LT 7250 Search Results

TL3526

Abstract: TL3525A TL1527A a2724 SG1525A TL3525 sg1525 TL1525A TL2525A TL2527A
Contextual Info: LINEAR INTEGRATED CIRCUITS TYPES TL1525A, TL1527A, TL2525A. TL2527A, TL3525A, TL3527A PULSE-WIDTH MODULATION CONTROLLERS □ 2 7 2 4 , APRIL 1 9 8 3 • Complete PW M Power Control Circuitry • 8-Volt to 35 -V o lt Operation • 5 .1 -Volt Reference Trimmed to ± 1 %

LA 3660

Contextual Info: S E R IE S KR Isolated Regulated 20 Watt DC-DC Converters Wide Input Range/up to 3.33:1 Fully Regulated All Units Shielded SERIES KR SINGLE OUTPUT IN PU T FEATURES • V o lt a g e r e g u la t io n o v e r in p u t of L O W • V 10 . REG. L IN E P IC O LO A D

Contextual Info: HifiM PERFORMANCE ANAlJOS INTEGRATED CIRCUITS EHA2500 Series BUffk SlCW R lt€ Op€V(ltlOTl(ll A.Ttlpllfl€Y F e a tu r e s G en era l D e sc r ip tio n • • • • • • E lan tec’s EHA2500 Series of m onolithic high slew rate am plifi­ ers is designed and optim ized for h igh slew rates and wide bandw idths. T hree different types are offered. T he EH A250X series

Contextual Info: DCMKP 2.0/7.25 mF Vishay ESTA ESTAdry DC-Capacitor NOMINAL RATINGS TECHNOLOGY Capacitance/tolerance CN 7250 F Rated DC voltage UNDC 2000 V 0 %/+ 10 % Dielectric Polypropylene; metallized selfhealing Filling material N2; resin; dry OVER VOLTAGES ACCORDING TO STANDARD

1000w audio amplifier

Abstract: led 3w vacuum tube amplifier eb600 Eimac 450
Contextual Info: TENTATIVE DATA 3UJ5000F3 E I T E L - M c C U L L O U G H , I nc SAN BRUNO, M E D IU M MU-TRIODE CALIFORNIA T he E im a c 3 W 5 0 0 0 F 3 ¡s a w a te r-c o o le d , m e d iu m -m u p o w e r trio d e in te n d e d fo r a m p lifie r, o sc illa to r o r m o d u la to r service . It h as a m axim um p late d is sip a t io n r a tin g o f 5 0 0 0 w a tts a n d is c a p a b le o f h ig h

12BE6

Abstract: 6BE6 6BE6 tube 12BE6 tube 12be6, tube tube 6BE6 tube fm radio diagram ET-T891A general electric
Contextual Info: 6BE6 3BE6 4BE6 12BE6 6BE6 - 3BE6 - 4BE6— 12BE6 HEPTODE E T -T 8 9 1 A Page 1 FOR PENTAGRID CONVERTER APPLICATIONS TUBES 11-56 DESCRIPTION AND RATING1 The 6BE6 is a miniature heptode primarily designed to perform the com­ bined functions of the mixer and oscillator in superheterodyne circuits in both

ch7j

Abstract: L238B
Contextual Info: PLE SS EY SEMICONDUCTORS 1 2E A PLESSEY W S em icon d u ctors 7250513 D 000^330 5 . T-T 7-Cn-05 M L238B 8-CHANNEL TOUCH CONTROL INTERFACE The ML238B is an eight channel sense circuit designed specifically for touch tuning in colour and monochrome television receivers. Using low threshold P-MOS technology,

1BH62

Abstract: DIODE 1BH62 IS1835 1JH62 1DH62 1GH62 1JH62 3-3b1a DIODE 39c 1S1834 1S1835
Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO 39C FAST RECOVERY DIODE 02240 »^^0^7250 0002540 S Unit in I S 1835 600V Bin 1A MAXIMUM RATING C H A R A C T E R IST IC SY M BO L 400 1S1834 R epetitiv e P eak R e v e rse V oltage 1S1835 V Vrrm 600 1S1834 R e v e r s e V oltage

IC 7473

Abstract: CI 7473 2SC2075 7E50 AC75 27MHz rf transmitter 55vl 03a a03
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DE 1^0^7250 00D7470 3 f~ Tb <DI S C R E T E / O P T O S IL IC O N NPN E P IT A X IA L TYPE P C I PROCESS) 56C 07470 p 7 - 3 3 - 0 7 2SC2075 _ Unit in mm 27MHz POWER AMPLIFIER APPLICATIONS. FEATURES : • Recommended for Output Stage Application of

92112 reset

Abstract: HP2810 74HC221 74HC164s 74HC164 HP2-810 introduction of pulse transformer flyback transformer for medical PE-2229X lt1021
Contextual Info: DESIGN NOTES Number 19 in a series from Linear Technology Corporation January, 1989 A Two Wire Isolated and Powered 10-Bit Data Acquisition System G u y H o o ve r a n d W illia m R e m p fe r Introduction F o r reasons o f safety or to elim inate error producing ground

PIC16F72 inverter ups

Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
Contextual Info: the solutions are out there you just haven’t registered yet. RoadTest the newest products in the market! View the latest news, design support and hot new technologies for a range of applications Join the RoadTest group and be in with a chance to trial exclusive new products for free. Plus, read

Scans-0017333

Contextual Info: IAD5 SHARP-CUTOFF PEN T O D E S U B M IN IA TU R E TYPE GENERAL DATA Electrical: F i 1am ent, C o a te d : V o l t a g e . 1 .2 5 . C u r r e n t .0 .0 4 .

