LOW POWER SCHOTTKY INVERTERS Search Results
LOW POWER SCHOTTKY INVERTERS Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| NFM31PC276D0E3L | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose |
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| NFMJMPC156R0G3D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose |
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| NFMJMPL226R0G5D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose |
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| MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
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| MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN |
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LOW POWER SCHOTTKY INVERTERS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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DM74AS157M
Abstract: DM74AS157N DM74AS158M DM74AS158N M16A N16A DM74AS157
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DM74AS157/DM74AS158 AS157 DM74AS157M DM74AS157N DM74AS158M DM74AS158N M16A N16A DM74AS157 | |
DM74ALS048
Abstract: DM54ALS04BJ DM74ALS DM74ALS04BM DM74ALS04BN J14A M14A N14A
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DM54ALS04B/DM74ALS04B DM54ALS04B DM74ALS04B DM74ALS048 DM54ALS04BJ DM74ALS DM74ALS04BM DM74ALS04BN J14A M14A N14A | |
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Contextual Info: R C H II- D S E M I C O N D U C T O R tm DM74 AS157/DM74AS158 Quad 1 of 2 Line Data Selector/Multiplexer General Description • Functionally and pin for pin compatible with Schottky, low power Schottky, and advanced low power Schottky TTL counterpart ■ Improved AC performance over Schottky, low power |
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AS157/DM74AS158 AS157 AS158 AS157 DS006290-2 DS006290-3 V91-N peen-91. | |
power inverters free circuit diagramContextual Info: 157*158 National Ææ Semiconductor DM74AS157/DM74AS158 Quad 1 of 2 Line Data Selector/Multiplexer General Description • Advanced oxide-isolated, ion-implanted Schottky TTL process ■ Functionally and pin for pin compatible with Schottky, low power Schottky, and advanced low power Schottky |
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DM74AS157/DM74AS158 AS157 AS158 DM74AS158 AS157 power inverters free circuit diagram | |
1N5819 SOD-123
Abstract: Reverse polarity pulse plating 1N5819* diode 1N5819 SOD123 1N5819 1N5819-CA2-R 1N5819L 1N5819L-CA2-R QW-R601-008 A1N5819
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1N5819 OD-123 1N5819L 1N5819-CA2-R 1N5819L-CA2-R QW-R601-008 1N5819 SOD-123 Reverse polarity pulse plating 1N5819* diode 1N5819 SOD123 1N5819 1N5819-CA2-R 1N5819L 1N5819L-CA2-R A1N5819 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N5819 DIODE SCHOTTKY BARRIER DIODE FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling |
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1N5819 OD-123 1N5819G-CA2-R QW-R601-008 | |
1N5819* diode
Abstract: 1N5819 SOD-123 1N5819 diode 1N5819 SOD123 DIODE 1N5819 dc transistor r601 DIODE 3a sod-123 DIODE 1n5819 1N5819 1N5819L-CA2-R
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1N5819 OD-123 1N5819L-CA2-R 1N5819G-CA2-R QW-R601-008 1N5819* diode 1N5819 SOD-123 1N5819 diode 1N5819 SOD123 DIODE 1N5819 dc transistor r601 DIODE 3a sod-123 DIODE 1n5819 1N5819 1N5819L-CA2-R | |
all diode 1n5817 ListContextual Info: 1N5817–1N5819 Vishay Lite–On Power Semiconductor 1.0A Schottky Barrier Rectifiers Features D Schottky barrier chip D Guard ring die construction for transient protection D High surge capability D Low power loss, high efficiency D For use in low voltage, high frequency inverters, |
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1N5817 1N5819 1N5818 1N581tances. D-74025 24-Jun-98 all diode 1n5817 List | |
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Contextual Info: G10100CTFW SCHOTTKY BARRIER RECTIFIERS FEATURES • Trench Schottky technology • Low power loss, high efficiency • Low forward drop voltage • For use in low voltage, high frequency inverters, free REVERSE VOLTAGE FORWARD CURRENT – 100 Volts – 10 Amperes |
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G10100CTFW ITO-220AB | |
