Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LN2306LT3G Search Results

    LN2306LT3G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LN2306LT1G S-LN2306LT1G 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS ON , Vgs@10V, Ids@5.8A = 38mΩ RDS(ON), Vgs@4.5V, Ids@5.0A = 43mΩ RDS(ON), Vgs@2.5V, Ids@4.0A = 62mΩ 3 1 2 Features Advanced trench process technology


    Original     		PDF LN2306LT1G S-LN2306LT1G AEC-Q101 236AB) LN2306LT3G S-LN2306LT3G 3000/Tape 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET LN2306LT1G VDS= 30V RDS ON , Vgs@10V, Ids@5.8A = 38mΩ RDS(ON), Vgs@4.5V, Ids@5.0A = 43mΩ RDS(ON), Vgs@2.5V, Ids@4.0A = 62mΩ 3 1 2 Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2306LT1G 236AB) 3000/Tape LN2306LT3G 10000/Tape 06LT1G OT-23

    N06 MOSFET

    Abstract: LN2306LT1G n06g ln2306 43m marking N-Channel, 30V, 4.0A, Power MOSFET SOT-23
    Text: LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET LN2306LT1G VDS= 30V RDS ON , Vgs@10V, Ids@5.8A = 38mΩ RDS(ON), Vgs@4.5V, Ids@5.0A = 43mΩ RDS(ON), Vgs@2.5V, Ids@4.0A = 62mΩ 3 1 2 Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2306LT1G 236AB) 3000/Tape LN2306LT3G 10000/Tape OT-23 N06 MOSFET LN2306LT1G n06g ln2306 43m marking N-Channel, 30V, 4.0A, Power MOSFET SOT-23