litton 800-336-2112
Abstract: litton litton poly
Text: www.litton-ps.com Litton Poly-Scientific Singlemode Fiber Optic Switch FO5935 APPLICATIONS • Optical network switching • Optical network protection • Optical network restoration • Configurable add/drop • Transmission equipment protection • Network test access
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FO5935
FO5935
litton 800-336-2112
litton
litton poly
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litton cpu
Abstract: MX 232 military multichip litton military mcm cpu MCP-96 cpu guidance litton mcm military mcm I960 mx
Text: MILITARY MULTICHIP MODULES LITTON GUIDANCE & CONTROL SYSTEMS i960 MC/MX CPU Computers Using Silicon Substrate MCMs • ■ ■ ■ ■ ■ ■ ■ ■ ■ 10-38 MIPs Microminiaturized Computers With Processor, Memory and I/O in Pin-Compatible Multichip
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MCP96)
MXP-96)
16-Bit
RS-232
MXP-96
MCP-96
litton cpu
MX 232
military multichip
litton
military mcm cpu
cpu guidance
litton mcm
military mcm
I960 mx
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litton CONNECTOR
Abstract: litton litton 800-336-2112 litton poly poly-scientific
Text: www.litton-ps.com Litton Poly-Scientific Multimode Fiber Optic Switch FO4635 APPLICATIONS • FDDI bypass • Local area network bypass • Optical routing • Loopback diagnostic testing • Ring network protection • Test access FEATURES • Small size 1.25”L X 0.54” W X 0.50” H
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FO4635
MSG80027
05/01MULTIMODE
850nm
1300nm
litton CONNECTOR
litton
litton 800-336-2112
litton poly
poly-scientific
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frequency division multiplexing circuits
Abstract: litton litton slip ring litton FORJ FORJ litton 800-336-2112 time division multiplexer time division multiplexing WDM Filter spectrum litton poly
Text: Application Notes Poly-Scientific www.litton-ps.com Fiber Optic Rotary Joints On-Axis and Off-Axis Litton Poly-Scientific manufactures two types of FORJs. A Fiber Optic Rotary Joint FORJ is a device used to pass optical signals from a stationary structure to a rotating mechanism in a fiber optic
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID SbE ]> • 5S44SDD 0GDG524 275 ■ LITT Litton LF6872 Solid State 1/4 W att, Low Distortion GaAs FET PRELIMINARY SPECIFICATIONS FEATURES ■ +24 dBm Typical Output Power @ 18GHz ■ 6 dB Typical Compressed Gain @ 18GHz ■ Low 2nd Harmonic Distortion
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5S44SDD
0GDG524
LF6872
18GHz
LF6872
2285-C
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Untitled
Abstract: No abstract text available
Text: 4 • V 11 J. IM J/ / L. ± I LITTON IND/LITTON SOLID l_ X Litton SbE » ■ SSM42GD □□□□SGb SST « L I T T Low Noise/M edium Power M icrow ave GaAs FET Electron Devices D-2501 Preliminary Specifications FEATURES ■ Noise Figure 2.2 dB @ 8 ghz ■ Gain a t NF 9.0dB @ 8 g h z
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SSM42GD
D-2501
D-2501
2285C
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID Litton 5bE D WÊ SS442DD □□□□SED b2T « L I T T Low-Distortion/Medium Power M icrowave GaAs FET Electron Devices D-6828 Preliminary Specifications FEATURES • O utput Power 19 dBm @ 18 GHz ■ 1dB Power Gain 7 dB @ 18 g h z
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SS442DD
D-6828
D-6828
2285C
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Untitled
Abstract: No abstract text available
Text: SLE T> LITTON IND/LITTON SOLI] Litton • SS442GD DDDGS1D 7ÖG ■ L I T T Low N oise/M edium Power M icrow ave GaAs FET Electron Devices D-2503 Preliminary Specifications FEATURES ■ Noise Figure 3.5 ■ Gain a t NF 6.5 ■ 0.50 X 280 um Ti/Pt/Au G ate
