ALC271X
Abstract: alc271 SY8033 SY8033BDBC ar8132l MP2121 tps51125 AON7408L nav50 ALC271X-GR
Text: A B C D E PJP1 ZZZ1 PCB D0DAZ@ ZZZ3 ZZZ4 LA-6091P D0DA@ LS-6094P D0DA@ ZZZ5 45@ DCIN DC301008S00 LS-6095P D0DA@ 1 1 ZZZ2 PCB E0DAZ@ ZZZ6 ZZZ8 LA-6091P E0DA@ LS-6096P E0DA@ ZZZ7 LS-6097P E0DA@ ZZZ9 ZZZ10 LS-6098P E0DA@ LS-6099P E0DA@ Compal Confidential 2 2
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LA-6091P
LS-6094P
LS-6095P
DC301008S00
ZZZ10
LS-6096P
LS-6097P
LS-6098P
LS-6099P
ALC271X
alc271
SY8033
SY8033BDBC
ar8132l
MP2121
tps51125
AON7408L
nav50
ALC271X-GR
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KB926
Abstract: AC82PM45 LA-5081P tps51620 sis412 kiwa5 la-5081p AC82GM45 NV10M-GS intel GM45 cantiga n10m-ge1-s
Text: A B C ZZZ ZZZ1 ZZZ2 ZZZ3 PCB LA-5081P LS-5081P LS-5082P D E 1 1 DAZ@ DAZ@ DAZ@ KIWA5/A6 2 2 Schematics Document Mobile Penryn uFCPGA with Intel Cantiga_GM/PM+ICH9-M core logic 3 3 REV:1.0 4 4 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification
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LA-5081P
LS-5081P
LS-5082P
KB926
AC82PM45
LA-5081P
tps51620
sis412
kiwa5 la-5081p
AC82GM45
NV10M-GS
intel GM45 cantiga
n10m-ge1-s
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3.2768MHz crystal
Abstract: AT73501 32.768Mhz crystal AT90Sxx 258F
Text: 1 PRELIMINARY FEATURES Fulfills IEC requirements. 1036, class 1 accuracy Fulfills IEC 687, class 0.5 and class 0.2 accuracy, with external temperature
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1000Hz.
AT73501/AT73502
AT73500)
3.2768MHz crystal
AT73501
32.768Mhz crystal
AT90Sxx
258F
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is <DRAM MODULE MH16M9BDJA-5,-6,-7 FAST PAGE MODE 150994944-BIT 16777216-WORD BY 9-BIT) DYNAMIC RAM DESCRIPTION The MH16M9BDJA is 16777216-word by 9-bit dynamic RAM module. That module consists of eight industly 16M x 1 dynamic RAMs in SOJ.
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MH16M9BDJA-5
150994944-BIT
16777216-WORD
MH16M9BDJA
MH16M9BDJA-5
MH16M9BDJA-6
MH16M9BDJA-7
16K/I
30-pin
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is M5M4V4260TP-7,-8,-7S,-8S FAST PAGE MODE 4194304-BIT 262144-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs, PIN CONFIGURATION (TOP VIEW) fabricated with the high performance CMOS process, and is
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M5M4V4260TP-7
4194304-BIT
262144-WORD
16-BIT)
16-bit
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pin diagram of IC TLC271
Abstract: 7575JN
Text: ANALOG DEVICES □ FEATURES Fast Conversion Time: 5 j j ls On-Chip Track/Hold Low Total Unadjusted Error: 1LSB Full Power Signal Bandwidth: 50kHz Single + 5V Supply 100ns Data Access Time Low Power 15mW typ Low Cost Standard 18-Pin DIPs or 20-Terminal Surface Mount Packages
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AD7575
50kHz
100ns
18-Pin
20-Terminal
AD7575
50kHz
386mV/M-s
AD589
pin diagram of IC TLC271
7575JN
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is SRAM MODULE . MH5128BBNA-70L,-85L,-10L,-12L/ £ c,no'V A MH5128BBNA-70H,-85H,-10H,-12H 4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM c,o^c ' DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Both side, 2-Layer) The MH5128BBNA is a 4194304-bits CMOS static RAM
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MH5128BBNA-70L
-12L/
MH5128BBNA-70H
4194304-BIT
524288-WORD
MH5128BBNA
4194304-bits
524288-words
M5M51008BVP,
b2LH035
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burr-brown 710
Abstract: PSR 406
Text: COMPONENTS BURR-BROUN D CORP b u r r -b l l 7 3 1 3 LS DD1 S S 7 L 5 I _ ' J ' - 1 3 > -~ U \ r o w n I Ö MPY534/883B SERIES MPY534TD/883B MPY534TH/883B MPY534SD/883B MPY534SH/883B REVISION A JANUARY, 1989 Precision Military
