LSE 405 Search Results

Contextual Info: INTERNATIONAL RECTIFIER LSE D • MÖSS4SE DQ1 7 4 « ï 4 flû' î PD-2.263 International B Rectifier 4o i c n q . s e r i e s SCHOTTKY RECTIFIER 400 Amp Major Ratings and Characteristics Characteristics lF AV Rectangular waveform V RRM lpsM @ tp-5pssine

Contextual Info: LSE D INTERNATIONAL RECTIFIER H M Û S S M S 2 G G 1 7 3 7 M OGT • INR PD -2.254 htemational [^Rectifier i 6o c m q . s e r i e s SCHOTTKY RECTIFIER 160 Amp Major Ratings and Characteristics Description/Features 160CMQ. Units Characteristics lF AV Rectangular

Contextual Info: INTERNATIONAL RECTIFIER LSE D • 4 3 5 5 4 5 2 □ D l t Z a 1} 137 ■ INR Bulletin E2798 International l ü Rectifier IRFK3D250,IRFK3F250 Isolated Base Power H EX-pak Assembly - Half Bridge Configuration • • • • High Current Capability. U L recognised E78996.

Contextual Info: LSE D INTERNATIONAL RECTIFIER • 4355452 0017220 2 4 e! H I N R PD-2.308 4 o c p q o 5o International [k ^ J Rectifier 4 o c pq o 6 o SCHOTTKY RECTIFIER 40 Amp Major Ratings and Characteristics Description/Features The 40CPQ. center tap Schottky rectifier has been opti­

LTS-312 R

Contextual Info: COMPONENT RESEARCH CO I LSE D • 2303T11 0000711 G I^O Component Research - c r c J - S20 ■ M ETALLIZED POLYCARBONATE CAPACITOR G 1 2 S P E C IF IC A T IO N S M e ta llize d polycarbonate d ie le c tric , h e rm etically sealed, extended m etal film electrodes,

MSM5205RS

Abstract: MSM5218RS OKI 5205 MSM4015 msm5204 MSM5205 csb 384P csb 200 4bit straight adpcm method Analysis on the ADC
Contextual Info: O K I Semiconductor 1SM5218 ADPCM SPEECH ANALYSIS/SYNTHESIS IC GENERAL DESCRIPTION T h e M S M 5218 is a com p lete speech a n a ly s is/ synth esis LSI featuring the A d ap tiv e D iffer­ e n tial P u lse C o d e M o d u la tio n A D P C M m eth od of data com pression. The M SM 5218

st 9622

Abstract: IRF9
Contextual Info: P-CHANNEL POWER MOSFETS IRF9620/9621 /9622/9623 FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: International l ü Rectifier 4055455 D G 1 5 flb 2 HEXFET P o w e r M O S F E T INTERNATIONAL G lö « IN R PD-9.563C IRL540 R EC TIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V g s =4V & 5V 175°C Operating Temperature

Diode CK 66A

Contextual Info: International ioR Rectifier 4055452 b36 « I N R P D ‘ 9-595A IRFP448 HEXFET P o w e r M O S F E T • • • • • • 0015532 IN T E R N A T IO N A L R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching

tc3298

Abstract: 152375
Contextual Info: NEC i MOS INTEGRATED CIRCUIT / iP D 1 6 4 0 7 160-OUTPUT TFT-LCD SOURCE DRIVER DESCRIPTIO N The /iPD 16407 is a source d rive r for a T F T liq uid-crystal panel. The internal configuration co m p rise s a shift register w h ich g enerates the sam p lin g tim ing and a sam ple-and-hold circu it w h ich sam p le s the analog voltage. Th ere are

Contextual Info: International bSE ^ 4055452 GDi4b?4 oao *inr pd_9898 ¿ J Rectifier international rectifier IRF540S HEXFET P ow er M O S FE T • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature

Contextual Info: DATA SHEET_ NEC MOS Integrated Circuit /¿PD16715 384 OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 64 GRAY SCALES The /¿PD16715 is a source driver for TFT-LCDs capable of dealing with displays with 64 gray scales. Data input is

Contextual Info: S^E 405 5 4 5 2 GG13373 SOM » International S R ectifier I INR SERIES IRK.170, .230, .250 SCR I SCR and SCR / DIODE NEW MAGN-A-pak Power Modules INTERNATIONAL R E CT IF IE R Features • High voltage. ■ Electrically isolated base plate ■ 3 000 V RMS isolating voltage

