LITTON SYSTEMS Search Results

Contextual Info: LITTON IND/LITTON SOLID SbE ]> • 5S44SDD 0GDG524 275 ■ LITT Litton LF6872 Solid State 1/4 W att, Low Distortion GaAs FET PRELIMINARY SPECIFICATIONS FEATURES ■ +24 dBm Typical Output Power @ 18GHz ■ 6 dB Typical Compressed Gain @ 18GHz ■ Low 2nd Harmonic Distortion

Contextual Info: 4 • V 11 J. IM J/ / L. ± I LITTON IND/LITTON SOLID l_ X Litton SbE » ■ SSM42GD □□□□SGb SST « L I T T Low Noise/M edium Power M icrow ave GaAs FET Electron Devices D-2501 Preliminary Specifications FEATURES ■ Noise Figure 2.2 dB @ 8 ghz ■ Gain a t NF 9.0dB @ 8 g h z

Contextual Info: LITTON IND/LITTON SOLID Litton 5bE D WÊ SS442DD □□□□SED b2T « L I T T Low-Distortion/Medium Power M icrowave GaAs FET Electron Devices D-6828 Preliminary Specifications FEATURES • O utput Power 19 dBm @ 18 GHz ■ 1dB Power Gain 7 dB @ 18 g h z

Contextual Info: SLE T> LITTON IND/LITTON SOLI] Litton • SS442GD DDDGS1D 7ÖG ■ L I T T Low N oise/M edium Power M icrow ave GaAs FET Electron Devices D-2503 Preliminary Specifications FEATURES ■ Noise Figure 3.5 ■ Gain a t NF 6.5 ■ 0.50 X 280 um Ti/Pt/Au G ate

transistor af18

Abstract: litton Litton Solid State D-2503 Solid State Microwave C band FET transistor s-parameters
Contextual Info: LITTON IND/LITTON SOLI] Litton SLE ]> • 55M42DD ODOGS1Q 7fiD ■ L I T T Low Noise/M edium Power M icrow ave GaAs FET Electron Devices D-2503 Preliminary Specifications 440 FEATURES 280 ■ Noise Figure 3.5 ■ Gain a t NF 6.5 dB @ 18 g h z 94 dB @ Y77

Contextual Info: LITTON IND/LITTON SOLID SbE » 5S4M20D D0GGS3D 5 7 e] Litton IL IT T 7 - J 7 -P 5 - LF3830 1 Watt Power GaAs FET Solid State FEATURES • + 31.5 dBm Typical Output Power @ 8 GHz • 7 dB Typical Compressed Gain @ 8 GHz • 0.5 Micron Ti/Pt/Au Recessed Gate

litton

Abstract: Litton Solid State transistor 2501 D2501 Litton Systems 250-1 MAG D-2501 RF FET TRANSISTOR 3 GHZ VDS35 55M4S
Contextual Info: J— X ' V il X 1 H J / / L 1 I LITTON IND/LITTON SOLI] Litton Electron Devices SbE D m 55ML42GD □□ODSDb 55T • L I T T Low Noise/Medium Power Microwave GaAs FET D-2501 Preliminary Specifications FEATURES ■ Noise Figure 2.2 dB @ 8 ghz ■ Gain at NF 9.0dB @ 8 g h z

Contextual Info: LITTON IND/LITTON SOLID Litton SbE D 554M200 D D D D S m 32b « L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3501 Preliminary Specifications FEATURES - • O utput Power 23 dBm @ 8 g h z ■ - UM. 50 ^DRAIN 1/ / / / / / / / / / 7T///7 ///////7 7 7 7 7 1

Contextual Info: LITTON IND/LITTON SOLID SbE D • S£L»4EOO DQ0G533 Sflfl ■ L I T T Hton_ LF3850 Solid State 2 Watt Power GaAs FET PRELIMINARY SPECIFICATIONS FEATURES ■ +33 dBm Typical Output Power @ 8GHz ■ 6 dB Typical Compressed Gain @ 8GHz -

litton

Abstract: Litton Solid State
Contextual Info: LITTON IND/LITTON SOLID Litton SbE D SSMMSDD O D O O S m 32b • L ITT Medium Power M icrow ave GaAs FET Electron Devices D-3501 Preliminary Specifications FEATURES -62070 h ■ O utput Power 23 dBm @ 8 g h z ■ 7-7 i r i DRA IN 1/ / / / / / / / / / 7 7 7 / / / / / / / / / / / / / / / I

Litton LN-200

Contextual Info: LITTON IND/LITTON SOLID Litton SbE D • 5S44E00 00DDS2Ö RIO ■ L I T T Dual G a te M icrow ave GaAs FET Electron Devices D-2730 Preliminary Specifications FEATURES MAG 16 d B 18 GHz - Noise Figure 2.5 dB @ 45 18 Ghz » - 430 50- t 45 t 50 Gain at NF 13 dB @ 18 Ghz

Contextual Info: LITTON IND/LITTON SOLID Litton SbE D • 5544200 0000522 4T2 ■ L I T T Low -D isto rtion /M ed iu m Pow er M ic ro w a v e G a A s FET Electron Devices D-6836 Preliminary Specifications FEATURES @ 18 g h z ■ O utput Power 21 ■ IdB Power Gain 6.5 dB @ 18 GHz