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SS442GD
D-2503
D-2503
2285C
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transistor af18
Abstract: litton Litton Solid State D-2503 Solid State Microwave C band FET transistor s-parameters
Text: LITTON IND/LITTON SOLI] Litton SLE ]> • 55M42DD ODOGS1Q 7fiD ■ L I T T Low Noise/M edium Power M icrow ave GaAs FET Electron Devices D-2503 Preliminary Specifications 440 FEATURES 280 ■ Noise Figure 3.5 ■ Gain a t NF 6.5 dB @ 18 g h z 94 dB @ Y77
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55M42DD
D-2503
D-2503
devices26
2285C
transistor af18
litton
Litton Solid State
Solid State Microwave
C band FET transistor s-parameters
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID SbE » 5S4M20D D0GGS3D 5 7 e] Litton IL IT T 7 - J 7 -P 5 - LF3830 1 Watt Power GaAs FET Solid State FEATURES • + 31.5 dBm Typical Output Power @ 8 GHz • 7 dB Typical Compressed Gain @ 8 GHz • 0.5 Micron Ti/Pt/Au Recessed Gate
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5S4M20D
LF3830
LF3830
8510B
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litton
Abstract: Litton Solid State transistor 2501 D2501 Litton Systems 250-1 MAG D-2501 RF FET TRANSISTOR 3 GHZ VDS35 55M4S
Text: J— X ' V il X 1 H J / / L 1 I LITTON IND/LITTON SOLI] Litton Electron Devices SbE D m 55ML42GD □□ODSDb 55T • L I T T Low Noise/Medium Power Microwave GaAs FET D-2501 Preliminary Specifications FEATURES ■ Noise Figure 2.2 dB @ 8 ghz ■ Gain at NF 9.0dB @ 8 g h z
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SSM42GD
D-2501
I--190-
D-2501
2285C
litton
Litton Solid State
transistor 2501
D2501
Litton Systems
250-1 MAG
RF FET TRANSISTOR 3 GHZ
VDS35
55M4S
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID Litton SbE D 554M200 D D D D S m 32b « L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3501 Preliminary Specifications FEATURES - • O utput Power 23 dBm @ 8 g h z ■ - UM. 50 ^DRAIN 1/ / / / / / / / / / 7T///7 ///////7 7 7 7 7 1
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554M200
D-3501
D-3501
2285C
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID SbE D • S£L»4EOO DQ0G533 Sflfl ■ L I T T Hton_ LF3850 Solid State 2 Watt Power GaAs FET PRELIMINARY SPECIFICATIONS FEATURES ■ +33 dBm Typical Output Power @ 8GHz ■ 6 dB Typical Compressed Gain @ 8GHz -
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DQ0G533
LF3850
2285-C
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litton
Abstract: Litton Solid State
Text: LITTON IND/LITTON SOLID Litton SbE D SSMMSDD O D O O S m 32b • L ITT Medium Power M icrow ave GaAs FET Electron Devices D-3501 Preliminary Specifications FEATURES -62070 h ■ O utput Power 23 dBm @ 8 g h z ■ 7-7 i r i DRA IN 1/ / / / / / / / / / 7 7 7 / / / / / / / / / / / / / / / I
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D-3501
2285C
litton
Litton Solid State
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID Litton SbE D • 5544200 0000522 4T2 ■ L I T T Low -D isto rtion /M ed iu m Pow er M ic ro w a v e G a A s FET Electron Devices D-6836 Preliminary Specifications FEATURES @ 18 g h z ■ O utput Power 21 ■ IdB Power Gain 6.5 dB @ 18 GHz
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D-6836
D-6836
amplifie07
2285C
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MIL-C-28859
Abstract: Litton Systems winchester electronics litton litton 400X
Text: TEST REPORT 470 TES1 REPORT COMMERCIAL "C" PRESS CONTACTS IN MULTILAYER BOARD PER MIL-C-28859 WINCHESTER ELECTRONICS DIVISION OF LITTON SYSTEM, INC. MAIN STREET & HILLSIDE AVE. OAKVILLE, CT. 06779 T E S T REPORT 47 0 SIGNATURE FOR: WINCHESTER ELECTRONICS DIVISION LITTON SYSTEMS, INC
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MIL-C-28859
MIL-C-28859A.
