LOW VCE 16A Search Results

LOW VCE 16A Result Highlights (5)

Part	Manufacturer	Description
NFM31PC276D0E3L	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
NFMJMPC156R0G3D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
NFMJMPL226R0G5D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
TCR3DG28	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 2.8 V, 300 mA, WCSP4E
TCR5RG28A	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F

LOW VCE 16A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
AN-994 Abstract: C-150 HF03D060ACE Contextual Info: PD - 95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • VCES = 600V C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB O-262 IRGB8B60KPbF IRGS8B60KPbF AN-994. AN-994 C-150 HF03D060ACE	PDF
AN-994 Abstract: C-150 IRGS8B60K IRGSL8B60K Contextual Info: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.	Original	5645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB IRGB8B60KPbF IRGS8B60K O-262 IRGSL8B60K AN-994. AN-994 C-150 IRGS8B60K IRGSL8B60K	PDF
AN-994 Abstract: C-150 IRGS8B60K IRGSL8B60K Mbl transistor Contextual Info: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.	Original	5645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB IRGB8B60KPbF IRGS8B60K O-262 IRGSL8B60K O-220AB AN-994 C-150 IRGS8B60K IRGSL8B60K Mbl transistor	PDF
Contextual Info: PD - 95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.	Original	95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB O-262 IRGB8B60KPbF IRGS8B60KPbF AN-994.	PDF
Contextual Info: IXSH 16N60U1 VCES = 600V = 16A IC25 VCE sat typ = 1.8V Low VCE(sat) IGBT with Diode Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous	Original	16N60U1 O-247	PDF
Contextual Info: IXSH 16N60U1 VCES = 600V = 16A IC25 VCE sat typ = 1.8V Low VCE(sat) IGBT with Diode Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous	Original	16N60U1	PDF
IRFI840G Abstract: C-150 IRGIB7B60KD Contextual Info: PD - 94620B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	94620B IRGIB7B60KD O-220AB IRFI840G O-220AB IRFI840G C-150 IRGIB7B60KD	PDF
IRFI840G Abstract: ic MARKING QG C-150 IRGIB7B60KD Contextual Info: PD - 94620B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	94620B IRGIB7B60KD O-220AB O-220AB IRFI840G ic MARKING QG C-150 IRGIB7B60KD	PDF
Contextual Info: PD - 94545A IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	4545A IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB	PDF
Contextual Info: PD - 94620B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	94620B IRGIB7B60KD O-220AB O-220AB	PDF
Contextual Info: PD - 94545 IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB AN-994.	PDF
ica700 Abstract: C-150 54AVP Contextual Info: PD - 95195 IRGIB7B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	IRGIB7B60KDPbF O-220AB O-220AB ica700 C-150 54AVP	PDF
B1370 Abstract: B1370 transistor r b1370 transistor transistor b1370 b1370, transistor b1370 e Contextual Info: PD - 94620A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	4620A IRGIB7B60KD O-220AB IRFI840G B1370 B1370 transistor r b1370 transistor transistor b1370 b1370, transistor b1370 e	PDF
C-150 Abstract: IRFI840G IRGIB7B60KD Contextual Info: PD - 94620 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	IRGIB7B60KD O-220AB IRFI840G O-220AB C-150 IRFI840G IRGIB7B60KD	PDF

16N60 Abstract: IXSP16N60 IXSA16N60 Contextual Info: Preliminary Data Sheet IXSA 16N60 IXSP 16N60 Low VCE sat IGBT V CES = 600V I C25 = 16A VCE(sat)typ = 1.8V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	16N60 16N60 IXSP16N60 IXSA16N60	PDF
TO-220AB transistor package Abstract: C-150 IRGB8B60K IRGS8B60K IRGSL8B60K Contextual Info: PD - 94545B IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 8.0A, TC=100°C	Original	94545B IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB TO-220AB transistor package C-150 IRGB8B60K IRGS8B60K IRGSL8B60K	PDF
C-150 Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K Contextual Info: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C	Original	94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 AN-994. C-150 IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K	PDF
Contextual Info: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C	Original	94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 AN-994.	PDF
C-150 Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K TO-220AB transistor package 11mH Contextual Info: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C	Original	94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB C-150 IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K TO-220AB transistor package 11mH	PDF
Contextual Info: PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR C Features • • • • • • • VCES = 600V Low VCE ON Trench IGBT Technology Maximum Junction temperature 150 °C 3 S short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient	Original	IRG7SC12FPbF EIA-418.	PDF
Contextual Info: PD - 95195 IRGIB7B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	IRGIB7B60KDPbF O-220AB O-220AB	PDF
IRG7SC12FPBF Abstract: C-150 IRF530S irg7sc12 Contextual Info: PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR C Features • • • • • • • Low VCE ON Trench IGBT Technology Maximum Junction temperature 150 °C 3 S short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution	Original	IRG7SC12FPbF EIA-418. IRG7SC12FPBF C-150 IRF530S irg7sc12	PDF
Contextual Info: PD - 95645 IRGB8B60KPbF IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features C • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. •TO-220 is available in PbF as a Lead-Free.	Original	O-220 IRGB8B60KPbF IRGS8B60K IRGSL8B60K O-220AB IRGS8B60K O-262	PDF
40n60 igbt Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60 Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263	Original	O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60	PDF

LOW VCE 16A Search Results

LOW VCE 16A Result Highlights (5)

LOW VCE 16A Datasheets Context Search

AN-994

AN-994

AN-994

IRFI840G

IRFI840G

ica700

B1370

C-150

16N60

TO-220AB transistor package

C-150

C-150

IRG7SC12FPBF

40n60 igbt