LOW NOISE P-CHANNEL FET Search Results

KU 05 G22

Abstract: pt 7313
Contextual Info: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB T Y P at 12 GHz » HIGH ASSOCIATED GAIN: 12.0 dB T Y P at f = 12 GHz m • GATE LENGTH: < 0.20 \im

3SK164

Abstract: UV 615 TUNER tuner uv 915 e tv sony 1435 tuner uv 915 3sk164-M TA 7332 tuner uv 615 dual-gate 3539 sony
Contextual Info: SONY C O R P / C O M P O N E N T PR OD S IflE D • 0305303 00051^4 3SK164/-M SO N Y GaAs N-Channel Dual-Gate MES FET t P ack a g e O utline Description The 3SK 164 /-M is a G aAs N-channel Dual-Gate M ES FET for low noise U H F amplifiers and mixers. Low noise,

T572S

Abstract: tv sony 1435 J50 O 26 dual-gate 17458 3SK147
Contextual Info: 77 SO N Y C O R P / C O M P O N E N T PR O D S DE 1ñ3fl23fl3 OOOOEEfl fl | ~ 0 ^ 3 1 ’* 2 5 GaAs N-channel Dual-Gate MES FET D e scrip tio n : The 3SK147 is a GaAs N-channel Dual-Gate MES FET for low noise UHF amplifiers and mixers. Low noise, high gain

KSK30

Abstract: 100K0 20H2
Contextual Info: SAMSUNG SEMICONDUCTOR INC^ KSK30 IME D §711^142 □OGb'HB | *P* SILICON N-CHANNEL JUNCJION FET LOW NOISE PRE-AMP. USE High Input Impedance: l,„= 1nA MAX Low Noise: NF=0.5dB (TYP) High Voltage: Vga, = -5 0 V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic

Contextual Info: Ordering number : EN 2841 _ 2 S K 9 3 2 No.2841 N-Channel Junction Silicon FET High-Frequency Low-Noise Amp Applications A p p lic atio n s • AM tuner RF amp, low-noise amp F e a tu re s • Adoption of FBET process •Large lyrsl • Small Ciss

PT 4207

Contextual Info: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz 24 VDS = 2 V ID = 10 mA • HIGH ASSOCIATED GAIN: 12.0 dB T Y P a t f = 12 GHz

NE5814

Abstract: NE5814M14 HS350 microphone sensor
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NE5814M14 P-CHANNEL LOW NOISE MOS FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF MICROPHONE 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG DESCRIPTION The NE5814M14 is a P-channel silicon MOS FET designed for use as impedance converter for microphone.

cp 035 sanyo

Abstract: bau 95 2SK932
Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7 cn 7 0 7 t 000 3=1130 T 2SK932 T - 3 1 -2 5 N-Channel Junction Silicon FET 2050 High-Frequency Low-Noise Amp Applications 2841 A p p lic a tio n s • AM tu n er R F am p, low-noise am p F e a tu re s • Adoption o f F B E T process

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> bEM'ìfiS'ì □□176SC 1 713 MGF1425B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 2 5 B low -noise GaAs FET w ith an N -channel S chottky gate is designed fo r use in Ku band amplifiers. FEATURES • Low noise figure N F mln = 1.4 T Y P . @ f = 12 G H z

cd 7678

Abstract: 3SK149 N-Channel, Dual-Gate FET 6908 dual-gate
Contextual Info: - -r.r. „ a m m i M m v a i m V , SONY COR P/CO MP ON EN T PRODS ~77 T '3 h A S DÉTjñ3ñE3B3 □□□Q220 3 3SK149 GaAs N-channel Dual-Gate MES FET Description: The 3SK149 is a GaAs N-channel Dual-Gate MES FET for low noise UHF amplifiers. Low noise and high gain

2SK4271

Abstract: ikv hd 2SK427 1404B
Contextual Info: Ordering n u m b er:E N 1404B ._ 2SK427 NO.1404B N-Channel Junction Silicon FET AM Tuner RF Amp Applications A p p licatio n s • AM tuner RF amps and low-noise amps. F e a tu re s • Large I y f8 I . • Ultralow noise figure. • Small Crss.

Contextual Info: |\|EC SUPER LOW NOISE C TO KA BAND AMPLIFIER NE27200 N-CHANNEL HJ FET CHIP FEATURES_ OUTLINE DIMENSIONS Units in nm • SUPER LOW NOISE FIGURE: 0.45 d B T Y P a t 12 GHz CHIP • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz • GATE LENGTH: Lg = 0.20 nm

SGM2016M

Abstract: SGM2016P Sony Semiconductor sony tuners HA 1166 NF 935 b 772 p dual-gate E-9217 sony 174A
Contextual Info: SONY SGM2016M/P1 GaAs N-channel Dual-Gate MES FET_ |For the availability of this product, please contact the sales office. Description Package Outline Unit : mm The SGM2016M/P is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This

Junction-FET

Abstract: 2SJ164 2SK1104 SC-72
Contextual Info: Silicon Junction FETs Small Signal 2SJ164 Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2 • Pin Name

2SJ0364

Abstract: 2SJ364
Contextual Info: Silicon Junction FETs Small Signal 2SJ0364 (2SJ364) Silicon P-Channel Junction FET For analog switch (0.425) unit: mm 0.3+0.1 –0.0 • Features ● Low ON-resistance ● Low-noise characteristics 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5° 1.25±0.10

2SK1104

Abstract: 2SJ0164 2SJ164
Contextual Info: Silicon Junction FETs Small Signal 2SJ0164 (2SJ164) Silicon P-channel junction FET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits Complementary to 2SK1104 (0.8) 0.75 max. • Features 15.6±0.5 • Low ON resistance • Low-noise characteristics

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2 • Pin Name

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Features ■ Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2

LTC1429

Contextual Info: "Inductorless" DC/DC Converter Solutions LTC1261/LTC1429 Regulated Output Switched-Capacitor Inverters 3.3V Input, -4.5 Output GaAs FET Bias Generator LTC1550/LTC1551 Low Noise Regulated Output Switched Capacitor CHA P-CHANNEl 'ER:SWITCH POWER a LTC1550-4

TC2260

Abstract: KU 506 transistor NEC D 809 F NE76083A low noise FET NEC U C band FET transistor s-parameters
Contextual Info: DATA SHEET GaAs MES FET NE76083A C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • P A C K A G E D IM E N S IO N S Low noise figure Unit : mm NF = 1.6 dB TYP. at f = 12 GHz (NE76083A) NF = 2.4 dB MAX. at f = 12 GHz (NE76083A-2.4) • High associated gain

Contextual Info: DATA SHEET G a As MES FET NE76083A C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • P A C K A G E DIM EN SIO N S Low noise figure Unit : mm NF = 1.6 dB TYP. at f = 12 GHz (NE76083A) NF = 2.4 dB MAX. at f = 12 GHz (NE76083A-2.4) • 1,88±0.3

2SJ0364

Abstract: 2SJ364
Contextual Info: Silicon Junction FETs Small Signal 2SJ0364 (2SJ364) Silicon P-channel junction FET (0.425) Unit: mm For analog switch circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • Low ON resistance • Low-noise characteristics 0.9±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Package ■ Features • Low ON resistance • Low-noise characteristics ■ Absolute Maximum Ratings Ta = 25°C