LTS 360 01 Search Results

LTS360P

Abstract: LTS-360 clts LTS-360R
Contextual Info: I IT C VIJI 0.36" Single Digit Numeric LED Displays LI I CL“ J WI LTS-360 Series •0.36 inch 9.14mm digit height •Continuous uniform segments. •Choices of five bright colors-red/bright red/green/orange/high efficiency red. •Low power requirement.

lts 542

Abstract: LTS 543 LTS 543 common cathode lts 542 pin diagram LT 543 common cathode pin diagram of LTS 542 lts 543 pin diagram lts 543 series pin diagram 7 segment display LTS 542 7 SEGMENT LT 543
Contextual Info: TAIWAN LITON ELECTRONIC S4E D ÔÛ35547 OODOblñ 1 "T~4/-33 LTS-360 SERIES 0.36" SINGLE DIGIT NUMERIC DISPLAYS SPECIALIST FEATURES • 0.36 INCH 9.20mm D IG IT HEIGHT. • CONTINUOUS UNIFORM SEGMENTS. • CHOICE OF FIVE BRIGHT COLORS-RED/BRIGHT RED/GREEN/ORANGE/HIGH EFFICIENCY RED.

GE SCR Manual

Abstract: SCR Manual, General electric General electric SCR manual SCR nomenclature, General electric scr stack ge scr package back to back scr firing board scr firing ic for three phase bridge bridge of scr firing circuit rectifier three phase scr
Contextual Info: SCR LOW AND MEDIUM CURRENT STACKS Cl 012-13 C1112-13 C3512-13 N ow , for the first time, from th e o rig in a to r of the Silico n C o n tro lle d Rectifier, p a c k a g e d S C R b u ild in g blocks, com plete w ith S C R 's , com patible rectifiers, heat sinks, interconnections, a n d all re q uire d h a rd w a re in o n e p acka ge . R e q u ire s o n ly

Contextual Info: 27 K a trin a Road Chelm sford, M A 01824 Tel: 978 256-3321 Fax: (978)250-1046 W eb: www.stcsemi.com A PO W ERHOUSE hFE B vceo TO-3 Â à 41 i VcE(SAT) M ax @ I c/I b (volts) M in-M ax (a m p s/vo lts) (vo lts) (a m p s) 2N6058 80 12 750- 18000 6/3 2.0 6 / .024

2N5449

Abstract: MPS-K72 2N3694 2N3693 2N5143 2N5447 k72 npn k72 transistor Three-Five 2N5127
Contextual Info: Econoline P la stic -M o ld e d Silicon S E P T ” Transistors i GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS TO-92 Package E BC Pinning D -C C U R R E N T G A IN >- Type No. cc < o CL Pd (h F E ) Lim its T a = V(BR| V(BR) V(BR) ICBO Conditions nA 25 C C BO CEO EBO

GE 4N35

Abstract: ES1868 4N32-4N32A-4N33 GE 4N33 4N29 4N29A 4N30 4N31 4N32 4N32A
Contextual Info: G E SOLID STATE 01 D E | 3 f l 7 5 Q f l l □Ont.74 1 Optoelectronic Specifications 2$ Photon Coupled Isolator 4N29-4N29A-4N30-4N31 4N32-4N32A-4N33 — SYtTini Ga As Infrared E m itting Diode & NPN Silicon Photo-D arlington Am plifier T h e G E S o lid S ta te 4N 29 th ru 4N 33 devices co n sist o f a g allium arsen id e

Contextual Info: .1134300 KENNEDY M S CORP KENNEDY -CM S> CORP 7fi 7 8 A' 0 0 0 1 3 DE~| 5134300 0000013 J “71— 11-01 WIDE BANDWIDTH, HIGH SLEW RATE HYBRID BUFFER AMPLIFIERS Models 350, 360 SLEW RATE: 2000V/jiSec Min. TIME D E L A Y : 1 nSec., 2.5 nSec. max. F U L L FR EQ U EN CY OUTPUT: 20 MHz at ±10 V

GE SCR Manual

Abstract: GE SCR 1000 AMP SCR 214 scr stack General electric SCR scr 106 GE SCR 1000 SCR Phase Control IC SCR nomenclature, General electric SCR 60A 500V
Contextual Info: SCR Medium & High Current Modules NOMENCLATURE CIO 12BA1AD1 is a 200V, fu ll wave back to back bridge connected CIO c e lls on type 12 F ins, capable o f c o n t r o llin g 4.7 amp average per SCR in free a ir o r 6.2 amp average per ce ll with 1000 lin e a r feet per minute forced a ir.

