LT 83 ZENER Search Results

1N4099

Abstract: 1N4135 1N4614 1N4615 1N4616 1N4617 1N4627 1M4102 1N4109 MICROSEMI
Contextual Info: m C R O SEfll CORP SÌE b ll5 a t,5 D / / Microsemi Corp. •SMAT/l , CA / SCOTTSDALE. A Z / OOOlflbT TSS 1N 4099 thru 1N4135 and 1N4614 thru 1N4627 For more information call: 602 941-6300 K 1#W FEATURES W V SILICON 400 mW LOW NOISE ZENER DIODES • ZENER VOLTAGE 1.8 TO 100 V

tiz zener

Contextual Info: 1N3821 thru 1N 3830 A SANTA ANA, CA ¡ SCOTTSDALE. AZ For me 602 941-6300 FEATURES • ZENER VOLTAGE RANGE: 3.3V to 7.5V • 1N3821A-1N3828A HAVE JAN, JANTX and JAN TXV QUALIFICATIONS TO NIIL-S-19500/115 SILICON 1 WATT ZEN ER DIODES M A X IM U M R A T IN G S

MOTOROLA ZM 1N

Abstract: 1N 2979 1N2970
Contextual Info: MOTOROLA < 8 > 10 WATTS ZENER DIODES ZENER DIODES Diffused-junction zener diodes for both m ilitary and highrel labi I ity industrial applications. Available with anode-to-case and cathode-to-case connections standard and reverse polarity , i.e., 1N2970 and 1N2970R. Supplied with m ounting

a37 zener

Contextual Info: 1N5913B thru Micro/semiCorp. 1N5956B f The d ioöe e x p e n s •/ SCOTTSDALE, A Z / For more information call: 602 941-6300 FEATURES SILICO N 1.5 WATT ZENER DIO DES • Z E N E R V O LT A G E 3.3V TO 200V • W ITHSTANDS LA R G E SU RGE S TR ESSES • A LS O A V A IL A B L E IN PLASTIC C A S E. C O N S U LT FA C TO R Y.

IN4620

Abstract: IN4105 1N4F Diode 1N41 IN411 1N4019 1N4099 1N4135 1N461 1N4614
Contextual Info: Micro/semi Corp. ? The diode experts SCOTTSDALE, AZ F o r m o re in fo r m a tio n call: 602 941-6300 1N4099 thru 1N4135 and 1N4614 thru 1N4627 DO-7 FEATURES • SILICON 400 mW LOW NOISE ZENER DIODES ZENER V O LT A G E 1.8V to 100V • ALL HAVE JAN, JANTX and JANTXV

1N41118

Abstract: 1N4617B 1N4620B 1N4621B 1N4623B 1N4624B 1N4114B 1N4102B
Contextual Info: ZENER DIODES, LOW CURRENT, LOW NOISE 400mW Maximum Maximum R e v e rs e M aximum Leakage Current Z en er Zen er Not e at T. = 25°C Test Im pedance D ensity Current Nl @ I,. Current Nom inal lisiiil 1M1I Voltage NUfflbef M, V otts 1 <uA) 1N46148 1N46158 1N4616B

LA 4108

Abstract: IC LA 4127 zener diod 18v Diode LT 4109
Contextual Info: Micro/semiCorp. $ Trie diod e experts SANTA ANA, CA SCOTTSDALE, AZ For more information call: 602 941-6300 1N 4 0 9 9 thru 1 N 41 3 5 and 1 N 4 6 1 4 thru 1N 46 2 7 DO-7 FEATURES • ZENER V O LTA G E 1.8V to 100V • • ALL HAVE JAN, JANTX and JANTXV QUALIFICATIONS TO MIL-S-19500/435

