AS204-80
Abstract: AS204-80LF SSOP-16 as204
Text: DATA SHEET AS204-80, AS204-80LF: GaAs IC SP4T Nonreflective Switch With Driver 300 kHz–3.5 GHz Features Simplified Block Diagram Integrated driver 5 V supply voltage ● High isolation 45 dB @ 0.9 GHz ● Low insertion loss (0.5 dB @ 0.9 GHz) ● SSOP-16 plastic package
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AS204-80,
AS204-80LF:
SSOP-16
J-STD-020
AS204-80
AS204-80LF
as204
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murata 897 Mhz
Abstract: SKY65045-70LF HK160810NJ-T S670 m5 sot89 SOT89 sk45 making S244 SK45 srf transistor GRM39C0G100J050AD
Text: data sheet SKY65045-70LF: 390–1500 MHz Low Noise Power Amplifier Driver Block Diagram Applications l l l l l l l U HF television T ETRA radio G SM, AMPS, PCS, DCS, 2.5G, 3G ISM band transmitters F ixed WCS 8 02.16 WiMAX 3 GPP long term evolution
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SKY65045-70LF:
OT-89
J-STD-0-20)
SKY65045-70LF
murata 897 Mhz
HK160810NJ-T
S670
m5 sot89
SOT89 sk45
making S244
SK45
srf transistor
GRM39C0G100J050AD
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5332R34-018
Abstract: AL S244 HK16088N2J-T S708 d285 S670 SKY65009-70LF GRM1885C1HR50CZ01D TETRA radio
Text: data sheet SKY65009-70LF: 250–2500 MHz Linear Power Amplifier Driver Applications l l l l l l l l Functional Block Diagram UHF television, CATV, DBS TETRA radio GSM, GPRS, CDMA, WCDMA AMPS, PCS, DCS, PCS ISM band transmitters Fixed WCS WLAN, WiMAX RFID GND
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SKY65009-70LF:
SKY65009-70LF
5332R34-018
AL S244
HK16088N2J-T
S708
d285
S670
GRM1885C1HR50CZ01D
TETRA radio
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SKY13299-321LF: GaAs SPDT 7 W Switch 100 MHz–4 GHz Functional Diagram Features ● ● ● ● ● Positive voltage control 0/3 to 0/5 V Low insertion loss 0.5 dB typical at 3.5 GHz High isolation >35 dB at 3.5 GHz High P-0.1 dB of 38.5 dBm at 3.3 V
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SKY13299-321LF:
J-STD-020
SKY13299-321LF
12-lead
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SKY65206-13: WLAN 802.11b/g Intera Front-End Module GND GND ANT A GND GND ANT B 2.4–2.5 GHz operation Advanced InGaP HBT process ● 27 dB small signal gain ● 802.11g linear power at 3.0% EVM: 16 dBm ● 802.11b mask compliant power: 20 dBm
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SKY65206-13:
11b/g
J-STD-020
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44 LS 95
Abstract: tx-1g SKY65225-11 SKY65227-11
Text: DATA SHEET SKY65227-11: WLAN 802.11n Single Band 2.4 GHz MIMO Intera Front-End Module Features ● ● ● ● ● ● ● ● ● ● ● ● Description Two full 2.4 GHz transmit/receive chains PCIe, miniPCI, Cardbus and Access Point applications Backward-compatible with 802.11b/g standards
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SKY65227-11:
11b/g
SKY65225-11
J-STD-020
44 LS 95
tx-1g
SKY65225-11
SKY65227-11
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80021
Abstract: SGC-6386Z
Text: Preliminary Information SGC-6386Z Product Description Sirenza Microdevices’ SGC-6386Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process
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SGC-6386Z
SGC-6386Z
EDS-104746
80021
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44 LS 95
Abstract: RX Antenna Diversity for 802.11n OFDM542 SKY65230-11 lS21l
Text: DATA SHEET SKY65230-11: WLAN 802.11n 2 x 2 MIMO Intera Front-End Module with 3 Antenna Ports Features ● ● ● ● ● ● ● ● ● ● ● Description 2 x 2 MIMO architecture Two full dual-band transmit/receive chains 3rd antenna provides switch diversity on both chains
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SKY65230-11:
11a/b/g
J-STD-020
SKY65230-11
44 LS 95
RX Antenna Diversity for 802.11n
OFDM542
lS21l
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SKY65249-11: WLAN 802.11b, g, n Intera Front-End Module Features Description 2.4 to 2.5 GHz operation ● Cardbus, mini PC1, PCIe and AP applications ● P OUT @ 2.5% EVM OFDM54 : 18 dBm ● Gain: 25 dB ● Integrated PA, filters, directional detector and diversity switch
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SKY65249-11:
OFDM54)
SKY65249-11
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SKY65241-12: WLAN 802.11a, b, g, n Dual-Band Intera Front-End Module Single Antenna Features Description 2.4to2.5GHzand4.9to5.9GHzoperation Cardbus,miniPCI,PCIeandAPapplications
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SKY65241-12:
SKY65241-12à
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SKY13278-313LF: GaAs SPDT Switch 100 MHz–2.5 GHz Features ● ● ● ● ● ● Function Block Diagram Broadband: 100 MHz–2.5 GHz Very low insertion loss: 0.4 dB typ. @ 900 MHz High isolation: 26 dB typ. @ 900 MHz Low current consumption: <100 µA @ 3 V
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SKY13278-313LF:
SKY13278-313LF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SKY65241-12: WLAN 802.11a, b, g, n Dual-Band Intera Front-End Module Single Antenna Features Description 2.4 to 2.5 GHz and 4.9 to 5.9 GHz operation ● Cardbus, mini PCI, PCIe and AP applications ● P OUT @ 3.0% EVM OFDM54 : 16 dBm (a), 21 dBm (b), 18 dBm (g)
