LIGHT EMITTING DIODES APPLICATIONS Search Results

AVERAGE QUASI PEAK AND PEAK DETECTOR

Abstract: nixie tube circuit
Contextual Info: • PRODUCT EMITTING DIODES LIGHT EMITTING DIODES APPLICATION NOTES Among photo semiconductor devices, the light emitting diode only exists as a P-N junction

datasheet light emitting diode

Abstract: Light emitting Diodes light emitting diode 13B1 Chapter CHAPTER 2
Contextual Info: Copyright 2005, Sharp Electronics Corp. All Rights Reserved. Chapter 2 – Use of Visible Light Emitting Diodes 2-1 Chapter 2 – Use of Visible Light Emitting Diodes 2-2 Chapter 2 – Use of Visible Light Emitting Diodes 2-3 Chapter 2 – Use of Visible Light Emitting Diodes

Q62902-B152-F222

Abstract: Q62902-B156-F222 Q62901-B65 led verde 5mm P5101 A0324 LY 3360-K Datenblatt lm776 A671 transistor OSRam LSG T676
Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES SMT-LED-Typenbezeichnungsschema SMT LED type designation system Gurtung von Lumineszenzdioden Taping of LEDs Alle SMT-LED werden im 8- bzw. 12-mm Gurt geliefert.

Q62902-B152-F222

Abstract: Q62902-B155 Q62902-B141 LM776 3360D Q62703P5269 Q62902-B152 Q62703Q5109 Q62703-Q5083 T676-P1Q1-1
Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LUMINESZENZDIODEN LIGHT EMITTING DIODES LIGHT EMITTING DIODES Taping of LEDs SMT LED type designation system Gurtung von Lumineszenzdioden All SMT LEDs are available in 8 mm resp. 12 mm tapes. SMT-LED-Typenbezeichnungsschema

Q62902-B152-F222

Abstract: lg led tv electronic diagram Q62902-B156-F222 Q62902-B155 A671 transistor Q62901-B65 BZW 70/20 Q62901-B62 a5954 Datasheet diode BZW 70-20
Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES SMT-LED-Typenbezeichnungsschema SMT LED type designation system 2nd and 3rd letter for the color of all MULTILED package outlines higher wavelength = first letter, lower wavelength = second and third letter

Contextual Info: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such

IR LED and photodiode pair long distance

Contextual Info: ]-:2RXHP-27-34 LIGHT EMITTING DIODES PRODUCT OVERVIEW 1. FEATURES AND FIELDS OF APPLICATION 1-1 Features of Light Emitting Diodes Since light emitting diodes are photo semiconductor devices, they have the following features. 1 (2) (3) (4) (5) (6) Long life; vibration and shock proof

l943

Contextual Info: SOLID STATE D I V I S I O N Selection Guide Feb. 2012 LED Wide variations of Light Emitting Diodes to match various applications LIGHT EMITTING DIODES LED HAMAMATSU offers a broad lineup of light emitters such as high-power, near infrared LED. HAMAMATSU LEDs

gardasoft

Abstract: indium gallium arsenide phosphide UV-LED 680nm 475nm photocontrol 320nm power led 530nm PP500 Orange605nm
Contextual Info: Light Emitting Diodes - A Primer Russ Dahl, Opto Diode Corporation From the Web Exclusive, "Seeing the True Colors of LEDs." Light emitting diodes LEDs are semiconductors that convert electrical energy into light energy. The color of the emitted light depends on the semiconductor material

po102

Abstract: LN59 LNA2702L
Contextual Info: Infrared Light Emitting Diodes LN59, LNA2702L GaAs Bi-directional Infrared Light Emitting Diodes LN59 Unit : mm 4.0±0.2 Not soldered For light source of VCR VHS System 1.8±0.2 Two-way directivity 15.3±1.0 High-power output, high-efficiency : PO = 1.8 mW (min.)

