LSE B4 Search Results

IRE-5

Abstract: HD63140 CP IRS15 L2021 006-AD HD63140 IRE20 HD6301X IRE5 XTAL 16Mhz
Contextual Info: H D 6 3 1 4 - U n iversal P u lse P ro ce sso r U P P • • D e s c r ip tio n T h e H ita c h i H D 63140 U n iv e rsa l P u lse P r o c e s ­ so r is a CM O S p e r ip h e r a l LSI c o n s is tin g of

LSE B9

Contextual Info: ÛUALITY SEMICONDUCTOR INC LSE QS3384, Q D • 7m3bô03 OOGlMll 355 QS32384 High Speed CMOS 10-bit Bus Switches QS32384 FEATURES/BENEFITS ■ • • ■ • 5£1 switches connect inputs to outputs Direct bus connection when switches on Zero propagation delay 3384

Triacs tag 89

Abstract: TAG 233 600 triacs bt 12 TRIAC TAG 90 BTA140 BTA140-500 IEC134
Contextual Info: PHIL IPS I N T E R N A T I O NA L LSE » • 7 1 i a ö 2h OOt.HB'ib 47h H P H I N J BTA140 SERIES TRIACS Glass-passivated 25 ampere triacs intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance with very low

UDR20

Abstract: 20U15 HD63140 ire5
Contextual Info: H D 6 3 1 4 - U niversal Pulse Processor UPP D escription 24 16-bit u n iv e rsa l re g iste rs (UDR) 16 I/O te rm in a ls (8 in te rn a l re g iste rs for p u lse I/O c o n tro l a re also p ro v id ed )

HD63143

Abstract: ddr5 HD63143B00PS FS12 SCR HD63143A00PS ali m 3328 voltage relay omr h IRS21 application note MFNO HD68HC000
Contextual Info: H D 6 3 1 4 3 - U n ive rsal P u lse P ro ce sso r UPP-H1 D escription • T h e H ita c h i H D 6 3 1 4 3 U n iv e rsa l P u ls e P r o c e s ­ so r is a C M O S p e r ip h e ra l L S I c o n s is tin g o f

STATES10

Contextual Info: LSI LOGIC L64245 Versatile FIR Filter P re lim in a ry D escription The L64245 FIR Finite Im p u lse R esponse filte r p ro c e s s o r p e rfo rm s filte rin g in m any d iffe re n t fo rm s fo r a p p lic a tio n s ra n g in g fro m b ro a d c a s tq u a lity vid e o tra n s m is s io n and HDTV to d isk

STATES10

Abstract: 164245 h4 6457 Three-Five 74LS373 L64245 DI9010
Contextual Info: LSI LOGIC L64245 Versatile FIR Filter P re lim in a ry D escription The L64245 FIR Finite Im p u lse R esponse filte r p ro c e s s o r p e rfo rm s filte rin g in m any d iffe re n t fo rm s fo r a p p lic a tio n s ra n g in g fro m b ro a d c a s tq u a lity vid e o tra n s m is s io n and HDTV to d isk

h240

Abstract: t8 3580
Contextual Info: LSI LOGIC L64245 Versatile FIR Filter Prelim inary D escrip tio n T h e L64245 F IR Fin ite Im p u lse R e sp o n s e filte r p ro c e s s o r p e rfo rm s filte rin g in m an y d iffe re n t fo rm s fo r a p p lic a tio n s rangin g from b ro a d c a stq u ality vid e o tra n s m is s io n and H D TV to d isk

fu320

Abstract: u322 IRFR322 i FU320 322 mosfet tag t 2512 u320 diode 160Tl IRFR320
Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7^4142 IRFR320/322 IRFU320/322 N-CHANNEL POWER MOSFET FEATURE • • • • • • • QG1235G 044 ■ SflGK D-PACK Lower R ds <0N Improved inductive ru gged ess Fast switching time R ugged polysllic on gate cell structure

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ STB 11 N B 40 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET V TYPE S TB11N B40 R D S(on) Id < 0 .5 5 Q. 1 0 .7 A dss 400 V • TYPICAL RDS(on) = 0.48 EXTREMELY HIGH dV/dt CAPABILITY . 100% AVALANCHE TESTED