SFU-450A

Abstract: SFZ450G sfu450a AN7250S 40mVRMS
Contextual Info: Panasonic A N 7250S tj —7 • M AM — -j- / A M T u n e r fo r C a r R adios S Unit • mm A N7250S !i , i ' - 7 ÿ i >4] AM -f- x - - -t~ ■> 7- -r / . ¿ I t ¿ ï ,it ÿ i- 2 cm Ö 3 nr & W ä W W H * i > * « W * . AGC [ulïft, £ « t t A G C |u J * * , ^ 7 +

diode 1NU

Abstract: equivalent of diode 1Nu diode 1NU 0 b 1NU 7 1nu toshiba
Contextual Info: TOSHIBA -CDISCRETE/OPTO} Sb DE [ ^ G ^ a S D POWER REGULATOR FOR LINE OPERATED TV APPLICATIONS. DD077Û1 ^ Unit in mm 02&OMAX. FEATURES: a 1.0 MAX . Excellent Vide Safe Operating Area c . 100 W.S at Tc=25°C , 0 1 .0 . Included Abalanche Diode. : Vz=55±10V

Contextual Info: V I S H AY I N T E R T E C H N O L O GY, I N C . INTERACTIVE data book POWER ELECTRONIC CAPACITORS PEC VISHAY ESTA VSE-DB0045-1102 Notes: 1. To navigate: a) Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

LT 7202

Abstract: C7284 lt 8233
Contextual Info: MTTL Complex Functions MOTOROLA MC8200/MC7200 Series The MTTL complex functions are designee 'or digital applications in the medium to high-speed range. These MTTL devices provide significant reduction in package count and increased logic per function over devices in the basic MTTL and

CE-8254

Abstract: BA RV 437S CE-8256A 8.0 mc tdk
Contextual Info: 6448 UHF BEAM POWER TUBE _ WATER-COOLED ELECTRODES_ GENERAL DATA Electrical: F ilam e n t*, 2~Section M u lti- stran d T ho riated Tungsten: w i* *• ur rvM /1-35 av. V o ltag e per se ctio n AC or D C .\1.50 max.

LT 7202

Contextual Info: MTTL Complex Functions MOTOROLA MC8200/MC7200 Series The M T T L com plex functions are designee 'o r digital applications in the medium to high-speed range. These M T T L devices provide significant reduction in package count and increased logic per fu n ctio n over devices in the basic M T T L and

Contextual Info: SIGN N / 2 -D X 5 .0 DA T E DESCRIPTION APPROVER 5.0 THIS IS CAD DRAWING, DO N O T R E V IS E M ANUALLY!!! M a te rial • C o n ta c t pin: B r a s s • S u r f a c e o f s o ld e r tail: T in p la te d • W ith f la n g e nut: b r a s s M2.5 • I n s u la t o r (h o u sin g : T h e rm o p la s t ic ( U L 9 4 V - 0 )

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8853-AS Power GaAs FETs Chip Form Features • High power - P1dB = 28 dBm at f = 15 GHz • High gain - G1de = 7 d B a t f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)

zener diode c24 5t

Contextual Info: Microelectronics Advance Data Sheet June 1996 Lucent Technologies Bell Labs Innovations T7234 Single-Chip NT1 SCNT1 Euro-LITE Transceiver Features Description • U- to S/T-interface conversion for ISDN basic rate (2B+D) systems — Integrated U- and S/T-interfaces

Contextual Info: TOSHIBA 1SV186 Discrete Sem iconductors Unit in mm Variable Capacitance Diode -t-ass 1.5-ai 5 Silicon Epitaxial Planar Type n L ; - UHF SH FTuning adì k : <• Features 3 ï\ • High Capacitance Ratio : C2V/C25V = 5.2 Typ. • Low Series Resistance : rs = 1.2 ii (Typ.)

2SK1913

Abstract: BTB 600 BR BTb 600
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1913 Field Effect Transistor Unit in mm Silicon N Channel MOSType c-MOS III.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " Rds(ON) = 0.9H (Typ.) • High Forward Transfer Admittance

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8836B Power GaAs FETs Chip Form Features • High power - PidB = 29.5 dBm at f = 8 GHz • High gain - G 1dB = 7.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)