LJ MARKING TRANSISTOR SOT23 Search Results

CMBT2369

Abstract: np TRANSISTOR smd SOT23
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

np TRANSISTOR smd SOT23

Abstract: smd transistor marking np CMBT2369
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

XWs transistor

Abstract: xws 03
Contextual Info: SIEMENS BCR 505 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R-|=2.2k£i, R2=10ki2 R HJ LJ Type Marking Ordering Code BCR 505 XWs Pin Configuration Q62702-C2354 1= B Package 2=E 3=C

bf579

Contextual Info: SIEM EN S PNP Silicon RF Transistor BF 579 • For low-distortion, low-noise VHF/UHF amplifier and UHF oscillator applications in TV tuners • Typical collector current 10 mA Type Marking Ordering Code tape and reel BF 579 LJ Q62702-F971 Pin Co nfigural ion

transistor marking hy

Abstract: PHV6 KDu TRANSISTOR 7L SOT23 MARKING QV sot23 7L Marking 990L marking hu sot23 STT3PF20V
Contextual Info: STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET TYPE STT3PF20V • ■ ■ ■ VDSS 9 RDS on W # W # ID 9 9 $ TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE (2.7V) STANDARD OUTLINE FOR EASY

TRANSISTOR SMD MARKING CODE SP

Abstract: smd "code rc" transistor marking code sp TRANSISTOR SMD MARKING CODE X D transistor SMD 520 BSS84 transistor SMD MARKING CODE marking code br SMD transistor marking code SS SOT23 transistor smd transistor 24 sot23
Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS84 PINNING - SOT23 FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. PIN SYMBOL

smd transistor marking 2y

Abstract: m8p smd smd transistor 2y ti m8p smd transistor marking m8p TRANSISTOR SMD 2y smd transistor m8 sot23 marking code m8p transistor marking 2y marking M8p
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN20 FEATURES PINNING - SOT23 • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTION • High-speed switching 1 g gate • No secondary breakdown. 2

transistor 6Cp

Abstract: bc817 6Bp transistor transistor 6bp 6Cp transistor marking 6ap General Purpose Transistors bc817 6Bp bc818 marking code 6Cp
Contextual Info: DISCRETE SEMICONDUCTORS Æm ülnlEET BC817; BC818 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Mar 12 PHILIPS Philips Semiconductors Product specification

Contextual Info: >ki>jxiyki /9-0458; Rev 7/ 9/96 Low-Cost, Micropower, Precision, 3-Terminal, 1.2V Voltage Reference General Description The MAX6120 operates from a supply voltage as low as 2.4V, and initial accuracy is ±1% for the SOT23 pack­ age. Output voltage temperature coefficient is typically

transistor 1fp

Abstract: 1FP transistor BC847 1gp transistor BC848C transistor 1fp 11 BC848 npn general purpose transistors 1gp npn code 1gp
Contextual Info: DISCRETE SEMICONDUCTORS BC846; BC847; BC848 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Mar 12 PHILIPS Philips Semiconductors Product specification

Contextual Info: cP > G en eral v S e m ic o n d u c t o r MMBT2907A Small Signal Transistor PNP % TO-236AB (SOT-23) Mounting Pad Layout I— 0.037 (0.95)— j 0.037 .0 3 (0.95) " i~ r 0.079 (2.0) 0.035 (0.9) t H 0.031 (0.8) Features_ Mechanical Data_

2SC5890

Contextual Info: JEIIZU , Line. C/ 20 STERN AVE. SPRINGFIELD, .NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN RF Transistor 2SC5890 UkSUKIKMUN >"4|^^ • High Gain Bandwidth Product SOT-23-3L package fT = 7.8 GHz TYP. • High power gain and low noise figure ;

Contextual Info: r& T O K O TK716XX LOW DROPOUT VOLTAGE REGULATOR FEATURES APPLICATIONS • Available in ± 2.0 % or ± 1.0 % Output Tolerance ■ Battery Powered Systems ■ Active High On/Off Control ■ Cellular Telephones ■ Very Low Quiescent Current ■ Pagers ■ Very Low Dropout Voltage

BCW31

Abstract: BCW32
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BCW31/32 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Complementary to BCW29/30 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC UNIT SYMBOL RATING Collector-Base Voltage V CBO 30 V

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking

CMPT2222A

Abstract: ja ctb
Contextual Info: Central" Semiconductor Corp. C M P T 2222A NPN SILICON TRANSISTOR DESCRIPTION: T he CENTRAL SE M IC O N D U C T O R CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general pu rpose and

BFT25

Abstract: bft25 transistor
Contextual Info: N AMER P H I L I P S / D I S C R E T E ^53^31 o o ia is i b 'l BSE D J BFT25 T - 3 I -|7 N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope, primarily intended for use in u.h.f. low power amplifiers in thick and thin-film circuits, such as in pocket phones, paging systems, etc. The transistor features

Contextual Info: KSR2110 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=10K£2) • Complement to KSR1110 ABSOLUTE MAXIMUM RATINGS (T a=25°C)

transistor af 178

Abstract: BC807 BC817-16 BC817-25 BC817-40 MC9100
Contextual Info: BC817-16 / -25 / -40 NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features 310 mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary PNP Types Available BC807

ITT DIODE tv

Abstract: ITT DIODE ITT DIODE 60
Contextual Info: BS850 P-Channel Enhancement Mode DMOS Transistor Features - high input impedance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway - no secondary breakdown Pin configuration 1 = Drain, 2 = Gate, 3 = Source

2SB62

Abstract: f50510 TK732xxM
Contextual Info: r& T O K O TK732xx LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Up to 5 A Output Current Capability With External ■ Battery Powered Systems PNP Transistor ■ Cellular/Cordless Telephones ■ Internal Short Circuit Protection ■ Radio Control Systems

47 16S P6

Contextual Info: SEM ICONDUCTOR KRA116S-KRA122S TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A ND DRIVER CIRC U IT A PPLICATIO N L FEA T U RE S lì L DIM • With Built-in Bias Resistors. • Simplify Circuit Design.

Contextual Info: • ^ £ 3 1 3 1 0Q5£bb7 7=12 * A P X N ANER PHILIPS/DISCRETE BSV52 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTORS • High-speed switching N-P-N transistor in a m icrominiature plastic envelope. It is intended fo r very high-speed saturated switching in thick and thin -film circuits.

sot-23 marking 213

Contextual Info: MOTOROLA Order this document by MMBTH24LT1/D SEMICONDUCTOR TECHNICAL DATA M M BTH24LT1 VH F M ixer Transistor NPN Silicon • Motorola Preferred Device COLLECTOR 3 Designed for • f j = 400 MHz Min @ 8 mA EMITTER CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS