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    LOGIC LEVEL GATE DRIVE MOSFET Search Results

    LOGIC LEVEL GATE DRIVE MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    LOGIC LEVEL GATE DRIVE MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC298

    Abstract: No abstract text available
    Text: HUF76107P3 Data Sheet October 1999 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Ordering Information PART NUMBER HUF76107P3 PACKAGE TO-220AB 4382.5 Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using


    Original     		PDF HUF76107P3 TC298

    TA7613

    Abstract: AN9321 AN9322 HUF76131SK8 HUF76131SK8T MS-012AA TB334
    Text: HUF76131SK8 Data Sheet December 2001 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76131SK8 TA7613 AN9321 AN9322 HUF76131SK8 HUF76131SK8T MS-012AA TB334

    AN7254

    Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
    Text: HUF76132SK8 Data Sheet December 2001 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76132SK8 AN7254 AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF76131SK8 Data Sheet June 2000 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76131SK8

    TC2206

    Abstract: TC-2112 202E1
    Text: HUF76113SK8 Data Sheet October 1999 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 6.5A, 30V • Ultra Low On-Resistance, rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • Temperature Compensating SABER Model


    Original     		PDF HUF76113SK8 TC2206 TC-2112 202E1

    Untitled

    Abstract: No abstract text available
    Text: HUF76131SK8 Data Sheet June 2000 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		PDF HUF76131SK8

    Untitled

    Abstract: No abstract text available
    Text: HP4936DY Semiconductor 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET May 1998 Features Description • Logic Level Gate Drive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HP4936DY HP4936DY MS-012AA 330mm EIA-481

    35E2

    Abstract: AN9321 HUF76105SK8 HUF76105SK8T MS-012AA TB334
    Text: HUF76105SK8 Data Sheet May 1999 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4719.1 Features • Logic Level Gate Drive [ /Title This N-Channel power MOSFET is • 5.5A, 30V HUF76 manufactured using the innovative • Ultra Low On-Resistance, rDS(ON = 0.050Ω


    Original     		PDF HUF76105SK8 HUF76 105SK8 35E2 AN9321 HUF76105SK8 HUF76105SK8T MS-012AA TB334

    Untitled

    Abstract: No abstract text available
    Text: WT3139K Surface Mount P-Channel MOSFET P b Lead Pb -Free 3 1 1. Gate 2. Source 3. Drain 2 Features: * Surface Mount Package * P-Channel Switch with Low R DS (on) * Operated at Low Logic Level Gate Drive SOT-723 Applications: 3 * Load/Power Switching * Interfacing, Logic Switching


    Original     		PDF WT3139K OT-723 30-Jul-2013 OT-723

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PSMN3R0-30YLD N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original     		PDF PSMN3R0-30YLD LFPAK56 LFPAK56

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PSMN0R9-30YLD N-channel 30 V, 0.87 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 21 February 2014 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original     		PDF PSMN0R9-30YLD LFPAK56 LFPAK56

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 33 PSMN4R2-30MLD N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 19 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers


    Original     		PDF PSMN4R2-30MLD LFPAK33 LFPAK33

    Si4435DY

    Abstract: Si4719CY 70669
    Text: Si4719CY Siliconix Battery Disconnect Switch FEATURES D Solution for Bi-Directional Blocking Bi-Directional Conduction Switch D 6- to 30-V Operation D Ground Referenced Logic Level Inputs D Integrated Low rDS on MOSFET D Level-Shifted Gate Drive with Internal MOSFET


    Original     		PDF Si4719CY Si4719 Si6415 Si4435DY 70669

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1217 IRL620 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 200V RDS(on) = 0.80 Ω ID = 5.2A Description


    Original     		PDF IRL620 O-220 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRL630 FEATURES BVDSS = 200 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology RDS(on) = 0.4Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 9 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area


