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    LOW VCE SAT PNP Search Results

    LOW VCE SAT PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFM31PC276D0E3L
    Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    NFMJMPC156R0G3D
    Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    NFMJMPL226R0G5D
    Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    2SA1213
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA2070
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    LOW VCE SAT PNP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NSV20200

    Contextual Info: NSS20200LT1G, NSV20200LT1G 20 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


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    NSS20200LT1G, NSV20200LT1G NSS20200L/D NSV20200 PDF

    NSS352

    Contextual Info: NSS35200MR6T1G, SNSS35200MR6T1G 35 V, 5 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


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    NSS35200MR6T1G, SNSS35200MR6T1G NSS35200MR6/D NSS352 PDF

    Contextual Info: NSS40300DDR2G Dual 40 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


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    NSS40300DDR2G NSS40300D/D PDF

    nss40600cf8t1g

    Contextual Info: NSS40600CF8T1G, SNSS40600CF8T1G 40 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


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    NSS40600CF8T1G, SNSS40600CF8T1G NSS40600CF8/D nss40600cf8t1g PDF

    Contextual Info: NSS40400CF8T1G Product Preview 40 V, 7 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


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    NSS40400CF8/D PDF

    Contextual Info: NSS1C200MZ4, NSV1C200MZ4 100 V, 2.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


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    NSS1C200MZ4/D PDF

    vmt3

    Abstract: NPN, PNP for 500ma, 30v PD 680 2SA1577 2SA1774 2SA2018 2SA2030 2SB1197K 2SB1689 2SB1690K
    Contextual Info: We achieved to develop the lowest VCE sat for small surface mount packages. VMT3 size and EMT6 size are available for those Low VCE(sat) transistors. Features Low VCE(sat) Transistors in small surface mount packages! 1 2SA2018 2SA2030 2SA1774 VCE(sat)(V)


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    2SA2018 2SA2030 2SA1774 2SB1689 2SA1577 500mA 2SB1690K 2SB1197K SC-75A) SC-70) vmt3 NPN, PNP for 500ma, 30v PD 680 2SA1577 2SA1774 2SA2018 2SA2030 2SB1197K 2SB1689 2SB1690K PDF

    Contextual Info: NSS1C200L, NSV1C200L 100 V, 2.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


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    NSS1C200L, NSV1C200L NSS1C200L/D PDF

    Contextual Info: NSS40200UW6T1G, NSV40200UW6T1G 40 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


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    NSS40200UW6T1G, NSV40200UW6T1G NSS40200UW6/D PDF

    Contextual Info: NSS1C200MZ4, NSV1C200MZ4 100 V, 2.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


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    NSS1C200MZ4/D PDF

    SNSS35200MR6T1G

    Contextual Info: NSS35200MR6T1G, SNSS35200MR6T1G 35 V, 5 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


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    NSS35200MR6T1G, SNSS35200MR6T1G NSS35200MR6/D PDF

    Contextual Info: NSS35200MR6T1G, SNSS35200MR6T1G 35 V, 5 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


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    NSS35200MR6T1G, SNSS35200MR6T1G NSS35200MR6/D PDF

    Contextual Info: NSS35200MR6T1G, SNSS35200MR6T1G 35 V, 5 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


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    NSS35200MR6T1G, SNSS35200MR6T1G NSS35200MR6/D PDF

    NSS20300MR6T1G

    Contextual Info: NSS20300MR6T1G Product Preview 20 V, 5 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


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    NSS20300MR6T1G NSS20300MR6/D NSS20300MR6T1G PDF

    marking VE

    Contextual Info: NSS12100XV6T1G Product Preview 12 V, 1 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


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    NSS12100XV6T1G NSS12100XV63/D marking VE PDF

    Contextual Info: NSS20200LT1G, NSV20200LT1G 20 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


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    NSS20200LT1G, NSV20200LT1G NSS20200L/D PDF

    Contextual Info: NSS40200LT1G, NSV40200LT1G 40 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


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    NSS40200LT1G, NSV40200LT1G NSS40200L/D PDF

    NSV40200LT1G

    Contextual Info: NSS40200LT1G, NSV40200LT1G 40 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


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    NSS40200LT1G, NSV40200LT1G NSS40200L/D PDF

    NSS40300MZ4T1G

    Abstract: NSS40300MZ4 NSS40300MZ4T3G
    Contextual Info: NSS40300MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


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    NSS40300MZ4 NSS40300MZ4/D NSS40300MZ4T1G NSS40300MZ4 NSS40300MZ4T3G PDF

    SMD TRANSISTOR MARKING 2A

    Abstract: MARKING SMD PNP TRANSISTOR 2a SMD TRANSISTOR 2A MARKING SMD PNP TRANSISTOR R smd 2a transistor 2A marking transistor transistor marking 2a SMD TRANSISTOR MARKING 2A pnp TRANSISTOR SMD 1A TRANSISTOR SMD PNP 1A
    Contextual Info: Transistors SMD Type Low VCE sat Transistor 2SB1424 Features Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics. PNP silicon transistor Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage


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    2SB1424 100MHz SMD TRANSISTOR MARKING 2A MARKING SMD PNP TRANSISTOR 2a SMD TRANSISTOR 2A MARKING SMD PNP TRANSISTOR R smd 2a transistor 2A marking transistor transistor marking 2a SMD TRANSISTOR MARKING 2A pnp TRANSISTOR SMD 1A TRANSISTOR SMD PNP 1A PDF

    NSV60600MZ4

    Abstract: NSV60600
    Contextual Info: NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G 60 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


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    NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G NSS60600MZ4/D NSV60600MZ4 NSV60600 PDF

    Contextual Info: NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G 60 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


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    NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G NSS60600MZ4/D PDF

    TSB1184A

    Abstract: TSB1184ACP
    Contextual Info: TSB1184A Low Vce sat PNP Transistor Pin Assignment: 1. Base 2. Collector 3. Emitter BVCEO = - 50V Ic = - 3A VCE (SAT), = - 0.3V(typ.) @Ic / Ib = - 2A / - 0.1A Features — Ordering Information Low VCE (SAT). Part No. — Excellent DC current gain characteristics


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    TSB1184A TSB1184ACP O-252 380uS, O-252 TSB1184A TSB1184ACP PDF

    NSS40300MZ4

    Abstract: NSS40300MZ4T1G NSS40300MZ4T3G
    Contextual Info: NSS40300MZ4 Preferred Device Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


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    NSS40300MZ4 NSS40300MZ4/D NSS40300MZ4 NSS40300MZ4T1G NSS40300MZ4T3G PDF