LWW MARKING Search Results

Contextual Info: Extract from the online catalog RV 8-TP 2,4X0,8 L-WW(1X1) Order No.: 3191042 Marshalling distributor, Nom. voltage: 250 V, Nominal current: 5 A, AWG: 20 - 26, Connection type: Special and hybrid connection,

LWW11

Contextual Info: Module no:3191042 LabelId:3191042 Operator:Phoenix 19:07:08, Donnerstag, 28. Juni 2001 RV 8-TP 2,4 0,8 L-WW (1 1) Element width 7.62 [mm] AWG Connection data WW connection TP connection I U [A] [V] 5* 250 1x1 26-20 5* 250 2.4 x 0.8 24-20 5* 250 * see load diagram

TRANSISTOR AS3

Abstract: TRANSISTOR LWW 20 transistor code AS3 On semiconductor date Code sot-223 AS3 SOT223 as3 Transistor transistor code LWW FR4 GLASS EPOXY AS3 MARKING TRANSISTOR LWW 40
Contextual Info: BSP52T1 Preferred Device NPN Small-Signal Darlington Transistor This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is

MA56

Abstract: 2SK321 2SK374 panasonic capacitor FL
Contextual Info: P A N A S O N IC I N D L /E L E K iS E M I } 7SC D | b T B 5 fl5 M D D C H b fla 2SK321 2SK321 '> ij zi > N f v N-Channel Junction /A w lt-iS it^ l^ iliffl/W id e -B a n d , Low-Noise Amplifier > ^ f fl/V id e o Camera • # • ^ ¡/F e a tu r e s A £ # l l : C is s * ' V J ' ? V ^ 0 / L o w

62514

Abstract: NIF62514
Contextual Info: NIF62514 Product Preview HDPlus N-Channel Self-protected Field Effect Transistors w/ Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area while incorporating smart

3055l

Contextual Info: NTF3055L108 Preferred Device Power MOSFET 3.0 A, 60 V, Logic Level N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 A, 60 V RDS on = 120 mW

5L175

Contextual Info: NTF3055L175 Preferred Device Power MOSFET 2.0 A, 60 V, Logic Level N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 2.0 A, 60 V RDS on = 175 mW

mosfet L 3055

Abstract: mj 3055 3055 l pd3055 3055 sot-223
Contextual Info: NTF3055-100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 A, 60 V RDS on = 110 mW

NIF5002N

Abstract: NIF5002NT1 NIF5002NT3 NIF5002 NIF5002ND lww marking
Contextual Info: NIF5002N Preferred Device Advance Information Self−protected FET with Temperature and Current Limit HDPlust devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while

gate to drain clamp

Abstract: TB 1225 EN NIF9N05CL NIF9N05CLT4
Contextual Info: NIF9N05CL Advance Information Power MOSFET 2.6 Amps, 52 Volts N-Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT-223 Package http://onsemi.com 2.6 AMPERES 52 V CLAMPED RDS on = 120 mW (Typ.) Benefits • High Energy Capability for Inductive Loads

a2955

Abstract: 2955 mosfet 2955 SOT-223
Contextual Info: NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes Applications • • • • Power Supplies PWM Motor Control Converters Power Management

Contextual Info: NIF62514 Preferred Device Self-protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while

NIF5003N

Abstract: NIF5003NT1 NIF5003NT3
Contextual Info: NIF5003N Preferred Device Advance Information Self−protected FET with Temperature and Current Limit HDPlust devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while

NIF62514

Abstract: NIF62514T1 NIF62514T3
Contextual Info: NIF62514 Preferred Device Self−protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while

NIF62514

Abstract: NIF62514T1 NIF62514T3
Contextual Info: NIF62514 Preferred Device Self-protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area while

Contextual Info: NIF9N05CL Protected Power MOSFET 2.6 Amps, 52 Volts N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped

5L175

Abstract: NTF3055L175 NTF3055L175T1 NTF3055L175T3 NTF3055L175T3LF
Contextual Info: NTF3055L175 Preferred Device Power MOSFET 2.0 Amps, 60 Volts, Logic Level N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 2.0 AMPERES

3055 sot-223

Abstract: 3055 l NTF3055-100
Contextual Info: NTF3055-100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 AMPERES 60 VOLTS

160T1

Abstract: 160T3 NTF3055-160
Contextual Info: NTF3055-160 Preferred Device Power MOSFET 2.0 Amps, 60 Volts N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 2.0 AMPERES 60 VOLTS

3055 sot-223

Abstract: mosfet p 3055 MJ 3055 mosfet L 3055 3055 l
Contextual Info: NTF3055−100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 A, 60 V RDS on = 110 mW

62514

Contextual Info: NIF62514 Preferred Device HDPlus N-Channel Self-protected Field Effect Transistors w/ Temperature and Current Limit http://onsemi.com HDPlus devices are an advanced series of power MOSFETs which utilize ON’s latest MOSFET technology process to achieve the lowest

5L175

Abstract: NTF3055L175 NTF3055L175T1 NTF3055L175T3 NTF3055L175T3LF
Contextual Info: NTF3055L175 Preferred Device Power MOSFET 2.0 Amps, 60 Volts, Logic Level N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 2.0 AMPERES

3055l

Abstract: f 3055l NTF3055L108 NTF3055L108T1 NTF3055L108T3 NTF3055L108T3LF
Contextual Info: NTF3055L108 Preferred Device Power MOSFET 3.0 Amps, 60 Volts, Logic Level N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 AMPERES

3055 l

Abstract: 3055 sot-223 3055L
Contextual Info: NTF3055-100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 AMPERES 60 VOLTS