GR 1815

Abstract: 2SA950Y 1815gr 2SC1815Y 2SC2229Y 2SC2229-Y 2SA10150 1959Y 2SA562Y BF594
Contextual Info: BHARAT ELEK/ SEPII COND DI M7E B • m 3 S 3 ciö O O OO Dl l T54 ■ BEL I jz*2 7 - ò ] VCE Si VCEO D e v ic e No VCBO V ebo V o lts V o lts V o lts min mm mm hFE le at bias min /m ax mA VCE 1 CM V o lts mA m ax P lo t mW max IC B O typ Sat V o lts ÍT

SL 100 NPN Transistor

Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
Contextual Info: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE

6l6gb

Abstract: tube 6L6 6L6 tube 6l6gb tube harrison 248 6l6, tube
Contextual Info: BEAM POWER TUBE GE NE RAL DATA E le c tri c a l: H e a t e r , fo r Un i p o t e n t i al C a th o d e : V o l t a g e . 6.3 ac o r d c v o l t s C u r r e n t . 0.9 ajnp D ir e c t In te r e le c t ro d e C a pa cita nce s A p p r o x . :0

Contextual Info: MOTOROLA • i SEM ICO NDUCTO R TECHNICAL DATA M R D 360 M R D 370 Photo Detectors Darlington Output . . . d esig n ed fo r a p p lica tio n sorte rs, s w itc h in g and lo g ic at lo w lig h t levels. • • • • • in in d u stria l in sp e ctio n , proce ssin g and c o n tro l, counters,

IN6284a

Abstract: in6285A IN6283A IN6282A IN6277 IN6267A IN6292A IN5908 IN6275A IN6286A
Contextual Info: POWERZORB L8 Series 1.5 KW Transient Absorption Zener Diodes A range of unipolar protection diodes in a moulded D027A package. P s u rg e -1.5KW; — ;— — !- '•-/1 . . ~*i<

Contextual Info: IXGB16N60U3 V Three Independent IGBT with Diode in Power SIP CES C25 VCE sat = 600 V = 16 A = 2.5 V Advanced data 1 2 3 4 5 6 7 8 9 10 11 12 Maximum Ratings Symbol Test Conditions V CES T j = 25°C to 150°C 600 V VCGR T j = 25°C to 150°C; RGE = 1 M fi

Contextual Info: VARACTOR TUNING DIODES C a p acitan ce Figure o f M erit at v„=4 o v Q at 4 0 V and and SO MHz f»1 0 M Hz i :4 E 9 lC . . P ro d u c t H ighlights P a rt N u m b er l l l l l l l l l l l i 1111 § 1 1 W C733 W C736 VVC741 iiS lis C a p a c ita n c e R atio

BEL 100N TRANSISTOR

Abstract: BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115
Contextual Info: BHARAT EL EK /S E n i C O N D S Device No VC EO Volts min VcBO Volts mm DI 47E D V ebo VoHs min hFE at bias mm /max Ic mA 14353Tfl V ce V o lts 1 CM mA max P lo t mW max □□□□012 ICBO uA typ flTG • V ce Sat V o lts typ ÍT MHz typ BELI Cob pF typ

Contextual Info: 1N225 INTERNATIONAL thru S e m ic o n d u c to r , I n c . 1N229A Double Ended Zener SINGLE ENDED CAN I •0 65 /.075 1.52/1.91 t ELECTRICAL CHARACTERISTICS at 25°C N B re a k d o w n V o lta g e R e v e rs e C u rre n t at V R 25° C JE D EC P a rt V , M in

Contextual Info: □IXYS IXGB16N60R2 Dual Independent IGBTs and Diodes in Power SIP VCES C25 VCE sat i J Advanced data = 600 V = 16 A = 2.5 V 'I I I1 ' •! i : I; ■ ' 1 2 3 4 5 6 7 8 9 10 11 12 Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR

T6420M

Abstract: t6420
Contextual Info: MOTORO LA SC {D IO DES /OPTO} ! 6367255 MOTOROLA SC 01 D IO D E S /O P T O D eT| b3b72SS DD7^ ES3 S 1 ~ D IE 79253 D — /7 T6400 T6410 T6420 Series T riacs Silico n Bidirectional Triode Thyristors . . designed primarily for industrial and military applications for the control of ac

FES8JT

Abstract: SCT 280 AIE3
Contextual Info: 36E D GENL INSTR/ POWER • 36^0137 ÜGD43Ô7 ^ « 6 I C T '0 3 - n FES8AT THRU FES8JT FAST EFFICIENT GLASS PASSIVATED RECTIFIER Voltage - 50 to 600 Volts Current - 8.0 Amperes _ _ _ _ _ ♦ Plastic package has Underwriters Laboratory Fiammability Classification 94V-0

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

Calex

Contextual Info: 12 Watt Dual Series DC/DC Converters F ea tu res D escrip tio n • Low N oise O utput These 10 and 12 W att Dual Output DC/DC converters are designed fo r telecom m unications, medical or industrial equipm ent and instrumentation systems. The converters feature very wide input voltage ranges.

Contextual Info: □ IX Y S Preliminary data High Speed IGBT IXSH10N60 IXSH10N60A Short Circuit SOA Capability <> V CES *C 25 V CE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V TO-247 AD Symbol Test Conditions VCES Tj = 25° C to 150°C 600 V Vtcgr Tj = 25°C to 150°C; RGE = 1 MD

GES6220

Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007 GES6010 GES6011 GES6012 GES6013 GES6014 GES6015 GES6016 GES6017 GES6218