oslon ssl 150

Abstract: JESD22-A114-D osram LED of oslon OSLUX JESD22-A114D osram LED catalogue sideled OSRAM OSRAM LUW LUW CQDP-LQLS-M8MI osram topled
Contextual Info: OSRAM Opto Semiconductors - Product Catalog Home www.osram-os.com search Product Catalog Discontinuation Documents LED Light Emitting Diodes TOPLED Power TOPLED Advanced Power TOPLED Home / LED (Light Emitting Diodes) / OSLON / OSLON SSL / 150°-Linse / LUW CQDP (EQW)

LN59

Abstract: LN59L LNA2702L photo sensor
Contextual Info: Infrared Light Emitting Diodes LN59, LNA2702L LN59L GaAs Bi-directional Infrared Light Emitting Diodes LN59 Unit : mm 4.0±0.2 Not soldered For light source of VCR (VHS System) 1.8±0.2 Two-way directivity 15.3±1.0 High-power output, high-efficiency : PO = 1.8 mW (min.)

LN172

Contextual Info: Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm ø4.2 +0.2 –0.1 Features High-power output, high-efficiency : PO = 12 mW typ. Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) 2.4±0.3 12.7 min.

gallium phosphide band structure

Abstract: silicon carbide LED Zinc sulfide Sic led light emitting diode siemens monocrystalline efficiency Siemens LED visible light 35p0 siemens sic leds design
Contextual Info: Blue Light Emitting SiliconCarbide Diodes—Materials, Technology, Characteristics Appnote 31 by Dr. Claus Wyrich Siemens Research Laboratories Munich, Germany Introduction Light-emitting diodes LEDs are widely used in the field of electronics as indicator lamps and seven-segment displays

LN189S

Contextual Info: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical

LN189L

Contextual Info: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical

GaAs 850 nm Infrared Emitting Diode

Abstract: LN151F LN151L LNA2402L LNA2403F
Contextual Info: Infrared Light Emitting Diodes LNA2402L LN151L , LNA2403F (LN151F) LNA2402L Unit: mm φ4.6±0.15 12.7 min. GaAs Infrared Light Emitting Diodes 6.3±0.3 Glass lens For optical control systems 2-φ0.45±0.05 2.54±0.25 Forward current IF 100 mA Pulse forward current *

LN51F

Abstract: LN51L
Contextual Info: Infrared Light Emitting Diodes LN51F, LN51L Unit : mm LN51F ø4.6±0.15 4.5±0.2 GaAs Infrared Light Emitting Diodes Glass window 12.7 min. For optical control systems Features 2-ø0.45±0.05 High-power output, high-efficiency : PO = 6 mW typ. 2.54±0.25

Contextual Info: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm

S 205T

Contextual Info: SEC LIGHT EMITTING DIODES ELECTRON DEVICE SG205D,SG205T GaP LIGHT EM ITTIN G DIODE GREEN -N EPO C SERIES— DESCRIPTION The SG 205D, SG 205T are Gap Gallium Phosphide Light Emitting Diodes which are mounted on the lead frames and molded in green diffused, green clear plastic respectively. They are ideally suited for front panel indicator applications.

Contextual Info: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 3.75±0.3 • Features 12.5 min. • High-power output, high-efficiency: PO = 3.5 mW typ. • Infrared light emission close to monochromatic light:

LN162S

Contextual Info: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm ø3.0±0.15 3.75±0.3 2.0±0.2 For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW typ. 12.5 min. Infrared light emission close to monochromatic light :

LN69

Contextual Info: Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode Unit : mm Emitted light spectrum suited for silicon photodetectors : λP = 940 nm typ. Good radiant power output linearity with respect to input current Long lifetime, high reliability

LN151F

Abstract: LN151L LNA2402L LNA2403F
Contextual Info: Infrared Light Emitting Diodes LNA2403F Unit : mm 4.6 0.15 Glass window 4.5 0.2 LNA2403F, LNA2402L LN151F, LN151L 12.7 min. GaAs Infrared Light Emitting Diodes For optical control systems Features 2- 0.45 0.05 2.54 0.25 1. High-power output, high-efficiency : PO = 7.5 mW (typ.)