M 150 DIODE Search Results

1n2222 general diode

Abstract: 1N2222 1n22 1N2218 1N2219 0880 1N2024 1N2025 1N2027 1N2029
Contextual Info: 3869720 GENERAL D IO D E CO RP GENERAL DIODE CORP 86D ~ flb 00326 DE | D T - o / ' f f OODDBSb 7 | ~ ST U D M O U N T ED SILICON POW ER RECTIFIERS . . . cont'd 1 % 10 @ 150 10 @ 150 1 @ 150 1 @ 150 1 @ 150 5 @150 5 @150 0.5 @ 150 0.5 @ 150 0.5 @ 150 1 @ 150

diode equivalent

Abstract: JANTX1N3293
Contextual Info: IO R Government/ Space Products Diode, JAN Equivalent Diode, JAN Equivalent Diode 150 Amps P u t H um bert IR 80-1243 80-1243R Industrial Currant Rating A M ilitary Current Rating (A) Com pliant to M IL-8-19S00 Q ualification 150 150 /246 19000-410-84 150

Contextual Info: ¡Ill sgRi I n t e r n a t io n a l R e c t if ie r Schottky Diodes Pvt Number m 2 v f m o if m eas n-»-raons Fax-onDemand Number 100 150 150 175 (5)(10) (5)(8) (5)(8) (5)(8) 20396 20397 20438 20437 S M B (J2) 50 20 20 5 100 150 150 175 (5)(9) (5)(11) (5)(11)

SCHOTTKY bys 92-50

Abstract: RECTIFIER bys 92-50 BYV 35 BYS 98-50
Contextual Info: Epitaxial rectifier diodes Type V r rm Ifa v m t A = 25 °C V A vF Ifs m 10 ms, t,r Ir = Outline max ¡F - 1FAV W tV| = 25 °C VR tv , - a . A V mA ns °c < 0 .3 5 <50 150 111 112 V rh M • BYV 29-500 500 g 100 < 1 .4 ■ BYV 32-150 150 2x10 150 < 1.15 < 0 .6

Contextual Info: Advance Technical Information Standard Power MOSFET IXTH 60N15 VDSS = 150 V ID cont = 60 A Ω RDS(on) = 33 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 150

90N15

Contextual Info: Advance Technical Information IXTK 90N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 90 A Ω = 16 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150

NJL5126D

Abstract: NJL5125D NJL1110B NJL1112B NJL1120B NJL1120F NJL1121F NJL1122B NJL112IB NJL6103B
Contextual Info: OPTOELECTRONIC DEVICES & MODULES LIGHT EMITTING DIODE TYPE •:MA33MÊt«te«* w m m m m m IF PD VR Xp [mW] H [nm] 150 100 6 940 DESCRIPTION NJL1104B NJL1110B NJL1112B NJL1120B NJL112IB NJL1122B NJL1120F NJL1121F GaAs Infrared LED 150 225 170 170 170 170

Contextual Info: Advance Technical Information IXTK 128N15 High Current Mega MOSTMFET VDSS ID25 = 150 V = 128 A Ω = 15 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150

180N15

Contextual Info: Advance Technical Information IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 9 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150

Contextual Info: Advance Technical Information IXTK 128N15 High Current Mega MOSTMFET VDSS ID25 = 150 V = 128 A Ω = 15 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150

60N15

Contextual Info: Advance Technical Information Standard Power MOSFET VDSS = 150 V ID cont = 60 A Ω RDS(on) = 33 mΩ IXTH 60N15 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 150

75n15

Contextual Info: Advance Technical Information IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS

Contextual Info: IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 10 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150 V VGS Continuous

180N15

Abstract: 123B16
Contextual Info: IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 9 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150 V VGS

IXTH48N15

Abstract: 48n15
Contextual Info: Advance Technical Information IXTH 48N15 IXTT 48N15 High Current Power MOSFET VDSS ID25 = 150 V = 48 A Ω = 32 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS

MS6511

Abstract: MS5151 Microwave detector diodes 18 GHz Microwave detector diodes MS5121 MS5531 MS5221 MS5211 MS5321 MS6111
Contextual Info: 65 SCHOTTKY DIODES PART NUMBER 4 z |F fi NF (db) TEST F R EQ UENC Y VSWR MICROWAVE M IXER DIODES MS5111 MS5121 MS5131 8.0 7.5 7.0 150 300 150-300 150-300 2.3:1 2.3:1 2.0:1 MS5141 MS5151 MS5211 6.5 6.0 8.0 150-300 150-300 150 300 1.8:1 1.5:1 2.3:1 MS5221

IXTH75N15

Abstract: 75N15
Contextual Info: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20

75N15

Abstract: .75N15
Contextual Info: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous

Contextual Info: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20

96N15P

Abstract: IXTQ96N15P
Contextual Info: IXTQ 96N15P IXTT 96N15P PolarHTTM Power MOSFET VDSS ID25 = 150 V = 96 A ≤ 24 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 150 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 150

ESJA

Abstract: ESJC
Contextual Info: Epitaxial Rectifier Diodes rrm V Ifa vm V Ifs m BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design Ir trr ns V mA = I fAVM tVJ= 25°C Vr = VHRM 150 150 80 < 1,15 < 1,15 <1,3 <0,6 <0,6 <0,6 V rrm If s m IpAVM kV A t=8,3ms tvj = 25°C mA tA = 25°C

96n15

Contextual Info: IXTQ 96N15P IXTT 96N15P PolarHTTM Power MOSFET VDSS ID25 = 150 V = 96 A Ω ≤ 24 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 150 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 150

diode SM 88A

Abstract: transistor N 343 AD
Contextual Info: IXTH 88N15 IXTT 88N15 High Current Power MOSFET V DSS I D25 = = = RDS on 150 V 88 A Ω 22 mΩ N-Channel Enhancement Mode Symbol Test Conditions V DSS V DGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient

352AI

Contextual Info: Advance Technical Information IXTH 88N15 IXTT 88N15 High Current Power MOSFET V DSS I D25 = = = RDS on 150 V 88 A Ω 22 mΩ N-Channel Enhancement Mode Symbol Test Conditions V DSS V DGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V