LTC115 Search Results

HP 5082-4204

Abstract: MANGANIN R2C marking LTC1150 LTC1150C LTC1150CJ8 LTC1150CN8 LTC1150CS8 LTC1150M LTC1150MJ8
Contextual Info: r r u r LTC1150 m TECHNOLOGY ±15V Chopper Stabilized O perational Amplifier with Internal Capacitors K O T U IK S DCSCRIPTIOn • High Voltage Operation, ±18V ■ No External Components Required ■ Maximum Offset Voltage 5|iV ■ Maximum Offset Voltage Drift 0.05|iV/°C

Contextual Info: LTC1155 u f m TECHNOLOGY Dual High Side M icro p o w er MOSFET Driver F€RTUR€S D€SCRIPTIOfl • Fully Enhances N-Channel Power MOSFETs The LTC1155 dual high side gate driver allows using low ■ 8^A Standby Current cost N-channel FETs for high side switching applications.

HBT 05-001

Abstract: LTC1150 R2C marking LTC1150C LTC1150CJ8 LTC1150CN8 LTC1150CS8 LTC1150M LTC1150MJ8
Contextual Info: XTLinÇAE TECHNOLOGY _ LTC1150 ±15V C h o p p e r Stabilized O p e ra tio n a l A m plifier w ith Internal C a p a c ito rs KOTUIKS DCSCRIPTIOn • High Voltage Operation, ± 18V ■ No External Components Required The LTC1150 is a high-voltage, high-perform ance chopper

high Voltage Instrumentation Amplifier

Abstract: LT1025 LT1057 LTC1151 LTC1151C LTC1151CN8 LTC1151CSW lt1105
Contextual Info: LTC1151 Dual ±15V Zero-Drift Operational Amplifier U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 1151 is a high voltage, high performance dual zero-drift operational amplifier. The two sample-and-hold capacitors per amplifier required externally by other chopper amplifiers are integrated on-chip. The LTC1151 also

LT 1152

Abstract: LTC1152
Contextual Info: SPECIFICATION NOTICE LTC1152 March 1998 The LTC 1152 data sheet has been modified. Under Internal Charge Pump discussion on page 6, it’s suggested to connect a capacitor from the CP charge pump pin to V+ to reduce charge pump feedthrough noise. Figure 1 Block Diagram, however, shows this

ttl to cmos converter

Abstract: 8255 stepper motor motor stepper driver IRFZ44 1N4746 18V stepper motor using irfz44 4 phase stepper motor motor driver IRFZ44 "ttl to cmos" converter LTC1155 g0720
Contextual Info: LTC1156 Quad High Side Micropower MOSFET Driver with Internal Charge Pump DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ No External Charge Pump Components Fully Enhances N-Channel Power MOSFETs 16 Microamps Standby Current 95 Microamps ON Current

Contextual Info: LTC1156 Quad High Side Micropower MOSFET Driver with Internal Charge Pump DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ No External Charge Pump Components Fully Enhances N-Channel Power MOSFETs 16 Microamps Standby Current 95 Microamps ON Current

Contextual Info: LTC1151 Dual ±15V Zero-Drift Operational Amplifier FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 1151 is a high voltage, high performance dual zero-drift operational amplifier. The two sample-and-hold capacitors per amplifier required externally by other chopper amplifiers are integrated on-chip. The LTC1151 also

Contextual Info: LTC1151CS Linear ICs Dual Chopper-Stabilized Op Amp status Military/High-RelN Input Bias Current Max. A 0.5n Unity Gain BW (Hz)2MÂ V(io) Max. (V)5u¾ I(io) Max. (A)0.5n Com Mode Inp Range (VICR) Temp Coef. of VIO.05 P(D) Max. (W) Nom. Supp (V)15ñ Minimum Operating Temp (øC)0

Contextual Info: /TUMÇ/\B _ LTC1151 TECHNOLOGY Dual ± 15V Zero-Drift O perational Amplifier F€ flTU R € S D C S C R IP T IO n • Maximum Offset Voltage Drift: 0.05nV/°C ■ High Voltage Operation: ±18V The LTC1151 is a high voltage, high performance dual

1n414b diode

Abstract: 1N414B TSD30100
Contextual Info: u i _ LTC1153 m TECHNOLOGY / Auto-Reset Electronic Circuit Breaker F€flTUR€S D€SCRIPTIOn • Programmable Trip Delay: 15ns to >100ms ■ Programmable Trip Current: 1mA to >20A ■ Programmbale Auto-Reset Time: 1ms to >10 sec. ■ 4.5V to 18V Supply Range

ttl to cmos converter

Abstract: dual high side MOSFET driver with charge pump 4 phase stepper motor triple h-bridge motor driver ln4001 stepper 434 10MF 1N4746 IMS026 dc motor 2642
Contextual Info: flu* X r m: LinCAfc TECHNOLOGY LTC1156 Q u a d H igh S id e M icro p o w e r M OSFET Driver with Internal C h a r g e P u m p FCOTURCS DCSCRIPTIOH • ■ ■ ■ ■ ■ ■ ■ ■ The LTC1156 quad High side gate driver allows using low cost N-channel FETs for high side switching applications.