MIL-C-28859

Abstract: Litton Systems winchester electronics litton litton 400X
Contextual Info: TEST REPORT 470 TES1 REPORT COMMERCIAL "C" PRESS CONTACTS IN MULTILAYER BOARD PER MIL-C-28859 WINCHESTER ELECTRONICS DIVISION OF LITTON SYSTEM, INC. MAIN STREET & HILLSIDE AVE. OAKVILLE, CT. 06779 T E S T REPORT 47 0 SIGNATURE FOR: WINCHESTER ELECTRONICS DIVISION LITTON SYSTEMS, INC

Contextual Info: LITTON IND/LITTON SOLID, 5bE D ton • 5544200 0000510 T71 * L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3814 Preliminary Specifications FEATURES ■ Output Power 28 dBm @ 8 ghz ■ 1dB Power Gain 9 dB @ 8 g h z ■ 0.5 x 1400 nm Ti/Pt/Au G ate Two Cells

S3V 82

Contextual Info: LITTON IND/LITTON SOLID SLE D • 55M42D0 0DDD52b 04fl « L I T T Ultra Low-Noise M icrowave GaAs FET D-0777 Electron Devices Preliminary Specifications 440 FEATURES 280 ■ Noise Figure 1.9 d B @ < 46 18 g h z ► Y77Ä ■ Gain a t NF 8 dB @ 18 GHz ' /}; ; ; ///A

TRANSISTOR A107

Contextual Info: LITTON IND/LITTON SOLID Linon SbE D • 5S4M200 DG0DS12 553 « L I T T Dual Gate Microwave GaAs FET Electron Devices D-2704 Preliminary Specifications FEATURES ■ MAG 18 dB @ 8 GHz ■ Noise Figure 2 .5 dB @ 8 Ghz ■ Gain at NF 13 dB @ 8 Ghz ■ Mixer, Switch, AGC, and Temperature

D2502

Abstract: transistor A6t 75 250-2 MAG TH408 D-2502
Contextual Info: Linon h i- a i i V in JIND/LITTON .N J // L IT LITTON SOLID SbE D • 5 5 4 4 20 0 00 00 50 Ö OSE ■ LITT Low N oise/M edium Power M icrow ave GaAs FET Electron Devices D-2502 Preliminary Specifications -380- FEATURES ■ -25040 Noise Figure 2.2 dB @ 8 ■

Diode LT 9250

Abstract: LT 9250 0/Diode LT 9250
Contextual Info: LITTON IND/LITTON SOLI» SbE D • SSMMSDG OODDSOG Ö31 ■ L I T T 7 - Ö / - Ö GALLIUM ARSENIDE CW IMPATT DIODES 9250 Series • • • • 5-21 GHz High C W Output Power High Efficiency— Typically 1 8 -2 0 % Burnout Resistant to Circuit Mismatches High Reliability— Greater than 106 hrs M TTF

litton 800-336-2112

Abstract: litton litton poly
Contextual Info: www.litton-ps.com Litton Poly-Scientific Singlemode Fiber Optic Switch FO5935 APPLICATIONS • Optical network switching • Optical network protection • Optical network restoration • Configurable add/drop • Transmission equipment protection • Network test access

litton cpu

Abstract: MX 232 military multichip litton military mcm cpu MCP-96 cpu guidance litton mcm military mcm I960 mx
Contextual Info: MILITARY MULTICHIP MODULES LITTON GUIDANCE & CONTROL SYSTEMS i960 MC/MX CPU Computers Using Silicon Substrate MCMs • ■ ■ ■ ■ ■ ■ ■ ■ ■ 10-38 MIPs Microminiaturized Computers With Processor, Memory and I/O in Pin-Compatible Multichip

Litton Electron Devices microwave tubes

Abstract: Litton klystron klystron L-4880B UG344 two cavity klystron reflex klystron klystron pin connection 4880B Litton Electron Devices
Contextual Info: Litton Electron Devices 103S Waîrrmnsrar fîrivê Wiiiflmspnn Pennsylvania 17701 Pnona 717 326-3561 Fax: (717) 326-2903 PRODUCTION SPECIFICATION TYPE L-4880A, B, C, E, F REFLEX KLYSTRON DESCRIPTION Conduction Cooled, Long Life, Low Distortion, Extremely Stable Reflex

sca-2 40 pin connector

Abstract: litton precision sca-2 80 pin connector sca 80 pin connector D-81679 NL-2921 PN-3651 Litton Precision Products sca-2 80 pin box connector 284501012
Contextual Info: a * . Litton Winchester/Retcon A pplications w/vw.litton-wed.com The SCA-2 Connector Single Connector Attachment is an industry standard interface designed to provide a means for directly attaching disk drives to printed circuit boards. W inchester/Retconn offers the market place's most robust

litton CONNECTOR

Abstract: litton litton 800-336-2112 litton poly poly-scientific
Contextual Info: www.litton-ps.com Litton Poly-Scientific Multimode Fiber Optic Switch FO4635 APPLICATIONS • FDDI bypass • Local area network bypass • Optical routing • Loopback diagnostic testing • Ring network protection • Test access FEATURES • Small size 1.25”L X 0.54” W X 0.50” H

frequency division multiplexing circuits

Abstract: litton litton slip ring litton FORJ FORJ litton 800-336-2112 time division multiplexer time division multiplexing WDM Filter spectrum litton poly
Contextual Info: Application Notes Poly-Scientific www.litton-ps.com Fiber Optic Rotary Joints On-Axis and Off-Axis Litton Poly-Scientific manufactures two types of FORJs. A Fiber Optic Rotary Joint FORJ is a device used to pass optical signals from a stationary structure to a rotating mechanism in a fiber optic