PDF