BV-1 501

Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
Contextual Info: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1

LTC1155

Contextual Info: SPECIFICATION NOTICE LTC1155 July 1996 The following specifications have changed on the LTC 1155 data sheet. All other specifications remain unchanged. For complete specifications, typical performance curves and applications information, please see the LTC1155 data sheet.

Laptop power circuits switching

Abstract: ds4 12v IMS026 LTC1156 LTC1156C LTC1156CN LTC1156CS Si9956DY hard disk motor driver
Contextual Info: LTC1156 Quad High Side Micropower MOSFET Driver with Internal Charge Pump DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ No External Charge Pump Components Fully Enhances N-Channel Power MOSFETs 16 Microamps Standby Current 95 Microamps ON Current

4 phase stepper motor

Abstract: LTC115B ttl to cmos converter triple h-bridge motor driver
Contextual Info: I LTC1156 M TECHNOLOGY Q u a d High Side M icro p o w e r MOSFET Driver w ith Internal C h a rg e Pump F€flTUR€S DCSCRIPTIOn • No External Charge Pump Components ■ Fully Enhances N-Channel Power MOSFETs ■ 16 Microamps Standby Current ■ 95 Microamps ON Current

1W4148

Abstract: SMP40P06
Contextual Info: f T l K f t L LTC1159/LTC1159-3.3/LTC1159-5 TECHNOLOGY High Efficiency Synchronous Step-Down Switching Regulators FEATURES DCSCRIPTIOil • Operation from 4V to 40V Input Voltage ■ Ultra-High Efficiency: Up to 95% ■ 20jiiA Supply Current in Shutdown The LTC 1159 series is afamily of synchronous step-down

9909

Abstract: transistor 9619 LTC1153
Contextual Info: RELIABILITY DATA LTC1153 / 54 / 55 / 56 / 57 / 63 / 65 / 77 6/17/04 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE CERDIP PLASTIC DIP SOIC/SOT/MSOP 63 9213 550 9129 679 9423 1,292 • HIGHLY ACCELERATED STRESS TEST AT +131°C/85%RH PACKAGE

Contextual Info: 2 2 li u r n TECHNOLOGY 1992 LTC1157 3.3V Dual Micropower H ig h -S id e/L o w -S id e MOSFET Driver A u g u s t 1992 F€ A TU R € S D C S C R IP T IO N • A llo w s Lo w e s t D ro p 3 .3 V S u p p ly Sw itching The L T C 1 1 5 7 dual 3 .3 V m ic ro p o w e r M O S F E T gate driver

Contextual Info: um LTC1157 TECHNOLOGY 3,3V Dual Micropower High-Side/Low-Side MOSFET Driver F€flTUR€S D€SCRIPTIOn • Allows Lowest Drop 3.3V Supply Switching ■ Operates on 3.3V or 5V Nominal Supplies ■ 3 Microamps Standby Current ■ 80 Microamps ON Current ■ Drives Low Cost N-Channel Power MOSFETs

Contextual Info: LTC1155 TECHNOLOGY Dual High Side M ic ro p o w e r MOSFET Driver F€RTUR€S DCSCRIPTIOn • Fully Enhances N-Channel Power MOSFETs ■ 8uA Standby Current ■ 85uA ON Current ■ Short-Circuit Protection ■ Wide Power Supply Range: 4.5V to 18V ■ Controlled Switching ON and OFF Times

Contextual Info: LTC1157 3.3V Dual Micropower High-Side/Low-Side MOSFET Driver DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ The LTC1157 dual 3.3V micropower MOSFET gate driver makes it possible to switch either supply or ground reference loads through a low RDS ON N-channel switch

Contextual Info: LTC1155 Dual High Side Micropower MOSFET Driver DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no

LTC1153

Contextual Info: RELIABILITY DATA LTC1153 / 54 / 55 / 56 / 57 / 63 / 65 / 77 8/21/2006 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE CERDIP PLASTIC DIP SOIC/SOT/MSOP NEWEST DATE CODE 63 9213 550 9129 679 9423 1,292 • HIGHLY ACCELERATED STRESS TEST AT +131°C/85%RH