LOW NOISE, FET Search Results

Contextual Info: FETs INDEX LOW NOISE FETs ♦ EC1840 - 40GHz LOW NOISE FE T . 85 NEW ♦ EC2623/TC2623 - 12GHz SUPER LOW NOISE H E M T.95 NEW ♦ EC2827 - 40GHz SUPER LOW NOISE H E M T . 99

16PIN

Abstract: CXG1014N
Contextual Info: CXG1014N 1.5 GHz Low Noise Amplifier/Down Conversion Mixer Description The CXG1014N is a low noise amplifier/down conversion mixer MMIC, designed using the Sony’s GaAs J-FET process. Features • Low noise NF=1.85 dB Typ. at 1.49 GHz (low noise amplifier)

Contextual Info: ONY I_ CXG1014N 1.5 GHz Low Noise Amplifier/Down Conversion Mixer Description The CXG1014N is a low noise amplifier/down conversion mixer MMIC, designed using the Sony’s GaAs J-FET process. Features • Low noise NF=1.85 dB Typ. at 1.49 GHz (low noise amplifier)

CFH120-08

Contextual Info: CFH 120-08 Datasheet Low Noise pHEMT Packaged FET Description: The CFH 120-08 is a high linearity, very low noise pHEMT FET for general purpose, low noise front-end applications. Noise figures as low as 0.65 dB with associated gain of 12 dB are achievable at 12 GHz

Contextual Info: CFH 120-08 Datasheet Low Noise pHEMT Packaged FET Description: The CFH 120-08 is a high linearity, very low noise pHEMT FET for general purpose, low noise front-end applications. Noise figures as low as 0.65 dB with associated gain of 12 dB are achievable at 12 GHz

Contextual Info: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100 Features • Low Noise Figure: 0.5 dB Typical at 4 GHz • Low Bias: VDS = 2 V, IDS = 25 mA chip. Its premium noise figure makes this device appropriate for use in the first stage of low noise

MAX6126

Abstract: APP3657 MAX4475 MAX8887 ultralownoise op-amp LDO application note AN3657 up/K 3657
Contextual Info: Maxim > App Notes > Amplifier and Comparator Circuits Power-Supply Circuits Keywords: low-dropout regulator, LDO, RC filter, voltage reference, low noise Dec 22, 2005 APPLICATION NOTE 3657 Ultra-Low-Noise LDO Achieves 6nV/√Hz Noise Performance Abstract: This ultra-low-noise LDO combines low-noise components with filtering to achieve an output noise

ATF-10100

Abstract: ATF-10100-GP3 ATF10100
Contextual Info: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100 Features • Low Noise Figure: 0.5 dB Typical at 4 GHz • Low Bias: VDS = 2 V, IDS␣ =␣ 25 mA chip. Its premium noise figure makes this device appropriate for use in the first stage of low noise

2SK170

Abstract: LSK170 ultra low idss 2SK170C JFET -40v LSK170C replacement 2sk170 2SK170 TO92 LSK389 equivalent lsk170a
Contextual Info: LSK170 ULTRA LOW NOISE LOW CAPACITANCE J-FET Replace discontinued Toshiba 2SK170 with LSK170 The 2SK170 / LSK170 is a 1nV/√Hz low capacitance JFET Optimized to provide low noise at both high and low frequency with a narrow range of IDSS and low capacitance. The 2SK170 / LSK170’s low noise to

replacement 2sk170

Abstract: lsk170 2sk170 lsk389
Contextual Info: LSK170 ULTRA LOW NOISE LOW CAPACITANCE J-FET Replace discontinued Toshiba 2SK170 with LSK170 The 2SK170 / LSK170 is a 1nV/√Hz low capacitance JFET Optimized to provide low noise at both high and low frequency with a narrow range of IDSS and low capacitance. The 2SK170 / LSK170’s low noise to

A14129

Abstract: A1252 A2706
Contextual Info: H Avantek Products Low Noise Surface Mount Amplifier 2000 to 6000 MHz Technical Data PPA-6213 Features Description Pin Configuration • Ultra Low Noise: 2.0 dB Typ The PPA-6213 is low current, high gain, low noise RF amplifier using HP GaAs FET technology and

V64 SOT 23

Abstract: 16118 transistor marking v64 ghz NE34018-TI-63-A NE34018-TI-64-A NE34018 NE34018-A marking V64 sot343
Contextual Info: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 20 mA FEATURES • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) • LOW NOISE FIGURE: 0.6 dB typical at 2 GHz NE34018 25 4 Noise Figure, NF (dB)

mgf4941al

Abstract: MITSUBISHI electric R22 GD-32
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> Preliminary MGF4941AL 19/Jan./2007 SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure

GD-32

Abstract: mgf4941al fet K 727
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> Dec./2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz

MGF4941AL

Abstract: MGF4941 GD-32
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> Preliminary MGF4941AL 26/Dec./2006 SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. ③ FEATURES Low noise figure

top 261

Abstract: GD-32 mgf4941al InGaAs HEMT mitsubishi
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz

A7628

Abstract: a1137 transistor a979 8055 transistor
Contextual Info: H Avantek Products Ultra-Low Noise Surface Mount Amplifier 2000 to 4000 MHz Technical Data PPA-4213 Features Description Pin Configuration • Ultra Low Noise: 1.2 dB Typ The PPA-4213 is low current, high gain, ultra-low noise RF amplifier using HP GaAs FET technology

40MAG

Contextual Info: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER _ New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) LOW NOISE FIGURE: 0.6 dB typical at 2 GHz CD CO ;u HIGH ASSOCIATED GAIN:

Contextual Info: MGA-637P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-637P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . This LNA has low noise and high linearity achieved through the

Contextual Info: MGA-638P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-638P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . This LNA has low noise and high linearity achieved through the

uPC 1207

Abstract: ax nec hen vd 4074g GGG 92 kss 210 PC4074 PC4084 uPC4074 4074C
Contextual Info: DATA SHEET à BIPOLAR ANALOG INTEGRATED CIRCUIT PC4074 LOW NOISE J-FET INPUT QUAD OPERATIONAL AMPLIFIER DESCRIPTION FEATURES The J-FET input operational am plifier of the • Low noise: en = 18 nV/VHz TYP. ,uPC4074 is designed as low noise version o f the

Contextual Info: 10NY I_ CXG1013N 1.7 to 2.0 GHz Low Noise Amplifier/Down Conversion Mixer Description The CXG1013N is a low noise amplifier/down conversion mixer MMIC,designed using the Sony's GaAs J-FET process. SSOP-16P-LQ1 Plastic Features • Low noise NF=1.8 dB (Typ.)

Contextual Info: DATA SHEET à BIPOLAR ANALOG INTEGRATED CIRCUIT PC4074 LOW NOISE J-FET INPUT QUAD OPERATIONAL AMPLIFIER DESCRIPTION FEATURES The J-FET input operational am plifier of the • Low noise: en = 18 nV/VHz TYP. ,uPC4074 is designed as low noise version o f the

Contextual Info: VCA2613 VCA 261 3 SBOS179D – DECEMBER 2000 – REVISED OCTOBER 2004 Dual, VARIABLE GAIN AMPLIFIER with Low-Noise Preamp FEATURES DESCRIPTION ● LOW NOISE PREAMP: Low Input Noise: 1.0nV/√Hz Active Termination Noise Reduction Switchable Termination Value