Contextual Info: CABLE DATA SPECIALTY CONNECTOR CO., INC c •vX W Y V v LV V vV vV xl _ x v \ $ lV x V < a yV ^ / v n yi IN N E R JACKET OUTER JACKET OUTER B R A ID R G -6A /U M IL -C -1 7/2 .332 .264 m ax. .185 m ax. .405 .340 .285 .0285 .089 7 5 O H M -D o u b le B raid

STM32L062K8

Contextual Info: STM32L062K8 Ultra-low-power 32-bit MCU ARM-based Cortex-M0+, 64 KB Flash, 8 KB SRAM, 2 KB EEPROM, USB, ADC, DAC, AES Datasheet - preliminary data Features • • • • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40 to 105/125 °C temperature range

LZ95G55

Abstract: ccd cmos 84 24128 57415 bcp 846 QFP072-P-1010 LZ2313B5 LZ2313 external VD 13ll
Contextual Info: LZ95G55 SHARP LZ95G55 Single-Chip Driver LSI for CCD FEATURES • • • • Switchable between 270 000 pixels CCD and 320 000 pixels CCD Switchable between NTSC EIA and PAL (CCIR) systems Built-in EE (Electronic Exposure) control (1/60 to 1/100 000 s for NTSC; 1/50 to 1/100 000 s

ior e78996

Abstract: E78996 ior e2711
Contextual Info: INTERNATIONAL RECTIFIER L5E » INR MÖSS4S2 GGlb32T 17*1 Bulletin E27114 International S Rectifier IRFK6HC50,IRFK6JC50 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.

STM32L051K8

Contextual Info: STM32L051x6 STM32L051x8 Access line ultra-low-power 32-bit MCU ARM-based Cortex-M0+, up to 64 KB Flash, 8 KB SRAM, 2 KB EEPROM, ADC Datasheet - preliminary data Features • • • • • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40 to 105/125 °C temperature range

Contextual Info: AMERICA N/E LECTRON IC b3E » Gb?b7M3 GG01075 W «EDI MINIBRIDGE 50 ns. ULTRA-FAST RECOVERY 8 AMPERES* SINGLE-PHASE, FULL-WAVE BRIDGES HEAT SINK • CHASSIS • PC BOARD MOUNTING INTEGRALLY MOLDED HEAT SINK PROVIDES LOW THERMAL RESISTANCE SPACE SAVING IN-LINE DESIGN

HFE4059BP

Abstract: 4059B SCL4059B counter preset mos Divide by N counter
Contextual Info: 80 - - 4059B Divide by N Counter mmfó m PROGRAM JAM INPUTS BCD C P — L E - 1 24 — 2 23 - Q 22 - J 5 V CC J1 - 3 J 2 - 4 2i -J 6 J 3 - 5 2 0 - J 7 J4 - 6 1 9 - J 8 J 1 6 - r 18 - J 9 J1S — 8 1 7 - J 1 0

Contextual Info: STM32L063C8 STM32L063R8 Ultra-low-power 32-bit MCU ARM-based Cortex-M0+, 64KB Flash, 8KB SRAM, 2KB EEPROM, LCD, USB, ADC, DAC, AES Datasheet - preliminary data Features • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40 to 105/125 °C temperature range

Contextual Info: 3.3V CMOS 20-BIT BUFFER WITH 5 VOLT TOLERANT I/O BE :888í:i8fí¡ D E S C R IP TIO N : FEATURES: - Typical tsK o (Output Skew) < 250ps - ESD > 2000V per MIL-STD-883, Method 3015; - 0.635mm pitch S SO P , 0.50mm pitch T S S O P ID T74L VC16827A ADVANCE INFORMATION

s1bc

Abstract: S15C uu 10.5 120UL
Contextual Info: INTERNATIONAL RECTIFIER 1I O R 1i n t e r n a t io n a l " qs D eT| 4055455 D007SÖ5 fl | Data Sheet No. PD-3.118 r e c t if ie r S15C & S15CH SERIES 1200-600 VOLTS RANGE 140 AMP RMS, CENTER GATE PHASE CONTROL TYPE STUD MOUNTED SCRs VOLTAGE RATINGS VOLTAGE

irff9113

Abstract: IRFF9111 irff* p-channel hexfet G391 irff9110 G392
Contextual Info: H E D I 4055455 IN T E R N A T IO N A L OGOTM IS 1 | Dgta g h e e t N q p D. 9i388D R E C T IF IE R I«R 'T ' J f - l f ' INTERNATIONAL RECTIFIER H E X F E T T R A N S I S T O R S I R F F 9 1 1 Ü I R F F 9 1 < 11 I R F F 9 1 1 S I R F F 3 1 1 3 c P - P