LT 0220 DIODE Search Results

LT 0220 diode

Abstract: 150 KW motor
Contextual Info: TO SHIBA 2SK2836 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2836 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source O N Resistance

K2549

Abstract: LT 0220 diode
Contextual Info: TO SHIBA 2SK2549 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2S K2 549 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS

LNJ316C8TRA

Contextual Info: Checked Approved T Y P A P P L / Designed DEVELOPMENT SPECIFICATION i P / N : Green Light Emitting Diode E I C A T I ON In d ic a to rs M A T E R I A L GaP O U Attached T L I N E A B S O L U T E P M A X 60 mW R A I T I M U M N G S C O N D I T I O N I FDc Vr

LT 0220 diode

Contextual Info: TOSHIBA 2SK2953 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2S K29 53 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Sorce O N Resistance

BYV29X600

Abstract: 600V 25A Ultrafast Diode BYV29X-600
Contextual Info: Product specification Philips Semiconductors Rectifier diodes ultrafast FEATURES BYV29X-600 SYMBOL QUICK REFERENCE DATA V R = 600V Low forw ard vo lt drop Fast sw itching S oft recovery ch aracteristic High therm al cycling perform ance Low therm al resistance

LT 0220 diode

Contextual Info: Philips Semiconductors Product specification Damper diode BY559X-1500U ultra fast, FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA Low forw ard vo lt drop Low forw ard recovery voltage

79LOO

Abstract: 78M00 NJM431U
Contextual Info: 3 -TERMINAL VOLTAGE REGULATOR • Three Terminal Voltage Regulators 78/M/L & 79/M/L 1. Positive Voltage Regulators (7800/78M00/78L00) (1) Therm al Shutdown Circuit W hen the junction tem perature (Tj) of the chip goes up abnorm ally high, the circuit reduces the output voltage

BTW58-1000R

Abstract: BTW58 M81 DIODE BTW58-1000 M0308 IEC134 M8814 Gate Turn-Off Thyristors 1500R
Contextual Info: Philips Components BTW58 SERIES FAST GATE TURN-OFF THYRISTORS Thyristors in T0-220AB envelopes capable o f being turned both on and o ff via the gate. They are suitable fo r use in high-frequency inverters, resonant power supplies, m otor control, horizontal

LT 7231

Contextual Info: Preliminary Data Sheet 12130 07/97 International l R Rectifier q u i e t IR Series 60 EPR. 60CPR. h v FAST SOFT RECOVERY RECTIFIER DIODE VF rr < 1.2V@ 30A = 95 ns VRRM 1000 to 1200V Description/Features The 60EPF. & 60CPF. fast soft recovery Q U IE T IR

diode PJ 966

Abstract: A1046 UGN 3030 UDN2949 UDN2949Z 0/diode PJ 966 UDN2950Z UDN2935Z UDN-2949z SG3635P
Contextual Info: UDN-2935Z UDN-2950Z INTEGRATED CIRCUIT ENGINEERING BULLETIN SPRAGUE THE M A R K O F RELIABILITY P e n n C e n tra l unit iü UDN-2935Z AND UDN-2950Z BIPOLAR HALF-BRIDGE MOTOR DRIVERS FEATURES • 3 .5 A P e a k O u t p u t • 3 7 V M in. O u tp u t Breakdown

Contextual Info: UFND220 UFND223 POWER MOSFET TRANSISTORS 2 00 Volt 0 .8 Ohm N-Channel FEATURES DESCRIPTION • • • • • • • The Unitrode pow er MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rqsioni an^ a high transconductance.

BTV58-600R

Abstract: 1000R BTV58
Contextual Info: SfiE » PHILIPS INTERNATIONAL • 7 1 1 D Ö E b 0 0 5 3 0 0 3 QbM « P H I N BTV58 SERIES J v._ FAST GATE TURN-OFF THYRISTORS Thyristors in T 0-22 0A B envelopes capable o f being turned both on and o ff via the gate. They are suitable fo r use in high-frequency inverters, power supplies, m otor control etc. The devices have no

intel 865 MOTHERBOARD pcb CIRCUIT diagram

Abstract: 40A Adjustable Power Supply Schematic Diagram Fuji Electric tv schematic diagram megamos PC intel 865 MOTHERBOARD CIRCUIT diagram megamos 13 f g megamos 1000 watt step down converter scheme core i5 MOTHERBOARD CIRCUIT diagram MQ-5
Contextual Info: FAIRCHILD www.fairchildsemi.com s e m i c o n d u c t o r tm RC5041 P r o g r a m m a b l e DC-DC C o n v e r t e r f or P e n t i u m P55C, K6 , and 6 x 8 6 M X ™ M 2 P r o c e s s o r s • Programmable output from 2.1V to 3.5V using integrated

