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ATP Electronics Inc X4F04QD8BLTDSE-E-IU1DDR4-2666 4GB UNB ECC SODIMM INTUITIVE SURGICAL - Bulk (Alt: X4F04QD8BLTDSE-E-IU1) |
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X4F04QD8BLTDSE-E-IU1 | Bulk | 50 |
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ATP Electronics Inc A4G04QA8BLTDSEMemory Modules 4GB Unb Non-ECC SODIMM |
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ATP Electronics Inc A4C04QD8BLTDSEMemory Modules 4GB Unb ECC DIMM |
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ATP Electronics Inc A4C04QD8BLTDSESEMemory Modules |
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ATP Electronics Inc A4F04QD8BLTDSEMemory Modules 4GB Unb ECC SODIMM |
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LTDS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: a ltdS B El - I h w- — K -* * — ? C TRADE M A R K -A M P - B ^ CJAPA N) *» m C H INACPRO) A M P or + A M P CMANUFAC^fUJ^ o r a ' m 'p - è - l— L/1 I- É - o t iK X * »3 ^ - i -7* IT H BOSS TYPE WITHOUT BOSS TYPE .SEE DETA IL 'C " ) T M » 1 .25 ± 0 - 0 5 D IA |
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FJOO-11 FJOO-17 | |
SC70-8
Abstract: TSOT-23 junction case 3008 so8 lt08 1388A IC OP AMP for piezoelectric microphone LT3008 3008 LT3008EDC LT3008ETS8
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LT3008 300mV. 300mV 600mV) O-220, OT-223, LT3085 500mA, 275mV 40VRMS, SC70-8 TSOT-23 junction case 3008 so8 lt08 1388A IC OP AMP for piezoelectric microphone LT3008 3008 LT3008EDC LT3008ETS8 | |
Contextual Info: ISSI’ IS 4 1 C 1 6 2 5 6 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION eISSI FEATURES • DECEMBER 1998 Th IS41C16256 is a262,14 4 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16256 offers an accelerated cycle access called EDO Page Mode. |
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IS41C16256 16-bit IS41C16256 32-bit IS41C16256-35KI IS41C 16256-35TI 400-mil | |
Contextual Info: IS 4 1 C 1 6 1 0 0 /S IS 4 1 L V 1 6 1 0 0 /S 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE ISSI PRELIMINARY OCTOBER 1998 DESCRIPTION FEATURES The ISSI IS41C16100/S and IS41LV16100/S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access |
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16-MBIT) IS41C16100/S IS41LV16100/S 16-bit 32-bit cycles/16 IS41C16100S-50K IS41C16100S-50T | |
lt941
Abstract: 1174H5 1460d5 121i3 117450 ltc 1172 LT1682CMS8 ltc947 ltbw 1121I5
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dev50I 1550L 1550LI 1555I 1579I 1579I3 1579I5 1620I 1621I 1643H lt941 1174H5 1460d5 121i3 117450 ltc 1172 LT1682CMS8 ltc947 ltbw 1121I5 | |
gct thyristor
Abstract: GCU08BA-130 HFBR-1521 HFBR-2521 power inverter thyristor 800A CS thyristor
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GCU08BA-130 gct thyristor GCU08BA-130 HFBR-1521 HFBR-2521 power inverter thyristor 800A CS thyristor | |
Contextual Info: IS41LV32256 256K x 32 8-Mbit EDO DYNAMIC RAM 3.3V, 100/83/66 MHz a d v a n c e in f o r m a t io n JULY1998 FEATURES DESCRIPTION • 262,144-word by 32-bit organization The IS41LV32256 is organized in a 262,122 x 32-bit CMOS Dynamic Random Access Memory. Four CAS signals |
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IS41LV32256 144-word 32-bit JULY1998 IS41LV32256 DR007-OE | |
Contextual Info: MITSUBISHI GATE TURN-OFF THYRISTORS FG4000GX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE FG4000GX-90DA OUTLINE DRAWING Dimensions in mm CO NNECTOR RED 3.5 DEPTH 2.2 ± 0 .2 • Itq rm Repetitive controllable on-state c u rre n t.4 0 0 0 A |
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FG4000GX-90DA | |
Contextual Info: LT3008 Series 3µA IQ, 20mA, 45V Low Dropout Linear Regulators FEATURES n n n n n n n n n n n n n DESCRIPTION Ultralow Quiescent Current: 3µA Input Voltage Range: 2.0V to 45V Output Current: 20mA Dropout Voltage: 300mV Adjustable Output VADJ = VOUT(MIN = 600mV) |
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LT3008 300mV 600mV) TSOT-23 O-220, OT-223, LT3080-1 LT3085 275mV 500mA, | |
FD1500CV-90DA
Abstract: gct thyristor
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FD1500CV-90DA 120MAX FD1500CV-90DA gct thyristor | |
symmetrical gate commutated thyristor
Abstract: press pack thyristor 6 thyristor driver circuit thyristor cs 52 gct thyristor 7,5 kw mitsubishi inverter GCU15CA-130 HFBR-1521 HFBR-2521 VR3000
