LL-BT DIODE Search Results

diode KIV 62

Abstract: DIODE KIV DIODE KIV 4 kiv 49 diode diode KIV 225 KIV* diode vub 70 -16 n01 diode KIV 8 25/85/KIV* diode diode KIV 70
Contextual Info: □IXYS Three Phase Rectifier Bridge VUB 60 with IGBT and Fast Recovery Diode for Braking System V RRM IdA V M 1200-1600 V 70 A n VRRM Type 1 o- V 7 o- 1200 1600 Symbol VUB 6 0 -1 2 N01 VUB 6 0 -1 6 N01 Test Conditions n ii Maximum Ratings 1 2 0 0 /1 6 0 0

Contextual Info: Data Sheet 2.4V to 110V M LL ZEN ER DIODES 1/2 Watt Semiconductor S Mechanical Dimensions Description -K U E W U M S - - 1 for BAND I 1 O1 f* _ M 1 / ( ) o m tu m 0014 (0 4 0 0 •* " ■ ’x '- h m 0 1 4 6 0 .seat <* M , 0191(3.a tT ). D im ensions in in che s

Contextual Info: FAST CMOS 10-BIT BUFFER DESCRIPTION: FEATU RES: - Low input and output leakage <1 |j A max. - Extended commercial range of -40° C to +85° C - CMOS power levels - The FCT827T is built using an advanced dual metal CM O S technology. The FCT827T 10-bit bus drivers provide high-performance bus inter­

Contextual Info: IDT29FCT52AT/BT/CT/DT IDT29FCT2052AT/BT/CT FAST CM OS OCTAL R E G IS T E R E D TRANSCEIVERS FEATURES: • F e a t u r e s fo r F C T 2 9 F C T 2 0 5 2 T : - • C o m m o n features: - - Low input and output leakage <1^iA max. Extended com m ercial range of -4 0 °C to +85°C

D0232

Contextual Info: HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS IDT54/74FCT821AT/BT/CT IDT54/74FCT823AT/BT/CT/DT IDT54/74FCT825AT/BT/CT In te g ra te d D e v ic e T e c h n o lo g y , Inc. FEATURES: DESCRIPTION: • Common features: The FCT82xT series is built using an advanced dual metal

125c74

Contextual Info: FAST CMOS 8-BIT IDT54/74FCT521T/AT/BT/CT IDENTITY COMPARATOR D E S C R IP TIO N : FE A T U R E S : - Std., A, B and C speed grades - Low input and output leakage <1 |j A max. using an advanced dual metal CMOS technology. These devices compare - Extended commercial range of -40° C to +85° C

51BL

Abstract: 51BL 8
Contextual Info: FAST CMOS 16-BIT REGISTERED TRANSCEIVER FEATURES: • Common features: - 0.5 MICRON CM O S Technology - High-speed, low-power CMOS replacement for ABT functions Typical tSK o (Output Skew) < 25Ops Low input and output leakage < 1[.iA (max.) - ESD > 2000V per M IL-STD-883, Method 3015;

IDT74FCT841

Contextual Info: FAST CMOS BUS INTERFACE LATCH IDT74FCT841AT/BT/CT/DT D E S C R IP TIO N : FE A T U R E S : - Low input and output leakage <1 |j A max. - Extended commercial range of -40°C to +85°C - CMOS power levels - True TTL input and output compatibility The FCT841T series is built using an advanced dual metal CM O S

DAC85LD-CBI-I

Abstract: DAC85C-CBI-V DAC85C-CCD-V DAC85C-CBI-I ANI 1015 DAC85C DAC85 ADDAC85 DAC85-CBI-1 DAC85-CBI-I
Contextual Info: ANALOG ► DEVICES High Performance 12-Bit 1C D/A Converter FEATURES Improved Replacement for Standard D A C 8 5 3 Chip, High Reliability Construction Low Power Dissipation Laser-Trimmed to High Accuracy: ±3/4L S B M ax Nonlinearity, -55°C to +125°C A D D A C 8 5 M IL

Contextual Info: FAST CMOS 10-BIT BUFFER DESCRIPTION: FEATURES: - Low input and output leakage <1 |j A max. - Extended commercial range of -40°C to +85°C - CMOS power levels • - The FCT2827T 10-bit bus driver provides high-performance bus interface buffering forwide data/address paths or buses carrying parity. The

10N50A

Abstract: 10n400 10N40 AN7264 10N50AD 20n50 10N50D 10n5 IGTH10N50D IGTH10N40D
Contextual Info: -File Num ber Insulated-Gate Bipolar Transistors IGTH10N40D, IGTH10N40AD, IGTH10N50D, IGTH10N50AD 2273 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistors IGBTs With Anti-Parallel Ultra-Fast Diode

Contextual Info: IGBT with Diode IXSH 15N120AU1 ^C25 V CES SCSOA Capability CE sat Symbol Test Conditions V CES T , = 25°C to 150°C 1200 V vCGR T j = 25°C to 150°C; ReE= 1 MQ 1200 V v vGEM C ontinuous T ransient ±20 ±30 V V ^C2S ^C90 ^CM T c = 25°C T c = 90” C T c = 25°C , 1 ms