Contextual Info: SGS-1H0MS0N IMOigœiILliera *® S T B 7 N B 40 N - CHANNEL ENHANCEMENT MODE _PowerMESH MOSFET PRELIM IN ARY DATA TYPE STB7N B40 . • . . . . V dss RDS on Id 400 V < 0.9 Q. 7 .0 A TYPICAL RDS(on) = 0.75 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: S G S -T H O M S O N RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ S T B 11NB 40 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET V TYPE S TB11N B40 dss 400 V R D S(on) Id < 0 .5 5 Q. 1 0 .7 A • TYPICAL RDS(on) = 0.48 EXTREMELY HIGH dV/dt CAPABILITY . 100% AVALANCHE TESTED

b11nb

Contextual Info: SGS-THOMSON * 7# [MOeiMillLieraeiDIgS S T B 11NB40 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET V TYP E S TB11N B40 • . . . . dss 400 V R d S o ii Id < 0 .5 5 Ç1 1 0 .7 A TYPICAL RDS(on) = 0.48 £2 EXTREMELY HIGH dV/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: SGS-THOMSON RfflD01ñ!<s [l[L[ie,ü’[KÍ@RDD S$ STP5NB40 STP5NB40FP N - CHANNEL ENHANCEMENT MODE _ PowerMESH MOSFET PRELIMINARY DATA TYPE STP5N B40 STP5N B40FP . . . . . V dss R dS(oii ) Id 400 V 400 V < 1 .8 Q. < 1 .8 Q. 4 .7 A 3.1 A TYP IC A L Ros(on) = 1.47

Contextual Info: International 1»r]Rectifier s e rie s b4o h f l / h2l FAST RECOVERY DIODES Power Modules in B-package Features • ■ ■ ■ 40A F a s t re c o v e ry tim e c h a ra c te ris tic s E le c tric a lly is o la te d b a s e p la te S ta n d a rd J E D E C p a c k a g e

Contextual Info: STP11NB40 STP11NB40FP N - CHANNEL 400V - 0.48ÎÎ - 1 0.7A - T0-220/T0-220FP PowerMESH MOSFET TYPE V dss R D S o n Id S TP11N B40 S T P 1 1 N B 4 0F P 400 V 400 V < 0.5 5 Q. < 0.5 5 Q, 1 0 .7 A 6.0 A • . . . . TYPICAL RDS(on) = 0.48 £1 EXTREMELY H IG H dV /dt CAPABILITY

SSP2N90

Abstract: 123456789
Contextual Info: N-CHANNEL POWER MOSFETS SSP2N90 FEATURES • L o w e r R ds ON • Improved inductive ruggedness • Fast switching times • Rugged polysiiicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

7915 CT

Abstract: nec 7915 IC 7915 7915 I8N25 7915 UC
Contextual Info: N E C ELECTRONICS INC fll 6427525 N E C D e J b427SaS 0010115 1 ELECTRONICS INC 81C 10195 D T—79—15 NEC Electronics Inc. D e sc r ip tio n /JPC4084 Q U A D J-FET IN PUT o p e r a t io n a l a m p lifie r P in C o n fig u r a tio n T h e //P C 4 0 8 4 o ffe rs fo u r o p e ra tio n a l am p lifie rs with

cm100dy-28

Abstract: CM1000 cm100dy
Contextual Info: b4E D • 7Etmb21 DDObbflS 277 M PR X CM100DY-28 Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 . . Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 POWEREX INC DualIGBTMOD p Q y^Q f M o d u lo

IRF540

Abstract: irfp140
Contextual Info: S A MS UN G E L E C T R O N I C S INC b4E ]> • 7^4142 IRF540/541/542/543 IRFP140/141 /142/143 «sriGK N-CHANNEL POWER MOSFETS FEATURES • • • • • • • 00121b3 TO-220 Lower R ds o n Improved inductive ru gge d n e ss Fast sw itching tim es

IC MC14011

Abstract: AD11465 MJE5420Z IC MC14011 application notes IC MC14011 motorola IC TTL 74LS00 mc14011 motorola 74LS00 specifications ic 7401 MJE5420
Contextual Info: MOTOROLA SC XSTRS/R F 12E D I L3b7254 0 Gf l5 b4 1 T'43-d5 fl | Order this data sheet by MJE5420Z/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5420Z Advance Information Z-Sw itch Bipolar Pow er Circuit N P N Self-Protected Silicon Pow er Darlington POW ER D A R LIN G T O N

4n33

Contextual Info: M O T O R O L A SC D I O D E S / O P T O t,3 b ? 2 5 5 b4E » N0 T7 OüflbfciEID MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO <R VDE UL sen C SA BS ® ® SEM K O DEM KO NEM KO BABT 6-Pin D IP O p to iso la to rs D arlin g to n O u tp u t 4N29 4N29A 4N30*

S15C

Abstract: S20C SD603C
Contextual Info: Bulletin I2068 rev. C 04/00 SD603C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 600A 1.0 to 2.0 µs recovery time High voltage ratings up to 2200V High current capability Optimized turn on and turn off characteristics

PPD-56-1

Abstract: PPD-56-2 PPD-56-3 PPD-56-4 PPD-56-5 PPD-56-5M PPD-56-6 PPD-56-7 PPD-56-8
Contextual Info: 7a s t Logic data Programmable Pulse delay Discriminator ser|es:PPD-56 devices^inc. . w w 6 BIT TTL Interfaced D e s c r ip tio n : T h e P ro g ra m m a b le D is c rim in a to r M o d u le , P P D -5 6 series, is a very po w erfu l a n d v e rs a ­