LOAD CELL 18 AST Search Results

asynchronous 4bit up down counter using jk flip flop

Abstract: counter 74168 Multiplexer 74152 3-8 decoder 74138 synchronous counter using 4 flip flip 74183 alu 7444 series Excess-3-gray code to Decimal decoder MH 74151 counter 74169 74169 SYNCHRONOUS 4-BIT BINARY COUNTER
Contextual Info: • GENERAL DESCRIPTION T h e M S M 7 0 V 0 0 0 series is the gate array LSI based on the m aster slice m e th o d using the high p erfo rm an ce silicon gate 1.5 m ic ro n H C M O S process w ith th e d u a l-la y e r m etal structure. T his series has th e features to easily realize fu n c tio n s o f th e s c h m itt trigger, c ry s ta l/

Contextual Info: AsTriX Device CellBus Expansion Switch TXC-05840 DATA SHEET PRODUCT PREVIEW The AsTriX™ TXC-05840 CellBus expansion switch is a single chip switching solution for ATM systems. In order to meet the accelerating need for bandwidth in access systems, the AsTriX is designed to allow higher CellBus

G4060

Contextual Info: PRODUCT FEATURES PRODUCT DESCR IPTIO N • Standard Metal-Gate CMOS Technology M etal-G a te C M O S technology Is used in fabrication of the G 4 0 0 0 M aster slice family of gate arrays. This provides both high noise imm unity and low power consum ption plus operation over a power supply

VOLT U3 503 10 01000

Contextual Info: AsTriX Device CellBus Expansion Switch TXC-05840 DATA SHEET PRODUCT PREVIEW The AsTriX™ TXC-05840 CellBus expansion switch is a single chip switching solution for ATM systems. In order to meet the accelerating need for bandwidth in access systems, the AsTriX is designed to allow higher CellBus

Contextual Info: UTOPIAFIFO PRELIMINARY INFORMATION 1 TO 4 IDT77301 128 X 9 X 4 DEMULTIPLEXER-FIFO Integrated Device Technology, Inc. FEATURES: GENERAL DESCRIPTION • • • • • • • • • • • • • • The IDT77301 UtopiaFlFO is a high-speed, low power

RX1d

Abstract: 3A184
Contextual Info: AsTriX Device CellBus Expansion Switch TXC-05840 DATA SHEET The AsTriX™ TXC-05840 CellBus Expansion Switch is a single chip switching solution for ATM systems. In order to meet the accelerating need for bandwidth in access systems, the AsTriX is designed to allow higher

Contextual Info: Model 5303 Vishay Revere Double Ended Beam Load Cell FEATURES • Capacities: 25 to 125Klbs • Environmental protection: IP67 DIN 40.050 • Material: Nickel plated steel • Certified to NTEP class IIIL, 10000 divisions OPTIONAL FEATURE • FM approved for use in potentially explosive atmosphere

Contextual Info: UTOPIAFIFO PRELIMINARY INFORMATION 1 TO 4 IDT77301 128 X 9 X 4 DEMULTIPLEXER-FIFO FEATURES: GENERAL DESCRIPTION • • • • • • • • • • • • • • The IDT77301 U to p ia F lF O is a high-speed, low pow er single input port supplying fo u r d e m ultiplexing FIFO output

how to make lead acid battery plates

Abstract: 10 amp 12 volt solar charger circuits MY65 1978 Data catalog caterpillar
Contextual Info: ttOUW Hl oiuattBi flpnflMBlìSS CURTIS BUTTERY BOOK LERD BCID TRMTIOn BATTERIES Written by the staff of Curtis Instruments, Inc. Edward M. Marwell, President Eugene P. Finger, Vice-President/Engineering Eugene A. Sands, Vice-President/Marketing Henry M. Levine, Writing Consultant

Digital Weighing Scale schematic

Abstract: tedea 1042 Tedea-Huntleigh model 1022 schematic diagram to convert 230VAC to 5VDC POWER tedea huntleigh load cell 3410 tedea load cell 1004 Weighing scale sensor gozinta Tedea-Huntleigh 9010 manual weight indicator vt200 tedea huntleigh load cell 3411
Contextual Info: VISHAY INTERTECHN O L O G Y , INC . INTERACTIVE data book load cells and indicators vishay transDucers vse-db0086-0802 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

A10q

Abstract: HM5116400Z-6 ice power 200 asc HM5116400Z HM5116400TT-7 CSR BLE HM5116400Z8
Contextual Info: blE D • HMTbSGB DD23 351 E7M ■ H I T 2 H M 511 6 4 0 0 S e r i e s - HITACHI/ LOGIC/ARRAYS/MEM 4,194,304-w ord x 4-bit D ynam ic R andom A c c e s s Memory The H itachi H M 5116400 is a CMOS dynamic RAM organized 4,194,304 w ords x 4 bits. It employs the most advanced CMOS technology for

schematic diagram dc-ac inverter

Abstract: ba2p1t ic top 246 yn msi ms 1731 mod 8 ring counter using JK flip flop semiconductor SIM 8309 S1L EPSON SIM 8309 marking CODE GA rx 434 ask
Contextual Info: MF1246-04 GATE ARRAY S1L60000 Series DESIGN GUIDE NOTICE No part of this material may be reproduced or duplicated in any from or by any means without the written permission of EPSON. EPSON reserves the right to make changes to this material without notice. EPSON does not assume any liability of any kind arising out of any inaccuracies contained