1NS92S

Abstract: 1N3914 5956b 1N5915
Contextual Info: 1N 5913B thru 1N 5956B Mierosemi Corp. y The a<oú€ experts / SANTA A N A , CA SC O T T SD A L E , A Z F o r m o re in fo rm a tio n call: 602 941-6300 SILICON 1.5 WATT ZENER DIODES FEA TU R ES • Z E N E R V O LT A G E 3.3V TO 200V • W ITHSTANDS LA R G E S U R G E S TR ES S ES

1N474SA

Contextual Info: OGGGGOb S 24E D R F ELECTRONICS INC DO-41 Features • Silicon Planar diode, double heat sink, • Storage Temperature—65°C~+175°C • Junction Temperature ~175 °C 1N47 Series 1 Watt Glass Zener Diodes In DO-41 Package Device Typ* 1N4728A 1N4729A 1N4730A

1N5917

Abstract: 1NS927
Contextual Info: 1N5913B thru 1N5956B Microsemi Corp. é The d'Ode o oe rrs SCOTTSDALE , A Z For m ore in fo rm a tio n call: ?W 6 02 941-6300 SILICON 1.5 WATT ZENER DIODES FEATURES • Z E N E R V O LT A G E 3.3V TO 200V • W ITHSTANDS LA R G E S U R G E S TR ES S ES

ZD 103 ma

Abstract: LT/SG3527A op292g AD8436
Contextual Info: 3 75 90 98 190 0.1 0.001 10 5 H 3 5 67 85 98 190 0.1 0.001 10 5 H • • 1 0.095 0.013 2.5 2 90 100 105 45 0.015 0.020 10 45 H • • 1 5 2.7 6 4 60 65 113 22 0.05 0.550 30 20 H S S • • 1 3 5 25 20 38 45 83 45 0.05 0.700 50 2501 I S S PDIP5 <6 1 0.004

Contextual Info: c o m p e n s a t e » d e v i c e s T nT ZOE D 23025S4 0000337 L. T - n - n • ZENER DIODE f • LEADLESS PACKAGE FOR SURFACE MOUNT CDLL6309 • LOW REVERSE LEAKAGE CHARACTERISTICS thru CDLL6355 • LOW NOISE CHARACTERISTICS • DOUBLE SLUG CONSTRUCTION

ams SOT23

Contextual Info: I n ter n a tio n a l MMBZ5226 thru S e m ic o n d u c to r , I n c . MMBZ5262 350 mW SURFACE MOUNT ZENER DIODES THERMAL C HA RA CTERISTICS f' Characteri sti c Symbol Max Uni t 225 mW 1.30 mW/ °C R oja 556 °C/mW Pq 300 mW 2. 40 mW/ °C 417 °C/mW Po Total Devi ce Dissi pati on Mounted on

STMicroelectronics datasheet LF33

Abstract: MELF dimensions st CDLL6309 CDLL6310 CDLL6312 CDLL6313 CDLL6314 CDLL6315 CDLL6316 CDLL6317
Contextual Info: c o m p e n s a t e » d e v i c e s T nT ZOE D S3DSSS4 0000337 L. T - n - n • ZENER DIODE f • LEADLESS PACKAGE FOR SURFACE MOUNT CDLL6309 • LOW REVERSE LEAKAGE CHARACTERISTICS thru CDLL6355 • LOW NOISE CHARACTERISTICS • DOUBLE SLUG CONSTRUCTION

Contextual Info: ZENER DIODES 410m W BZT52 SERIES CASE TYPE: SOD-123 m D ynam ic R esistance Z aner VoftageW at lz = 5 m A Type V zV at lz > S m A f a lt t f e at Iz = 1 mA f> 1 kHz Rj U Rj Q Tam p. Coeft. of Zaner Voltage at Iz * 5 raA a vz ~*/K A d m lssab la Z eaar currentW

AD659

Contextual Info: A N A LO G D E V IC E S ” fí^'j 1 " FEATURES Complete 16-Bit D/A Function On-Chip Output Amplifier , High Stability Buried Zener Reference Monolithic BiMOS II Construction ±1 LSB Integral Linearity Error 15-Bit Monotonic over Temperature Microprocessor Compatible

