LTE 6.5 MB Search Results

LTE filter

Abstract: LTE 6.5 mb lte rf filter 5,5MB if lte 65MB
Contextual Info: EURO QUARTZ LTE CERAMIC FILTER •High selectivity type ceramic filters •Pass bandwidths from 30kHz to 4MHz •Easily mounted to PCB •Miniature size TV SIF Stage SPECIFICATION LTE 4.5MB Frequency v. Attenuation Characteristics 7.5±2 3.0±1 9.0±2 0.3±0.1

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

aba3116

Abstract: AIT1032 AWL9565 AWB7221 alt6701 AWL9555 ARA2250 ALT6712 AWT6388 ACD2206
Contextual Info: we’re right beside you Helping design engineers achieve their goals faster and easier. The ANADIGICS Advantage As the telecommunications industry powers into fourth-generation technologies, consumers expect even more from their wireless and cable products. They expect instantaneous

p20 10k wm 110

Abstract: draloric Potentiometer potentiometer vishay draloric p-40 P10 Draloric
Contextual Info: bOE 0 • ^ O O l ^ b □□□0D3T 3 m Zementierter Drahtdrehwiderstand Potentiometre bobine cimente Cemented wirewound potentiometer 180 W be! ^ at Fertlgungsberelch Plage des valeurs Resistance range Belastbarkeit 40°C P 150 VISHAY/DRALORIC DIN 41 476

6 pin TRANSISTOR SMD CODE CAA

Abstract: TEA6721 BF991 spice model
Contextual Info: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、

BB 509 varicap diode

Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Contextual Info: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

BA 7891 NG

Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Contextual Info: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进

Aruba AP-155

Contextual Info: data sheet Aruba 110 SERIES ACCESS POINTS Optimize client performance in high-density Wi-Fi environments Multifunctional and affordable 110 series wireless access points APs maximize mobile device performance in high-density Wi-Fi environments while minimizing interference from

ap 4604

Abstract: lcd 5421 RD15N rd13n STM-16 STM-64 STS-192 STS-48 TSOT0410G TSOT0410G1
Contextual Info: Advance Data Sheet June 2001 TSOT0410G SONET/SDH STS-192 Overhead and Path Processor Features General • Section, line, and path overhead layer termination for a SONET STS-192 SDH STM-64 or four STS-48 (STM-16) signals. ■ Supports any valid mix of STS-1 and concatenated

NDF 4003

Abstract: 5N 3011 0x830B
Contextual Info: Data Sheet May 2004 TSOT0410G4 SONET/SDH STS-192 Overhead and Path Processor Features ! Extracts and outputs, on a serial link, all transport overhead bytes in the receive data and inserts any, or all, transport overhead bytes in the transmit data using a corresponding serial input.

NDF 4003

Abstract: k312 451 lcd 5421 rd2n ap 4604 rd13n STM-16 STM-64 STS-192 STS-48
Contextual Info: Data Sheet May 2003 TSOT0410G4 SONET/SDH STS-192 Overhead and Path Processor Features • General ■ ■ ■ ■ ■ Section overhead RSOH and line overhead (MSOH) termination, and path overhead monitoring for one SONET STS-192 (SDH STM-64) or four STS-48 (STM-16) signals.

Contextual Info: Data Sheet July 2001 TSOT0410G2 SONET/SDH STS-192 Overhead and Path Processor Features General • Section, line, and path overhead layer termination for a SONET STS-192 SDH STM-64 or four STS-48 (STM-16) signals. ■ Supports any valid mix of STS-1 and concatenated

MPF102 spice model

Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Contextual Info: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for

Contextual Info: N ANER PHILIPS/DISCRETE LTE D bbS3S31 DD30Mfl0 70b « A P X Product Specification Philips Semiconductors BUK437-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

NSN LTE

Contextual Info: Attenuators/Sw itches Coaxial FREQUENCY MHz IN MODEL NO. Mid-Band Total m . Range Typ. Max. Typ. Max. M no damage 65 65 50 50 DC-0.05 DC-0.05 3.5 1.4 4 2 3.5 1.6 4.7 2.5 15 1-200 DC-0.05 DC-0.05 3.5 1.4 4 2 3.5 4.7 1.6 2.5 20 15 30 30 65 65 50 50 100-2000

BGU7073

Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4523DW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and

Transistor AC 188

Abstract: BUK437-600B
Contextual Info: N AMER PHI LIP S/DISCRETE b=îE D bbS3T31 □□3D4TD b55 WËAPX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION PARAMETER Drain-source voltage Drain current DC Total power dissipation Drain-source on-state résistance

BUK437-600B

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3T31 □□3D4TD b55 H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION PINNING - SOT93 SYMBOL PARAMETER Drain-source voltage Drain current DC Total power dissipation Drain-source on-state

S5 100 B112 MT RELAY

Abstract: konica IR sensor DVB-T Schematic set top box MIL-STD-291C Digital Panel Meter PM 428 S5 100 B112 RELAY DVB-C receiver schematic diagram service manual tv seg pacific
Contextual Info: Test & Measurement Catalog 2015 Chapter Contents Page Company profile ❙❙ Our business fields and products 2 1 Aerospace and defense test solutions ❙❙ Radar test systems ❙❙ ILS test system 6 2 Wireless ­communications testers and systems ❙❙ Wireless device testers

Contextual Info: P h ilip ^ e m ic o n d u c to r^ ^ ^ • b b 5 3 T 31 Q0 3 1 b b 5 1ST H i APX Product specification NPN 6.5 GHz wideband transistor ^ — DESCRIPTION BFQ135 N AMER PHILIPS/DISCRETE bTE D PINNING NPN transistor in a 4-lead dual-emitter SOT172A1 envelope with a ceramic cap. All leads are

upc 1185 h

Abstract: mobis Delay linear sweep generator using 555 timer Anritsu ML524B operation manual for vip tracking gsm and gps technology 26UA42 MU909014A1 nokia 2700 classic circuit diagram MF2400C MA8120E
Contextual Info: Outline of Anritsu Corporation p.2 Quality, Reliability Assurance System, and Effort for Environmental Considerations p.3 How to Use This Catalog p.4 Sales, Shipping, and Service Information p.5 Sales Network p.6 Index p.7 Model Number Index p.9 New Products Descriptions

Y423

Abstract: 81256
Contextual Info: FU J I T S ^ M I C R O E lT c T r ' o N I C S 7 fi D Ë J 37 M T 7 t.S 0005031 3 M O S M e m o rie s • M B 8 1 2 5 6 - 1 2 - W , y^.^3 .^- F U J IT S U M B 8 1 2 5 6 - 1 5 - W NMOS 262,144-Bit Dynamic Random Access Memory D e s c rip tio n The Fujitsu MB81256-W is a fully decoded, dynamic NMOS ran­