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GCU15CA-130 symmetrical gate commutated thyristor press pack thyristor 6 thyristor driver circuit thyristor cs 52 gct thyristor 7,5 kw mitsubishi inverter GCU15CA-130 HFBR-1521 HFBR-2521 VR3000 | |
Contextual Info: 19-1231; Rev 1; 10/98 > k i y i x i > k i +5V, Low-Power, Multi-Channel, Serial 8-Bit ADCs Features The M AX1112/M AX1113 are low-power, 8-bit, 8-channel analog-to-dig¡tal converters ADCs that feature an internal track/hold, voltage reference, clock, and serial |
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AX1112/M AX1113 50ksps. AX1112â MAX1113â eii0055 | |
mstb2.5
Abstract: gct thyristor mstb2.5 PHOENIX GCU15CA-130 HFBR-1521 HFBR-2521 0.2uF
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GCU15CA-130 mstb2.5 gct thyristor mstb2.5 PHOENIX GCU15CA-130 HFBR-1521 HFBR-2521 0.2uF | |
LDRB SOT-23
Abstract: LTC2634-L LTC2602 LTDRZ LTC2634 LTC2634-12 LTC2634C LTC2634H LTC2634-H LTC2634I
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LTC2634 12-/10-/8-Bit 10ppm/ 16-lead 10-lead LTC2634-L LTC2634-H 10ppmge, 10pmm/ LDRB SOT-23 LTC2602 LTDRZ LTC2634 LTC2634-12 LTC2634C LTC2634H LTC2634I | |
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symmetrical gate commutated thyristorContextual Info: MITSUBISHI GCT Gate Commutated Turn-off THYRISTOR UNIT GCU15CA-130 HIGH POWER INVERTER USE PRESS PACK TYPE GCU15CA-130 ● Symmetrical GCT unit ● GCT and gate driver are connected ● ITQRM Repetitive controllable on-state current . 1500A ● IT(AV): Average on-state current . 500A |
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GCU15CA-130 000A/Â symmetrical gate commutated thyristor | |
FG3000GX-90DA
Abstract: MITSUBISHI GATE TURN-OFF THYRISTORS
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FG3000GX-90DA FG3000GX-90 25jxH FG3000GX-90DA MITSUBISHI GATE TURN-OFF THYRISTORS | |
transistor MRF 254
Abstract: LT1720 LT1720CDD LT1720CMS8 LT1720IDD LT1721 LAAV simple proportional pulse stretcher
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LT1720/LT1721 100mV LT1720) LT1116 LT1016 LT1394 LT1671 LT1715 150MHz LT1720 transistor MRF 254 LT1720CDD LT1720CMS8 LT1720IDD LT1721 LAAV simple proportional pulse stretcher | |
bd-9b
Abstract: DLCR10 DLCR0-DLCR15 NE86950BA Philips ID33 IEEE602 id46 philips NE502A tixl 109 ne86950
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NE86950 16-bit 01S-BD0 bd-9b DLCR10 DLCR0-DLCR15 NE86950BA Philips ID33 IEEE602 id46 philips NE502A tixl 109 ne86950 | |
Contextual Info: MITSUBISHI GATE TURN-OFF THYRISTORS FG4000GX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE FG4000GX-90DA OUTLINE DRAWING Dimensions in mm i CONNECTOR RED 3.5 DEPTH 2.2 ± 0 .2 • Itq r m Repetitive controllable on-statecurrent.4 0 0 0 A • |
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FG4000GX-90DA | |
Contextual Info: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FX-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD1000FX-90 ' « * lF AV Average forw ard c u rre n t. .800A • V rrm Repetitive peak reverse voltage. . 4500V |
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FD1000FX-90 | |
FD1500AU-120DA
Abstract: gct thyristor
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FD1500AU-120DA 120MAX FD1500AU-120DA gct thyristor | |
LT1460BCS3-10
Abstract: marking code LTGG LTGF marking code sot 23 MARK LTGG LTKD MARKING CODE ltbw LM 3937 LT1460BCS3-2 LT1521CS8-3 LTHS
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20-Lead 20-Lead 28-Lead LT1613CS5 LT1615CS5 LT1615CS5-1 LT1617CS5 LT1617CS5-1 LT1761ES5-1 LT1761ES5-2 LT1460BCS3-10 marking code LTGG LTGF marking code sot 23 MARK LTGG LTKD MARKING CODE ltbw LM 3937 LT1460BCS3-2 LT1521CS8-3 LTHS | |
FT500BH
Abstract: transistor D313 FG1000AH transistor PNP A124 FD500DH FG600AH CR300FX GTO gate drive unit mitsubishi transistor pnp a111 SR252AM-40S
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SR60L-10S, SR60L-10R SR100L-10S, SR100L-10R SR130L-10S, SR130L-10R SR150L-10S, SR150L-10R SR170L-10S, SR170L-10R FT500BH transistor D313 FG1000AH transistor PNP A124 FD500DH FG600AH CR300FX GTO gate drive unit mitsubishi transistor pnp a111 SR252AM-40S | |
FGC800B-130DS
Abstract: symmetrical gate commutated thyristor thyristor 800A thyristor cdi thyristor 1200A press pack thyristor CS thyristor gct thyristor thyristor 1000A TSH-383-A
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FGC800B-130DS FGC800B- 130DS KKmKtU11^ 125deg TSH-383-A FGC800B-130DS symmetrical gate commutated thyristor thyristor 800A thyristor cdi thyristor 1200A press pack thyristor CS thyristor gct thyristor thyristor 1000A TSH-383-A |