Diode 1N41

Contextual Info: Microsemi Corp. f The diode experts SCOTTSDALE, A Z Fo r m o re i nf o r m a t io n call: 602 941-6300 FEATURES 1N 4099 thru 1N 4135 and 1N 4614 thru 1N 4627 D O -3 5 SILICON 500 mW LOW NOISE ZENER DIODES • Z E N E R VO L TA GE 1.8 TO 100 V • A L L HAVE J A N . J A N T X A ND J A N T X V - 1 Q UA LI F I C A TI O NS

9.1 ZPD

Abstract: ZMM12
Contextual Info: ZMM2,7 i thru ZMM51 MINI-MELF-SMD Use Advantages 0.5 Watt Zener Diodes This family is equivalent to the European PRO Electron types. The specifications reflect similar low zener test currents over voltage ranges. For use in clipping and stabilizing circuits, where real protection is needed.

C0811

Abstract: 1N2828B DIODE YV 950 zener 245 245 zener in4562b 1N2804 1N4557B 1N4558B 1N4559B
Contextual Info: 1 N 2 8 0 4 th ru 1NI2846B a nd 1 N 4 5 5 7 B th ru 1N4564B Microsemi Corp. FEATURES SILICO N 50 WATT Z E N E R D IO D E S • ZENER VOLTAGE 3.9V to 200V • AVAILABLE IN TOLERANCES OF ± 5 % , ± 1 0 % and ± 2 0 % • DESIGNED FOR MILITARY ENVIRONMENTS See Below

Contextual Info: ZENER DIODES, GLASS PACKAGE, GENERAL PURPOSE 1.5 Watts lliil s llilf l P a rt N um ber 1N 5913 1145914 1145915 1N 5916 1145917 1145918 1145919 1145920 1145521 1N 5922 N o m in a l Zener V o lta g e llill! Zener Test C u rre n t M a x im u m Zener m p e d a m te

1N4729A

Abstract: BKC Semiconductors 1N4743A LL41 1n4733a melf 1N4755A SMD 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A
Contextual Info: DO-41 glass 1 Watt Use Advantages Zener Diodes 1N4729A thru 1N4764A Ideal for use as tow cost, general purpose regulators and protection devices. Used in hostile environments where long term reliability is important. Competitive reptacementfor plastic 00-41 zener diodes.

2M4735A

Abstract: ZM4728A ZM4729A ZM4730A ZM4731A ZM4732A ZM4733A ZM4734A ZM4736A ZM4737A
Contextual Info: ZENER DIODES, SURFACE MOUNT, MELF PACVKAGE 1 Watt <1ED£C P a rt Num ber Nom inal M axim um Zener Z en e r Zener Voltage Im pedance Test C urrent Z jt at l»r M axim um Knee Im pedance M axim um R everse C u rre n t a tT ,= 2 5 C M axim um M axim um S urge

DO213AB

Abstract: DSAIH0002550 DO-213AB footprint
Contextual Info: MELF- 1.5 Watt Use Advantages Zener Diodes LL5922B thru LL5958B Cost effective replacement for plastic SMB zener diodes. Occupies the same footprint as SMB, no PC board rework. LL-41 MELF vs. SMB - savings of up to 50% are possible. Compatible with all major automatic pick and place SM mounting equipment.

955B

Abstract: diode zener ZL 15 932B diode 946b 1SMB5926 1SMB5927 1SMB5928 1SMB5956 926B 932B diode zener
Contextual Info: TAIWAN SEMICONDUCTOR [ s Pb RoHS COMPLIANCE 1SMB5926 - 1SMB5956 3.0 Watts Surface Mount Silicon Zener Diode SMB/DO-214AA .083 2.10 .077(1.95) nI u Features •> -v-y-y- . * .147(3.73) ,137(3.48) * F o r surface m ounted applications in ord er to o ptim ize board sp ace