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MPY534/883B
MPY534TD/883B
MPY534TH/883B
MPY534SD/883B
MPY534SH/883B
10MHz
MIL-STD-883
534/883B
T-73-29
15VDC
burr-brown 710
PSR 406
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ED0B
Abstract: L6450 l64550 microprocessor
Text: L S I LOGIC CORP 5304804 Ü | L S I 53Q4Ö04 LOGI C DDGDIta 1 LOGIC CORP 90D L64500 M IL-S T D -175 0 A Microprocessor 00962 LSI Logic Corporation 1551 McCarthy Blvd Milpitas CA 95035 408.433.8000 Telex 172153 Preliminary Description The LS I Logic L6 45 0 0 is a monolithic 1 . 5-micron
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L64500
16-bit
adva64550
ED0B
L6450
l64550 microprocessor
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33G PH DIODE
Abstract: PH 33G diode
Text: Thn% H E W L E T T 1"UM P A C K A R D 20 MBd High CMR Logic Gate Optocouplers Technical Data HCPL-2400 HCPL-2430 Features Applications Description • High Speed: 40 MBd Typical Data Rate • High Common Mode Rejection: HCPL-2400: 10 kV/|ls at v c m = 300 v Typical
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HCPL-2400
HCPL-2430
HCPL-2400:
UL1577
MIL-STD-1772
HCPL-540put
44475AM
001573b
33G PH DIODE
PH 33G diode
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is M 5 M 4 V 4 1 6 J , T P , R T - 6 , - 7 , - 8 , - 6 S , - 7 S , - 8 S FAST PAGE MODE 4194304-BIT 262144-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 262144-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and is
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4194304-BIT
262144-WORD
16-BIT)
16-bit
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MAX77100
Abstract: IC74 IC-74
Text: SANYO SEMICONDUCTOR CORP 53E TW OTb T> 0010S31 037 « T S A J r- H4>~ 0 7 — 0 7 MLC74HC76M No.3628 f CMOS High-Speed Standard Logic Dual J-K Flip-Flop with Reset and Set F e a tu re s • The MLC74HC76M consists of 2 identical J-K type flip-flops. • Uses CMOS silicon gate process technology to achieve operating speeds sim ilar to LS-TTL 74LS76
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0010S31
MLC74HC76M
MLC74HC76M
74LS76)
54LS/74LS
MLC74HC
MAX77100
IC74
IC-74
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vt237
Abstract: ECG1504 1058 ECG1604
Text: 17E P H I L I P S E C G INC b t S 3 ‘ïafl"0 Q D S M a S 4 T-73-53 ECG1504 Se m ico n d u cto rs V o ltage Level Ind, Dr, 5-Step Log Open Collector O utputs Features • 5 com parators to digitize logarithm ic analog input sig n a ls in 3-dB step in crem ents
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ECG1504
T-73-53
ECG1504
ECG1604
vt237
1058
ECG1604
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hef40668
Abstract: HEF4066BP HEF4066BT HEF4066B HEF4016B HEF4066BD hef4066be
Text: HEF4066B QU A D R U P L E B IL A T E R A L S W I T C H E S The H E F 4 0 6 6B has fo u r independent b ilateral analogue switches transm ission gates . Each sw itch has tw o in p u t/o u tp u t te rm in a ls (V /Z ) and an active H IG H enable in p u t (E). When E is connected to V q q
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HEF4066B
HEF4066B
HEF4016B
7Z74579
7Z74590
7Z79896
7Z79898
hef40668
HEF4066BP
HEF4066BT
HEF4066BD
hef4066be
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Untitled
Abstract: No abstract text available
Text: G E C PLESSEY X P R E L IM IN A R Y IN F O R M A T IO N S E M I C O N D U C T O R S VP5511A NTSC/PAL DIGITAL VIDEO ENCODER T h e V P 5 5 1 1 A c o n v e rts d ig ita l Y, Cr, C b, d ata into a n a lo g N T S C /P A L c o m p o s ite vide o and S -vid e o sign a ls.
