LNA MARKING VP Search Results

Contextual Info: BGA713N7 Single-Band UMTS LNA 700, 800 MHz Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

Contextual Info: BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

smd resistor 0402 footprint dimension

Abstract: BGA713L7 TGS 821 C166 T1533 713L LNA marking R0
Contextual Info: BGA713L7 Single-Band UMTS LNA 700, 800 MHz Data Sheet Revision 3.0, 2010-10-04 RF & Protection Devices Edition 2010-10-04 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

Contextual Info: BGA777N7 Single-Band UMTS LNA 2300 - 2700 MHz Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BGA711N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BGA713L7 Single-Band UMTS LNA 700, 800 MHz Data Sheet Revision 3.0, 2010-10-04 RF & Protection Devices Edition 2010-10-04 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

TGS 880

Abstract: INFINEON PART MARKING BGA751L7 S12L
Contextual Info: D a t a S h e e t , V 3. 0 , S e p t e m b e r 2 00 8 B G A 7 51 L7 S i n gl e - B a n d U M T S L N A 800 MHz S m a l l S i g n a l D i s c r et e s Edition 2008-09-25 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008.

BGA751L7

Contextual Info: Data Sheet, V3.2, May 2009 BGA751L7 S i ng l e - B an d U M T S L N A 800, 900 MHz RF & Protection Devices Edition 2009-05-27 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

Contextual Info: Data Sheet, V3.2, May 2009 BGA751L7 S i ng l e - B an d U M T S L N A 800, 900 MHz RF & Protection Devices Edition 2009-05-27 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

TGS 2620

Abstract: UMTS transistor TGS 2600
Contextual Info: Data Sheet, V3.0, July 2009 BGA777L7 S i ng l e - B an d U M T S L N A 2300 - 2700 MHz RF & Protection Devices Edition 2009-07-02 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

smd resistor 0402 footprint dimension

Abstract: BGA711L7
Contextual Info: Data Sheet, V3.2, May 2009 BGA711L7 S i ng l e - B an d U M T S L N A 2100, 1900 MHz RF & Protection Devices Edition 2009-05-27 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

Contextual Info: Data Sheet, V3.0, July 2009 BGA777L7 S i ng l e - B an d U M T S L N A 2300 - 2700 MHz RF & Protection Devices Edition 2009-07-02 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

BGA711L7

Abstract: t-1531
Contextual Info: D a t a S he et , V 3. 1 , N o v e m be r 2 00 8 B G A 7 11 L7 S i n gl e - B a n d U M T S LN A 2 1 00 , 1 9 0 0 M H z S m a l l S i g n a l D i s c r et e s Edition 2008-11-05 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008.

D2832A

Abstract: CXD2832AER CXD2832 CXD2832A CXd283 sony TV TUNER pin
Contextual Info: Zero-IF Tuner IC for Digital Satellite Broadcast CXD2832AER Description The CXD2832AER is an IC developed for direct orthogonal detection of 1st IF signal 1 to 2 GHz from RF converter block in a digital satellite broadcast receiver system. The CXD2832AER incorporates all the functions (LNA , RF gain control

sot1230

Abstract: silicon diode and germanium
Contextual Info: ;6 21  BGU8009 SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass Rev. 1 — 1 February 2013 Product data sheet 1. Product profile 1.1 General description The BGU8009 is a Low Noise Amplifier LNA for GNSS receiver applications, available in

HEMT Amplifier

Abstract: LNA marking G
Contextual Info: In fineon !*íh«t!eg¡íis 24 - 32 GHz GaAs Low Noise Amplifier MMIC 24 - 32 GHz LNA Preliminary Data Sheet • Two-Stage Monolithic Microwave integrated Circuit MMIC HEMT Amplifier (coplanar design) • Input/Output matched to 50 • Frequency range: 24 GHz to 32 GHz

Contextual Info: TQP3M9039 500−1500 MHz Dual LNA Applications • • • • • Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless 16-pin 4x4 mm QFN Package Product Features • • • • •

3M9039

Abstract: Thin Quad flat package mo-220 68 ECJ0EC1H470J
Contextual Info: TQP3M9039 700−1000 MHz Dual LNA Applications •     Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless 16-pin 4x4 mm QFN Package Product Features     

BGA734L16

Abstract: FOMA1700 FOMA800 JESD22-A114 T1520 FR4 Prepreg
Contextual Info: Data Sheet, V1.0, January 2008 BGA734L16 Low Power Tri-Band UMTS LNA 2100, 1900, 800 MHz RF & Protection Devices Edition 2008-01-25 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

Contextual Info: TQP3M9040 1500−2300 MHz Dual LNA Applications • • • • • Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless 16-pin 4x4 mm QFN Package Product Features • • • • •

FR4 Prepreg

Abstract: BGA734L16 FOMA1700 FOMA800
Contextual Info: D a t a S h e e t , V 2 . 0 , J a n ua ry 2 00 8 B G A 7 34 L1 6 Low Power Tri-Band UMTS LNA 2 1 00 , 1 9 0 0, 8 0 0 M H z S m a l l S i g n a l D i s c r et e s Edition 2008-01-25 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008.

Contextual Info: W I R E L E S S TQ9203J C O M M U N I C A T I O N S PRELIM IN ARY Block Diagram Low-Current RFIC Downconverter Features * + 5 V single supply * Internal buffer amplifier on mixer LO port Product Description * On-chip matching to 50 Q The TQ9203J RFIC Downconverter is a multifunction RF front end designed for the high

Germanium power

Contextual Info: Data Sheet, Version 1.2, March 2006 BGA615L7 Silicon Germanium GPS Low Noise Amplifier Automotive and Industrial Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2006-03-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München

MARKING CODE 106 QFN

Abstract: 04023J0R5BBSTR 3M9040
Contextual Info: TQP3M9040 1500−2300 MHz Dual LNA Applications • • • • • Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless 16-pin 4x4 mm QFN Package Product Features • • • • •