LT 908 Search Results

Contextual Info: I n ter n a tio n a l 1N4916 thru 1N4932A S e m ic o n d u c to r , I n c . TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 19.2 V O LT N O M IN A L ZEN ER V O LT A G E +/- 5% LOW NO ISE MAXIMUM RATINGS operating Temperature: storage Temperature: DC Power Dissipation:

Contextual Info: R Digital CMOS camera C11440-42U A brand new feature "W-VIEW Mode" B e b r i l l i a n t. The ORCA-Flash4.0 LT makes it easy to be brilliant. With 2x the speed, 3× the field of view and up to 5× the signal to noise over even the best interline CCD cameras, the ORCA-Flash4.0 LT

High Voltage

Abstract: Fuses A
Contextual Info: HIGH VOLT VOLTAGE LTA LT TAGE High Voltage Fuses are typically used in distribution circuits and can be used for indoor or outdoor applications. They are available in four lengths and four different voltage ranges. Fuses supplied standardly with Striker Pins.

A 614-Y

Contextual Info: APPROVED: DATE:_ TITLE: .079 [2.00] .130 [3.30] 7 .7 0 ] ~ pu B LT\\^-U SPECIFICATIONS: Material: Insulator: Nylon 66, rated UL 94V— 0 Insulator color: White Contacts: Brass Plating: Matt Tin over Nickel underplate overall Electrical: Operating voltage: 100 VAC max

VSC7226

Abstract: VSC882 vsc7303 microprocess and microcontroller ics gvrp microprocess and microcontroller tool kit ic VSC3140 VSC2800 microprocess and microcontroller tool kit VSC7301
Contextual Info: 01_16190_mutiservice_cover 11/25/02 11:09 AM Page 4 Vitesse Semiconductor Corporation 741 Calle Plano, Camarillo, CA 93012 tel: 805.388.3700 fax: 805. 987.5896 www.vitesse.com M U LT I - S E R V I C E SWITCHING & ROUTING SOLUTIONS PRODUCT GUIDE Asynchronous Crosspoint Switching

LM337TP

Abstract: LM337 LT337AT LT317A LT337A LM337T-P 3-Lead Plastic DD Pak ltc m 7 lead plastic dd pak lm137 datasheet LM337 TO-3 circuit diagram
Contextual Info: LT137A/LM137 LT337A/LM337 Negative Adjustable Regulator FEATURES DESCRIPTION n The LT 137A/LT337A negative adjustable regulators will deliver up to 1.5A output current over an output voltage range of –1.2V to –37V. Linear Technology has made significant improvements in these regulators compared to

IR PHOTO DIODE

Abstract: mpc 1230 DC503A diode 717 smd power combiner toroid power combiner broadband transformers ALLEN BRADLEY DIPS 1800mhz rf frequency power amplifier circuit 631 opto smd diode 708
Contextual Info: DC503A DEMO BOARD QUICK START GUIDE Description: The DC503A demo circuit board is intended to demonstrate the capabilities of the LT5512 downconverting mixer IC for cable infrastructure applications. The LT5512 Figure 1 is a broadband high signal level mixer IC optimized for high linearity

ALLEN BRADLEY DIPS

Abstract: smd diode 708 power combiner toroid Allen Bradley POTENTIOMETERS dipswitch ic 6116 marcon capacitor LT5511 RF2138 RF2140
Contextual Info: DC426B DEMO BOARD QUICK START GUIDE Description: The DC426B demo circuit board is intended to demonstrate the capabilities of the LT5511 high signal level upconverting mixer IC for 1900MHz infrastructure applications. The LT5511 mixer IC is designed to meet the high linearity requirements of cable TV

nec 2501

Abstract: CJ05-000 Allen Bradley POTENTIOMETERS power combiner toroid PFC-W0603R 2501 OPTO ALLEN BRADLEY DIPS LT5511 LL1005-FH3N9J CHEMICON marcon cap
Contextual Info: DC426B DEMO BOARD QUICK START GUIDE Description: The DC426B demo circuit board is intended to demonstrate the capabilities of the LT5511 high signal level upconverting mixer IC for 1900MHz infrastructure applications. The LT5511 mixer IC is designed to meet the high linearity requirements of cable TV

Contextual Info: APPROVED: D ATE:_ TITLE: -.0 1 7 [0 .4 3 ] u u U / .021 LT ' [0 .5 4 ] / D D D _£ -.0 7 9 [2 .0 0 ] A - •B - SPECIFICATIONS: Material: Insulator: Nylon 9T, rated UL 94V —0 Insulator color: Natural Contacts: Brass Plating: Tin over Copper underplate overall

FT1080

Contextual Info: Source Control Drawing Date: 9-08-11 QM: 5288 P/N: FT1080MJB-LT BS EN ISO 9001:2000 Accreditation AS9100 REV B SC21 Signatory Upscreening/Manufacturing Specification Document Contents 1 3 3.2 3.4 4 4.2 5.1 6.1 8 8.2 2 3.1 3.3 3.5 4.1 5 6 7 8.1 8.3 Reference Documents