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VP5511A
100nF
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t7351
Abstract: DD231 T7352 T7351B-FC
Text: Data Sheet January 1994 microelectronics group Lucent Technologies Bell Labs innovations T7351B/T7352 FDDI/TPDDI Physical Layer Devices Features Description • Single-chip FDDI physical layer PHY solution The T7351B FDDI/T7352 TPDDI Physical Layer Devices are single VLSI components that implement
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T7351B/T7352
T7352
0D50D2b
DG23112
t7351
DD231
T7351B-FC
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Untitled
Abstract: No abstract text available
Text: 7 iqot Preliminary Data Sheet May 1993 m A TaT Microelectronics T7351B FDDI Physical Layer Device Features Description • Single-chip FDDI physical layer PHY solution The T7351B FDDI Physical Layer Device is a single VLSI component that implements the complete fiber
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T7351B
de086
DS93-067LAN
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732 LEM
Abstract: lem 718 T7352
Text: Data Sheet January 1994 % A H s .T ^ ^ ^ M ic ro e le c tro n ic s T7351B FDDI/T7352 TPDDI Physical Layer Devices Features Description • Single-chip FDDI physical layer PHY solution TheT7351B FDDI/T7352 TPDDI Physical Layer Devices are single VLSI components that implement
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T7351B
FDDI/T7352
T7352
inform32
DS93-180LAN
DS93-067LAN)
005002b
732 LEM
lem 718
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Untitled
Abstract: No abstract text available
Text: Features Fulfills IEC 1036, Class 1 Accuracy Requirements Fulfills IEC 687, Class 0.5 and Class 0.2 Accuracy, with External Temperature Com pensated Voltage Reference Fulfills IEC 1268, Requirements for Reactive Power Sim ultaneous Active, Reactive and Apparent Power and Energy Measurement
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Bandwidt45Â
44-lead,
S-022
AT73C500
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LSE B10 transformer
Abstract: 3 phase GE analog KWH meter FT500 IEC687 LSE B9 transformer IEC103 3.2768MHz Crystal Poly Phase Energy Meter GE digital KWH meter
Text: Features Fulfills IEC 1036, Class 1 Accuracy Requirements Fulfills IEC 687, Class 0.5 and Class 0.2 Accuracy, with External Temperature Com pensated Voltage Reference Simultaneous Active, Reactive and Apparent Power and Energy Measurement Power Factor, Frequency, Voltage and Current M easurem ent
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S-018
MIL-STD-1835
045i1
1D74177
LSE B10 transformer
3 phase GE analog KWH meter
FT500
IEC687
LSE B9 transformer
IEC103
3.2768MHz Crystal
Poly Phase Energy Meter
GE digital KWH meter
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Untitled
Abstract: No abstract text available
Text: 10 : N + M S (NOTES : L ^ (M A T E R IA L ) ) \ 0 ' J y 0 ‘ (HOUSING) : 46NYL0N , U L94V-0 T73 sP dlI —SAACTUATOR) : PPS , U L94V -0 3 - 5 W I L (TERMINAL) : ( t 0. 3 2 ) PHOS-BRO KAMI : ACsR 0.1cm Li± t - ji4P : HA A 1cm E(l± TitL : =yCmAy=L 1cm T4±
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46NYL0N
L94V-0
2610A
EN-02JA
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Untitled
Abstract: No abstract text available
Text: \ NOV 1 3 1990' AT&T Advance Data Sheet T7351 FDDI Physical Layer Device F eatures • Monolithic FDDI Physical Layer PHY solution ■ ■ Low-power (< 800 mW) CMOS design using single 5 V power supply Byte-wide PHY-MAC (media access control) interface ■
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T7351
DS90-079SMOS
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FG3000BV
Abstract: FG3000BV-90
Text: b4E » m k • 7 2 T 4 b2 1 Q Q O b O D T T73 « P R X FG3000BV s u e r P O WE RE X INC Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France(43) 72.75.15 Asymmetric
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FG3000BV
1S697
BP107,
FG3000BV-90
Amperes/4500
FG3000BV
FG3000BV-90
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Hp 4619
Abstract: Serial NAND A1225 A1240 A1280 CQFP 256 PIN actel 81H13 actel a1240 A1280-1 2a1280
Text: SBE AC TEL CORP D • OnEHTb DGDDMGS Mb3 ■ ACT ACT 2 Field Programmable Gate Arrays Features • Up to 8000 Gate Array Gates 20,000 PLD /LC A ™ equivalent gates • Replaces up to 210 T T L Packages • Replaces up to 69 20-Pin PA L Packages • Design Library with over 250 Macros
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20-Pin
16-Bit
On241b
100-Pin
00D0475
84-Pin
T-46-1il
Hp 4619
Serial NAND
A1225
A1240
A1280
CQFP 256 PIN actel
81H13
actel a1240
A1280-1
2a1280
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