    Original     		PDF IRL630 O-220

    MOSFET 20V 120A

    Abstract: IRFPE30 IRLP3803 ISD71A
    Text: PD - _ IRLP3803 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description VDSS = 30V RDS on = 0.006Ω


    Original     		PDF IRLP3803 O-247 IRFPE30 MOSFET 20V 120A IRFPE30 IRLP3803 ISD71A

    IRL3103

    Abstract: IRL3103D2
    Text: PD 9.1660 IRL3103D2 PRELIMINARY FETKYTM MOSFET & SCHOTTKY RECTIFIER l l l l l Copackaged HEXFET Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application D VDSS = 30V


    Original     		PDF IRL3103D2 O-220 IRL3103 IRL3103D2

    marking 34A

    Abstract: IRFI840G IRL3103 IRLI3103
    Text: PD 9.1377 IRLI3103 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 30V RDS on = 0.014 Ω ID = 38A Description


    Original     		PDF IRLI3103 O-220 marking 34A IRFI840G IRL3103 IRLI3103

    DO313

    Abstract: IRLZ34A 1GIT a2633
    Text: IRLZ34A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 60 V Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10


    OCR Scan     		PDF IRLZ34A O-220 DO313Â 30-OTO T0-220 QQ3b32fl 500MIN 7Tb414E DD3b33D DO313 IRLZ34A 1GIT a2633

    RFL1N08L

    Abstract: RFL1N10L RFP2N08L RFP2N10L
    Text: Logic-Level Power MOSFETs_ RFL1N08L, RFL1N10L, RFP2N08L, RFP2N10L File Number 1510 N-Channel Logic Level Power Fielcf-Effect Transistors L2 FET 1 and 2 A, 80 V and 100 V ros(on): 1.05fi and 1 .2 0 Features: • Design optim ized fo r 5 volt gate drive


    OCR Scan     		PDF RFL1N08L, RFL1N10L, RFP2N08L, RFP2N10L 92cs-3374i RFL1N08L RFL1N10L RFP2N08L RFP2N10L

    RFP8N18L

    Abstract: RFM8N18L TA9535 RFP8N20L RCA 518 rca 519 RFM8N20L RFP8M20L
    Text: Logic-Level Power MOSFETs_ RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L F ile N u m b e r 15114 N-Channel Logic Level Power Field-Effect Transistors L2 FET 8 A, 180 V and 200 V rDs(on): 0.5fi Features: • Design optim ized fo r 5 volt gate drive


    OCR Scan     		PDF RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L 92CS-3374I RFM8N18L RFM8N20L RFP8N18L RFP8M20L 8N20L. TA9535 RCA 518 rca 519

    RFP17N06L

    Abstract: No abstract text available
    Text: Logic-Level Power MOSFETs File Number 2272 RFP17N06L N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors 17 A, 60 V P d s o n l " 0 .1 0 0 N-CHANNEL ENHANCEMENT MODE O D Features: • Design optimized for 5 volt gate drive m Can be driven directly from O-MOS, N-MOS, TTL Circuits


    OCR Scan     		PDF RFP17N06L RFP17N06L 40tagC R06HFP17N06L07 250u9 GFSRFPf7N06lCF6

    Untitled

    Abstract: No abstract text available
    Text: IRL620A A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 0 .8 Î2 ♦ Avalanche Rugged Technology o II ♦ Rugged Gate Oxide Technology cn > ♦ Logic-Level Gate Drive ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area


    OCR Scan     		PDF IRL620A

    Untitled

    Abstract: No abstract text available
    Text: IRL510 A d van ced Power MOSFET FEATURES B ^ dss - 100 V ♦ Avalanche Rugged Technology ^DS on = 0 .4 4 Q ♦ Rugged Gate Oxide Technology lD ♦ Logic-Level Gate Drive = 5.6 A ♦ Lower Input Capacitance ♦ Improved Gate Charge T O -2 2 0 ♦ Extended Safe Operating Area


    OCR Scan     		PDF IRL510