Contextual Info: D ata S h e e t Llm toigçs : " 'C T M f lt f f D t C _ AGC Transimpedance Amplifier Your GaAs ¡C Source FEATURE N pT Pc'1 Preliminary s? R EV 4 s • Single +5 Volt Supply ■ Autom atic Gain Control ■ Excellent Sensitivity

philips uv 617 modulator

Abstract: ECG903 ECG908 EC090 ECG90a
Contextual Info: PHILIPS È C G INC bbSBiaa GDGasag s 3.7E D ECG903,ECG908 OPERATIONAL AMPLIFIERS semiconductors ECG903 - 12-VOLT TYPE. 12-Lead T O - 5 Styla ECG908 - 12-V O LT TYPE, 14-Lead Ptastlc Dual In-line TO 116 dim ensional o u tl in e s Dimensions in Ineties and Millimeters

Contextual Info: LT1793 Low Noise, Picoampere Bias Current, JFET Input Op Amp FEATURES • ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LT 1793 achieves a new standard of excellence in noise performance for a JFET op amp. For the first time low voltage noise 6nV/√Hz is simultaneously offered with

LTc 5962

Abstract: 8864702GA RH101A RH1013M LTC1064-1AMJ LT1010MH 10Kn4 8856201 5962-8856201xa 0P-221
Contextual Info: \rm _ RH1Q13M TECHNOLOGY q UQ| Precision Operational Amplifier D€SCRIPTIOfl rbso lutc mnximum r r t ir g s Th e R H 1 0 1 3 M is th e firs t precision dual operational am pli­ S u p p ly V o lt a g e .± 2 2 V

Contextual Info: 6 Rev APPROVED: DATE:_ Description AWO# - TITLE: Date 12/9/10 RELEASED Appr .079 [2 .00 ] 049 [1 -25] .098 [2.50] fl \ .050 [1.27] ;LT .724 .[18.40] =T -.1 5 7 [3.00] .177 [4 .5 0 ] [4.0 0 ] Q □ .492 [12.50] [— .740 [18 .8 0] —-j T .472 T - .315 [8.00]

Contextual Info: 6 4 5 APPROVED: DATE:_ TITLE: .620 -[-15 75] .469 - [1 1 .9 1 ]- 502 -493 [1 2 .7 6 ][1 2 .5 1 ] |— .051 [1 .3 0 ] C T3 LT .065 [1 .6 5 ] .015 [0 .3 8 ] SPECIFICATIONS: Material: Insulator: Hi— Temp Nylon, rated UL 94V— 0 Insulator color: Black

Contextual Info: H A H A iif lT S U PIN S,LIC0N PHOTODIODE FOR YAG LASER DETECTION S3759 te c h n ic a l d ata FOR YAG LASER 1.06 jj . m DETCTION HIGH IR SENSITIVITY (QE 50% AT 1.06 u m), FAST RESPONSE (t*=26ns) LARGE SENSITIVE AREA (5mra dia.), TO-8 PACKAGE GENERAL RATINGS

International Semiconductor

Abstract: lt 908
Contextual Info: INTERNATIONAL SEMICOND 4CJE D • TOOOaTfi 0000110 41b B I S E N A K Â International Semiconductor, In c 1 AMPERE SCHOTTKY BARRIER RECTIFIER SR120 thru SR180 V O LT A G E R ANG E 20 to 80 PRV C U R R EN T 1.0 Ampere FEATURES • Plastic package has Underwriters Laboratory

IN821

Contextual Info: INTERNATIONAL 1N821 SEMICONDUCTOR, INC. thru 1N829A TEM PER ATU R E C O M PEN SATED ZEN ER REFERENCE DIODES 6.2 and 6.5 5 V O L T N O M IN A L Z E N E R V O LT A G E MAXIMUM RATINGS Operating Tem perature: -55 °C to +200 0C Storage Tem perature: -55 °C to +200 °C

Contextual Info: 6 5 4 APPROVED: DATE:_ TITLE: D KAPTON PICK & PLACE TAPE n0 0n 0n V\ 0n 0n 000 n0 0n i\\ni0 0n 0n 0 0^ p P 0 0 000 u u u u u lT ti u u u u u .079 [2 .0 0 ] -B •A - SPECIFICATIONS: Material: Insulator: Hi— tem p therm oplastic, UL 94V— 0

Contextual Info: 4 DRAWING MADE 3 IN THIRD ANGLE PR O JEC TIO N THIS DRAWING C IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION 19 BY AMP INCORPORATED. ALL o 1 2 LOC ,19 AA IN TERNATIO NAL RIGHTS RESERVED. D IS T 28 REVISIONS P F ZONE LT R D ES C R IP T IO N ADD: -6; NPR C97-101

Contextual Info: Data Sheet L ^ M N v I G I C . ,„ c AWT0905X TX POWER MMIC S Y o u r Lt â A S I C S o u r c e Advanced Product Information Rev 3 900 MHz Band ISM GaAs Power Amplifier 1C DESCRIPTION The AW T0905X is a monolithic Power Amplifier suited for ISM cellular telephone applications.

Contextual Info: T -o f - n INTERNATIONAL SEMICOND MTE J> • T0DD37Û 00DQD72 ÖÖ5 ■ ISEM International Semiconductor, IncMINIATURE PLASTIC SILICON RECTIFIERS 1 N 4 2 4 5 thru 1 N 4 2 4 9 V O LT A G E RANGE 20 0 t o 1000 PKV C U R R EN T l . o A a t 55° FEATURES • •