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Contextual Info: G40100CTFW SCHOTTKY BARRIER RECTIFIERS FEATURES • Trench Schottky technology • Low power loss, high efficiency • Low forward drop voltage • For use in low voltage, high frequency inverters, free REVERSE VOLTAGE FORWARD CURRENT – 100 Volts – 40 Amperes |
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G40100CTFW ITO-220AB 70grams | |
g20100ctfwContextual Info: G20100CTFW SCHOTTKY BARRIER RECTIFIERS FEATURES • Trench Schottky technology • Low power loss, high efficiency • Low forward drop voltage • For use in low voltage, high frequency inverters, free REVERSE VOLTAGE FORWARD CURRENT – 100 Volts – 20 Amperes |
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G20100CTFW ITO-220AB g20100ctfw | |
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Contextual Info: G30100CTFW SCHOTTKY BARRIER RECTIFIERS FEATURES • Trench Schottky technology • Low power loss, high efficiency • Low forward drop voltage • For use in low voltage, high frequency inverters, free REVERSE VOLTAGE FORWARD CURRENT – 100 Volts – 30 Amperes |
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G30100CTFW ITO-220AB | |
MARKING FZ
Abstract: SBL530 SBL545 SBL550 SBL560
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SBL530 SBL560 MIL-STD-202, SBL545 SBL550 300ns DS23043 SBL530-SBL560 MARKING FZ SBL545 SBL560 | |
SDB1080Contextual Info: SDB1080PH Semiconductor Schottky Barrier Rectifier 80V, 10A POWER SCHOTTKY RECTIFIER Features Low forward voltage drop Low power loss and High efficiency Low leakage current High surge capacity Full lead Pb -free and RoHS compliant device |
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SDB1080PH O-220F-2L SDB1080PH KSD-D0Q018-001 SDB1080 | |
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MBR1630
Abstract: MBR1660
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MBR1630 MBR1660 MIL-STD-202, DS23011 MBR1630-MBR1660 MBR1660 | |
3045PT
Abstract: 3040PT 3060PT MBR3030PT MBR3060PT
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MBR3030PT MBR3060PT MIL-STD-202, DS23017 3045PT 3040PT 3060PT MBR3060PT | |
mbr schottky
Abstract: 4050PT A4030P schottky rectifier mbr 4045PT MBR4030PT MBR4060PT Y10050
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MBR4030PT MBR4060PT MIL-STD-202, DS23019 mbr schottky 4050PT A4030P schottky rectifier mbr 4045PT MBR4060PT Y10050 | |
MBR730
Abstract: MBR760
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MBR730 MBR760 MIL-STD-202, DS23007 MBR730-MBR760 MBR760 | |
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Contextual Info: October 1994 DM74ALS157/DM74ALS158 Quad 1 of 2 Line Data Selector/Multiplexer • Advanced oxide-isolated, ion-implanted Schottky TTL process ■ Functionally and pin for pin compatible with Schottky and low power Schottky TTL counterpart ■ Improved AC performance over Schottky and low pow |
OCR Scan |
DM74ALS157/DM74ALS158 | |
Date Code Marking STMicroelectronics diode S56Contextual Info: STPS5L60 Power Schottky rectifier Features ● Negligible switching losses ● Low forward voltage drop for higher efficiency ● Low thermal resistance ● Avalanche capability specified A A K K Description Power Schottky rectifier suited for switch mode |
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STPS5L60 STPS5L60S DO-201AD Date Code Marking STMicroelectronics diode S56 | |
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Contextual Info: SB8150DC – SB8200DC WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip C Guard Ring Die Construction for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency |
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SB8150DC SB8200DC PAK/TO-263 PAK/TO-263, | |
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Contextual Info: SD320YS – SD3100YS WTE POWER SEMICONDUCTORS 3.0A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier chip A C ! ! ! ! ! ! Guard Ring Die Construction B Low Profile Package D High Surge Current Capability Low Power Loss, High Efficiency |
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SD320YS SD3100YS MIL-STD-750, | |
SB16100DC
Abstract: SB1620DC
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SB1620DC SB16100DC PAK/TO-263 D2PAK/TO-263, SB16100DC SB1620DC | |
SB8150DC
Abstract: SB8150DC-T3
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SB8150DC PAK/TO-263 D2PAK/TO-263, SB8150DC SB8150DC-T3 | |