DIODE SMD 5050

Abstract: RC5050M smd led 5050 MBR2015CT MQ-5 1000 watt step down converter scheme 5050 ir led DIODE led SMD 5050 led strip light 5050 ndp706al
Contextual Info: FAIRCHILD www.fairchildsemi.com s e m i c o n d u c t o r tm RC5050 P r o g r a m m a b l e DC- DC C o n v e r t e r f o r L o w V o l t a g e Microprocessors Features Description • • • • • • • • • • The RC5050 is a DC-DC controller IC which provides an

UDN2951Z

Abstract: GP014 UDN2955W UDN2955
Contextual Info: Integrated HIGH- CURRENT HALF-BRIDGE POWER DRIVER 29318.5 UDN2951Z Combining protection circuitry and a high-current, half-bridge output, the UDN2951Z half-bridge power driver provides an interface between low-level logic circuitry and high-power loads. The output can source or

Contextual Info: TELEDYNE COMPONENTS 58E m D • flW b Q E T m «¿30 3 _ SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE DUAL GATE D-MOS FET ORDERING INFORMATION SD303CHP SD303DC SD303DC/R Sortftd CMps In Carrier* TO-52,4 Lead Packag« Shorting Rlnga FEATURES

Contextual Info: EL2008C ¿ to llllK hGH PEPFCRVANCEANAIOG IN1GRA1*ED ClfiGU.TS EL2008C 5 5 M H Z 1 A/JIJ BllffC Ï' A TtipllflCV F e a tu r e s G en era l D e sc r ip tio n • H ig h slew rate— 2500 V/ju.s • W ide b andw idth— 100 M H z @ R l = 50ft 55 M H z @ R l = 10ft

Contextual Info: 10A LDO 5-Pin Adjustable Linear Regulator Description This new very low dropout regula­ tor is designed to pow er the next generation of advanced micropro­ cessor. To achieve very low dropout, the internal pass transistor is powered separately from the con­

Arnold A-254168-2 core with 60 turns

Abstract: LM317HVH LM317HVT LM317HVK-STEEL core arnold 1 - 254168-2
Contextual Info: January 1995 Semiconductor LM117HV/LM317HV 3-Terminal Adjustable Regulator General Description The LM117HV/LM317HV are adjustable 3-terminal positive voltage regulators capable of supplying in excess of 1.5A over a 1.2V to 57V output range. They are exceptionally

Resistor MSB 124

Abstract: RK738 RK 0313 asea resistor 5245 Resistor MSB 54 RRMH ASEA Rod Resistors asea pin terminal asea time-lag relay RI RRMH
Contextual Info: Catalogue RK 7 8 -2 E RELAY COM PONENTS STUD-TYPE RTLF stud-type diode, p. 1 RTNK sho rt-circuitin g com p orten , p. 2 MRB, MSB stud-type resistors, pages 2, 3 MSTA, MSTB therm istors, p. 4 Accessories, p. 5 Plug-in type relay com ponents, oil-fille d capa­

50w006

Abstract: IC 92112 LM2576 P1000 diode SVITA 3722P OR EQUIVALENT SVITA 7322P OR EQUIVALENT 1N5822 K04A LM1576 LM1576K-15
Contextual Info: fe p g s Decem ber LM1576-15/LM2576-15 Simple Switcher 3 Amp Step-Down Voltage Regulator General Description Features The LM1576 series of regulators are monolithic integrated circuits that provide all the active functions for a step-down buck switching regulator. These devices feature a 15V out­

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Surface Mount Silicon Zener Diodes Plastic SOD'123 Package Three complete series of Zener Diodes are offered in the convenient, surface mount plastic SOD-123 package. These devices provide a convenient alternative to the leadless

LT1172CS8

Abstract: LT1170 boost converter 12v dc lt1170
Contextual Info: r r u LT117Q/LT1171 /LT1172 TECHNOLOGY 100kHz, 5A, 2.5A and 1.25A High Efficiency Switching Regulators r m FCflTURCS DCSCMPTIOn • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT1170/LT1171/LT1172 are monolithic high power switching regulators. They can be operated in all standard

TOPFET

Abstract: BUK112-50GL
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor BUK112-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a low side