Contextual Info: SLR-37 Series -í :t — Y / Light Emitting Diodes SLR-37 <f> 3.1 mm Small-Sized Reflecting Lamps S e rie s Dimensions (U nit: mm) SLR-37 v ' J - X ' l i , ± n 4- n m isi ± (c j s a L, u t ¡ s m au & 3.1mm i 5 A, JEÎÈ4'fflJÉCÎI íBT' # 5 J: 9 1 -4' o T i ' S T o

IDT29FCT52

Contextual Info: FAST CMOS OCTAL REGISTERED TRANSCEIVER FE A T U R E S : - Low input and output leakage <1 |j A max. - Extended commercial range of -40°C to +85°C - CMOS power levels - True TTL input and output compatibility IDT29FCT52AT/BT/CT/DT D E S C R IP TIO N : The IDT29FCT52AT/BT/CT/DT is an 8-bit registered transceiver built

Contextual Info: FAST CMOS 16-BIT REGISTERED TRANSCEIVER FEATURES: D E S C R IP TIO N : - 0.5 MICRON CMOS Technology - High-speed, low-power CMOS replacement for ABT functions - Typical tSK o (Output Skew) < 250ps - Low input and output leakage < 1 |j A (max.) - The FCT16952AT/BT/CT/ET 16-bit registered transceiver is built

Contextual Info: HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTER IDT74FCT823AT/BT/CT/DT D E S C R IP TIO N : FEATURES: - Low input and output leakage <1 |j A max. - Extended commercial range of -40° C to +85° C technology. TheFCT823T series bus interface registers are designed to

Contextual Info: MITSUBISHI IGBT MODULES CM300HA-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching applications. Each m odule consists of one IG BT in a single co nfig ura ­ tion w ith a reverse-connected super-fast recovery free-w heel diode.

74LS429

Abstract: PLD2 N74LS429N
Contextual Info: Signetics 74LS429 FIFO RAM Controller FRC Preliminary Specification Logic Products FEATURES • Direct addressing up to 64K • Cascadable for addressing beyond 64K • Asynchronous Read/Write operation • 3-State address outputs • Selectable FIFO length in

IDT74FCT821

Contextual Info: HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTER D E S C R IP TIO N : FE A T U R E S : - Low input and output leakage <1 p A max. - Extended commercial range of -40°C to +85°C - CMOS power levels - True TTL input and output compatibility - - • • IDT74FCT821AT/BT/CT

SLR-320

Abstract: SLR-320YC
Contextual Info: -f SLR-320 Series K / Light Emitting Diodes SLR-320 Series ~7>~f 0 3.1 mm Small-Sized Reflecting Lamps • SLR-320 v <J - X 'li, Dimensions (U nit: mm) G aP m m & 7 > 7 T 't o ¡t$lC 2.5m m f v f # 5 T t S tCift&t- L fc S 'J 'S ! 5 > 7 " ? T „ 4 m m < n % % ;& , 2 m < D l s > X £ < k V E i

Contextual Info: SKiiP 11NAB066V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper J:BT *: *: *:.^ $- N FE O:H 1'7&- /2 &%68-& -?& 858&4 $- N FE [¥S] O:H $R N LES O: $- N FE [¥S] O:H $R N L¥E O: 2? N L K- J+BT Diode - Inverter, Chopper

f650

Abstract: UPA54H DIODE GOC 63 411K PA54H diode 3L DIODE T420 LT 745 S t802 t514
Contextual Info: NEC j m + T / v r x K 7 K Diode A rra y A u X l f * * v T ; u ^ v U K 7 P A 5 4 H K K & Ä X - T ^ V ^ J S Silicon Epitaxial Diode Array High Speed Switching / ¿ P A 54H f ± , v S IP fc, # '/ — K Ä S Ä iS X ^ IJ y y ? *• - K 7 W (6 * ^ -) « • » H / P A C K A G E D IM EN SIO N S

D25N4

Abstract: D40N6 d25n12 D25N10 D32N8 D25N05
Contextual Info: STLICON DIODES_ _ _ _ _ _ _ _ _ _ STANDARD : : J FAVM 1 : : T Y P E c s m im ~ . . RECTIFIERS V RRM VF ! r FSM 1 :t p = i0 m s ; S 2 5 ° C : IR & Ip 1 2 5 °C VR R M * 1 0 0 °C 1 ! m ax. m ax. (A (mA> (m A ) m ax. i 40 Arms

Contextual Info: FAST CMOS 16-BIT REGISTERED TRANSCEIVER IDT54/74FCT162952AT/BT/CT/ET D E S C R IP TIO N : FE A T U R E S : - 0.5 MICRON CMOS Technology - High-speed, low-power CMOS replacement for ABT functions - Typical tSK o (Output Skew) < 250ps - Low input and output leakage < 1 |j A (max.)