LIST OF P CHANNEL POWER MOSFET Search Results

TDA7569B

Contextual Info: TDA7569BDLVPD 4 x 50 W differential power amplifier with full I2C diagnostics, high efficiency and low voltage operation Datasheet  production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ Differential input

Contextual Info: TDA75610LV 4 x 45 W power amplifier with full I2C diagnostics, high efficiency and low voltage operation Datasheet  production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ High efficiency class SB

TDA7563PD

Abstract: TDA7563PDTR
Contextual Info: TDA7563PD Multifunction quad power amplifier with built-in diagnostics features Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ Non switching high efficiency ■ High output power capability 4x28W/4Ω @ 14.4V, 1kHz, 10% THD, 4x40W EIAJ

BS250KL

Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
Contextual Info: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

Siliconix mosfet guide

Abstract: list of P channel power mosfet Siliconix Selection Guide Si147DH Si1471DH 1206-8 chipfet layout P-channel power mosfet SO-8 power selector guide SiA513DJ Si1065X
Contextual Info: N & P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

TDA7569B

Contextual Info: TDA7569BLV 4 x 50 W power amplifier with full I2C diagnostics, high efficiency and low voltage operation Datasheet  production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ Class SB high efficiency ■

QPL-19500

Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
Contextual Info: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits

gs 069

Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
Contextual Info: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

2N6898 JANTX

Abstract: 2N6898 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500
Contextual Info: Standard Power MOSFETs File Number 2N6898 1876 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A, -1 0 0 V rDs on : 0.20 Cl TERMINAL DIAGRAM Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds

2N6901 JANTX

Abstract: 2N6901 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2n6800 2N6897 JANTXV 2N6897
Contextual Info: Logic-Level Power MOSFETs File Number 2N6901 1877 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 1.4 fi Feature*: • Design optimized for 5-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits ■ Compatible with automotive drive requirements

2N6758

Abstract: 2N6902 QPL-19500
Contextual Info: Logic-Level Power MOSFETs File Number 2N6902 1878 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 12 A, 100 V rDs(on): 0.2 fi N-CHANNEL. ENHANCEMENT MODE Features: • Design optimized for 5 volt gate drive • Can be driven directly from Q-MOS,

mosfet 2n6788

Abstract: 2n6800 2N6788 LH0063 QPL-19500 2N6792 JANTXV 2N6788 JANTXV
Contextual Info: Standard Power MOSFETs 2N6788 File Number 1593 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE o 6.0A, 100V rDs on = 0.30 Ü Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds

j350 TRANSISTOR

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHT1006N Rev. 0, 5/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET RF power transistor suitable for industrial heating applications from 728 to 2700 MHz. Device is capable of both CW and pulse operation.

2N6792 JANTX

Abstract: 2N6792 2n6800 C055 LH0063 QPL-19500 2N6904
Contextual Info: Standard Power MOSFETs File N u m be r 1901 2N6792 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 2 A, 400V T oS lon = 1 80 N-CHANNEL ENHANCEMENT MODE D Features: • SOA is power-dissipation limited m Nanosecond switching speeds

TDA7562

Contextual Info: TDA7562B 4 x 46 W multifunction quad power amplifier with built-in diagnostics features Features • MOSFET output power stage ■ High output power capability 4 x 25 W/4  @ 14.4 V, 1 kHz, 10 % THD ■ Max. output power 4 x 68 W/2 , 4 x 42 W/4 

2N6155

Abstract: 2n6156 qpl-19500 2N6756 2N6901 D-05N md-141 2N6755 2N67 2N6756 JANTX
Contextual Info: Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 6 0 V -1 0 0 V rDs on = 0.18 fi and 0.25 fl Features: • SOA is power-dissipation limited

2N6782

Abstract: 2n6800 LH0063 QPL-19500
Contextual Info: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds

Contextual Info: TDA7563B 4 x 50 W multifunction quad power amplifier with built-in diagnostics feature Datasheet  production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output '!0'03 '!0'03 '!0'03 ■ New high efficiency class SB

TDA75610

Abstract: TDA75610LV TDA75610LVP TDA75610LVPDTR TDA7561 4x25W k734 car woofer amplifier circuit diagram Power-SO36 tda75610lv
Contextual Info: TDA75610LV 4 x 45 W power amplifier with full I2C diagnostics, high efficiency and low voltage operation Datasheet − production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ High efficiency class SB

TDA7576

Contextual Info: TDA7576B Dual bridge MOSFET power amplifier for 24 V systems Datasheet  production data Features • Multipower BCD technology ■ 24 V battery operation ■ MOSFET output power stage ■ High output power capability – 2 x 20 W/4  @ 24 V, 1 kHz; 10 %

TDA7576B

Abstract: TDA7576 mosfet power amplifier
Contextual Info: TDA7576B Dual bridge MOSFET power amplifier for 24 V systems Datasheet − production data Features • Multipower BCD technology ■ 24 V battery operation ■ MOSFET output power stage ■ High output power capability – 2 x 20 W/4 Ω @ 24 V, 1 kHz; 10 %

TDA7576B

Abstract: TDA7576
Contextual Info: TDA7576B Dual bridge MOSFET power amplifier for 24 V systems Datasheet − production data Features • Multipower BCD technology ■ 24 V battery operation ■ MOSFET output power stage ■ High output power capability – 2 x 20 W/4 Ω @ 24 V, 1 kHz; 10 %

2N6851

Abstract: 2N6851 JANTX 2n6800
Contextual Info: Rugged Power MOSFETs 2N6851 File N u m be r 2218 Avalanche-Energy-Rated P-Channel Power MOSFETs -4.0A, and -200V I ds on = 0.80Q TERMINAL DIAGRAM Features: • S in g le p u lse a v a la n ch e e n e rg y ra te d m S O A is p o w e r-d is s ip a tio n lim ite d

a new zvs pwm full bridge converter with reduced

Abstract: AN-7536 AN2626 STW20NM60 STW20NM60FD report P channel MOSFET list of P channel power mosfet Welding topologies
Contextual Info: AN2626 Application note MOSFET body diode recovery mechanism in a phase-shifted ZVS full bridge DC/DC converter Introduction The ZVS exploits the parasitic circuit elements to guarantee zero voltage across the switching device before turn on, eliminating hence any power losses due to the