5303

Contextual Info: Model 5303 Revere Double-Ended Beam Load Cell FEATURES • Capacities: 25k to 125k lbs • Environmental protection: IP67 DIN 40.050 • Material: Nickel-plated steel • Certified to NTEP class IIIL, 10000 divisions • Optional ❍❍ FM approved for use in potentially explosive

marking code R56 SMD Transistor

Abstract: smd transistor p5s marking code R52 SMD Transistor
Contextual Info: User's Guide SLUU335A – December 2008 – Revised January 2010 bq78PL114 8S EVM The PowerLAN 8S Evaluation Module EVM is a complete evaluation system for the bq78PL114 Battery Management Controller and bq76PL102 Dual-Cell Li-Ion Battery Monitor integrated circuits

m51164

Abstract: ALRS8 a1a511 A255K HM5116400ATS A8819
Contextual Info: HM5116400A/AL Series 4,194,304-w ord x 4-bit Dynam ic Random Access Memory The H itachi H M 5 116400A /A L is a C M O S dynamic R A M organized 4,194,304 words x 4 bits. It employs the most advanced CMOS technology for high perform ance and low power. The

counter 74168

Abstract: 3-8 decoder 74138 counter 74169 Multiplexer 74152 74183 adder 74381 alu 74169 binary counter 74151 8 by 1 Multiplexer flip flop 74379 74175 flip flops
Contextual Info: • GENERAL DESCRIPTION T h e M S M 7 0 V 0 0 0 series is the gate array LSI based on the m aster slice m e th o d using the high p erfo rm an ce silicon gate 1.5 m ic ro n H C M O S process w ith th e d u a l-la y e r m etal structure. T h is series has th e features to easily realize fu n c tio n s o f th e s c h m itt trigger, c ry s ta l/

Contextual Info: ADE-203-369 Z HM5117400B/BL Series 4,194,304-word x 4-bit Dynamic Random Access Memory Preliminary HITACHI T h e H ita c h i H M 5 1 1 7 4 0 0 B /B L is a C M O S dynam ic R A M organized 4 ,194,304-word x 4-bit. It em ploys the m ost advanced C M O S technology

Contextual Info: LF43891 9 x 9-bit Digital Filter D E V IC E S IN C O R P O R A T E D □ □ □ □ 40 MHz Maximum Sampling Rate 320 MHz Multiply-Accumulate Rate 8 Filter Cells 8-bit Unsigned or 9-bit Two's Complement Data/Coefficients □ 26-bit Data Outputs □ Shift-and-Add Output Stage for

74138n

Abstract: buffer 74374 74373 cmos dual s-r latch of IC 74191 G701
Contextual Info: • GENERAL DESCRIPTION T h e M S M 7 0 H 0 0 0 series is the gate array LSI based on the m aster slice m e th o d using the high p erfo rm a n c e silicon gate 2 m ic ro n H C M O S process w ith th e d u a l-la y e r m etal structure. T h is series has th e features to easily realize fu n c tio n s o f th e s c h m itt trigger, c ry s ta l/

tablet schematic

Abstract: power adapter for tablet schematic power adapter for netbook schematic BN35-3H103 bq29200 tablet ic list Tablet PC schematic SBS c11 battery WSL2512R0100F bqEVSW
Contextual Info: User's Guide SLUU494 – February 2011 bq28400EVM-001 SBS 1.1 Compliant Tablet PC and Netbook 2-Series Cell Li-Ion Battery Gas Gauge and Protection The bq28400EVM-001 is a complete evaluation system for the bq28400/bq29200 battery management system. The evaluation module EVM includes one bq28400/bq29200 circuit module. Windows -based

Contextual Info: LF43fifi1 3 LF43881 8 x 8-bit Digital Filter DEVICES INCORPORATED DESCRIPTION FEATURES □ □ □ □ 40 MHz Maximum Sampling Rate 320 MHz Multiply-AccumulateRate 8 Filter Cells 8-bit Unsigned or Two's Complement Data □ 8-bit Unsigned or Two's Complement

lf43891gm

Contextual Info: LF43891 N l-V IC tià 9 x 9 -b it D ig ital Filter NCCDH P H HA f f- [ FEATURES □ 30 MHz Maximum Sampling Rate □ 240 MHz Multiply-Accumulate Rate □ 8 Filter Cells □ 8-bit Unsigned or 9-bit Two's Complement Data □ 8-bit Unsigned or 9-bit Two's Complement Coefficients

BQ77910

Contextual Info: User's Guide SLUU491 – April 2011 bq77908EVM Evaluation Module The bq77908EVM-001 evaluation module EVM is a complete evaluation system for the bq77908, a fourto eight-cell Li-ion battery protection integrated circuit. The EVM consists of a bq77908 circuit module and

Contextual Info: f f ì H A R R HSP43881 IS S E M I C O N D U C T O R Digital Filter January 1994 Features Description • Eight Filter Cells The HSP43881 is a video speed Digital Filter DF designed to efficiently implement vector operations such as FIR digital filters. It is comprised of eight filter cells cascaded internally