LM 538 N IC Search Results

lm 538 n ic

Contextual Info: IStanford Microdevices Product Description SHF-0189 Stanford M icrodevices’ SHF-0189 is a high perform ance AIG aAs/G aAs Heterostructure FET housed in a low-cost surface-m ount SO T-89 plastic package. HFET technology im proves breakdown voltage w hile m inim izing Schottky

fet K 793

Abstract: A/LM 793
Contextual Info: Stanford Microdevices SHF-0187 Product Description Stanford M icrodevices’ SHF-0187 is a AIG aAs/G aAs Heterostructure FET housed in a low cost drop-in package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current

Contextual Info: Product Description SNA-300 Stanford M icrodevices’ SNA-300 is a GaAs m onolithic broad­ band am plifier MMIC in die form. This am plifier provides 22dB of gain when biased at 35m A and 4V. External DC decoupling capacitors determ ine low frequency response. The use of an external resistor allow s for bias

Contextual Info: f¡iS Siati ford M ¡.crudev ices Product Description SHF-0187 Stanford M icrodevices’ SHF-0187 is a AIG aAs/G aAs Heterostructure FET housed in a low cost drop-in package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current

Contextual Info: S Stanford Microdevices SHF-0187 Product Description Stanford M icrodevices’ SHF-0187 is a AIG aAs/G aAs Heterostructure FET housed in a low cost drop-in package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current

Contextual Info: IStanford Microdevices Product Description SHF-0189 Stanford M icrodevices’ SHF-0189 is a high perform ance AIG aAs/G aAs Heterostructure FET housed in a low-cost surface-m ount SO T-89 plastic package. HFET technology im proves breakdown voltage w hile m inim izing Schottky

Contextual Info: RN4911 RN4911 SW IT CH ING , INVERTER CIRCUIT, INTERFACE CIRCUIT U nit in mm A N D DRIVER CIRCUIT APPL ICATIONS. • Including Two Devices in US6 (U ltra Super Mini Type with 6 leads) • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process

lm 538 n ic

Contextual Info: [O rd e rin g numb€r: EN3965 _ FC150 P N P /N PN E pitaxial P la n a r Silicon Com posite T ra n sisto r Low-Frequency General-Purpose Amp, Driver Applications F e a tu r e s • Com posite type w ith 2 tra n sisto rs contained in the CP package c u rre n tly in use, im p ro v in g th e

Contextual Info: S tati ford M i cru d ev ices Product Description SHF-0189 Stanford M icrodevices’ SH F-0189 is a high perform ance AIG aAs/G aAs H eterostructure FET housed in a low-cost surface-m ount SO T-89 plastic package. HFET technology im proves breakdow n voltage w hile m inim izing Schottky

LM240

Abstract: lm24013 INTEGRATED POWER SEMICONDUCTORS LTD LM1401 IP140A IP7800 IP7800A LM140 LM340 TC3220
Contextual Info: INTEGRATED POWER L7 4825898 IN TEG R A TED dT J MàSSa^fl QOdCaib 1 | 82D POWER 00316 D 1 Amp, 3-Terminal Positive Regulators , SEM ICO ND U C TO R S LTD Features Description The IP140A/ LM140/ IP240A/ LM240/ IP340A/ • 1% Tolerance LM340/ IP7800A/ IP7800/ IP7800AC/ IP7800C

CD4046 equivalent

Abstract: ca3130 replacement ma702 MC1554 CMP-01 CD4046 MCI 1458 LH0002 equivalent UA740 CD4016 equivalent
Contextual Info: MANUFACTURER Fairchild Semiconductor Intersil PART NUMBER H A R R IS EQ U IV A LE N T NOTES M A 7 02 HA-2620/2625 /XA709 HA-909/911 B2 ;uA715 HA-2520/2525 B2 juA725 HA-2700/2705 A3 M A727 HA-2900/2905 C2 M A734 HA-2111/2311 C2 M A 7 40 HA-2060/2065 B2 juA741

HA-2650

Abstract: H12-200 MC1554 teledyne philbrick sl 1489a HA-2000 HA-2000A HA-2050A ram 2111 signetics HA-2060A
Contextual Info: HARRIS OPERATIONAL AMPLIFIERS Selection Guide for Military Applications -5 5 °C to +125°C PARAM ETER* F.E.T. PREAMP HA-2000 HA-2000A HA-205O HA-909 S/H ?r a m HA-2060A HA-2400 HA-2420 HA-2050A HA-2060 HA-2500 HA-2502 HA-2510 HA-2512 UNITS INPUT C H A R A C TE R IST IC S

2SC3501

Abstract: 2SC2731
Contextual Info: 2SC3501 NPN SILICON NPN EPITA XIA L + VHF AMPLIFIER VHF TV TUNER MIXER, O SCILLATO R VHF M K'ÜM mm VHF t v * í — 1. •'"<— X •’ B a s e 2. NC 3 . X • 7 ÿ : E m itte r 4 . 3 is ? 9 '• C o lle c to r D im e n sio n s in mm (FPA K) A BSO LU TE MAXIMUM RATINGS ( T a =

HA2650

Abstract: K 2645 schematic ma702 MC1554 CD4046 LM 1436 HA-2000 HA-2000A HA-2050A HA-2060
Contextual Info: HARRIS OPERATIONAL AMPLIFIERS Selection Guide for Military Applications - 5 5 ° C to + 1 2 5 ° C PARAM ETER* F.E.T. PR EA M P HA-2000 HA-2000A HA-205O HA-909 ?r a m HA-2060A HA-2400 HA-2050A HA-2060 S/H HA-2420 HA-2500 HA-2502 HA-2510 HA-2512 UNITS INPUT C H A R A C T E R IST IC S