MIL-C-28859A
MIL-C-28859
Litton Systems
winchester electronics litton
litton
400X
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID, 5bE D ton • 5544200 0000510 T71 * L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3814 Preliminary Specifications FEATURES ■ Output Power 28 dBm @ 8 ghz ■ 1dB Power Gain 9 dB @ 8 g h z ■ 0.5 x 1400 nm Ti/Pt/Au G ate Two Cells
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D-3814
D-3814
2285C
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID SbE D 5544200 ODDQMTb SÔD • LITT J Z - ([ ■ GUNN DIODES HIGH FREQUENCY 22 to 110 GHz FEATURES • • • • • • GaAs and InP Devices High Efficiency Low Package Parasitics High Reliability Low FM and AM Noise Good Power and Frequency Stability
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100nsec.
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S3V 82
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID SLE D • 55M42D0 0DDD52b 04fl « L I T T Ultra Low-Noise M icrowave GaAs FET D-0777 Electron Devices Preliminary Specifications 440 FEATURES 280 ■ Noise Figure 1.9 d B @ < 46 18 g h z ► Y77Ä ■ Gain a t NF 8 dB @ 18 GHz ' /}; ; ; ///A
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55M42D0
0DDD52b
D-0777
D-0777
2285C
S3V 82
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TRANSISTOR A107
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID Linon SbE D • 5S4M200 DG0DS12 553 « L I T T Dual Gate Microwave GaAs FET Electron Devices D-2704 Preliminary Specifications FEATURES ■ MAG 18 dB @ 8 GHz ■ Noise Figure 2 .5 dB @ 8 Ghz ■ Gain at NF 13 dB @ 8 Ghz ■ Mixer, Switch, AGC, and Temperature
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5S4M200
DG0DS12
D-2704
340nm
D-2704
2285C
TRANSISTOR A107
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D2502
Abstract: transistor A6t 75 250-2 MAG TH408 D-2502
Text: Linon h i- a i i V in JIND/LITTON .N J // L IT LITTON SOLID SbE D • 5 5 4 4 20 0 00 00 50 Ö OSE ■ LITT Low N oise/M edium Power M icrow ave GaAs FET Electron Devices D-2502 Preliminary Specifications -380- FEATURES ■ -25040 Noise Figure 2.2 dB @ 8 ■
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00D050Ã
D-2502
2285C
D2502
transistor A6t 75
250-2 MAG
TH408
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Diode LT 9250
Abstract: LT 9250 0/Diode LT 9250
Text: LITTON IND/LITTON SOLI» SbE D • SSMMSDG OODDSOG Ö31 ■ L I T T 7 - Ö / - Ö GALLIUM ARSENIDE CW IMPATT DIODES 9250 Series • • • • 5-21 GHz High C W Output Power High Efficiency— Typically 1 8 -2 0 % Burnout Resistant to Circuit Mismatches High Reliability— Greater than 106 hrs M TTF
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-3-48UNC-2A
Diode LT 9250
LT 9250
0/Diode LT 9250
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Litton Electron Devices microwave tubes
Abstract: Litton klystron klystron L-4880B UG344 two cavity klystron reflex klystron klystron pin connection 4880B Litton Electron Devices
Text: Litton Electron Devices 103S Waîrrmnsrar fîrivê Wiiiflmspnn Pennsylvania 17701 Pnona 717 326-3561 Fax: (717) 326-2903 PRODUCTION SPECIFICATION TYPE L-4880A, B, C, E, F REFLEX KLYSTRON DESCRIPTION Conduction Cooled, Long Life, Low Distortion, Extremely Stable Reflex
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L-4880Ã
Litton Electron Devices microwave tubes
Litton klystron
klystron
L-4880B
UG344
two cavity klystron
reflex klystron
klystron pin connection
4880B
Litton Electron Devices
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sca-2 40 pin connector
Abstract: litton precision sca-2 80 pin connector sca 80 pin connector D-81679 NL-2921 PN-3651 Litton Precision Products sca-2 80 pin box connector 284501012
Text: a * . Litton Winchester/Retcon A pplications w/vw.litton-wed.com The SCA-2 Connector Single Connector Attachment is an industry standard interface designed to provide a means for directly attaching disk drives to printed circuit boards. W inchester/Retconn offers the market place's most robust
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D-81679
SCA2WED2000
sca-2 40 pin connector
litton precision
sca-2 80 pin connector
sca 80 pin connector
NL-2921
PN-3651
Litton Precision Products
sca-2 80 pin box connector
284501012
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