LOW DARK CURRENT APD Search Results

peltier cooler

Abstract: Peltier TO8 16 pin Peltier peltier datasheet TO8 package apd 400- 700 nm
Contextual Info: SSO-ADH-230-TO8P APD with Peltier-cooler Specialities: The SSO - AD - 230 - TO8P is a thermoelectrically cooled APD with chip specially selected for low dark current and low "dark count rate". Applications include photon counting and other low light level sensing.

Peltier

Abstract: apd 400- 700 nm peltier cooler peltier datasheet TO8 package
Contextual Info: SSO-ADH-1100-TO8P APD with Peltier - Cooler Special characteristics The SSO - AD - 1100 - TO8P is a thermoelectrically cooled APD with chip specially selected for low dark current and low "dark count rate". Applications include photon counting and other low light level sensing.

FPD3R2

Abstract: photodiode germanium Fujitsu avalanche photodiode avalanche photodiode noise factor
Contextual Info: FPD3R2KX/LX Germanium Avalanche Photodiode FEATURES • • • • Low dark current: 0.15|j A High quantum efficiency: 75% at 1,3 jm Low Multiplied dark current: 10pA Storage & operating temperature: -40 to +85°c APPLICATIONS • High bit rate optical transmission system up to 1.0 Gbit.

Contextual Info: 2.5Gbps InGaAs APD Module 2.5Gbps InGaAs APD Module Features • • • • • • High Responsivity, facilitates –34 dBm sensitivity High speed, typical 2.5GHz Low dark current Low capacitance, typical 0.35pF Operating temperature range -40°C to 85°C

Contextual Info: 2.5Gbps InGaAs APD Module 2.5Gbps InGaAs APD Module Features • • • • • • High Responsivity, facilitates –34 dBm sensitivity High speed, typical 2.5GHz Low dark current Low capacitance, typical 0.35pF Operating temperature range -40°C to 85°C

Contextual Info: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used

Contextual Info: Silicon Geiger Mode Avalanche Photodiode DESCRIPTION The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used in

Contextual Info: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used

low dark current APD

Abstract: APD-02001 ding APD-02002 APD-02106 APD-02107 APD-02108 APD-02109
Contextual Info: GaAs PIN PD Module APD-020XX/APD-021XX „ Features a. Low Dark Current b. High Reliability „ Applications a. Digital Fiber Optical Transmission System b. Optical Test and Measurement „ Absolute Maximum Ratings Parameter Symbol Min. Max. Unit Reverse Voltage

Contextual Info: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used

low dark current APD

Abstract: avalanche photodiodes J16A
Contextual Info: Judson Technologies J16A SERIES GE AVALANCHE PHOTODIODES PB 3305 October 2000 Operating Instructions FEATURES: • 100 MICRON DIAMETER ACTIVE AREA • LOW DARK CURRENT • LOW CAPACITANCE • OFFERS IMPROVED SENSITIVITY OVER PIN DIODES • WIDE BANDWIDTH • RUGGED COAXIAL

APD 1310nm

Abstract: inGaAs APD-01001 APD-01002 APD-01003 APD-01004 APD-01101 APD-01102 APD-01103 InGaAs pin
Contextual Info: InGaAs PIN PD Module APD-010XX/APD-011XX „ Features a. InGaAs/InP PD b. Aperture Diameter75µm c. Low Dark Current d. High Linearity e. High Reliability „ Applications a. Simulation Digital Fiber Optical Transmission System b. Optical Test and Measurement

nir source

Contextual Info: SSO-AD-230 NIR-TO52-S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ? 760-910 nm high speed, low noise 230 µm diameter active area low slope multiplication curve Package TO52 S1 : Parameters: active area dark current 1) (M=100)

nir source

Contextual Info: SSO-AD-230-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance

APD 1300 2,5 GHz

Abstract: JDSU avalanche photodiode ingaas ghz JDSU ERM ingaas apd photodetector apd gain control InGaAs 1550 photodiode transimpedance amplifier jdsu avalanche photodiode avalanche photodiode jdsu photodetector apd dwdm
Contextual Info: Product Bulletin 10 Gb/s Automatic Gain Control AGC APD Receiver Module ERM 598 The ERM 598 is a 10 Gb/s avalanche photodiode receiver with automatic gain control (AGC) for long-haul SONET/SDH OC-192/STM-64 DWDM applications. The receiver module integrates a low capacitance, low dark current

avalanche photodiode receiver

Abstract: JDSU ERM InGaAs apd photodiode ingaas apd photodetector avalanche photodiode ghz InGaAs APD, 10 Gb/s, -30 dBm 877-550-JDSU transimpedance amplifier 7.5 GHz 10 gb APD receiver APD 1550 nm photodetector
Contextual Info: Product Bulletin ERM 598 10 Gb/s Automatic Gain Control AGC APD Receiver Module The ERM 598 is a 10 Gb/s avalanche photodiode receiver with automatic gain control (AGC) for long-haul SONET/SDH OC-192/STM-64 DWDM applications. The receiver module integrates a low capacitance, low dark current

Contextual Info: PLA-200 & PLA-280: High Sensitivity Large Area APD Components Product Features • 80 or 200 µm InGaAs APD  Small form-factor design  Low dark current  High reliability, epoxy free, hermetic packaging  High responsivity in the 0.95-1.65 um wavelength

avalanche photodiode noise factor

Contextual Info: SSO-AD-230-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR

Avalanche photodiode APD

Contextual Info: SSO-AD-230-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1 TO52 : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR

Detectors in communication

Abstract: InGaAs apd photodiode BPX65 high sensitive AAS-100 InGaAs-300L fiber optic detectors Photodiode laser detector BPX-65 ingaas apd photodetector UDT Sensors
Contextual Info: FIBER OPTIC SERIES APPLICATIONS FEATURES • Fiber Optic Communication Links • Speeds in sub ns • Video Systems • High gain • Laser Monitoring Systems • Low dark current • Computers and Peripherals • Low capacitance • Industrial Controls • TO-46 metal can

Photodiode laser detector BPX-65

Abstract: BPX65 amplifier UDT Sensors avalanche photodiode bias InGaAs apd photodiode power amplifier optic fiber photodiode BPX65
Contextual Info: FIBER OPTIC SERIES APPLICATIONS FEATURES • Fiber Optic Communication Links • Speeds in sub ns • Video Systems • High gain • Laser Monitoring Systems • Low dark current • Computers and Peripherals • Low capacitance • Industrial Controls • TO-46 metal can

mitsubishi APD

Abstract: Photodiode apd "InGaAs APD" InGaAs Photodiode 1550nm apd 2.5 g 1550nm apd 1300nm
Contextual Info: • G01Û35T GT b ■ MITSUBISHI OPTICAL DEVICES FU-318AP/FU-318SAP InGaAs APD MODULE FOR LONG WAVELENGTH BAND DESCRIPTION FEATURES The FU-318AP/318SAP series avalanche photodiode • Low-dark current (3nA) (APD) modules are designed fo r use in fibe r testing

SSO-AD-500-TO52i

Contextual Info: SSO-AD-500-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR

Contextual Info: SSO-AD-1100-TO5i Avalanche Photodiode Special characteristics High gain at low bias voltage Fast rise time 1130 µm diameter active area low capacitance Parameters: active area 1 dark current M=100) 1) Total capacitance (M=100) 2) Break down UBR (at ID=2µA)