2SK94

Contextual Info: 2SK949-MR FUJI PO W ER M O S-FET N-OHANNEL SILICON POWER MOS-FET F-I SERIES • "eatures ■ Outline Drawings • h igh speed switching • L dw on-resistance • No secondary breakdown • Low driving power • h igh voltage ■Applications • Switching regulators

LM310A

Abstract: LM302A LM110 LM310 LM102H LM310C LM102 LM102F LM110F LM102H/883B
Contextual Info: H S H iim LM 102/302 L M 1 10/310 High P erfo rm a n ce V o ltag e F o llo w e rs F EA T U R E S G E N E R A L D ESCRIPTIO N • Low Input Current — 7 to 30 nA Max • H igh Slew Rate — 10 to 30 V//is The L M 102/LM 302and LM 110/LM 310are m onolithic high

LM310A

Abstract: lm1021 LM310 lm310n LM302A LM110 LM302 LM110W LM102 LM102F
Contextual Info: DIMmS^ÜL LM110/310 High Performance Voltage Followers G E N E R A L DESC R IPTIO N FEATURES • Low In p u t C u rren t — 7 to 3 0 nA M ax • H ig h Slew Rate — 10 to 3 0 V //is • Wide Bandw idth — 2 0 M H z L M 1 1 0 /L M 3 1 0 • Internal Frequency Compensation

AIR FLOW DETECTOR

Abstract: temperature sensor lm 125 RETS135H 50 k thermo pot air flow detector sensor LM33S LM336 application note LM135H-MIL LM308 HEATER, to-92
Contextual Info: LM135/LM235/LM335, LM135A/LM235A/LM335A N a t i o n a l S e m i c o n d u c t o r LM 135/LM 235/LM335, LM 135A/LM235A/LM335A Precision Temperature Sensors G eneral Description The LM135 series are precision, easily-calibrated, integrat­ ed circuit temperature sensors. Operating as a 2-terminal

Contextual Info: £Z7 SCS-THOMSON Ä 7# *MILiera !0 S M54HC194 M74HC194 4 BIT PIPO SHIFT REGISTER • HIGH SPEED tPD = 12 ns TYP.) AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT Ta = 25 °C ■ OUTPUT DRIVE CAPABILITY 1 0 LSTTLLOADS ■ SYMMETRICAL OUTPUT IMPEDANCE

a358

Contextual Info: 7 ^ 2 3 7 Q D 23130 3 • SGS-THOMSON lm i58,a-lm 258,a Eji KLUfgTTtHìODìOOOS LM358,A-LM2904-NE532 S 6 S-TH0M S0N 30E » LOW POWER DUAL OPERATIONAL AMPLIFIERS ■ INTERNALLY FREQUENCY COMPENSATED. ■ LARGE DC VOLTAGE GAIN : 100 dB ■ W ID E BANDW IDTH unity gain : 1.1 MHz (tem­

IC LM 258

Contextual Info: r = ± 7 Z S G S - T H O M S O N # M Q (M [iy i ïï[M O (D S l m i 5 8 , a - l m 2 5 8 , a L M 3 5 8 ,A -L M 2 9 0 4 -N E 5 3 2 LOW POWER DUAL OPERATIONAL AMPLIFIERS . INTERNALLY FREQUENCY COMPENSATED. • LARGE DC VOLTAGE GAIN : 100 dB ■ W IDE BANDWIDTH (unity gain : 1.1 MHz (tem­

SOLITRON

Abstract: CD4046 ci 1458 texas HA-2700 MC1554 Exar cross HARRIS / HA1 ma702 Signetics 2650 HA-2005A
Contextual Info: HARRIS OPERATIONAL AMPLIFIERS Selection Guide for Commercial/Industrial Applications ÜOC to +75°C PARAM ETER * HA-911 S/H HA-2425 HA-2505 F.E.T. PREAMP PRAM HA-2005 HA-2ÖÖ5A HA-2055 HA-2055A HA-2065 HA-2065A HA-2405 HA-2515 HA-2525 HA-2535 UNITS INPUT C H A R A C TE R IST IC S

LM324 pin configuration

Abstract: LM324J transistor v15 LM124D pin configuration of LM324 lm324 DUAL SUPPLY application LM324N IC LM 324 ic lm324 LM124
Contextual Info: LM124/324 Low Power Quad Operational Amplifiers GENERAL DESCRIPTION FEATURES • Internally frequency compensated for unity gain • Large DC voltage gain • Wide bandwidth unity gain (temperature compensated) The LM124 series consists of four independent, high

2904N

Abstract: IC LM 358 LM 358 st 2904 lm 358 ic IC LM 258 LM 358 opamp 358a lm 538 n ic lt 2904
Contextual Info: g ì SCS-THOMSON lm i 58,a-lm258,a IlLitm «! LM358,A-LM2904-NE532 LOW POWER DUAL OPERATIONAL AMPLIFIERS INTERNALLY FREQUENCY COMPENSATED. LARGE DC VOLTAGE GAIN : 100 dB WIDE BANDWIDTH unity gain : 1.1 MHz (tem­ perature compensated) VERY LOW SUPPLY CURRENT/AMPLI