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SKY65241-12:
OFDM54)
SKY65241-12
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Untitled
Abstract: No abstract text available
Text: SD57045-01 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M250 epoxy sealed ORDER CODE SD57045-01
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SD57045-01
SD57045-01
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70808
Abstract: 82645 56260 0117 0317 HWL26NPA 104780 107867 lS12l GaAs FET sot89 78045
Text: HWL26NPA L-Band GaAs POWER FET Autumn 2002 V1 Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V to 6V Operation Outline Dimensions 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description
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HWL26NPA
HWL26NPA
70808
82645
56260
0117 0317
104780
107867
lS12l
GaAs FET sot89
78045
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36568
Abstract: No abstract text available
Text: L-Band Power GaAs FET Description Outline Dimensions !!" #$ % &$ !$"' "#$# #!# % Features •
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Sca732
36568
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SKY65111-348LF: ISM 600–1100 MHz Band 2 Watt InGaP HBT Power Amplifier Features Block Diagram Optimized for 800–1100 MHz operation ● Output power greater than 33 dBm @915 MHz ● 3.5 V nominal operating voltage ● Integrated analog power control voltage, V
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SKY65111-348LF:
SKY65111-348LF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SKY65111-348LF: ISM 600–1100 MHz Band 2 Watt InGaP HBT Power Amplifier Features Block Diagram Optimized for 800–1100 MHz operation ● Output power greater than 33 dBm @915 MHz ● 3.5 V nominal operating voltage ● Integrated analog power control voltage, V
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SKY65111-348LF:
SKY65111-348LF
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MARKING S299
Abstract: S299 DB QFN-12 SKY13299-321LF
Text: DATA SHEET SKY13299-321LF: GaAs SPDT 7 W Switch 100 MHz–4 GHz Functional Diagram Features ● ● ● ● ● ● Positive voltage control 0/3 to 0/5 V Low insertion loss 0.5 dB typical at 3.5 GHz High isolation >35 dB at 3.5 GHz High P-0.1 dB of 38.5 dBm at 3.3 V
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SKY13299-321LF:
J-STD-020
SKY13299-321LF
12-lead
MARKING S299
S299 DB
QFN-12
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tx-1g
Abstract: RX1g 21 TX1G SKY65225-11 SKY65227-11 SKY65
Text: DATA SHEET SKY65227-11: WLAN 802.11n Single Band 2.4 GHz MIMO Intera Front-End Module Features ● ● ● ● ● ● ● ● ● ● ● ● Description Two full 2.4 GHz transmit/receive chains PCIe, miniPCI, Cardbus and Access Point applications Backward-compatible with 802.11b/g standards
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SKY65227-11:
11b/g
SKY65225-11
J-STD-020
tx-1g
RX1g 21
TX1G
SKY65225-11
SKY65227-11
SKY65
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SKY65112-84LF
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SKY65112-84LF: Linear Power Amplifier Driver, 0.5 W 400–2300 MHz Features ● ● ● ● ● Functional Block Diagram Wideband: 400–2300 MHz High linearity: OIP3 > 39 dBm; P1 dB > 27 dBm @ 940 MHz High gain > 18 dB Single DC supply: 5 V
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SKY65112-84LF:
450/750/850/900MHz
SKY65112
SKY65112-84LF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TA4003F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4003F V H F -U H F WIDE BAND AMPLIFIER FEATURES • Band W idth 1.5CHz Typ. (3dB down, V CC = 2V) • High Gain : |S2 i|2 = 11dB (Typ.), (f = 500MHz, V CC = 2V) • Operating Supply Voltage : V ( x = 2~3V
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TA4003F
500MHz,
500MHz.
IS22P
IS12P
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ne800299
Abstract: NE8002 NE800196 NE8001 NE800199 NE800200 NE800296 40MAG NE800
Text: C-BAND MEDIUM POWER GaAs MESFET NE8001 SERIES NE8002 SERIES FEATURES NE800196 PidB = 26 dBm, GidB = 8.5 dB, Vos = 9 V, f = 7.2 GHz NE800296 PidB = 29 dBm, GidB = 8 dB, Vds = 9 V, f = 7.2 GHz BROADBANDCAPABIUTY AVAILABILITY: Hermetic Packages Chip PROVEN RELIABILITY
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NE800196
NE800296
NE8001
NE8002
lS21l
lS22l
IS12I
L42752S
ne800299
NE800199
NE800200
40MAG
NE800
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Untitled
Abstract: No abstract text available
Text: NEZ6472-15D NEZ6472-15DD NEZ6472-8D NEZ6472-8DD NEZ6472-4D NEZ6472-4DD C-BAND POWER GaAs MESFET OUTPUT POWER AND EFFICIENCY vs. INPUT POWER FEATURES • HIGH P o u t 18W 42.5 dBm Typ PidB for NEZ6472-15D/15DD 9W (39.5 dBm) Typ PidB for NEZ6472-8D/8DD 4.5W (36.5 dbm) Typ PidB for NEZ6472-4D/4DD
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NEZ6472-15D
NEZ6472-15DD
NEZ6472-8D
NEZ6472-8DD
NEZ6472-4D
NEZ6472-4DD
NEZ6472-15D/15DD
NEZ6472-8D/8DD
NEZ6472-4D/4DD
-15DD
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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